-
81.发明授权公开(公告)号：US06784509B2
公开(公告)日：2004-08-31
申请号：US10217410
申请日：2002-08-14
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
IPC分类号： H01L2982
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
摘要翻译： 在自旋阀型元件中，将表现出大的自旋相关界面散射的材料的界面插入层（32,34）插入到更靠近磁性固定层（16）或磁性层（20）的位置 非磁性中间层（18）。 可以另外插入非磁性背层（36）作为不与非磁性中间层接触的界面，以通过利用沿被钉扎层和非磁性背层之间的界面处的自旋相关界面散射来增加输出， 自由层和非磁背层。
-
公开(公告)号：US08976490B2
公开(公告)日：2015-03-10
申请号：US13565418
申请日：2012-08-02
申请人： Kenichiro Yamada , Katsuhiko Koui
发明人： Kenichiro Yamada , Katsuhiko Koui
CPC分类号： G11B5/35 , G11B5/1278 , G11B5/315 , G11B2005/0005 , G11B2005/0024
摘要： According to one embodiment, a magnetic recording head includes a main pole configured to apply a recording magnetic field to a recording layer of a recording medium, a trailing shield opposed to the main pole with a write gap therebetween, and a high-frequency oscillator between the main pole and the trailing shield in a range of a width of the main pole in a track width direction, and configured to generate a high-frequency magnetic field. The high-frequency oscillator includes a spin injection layer, an intermediate layer, and an oscillation layer, and at least the oscillation layer comprises divided oscillation regions.
摘要翻译： 根据一个实施例，磁记录头包括：主极，被配置为向记录介质的记录层施加记录磁场;与主极相对的后屏蔽，其间具有写入间隙;以及高频振荡器， 所述主极和所述后屏蔽体在所述主极的宽度方向上在轨道宽度方向上的宽度范围内，并且被配置为产生高频磁场。 高频振荡器包括自旋注入层，中间层和振荡层，至少振荡层包括分频振荡区域。
-
83.发明授权公开(公告)号：US08929031B2
公开(公告)日：2015-01-06
申请号：US13291777
申请日：2011-11-08
CPC分类号： G11B5/3163 , B82Y40/00 , G11B5/1278 , G11B5/314 , G11B2005/0024 , H01F10/325 , H01F10/3286 , H01F10/329 , H01F41/302 , H01F41/308 , H01L43/08 , Y10T29/4902 , Y10T29/49032 , Y10T428/1186
摘要： According to one embodiment, there is provided a spin torque oscillator including an oscillation layer formed of a magnetic material, a spin injection layer formed of a magnetic material and configured to inject a spin into the oscillation layer, and a current confinement layer including an insulating portion formed of an oxide or a nitride and a conductive portion formed of a nonmagnetic metal and penetrating the insulating portion in a direction of stacking. The conductive portion of the current confinement layer is positioned near a central portion of a plane of a device region including the oscillation layer and the spin injection layer.
摘要翻译： 根据一个实施例，提供了一种自旋扭矩振荡器，其包括由磁性材料形成的振荡层，由磁性材料形成的自旋注入层，并被配置为向振荡层注入自旋;以及电流限制层，其包括绝缘体 由氧化物或氮化物形成的部分和由非磁性金属形成的导电部分，并且在堆叠方向上穿透绝缘部分。 电流限制层的导电部分位于包括振荡层和自旋注入层的器件区域平面的中心部分附近。
-
公开(公告)号：US08153188B2
公开(公告)日：2012-04-10
申请号：US12248578
申请日：2008-10-09
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
-
公开(公告)号：US07514117B2
公开(公告)日：2009-04-07
申请号：US11199448
申请日：2005-08-09
IPC分类号： B05D5/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
-
公开(公告)号：US20090061105A1
公开(公告)日：2009-03-05
申请号：US12248578
申请日：2008-10-09
IPC分类号： B05D5/12
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , G11C11/161 , H01L27/224 , H01L27/228 , H01L43/08 , Y10T428/115
摘要： The present invention relates to a method for manufacturing a magnetoresistive element having a magnetization pinned layer, a magnetization free layer, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating into the insulating layer. A process of forming the spacer layer in the method includes depositing a first metal layer forming the metal paths, depositing a second metal layer on the first metal layer, performing a pretreatment of irradiating the second metal layer with an ion beam or a RF plasma of a rare gas, and converting the second metal layer into the insulating layer by means of supplying an oxidation gas or a nitriding gas.
摘要翻译： 本发明涉及一种用于制造具有磁化钉扎层，磁化自由层和间隔层的磁阻元件的方法，所述隔离层包括设置在磁化被钉扎层和磁化自由层之间的绝缘层，以及穿透绝缘层的电流路径 。 在该方法中形成间隔层的工艺包括沉积形成金属路径的第一金属层，在第一金属层上沉积第二金属层，执行用离子束或RF等离子体照射第二金属层的预处理 稀有气体，并且通过供给氧化气体或氮化气体将第二金属层转化为绝缘层。
-
87.发明申请公开(公告)号：US20080068765A1
公开(公告)日：2008-03-20
申请号：US11980678
申请日：2007-10-31
CPC分类号： H01L43/08 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3903 , G11B5/3906 , G11B5/3909 , G11B5/3929 , G11B2005/3996 , H01F10/1936 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3281 , H01F41/305
摘要： A spin valve type magnetoresistive effect element for vertical electric conduction includes a magnetoresistive effect film in which a resistance adjustment layer made of a material containing conductive carriers not more than 1022/cm3 is inserted. Thus the resistance value of a portion in change of spin-relied conduction is raised to an adequate value, thereby to increase the resistance variable amount.
