公开(公告)号：US20100136260A1

公开(公告)日：2010-06-03

申请号：US12564484

申请日：2009-09-22

申请人： Masanobu Matsunaga ,  Nobutake Nodera ,  Kazuhide Hasebe

发明人： Masanobu Matsunaga ,  Nobutake Nodera ,  Kazuhide Hasebe

IPC分类号： C23C16/513 ,  C23C16/455 ,  B05C11/00 ,  C23C16/52

CPC分类号： C23C16/345 ,  C23C16/455 ,  C23C16/45542 ,  C23C16/45546 ,  H01L21/3141 ,  H01L21/3185

摘要： A film formation method, in a vertical batch CVD apparatus, is preset to repeat a cycle a plurality of times to laminate thin films formed by respective times. The cycle alternately includes an adsorption step of adsorbing a source gas onto a surface of the target substrates and a reaction step of causing a reactive gas to react with the adsorbed source gas. The adsorption step is arranged to make a plurality of times a supply sub-step of performing supply of the source gas to the process field with an intermediate sub-step of stopping supply of the source gas to the process field interposed therebetween, while maintaining a shut-off state of supply of the reactive gas. The reaction step is arranged to continuously perform supply of the reactive gas to the process field, while maintaining a shut-off state of supply of the source gas.

摘要翻译： 在垂直分批CVD装置中，成膜方法被预先设定为重复多次循环以层压各时间形成的薄膜。 循环交替地包括将源气体吸附到目标基板的表面上的吸附步骤和使反应性气体与吸附的源气体反应的反应步骤。 吸附工序被配置为进行多次供给副工序，该供给副工序用于停止将源气体供给到工艺场的中间子步骤，同时保持原料气体 关闭反应气体供应状态。 反应步骤被设置成在保持源气体的供应关闭状态的同时连续地向工艺场供应反应气体。

公开(公告)号：US07651730B2

公开(公告)日：2010-01-26

申请号：US11180620

申请日：2005-07-14

申请人： Kazuhide Hasebe

发明人： Kazuhide Hasebe

IPC分类号： C23C16/00 ,  C23C14/10 ,  C23C16/40

CPC分类号： C23C16/402 ,  C03C17/245 ,  C03C2217/213 ,  C03C2218/152 ,  C23C16/45546 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31608

摘要： A silicon oxide film is formed on a target substrate by CVD, in a process field configured to be selectively supplied with an Si-containing gas, an oxidizing gas, and a deoxidizing gas. This method alternately includes first to fourth steps. The first step is arranged to perform supply of the Si-containing gas to the process field while stopping supply of the oxidizing and deoxidizing gases to the process field. The second step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field. The third step is arranged to perform supply of the oxidizing and deoxidizing gases to the process field at the same time, while stopping supply of the Si-containing gas to the process field. The fourth step is arranged to stop supply of the Si-containing, oxidizing, and deoxidizing gases to the process field.

摘要翻译： 在配置为选择性地供给含有Si的气体，氧化气体和脱氧气体的工艺区域中，通过CVD在目标衬底上形成氧化硅膜。 该方法交替地包括第一至第四步骤。 第一步设置为在工艺过程中提供含Si气体，同时停止将氧化和脱氧气体供应给工艺现场。 第二步设置为停止向工艺场供应含Si，氧化和脱氧气体。 第三步是在停止向工艺场供给含Si气体的同时，同时向工艺场提供氧化和脱氧气体。 第四步设置为停止向工艺场供应含Si，氧化和脱氧气体。

公开(公告)号：US20090275150A1

公开(公告)日：2009-11-05

申请号：US12504454

申请日：2009-07-16

申请人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

发明人： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

IPC分类号： H01L21/66

CPC分类号： C23C16/24 ,  C23C16/45523 ,  Y10T117/1024

摘要： A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

摘要翻译： 一种用于半导体工艺的成膜装置包括：源气体供应电路，用于向处理容器中提供用于在目标衬底上沉积薄膜的源气体;以及混合气体供应电路，向处理容器供应含有掺杂物质的混合气体 用于用杂质掺杂薄膜的气体和用于稀释掺杂气体的稀释气体。 混合气体供给回路包括：设置在处理容器外部的混合气体，将掺杂气体与稀释气体混合，形成混合气体，混合气体供给管路，将混合气体从气体混合罐供给到处理容器内; 用于将掺杂气体供应到气体混合罐中的掺杂气体供应回路，以及将稀释气体供应到气体混合罐中的稀释气体供给回路。