摘要翻译： 用于垂直导电的自旋阀型磁阻效应元件包括磁阻效应膜，其中由含有导电载体的材料制成的电阻调节层不大于10/22/3 / >被插入。 因此，将自旋依赖导通变化的部分的电阻值提高到适当的值，从而增加电阻变化量。
-
88.发明授权Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 有权磁阻效应元件，磁头，磁头组件，磁存储系统公开(公告)号：US07248448B2
公开(公告)日：2007-07-24
申请号：US10937652
申请日：2004-09-10
申请人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
发明人： Hideaki Fukuzawa , Yuzo Kamiguchi , Katsuhiko Koui , Shin-ichi Nakamura , Hitoshi Iwasaki , Kazuhiro Saito , Hiromi Fuke , Masatoshi Yoshikawa , Susumu Hashimoto , Masashi Sahashi
IPC分类号： G11B5/39
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3932 , G11B5/66 , G11B2005/3996 , H01F10/3272 , H01F10/3295 , H01F41/325 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/1143 , Y10T428/115 , Y10T428/1171 , Y10T428/1193 , Y10T428/12326 , Y10T428/12465 , Y10T428/12986 , Y10T428/265
摘要： Disclosed are a high-sensitivity and high-reliability magnetoresistance effect device (MR device) in which bias point designing is easy, and also a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device. In the MR device incorporating a spin valve film, the magnetization direction of the free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. In this, the pinned magnetic layer comprises a pair of ferromagnetic films as antiferromagnetically coupled to each other via a coupling film existing therebetween. The device is provided with a means of keeping the magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer, and with a nonmagnetic high-conductivity layer as disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
摘要翻译： 公开了一种容易进行偏置设计的高灵敏度和高可靠性磁阻效应器件（MR器件），以及包含MR器件的磁头，磁头组件和磁记录/再现系统。 在包含自旋阀膜的MR装置中，当施加的磁场为零时，自由层的磁化方向与其中第二铁磁性层的磁化方向成一定角度。 在此，被钉扎的磁性层包括通过其间存在的耦合膜彼此反铁磁耦合的一对铁磁膜。 该装置设置有保持构成被钉扎磁性层的一对铁磁膜中的任一个的磁化方向以及与侧面相反侧的第一铁磁性层附近设置的非磁性高导电性层 第一铁磁层与非磁性间隔层接触。 利用该结构，该器件具有极高的灵敏度，并且器件中的偏置点被良好地控制。
-
89.发明授权公开(公告)号：US07218484B2
公开(公告)日：2007-05-15
申请号：US10659299
申请日：2003-09-11
IPC分类号： G11B5/39
CPC分类号： H01L43/08 , G11B5/3906 , H01L43/12 , Y10T428/1121
摘要： A magnetoresistance effect element comprises: a magnetoresistance effect film, a pair of electrodes, and a phase separation layer. The magnetoresistance effect film includes a first ferromagnetic layer whose direction of magnetization is pinned substantially in one direction, a second ferromagnetic layer whose direction of magnetization changes in response to an external magnetic field, and an intermediate layer provided between the first and second ferromagnetic layers. The pair of electrodes are electrically coupled to the magnetoresistance effect film and configured to supply a sense current perpendicularly to a film plane of the magnetoresistance effect film. The phase separation layer is provided between the pair of electrodes. The phase separation layer has a first phase and a second phase formed by a phase separation in a solid phase from an alloy including a plurality of elements. One of the first and second phases includes at least one element selected from the group consisting of oxygen, nitrogen, fluorine and carbon in higher concentration than other of the first and second phases.
摘要翻译： 磁阻效应元件包括：磁阻效应膜，一对电极和相分离层。 磁阻效应膜包括其磁化方向基本上被固定在一个方向上的第一铁磁层，其磁化方向响应于外部磁场而变化的第二铁磁性层和设置在第一和第二铁磁层之间的中间层。 一对电极电耦合到磁阻效应膜并且被配置为提供垂直于磁阻效应膜的膜平面的感测电流。 相分离层设置在该对电极之间。 相分离层具有通过从包含多个元素的合金固相中相分离而形成的第一相和第二相。 第一和第二相中的一个包括选自氧，氮，氟和碳中的至少一种元素，其浓度高于第一相和第二相中的其它相。
-
公开(公告)号：US07071522B2
公开(公告)日：2006-07-04
申请号：US10887080
申请日：2004-07-09
申请人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
发明人： Hiromi Yuasa , Yuzo Kamiguchi , Masatoshi Yoshikawa , Katsuhiko Koui , Hitoshi Iwasaki , Tomohiko Nagata , Takeo Sakakubo , Masashi Sahashi
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/00 , G11B5/3903 , G11B2005/3996 , H01F10/30 , H01F10/3227 , H01F10/3272 , H01F10/3295 , H01L43/08 , H01L43/10
摘要： In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.
-
-
-
-
-
-
-
-
-
搜索结果
96 条记录 (耗时 0.054 秒)