公开(公告)号：US20090263975A1

公开(公告)日：2009-10-22

申请号：US12417939

申请日：2009-06-09

申请人： Kentaro KADONAGA ,  Yamato Tonegawa ,  Pao-Hwa Chou ,  Kazuhide Hasebe ,  Tetsuya Shibata

发明人： Kentaro KADONAGA ,  Yamato Tonegawa ,  Pao-Hwa Chou ,  Kazuhide Hasebe ,  Tetsuya Shibata

IPC分类号： H01L21/31 ,  B05C11/00

CPC分类号： H01L21/3185 ,  H01L21/02145 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/28282 ,  H01L21/31612 ,  H01L29/792

摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.

摘要翻译： 半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜， 金属源气体。 该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。

公开(公告)号：US20090124083A1

公开(公告)日：2009-05-14

申请号：US12285575

申请日：2008-10-08

申请人： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

发明人： Nobutake Nodera ,  Jun Sato ,  Kazuya Yamamoto ,  Kazuhide Hasebe

IPC分类号： H01L21/306

CPC分类号： C23C16/345 ,  C23C16/0218 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45542 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32522

摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate while supplying a film formation reactive gas from a first nozzle inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited inside the reaction chamber and the first nozzle, in a state where the reaction chamber does not accommodate the target substrate. The cleaning process includes, in order, an etching step of supplying a cleaning reactive gas for etching the by-product film into the reaction chamber, and activating the cleaning reactive gas, thereby etching the by-product film, and an exhaust step of stopping supply of the cleaning reactive gas and exhausting gas from inside the reaction chamber. The etching step is arranged to use conditions that cause the cleaning reactive gas supplied in the reaction chamber to flow into the first nozzle.

摘要翻译： 在反应室内的第一喷嘴供给成膜反应性气体的同时，使用半导体工艺的成膜装置在目标基板上形成薄膜的方法包括进行清洗处理以除去内部沉积的副产物膜 反应室和第一喷嘴，处于反应室不容纳目标基板的状态。 清洗工序依次包括：将清洗反应性气体供给到反应室内的蚀刻工序，激活清洗反应性气体，蚀刻副产物膜，以及停止排出工序 从反应室内供给清洗反应气体和排气。 蚀刻步骤被设置为使得在反应室中供应的清洁反应气体流入第一喷嘴的条件。

公开(公告)号：US20090117743A1

公开(公告)日：2009-05-07

申请号：US12285513

申请日：2008-10-07

申请人： Nobutake Nodera ,  Jun Sato ,  Masanobu Matsunaga ,  Kazuhide Hasebe

发明人： Nobutake Nodera ,  Jun Sato ,  Masanobu Matsunaga ,  Kazuhide Hasebe

IPC分类号： H01L21/461 ,  C23C16/452 ,  H01L21/311

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/4405 ,  C23C16/45519

摘要： A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.

摘要翻译： 使用半导体工艺的成膜装置在反应室内的目标基板上形成薄膜的方法包括进行清洗处理以从成膜的气体路径中除去沉积在预定区域上的副产物膜 气体供给系统，其通过在反应室不容纳目标的状态下交替重复蚀刻步骤和排气步骤多次，通过反应室向排气系统提供用于成膜的成膜气体 基质。 蚀刻步骤包括将处于活化状态的清洁气体供给到预定区域上以蚀刻副产物膜，从而蚀刻副产物膜。 排气步骤包括停止由排气系统从存在预定区域的空间供应清洁气体和排出气体。

公开(公告)号：US07507676B2

公开(公告)日：2009-03-24

申请号：US11623483

申请日：2007-01-16

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0228 ,  C23C16/36 ,  C23C16/452 ,  C23C16/45531 ,  C23C16/45546 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/3148 ,  H01L21/318

摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.

摘要翻译： 通过CVD在靶基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体的第二工艺气体和含有碳氢化合物气体的第三工艺气体的工艺领域 。 该方法包括重复地向处理区域供应第一处理气体，向处理区域供应第二处理气体，以及向处理区域供应第三处理气体。 第三处理气体的供给包括通过激励机构激励第三处理气体的向处理场供给第三处理气体的激励期间。

公开(公告)号：US07479619B2

公开(公告)日：2009-01-20

申请号：US11487434

申请日：2006-07-17

申请人： Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

发明人： Takanori Saito ,  Toshiyuki Makiya ,  Hisaei Osanai ,  Tsuyoshi Takizawa ,  Tomohisa Shimazu ,  Kazuhide Hasebe ,  Hiroyuki Yamamoto ,  Yukimasa Saito ,  Kenichi Yamaga

IPC分类号： F27B5/14 ,  F27D11/00

CPC分类号： H01L21/67109 ,  H01L21/67098

摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a heating unit provided on an inside wall of the heating-furnace body; a reaction container consisting of a single tube contained in the heating-furnace body; a gas-discharging-pipe connecting portion formed at an upper portion of the reaction container; and a first temperature controlling unit provided around the gas-discharging-pipe connecting portion.

摘要翻译： 本发明是一种热处理单元，包括：上端具有开口的加热炉体; 设置在所述加热炉体的内壁上的加热单元; 由包含在加热炉体内的单个管构成的反应容器; 形成在反应容器的上部的气体排出管连接部; 以及设置在气体排出管连接部周围的第一温度控制单元。

公开(公告)号：US07452826B2

公开(公告)日：2008-11-18

申请号：US11502503

申请日：2006-08-11

申请人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

发明人： Kazuhide Hasebe ,  Kota Umezawa ,  Yutaka Takahashi

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31662 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/67017 ,  H01L21/67109

摘要： An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a plurality of workpieces W arranged at predetermined pitches, and creating a process atmosphere containing active oxygen species and active hydroxyl species in the processing vessel 22 through the interaction of the oxidizing gas-and the reducing gas. At least either of the oxidizing gas and the reducing gas is jetted into an upstream region S1, a middle region S2 and a downstream region S3, with respect to the flowing direction of the gas, of a processing space S containing the workpieces W.

摘要翻译： 氧化法能够以改善的膜间厚度均匀性形成氧化膜。 氧化方法包括以下步骤：将氧化气体和还原气体供给到能够抽真空并保持以预定间距布置的多个工件W的处理容器22中，并且产生含有活性氧和活性羟基的工艺气氛 处理容器22通过氧化气体与还原气体的相互作用。 将氧化气体和还原性气体中的至少任一种相对于气体的流动方向喷射到包含工件的处理空间S的上游区域S1，中间区域S 2和下游区域S 3中 W.

公开(公告)号：US20080014758A1

公开(公告)日：2008-01-17

申请号：US11822979

申请日：2007-07-11

申请人： Pao-Hwa Chou ,  Kazuhide Hasebe

发明人： Pao-Hwa Chou ,  Kazuhide Hasebe

IPC分类号： H01L21/469 ,  B05C11/00

CPC分类号： C23C16/452 ,  C23C16/345 ,  C23C16/4405

摘要： A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.

摘要翻译： 使用成膜装置的方法进行第一成膜处理，同时将第一成膜气体供给到处理容器内的处理场中，从而在处理场内的第一靶基板上形成第一薄膜。 在从处理容器卸载第一目标基板之后，该方法对处理容器的内部执行清洁处理，同时向处理区域供应清洁气体，并通过激励机构产生清洁气体的等离子体。 然后，该方法进行第二成膜工艺，同时将第二成膜气体供应到工艺场中，从而在工艺场内的目标衬底上形成第二薄膜。 第二成膜工艺是通过激发机构产生第二成膜气体的等离子体的等离子体膜形成工艺。