摘要:
A co-punctual center color (such as co-punctual point PTD) is set from a color which cannot be seen or is hardly seen. A gray scale gradation value corresponding to a color difference of the color of the pixel for the co-punctual center color is calculated on pixel unit form the color original image and a gray scale is created. According to this gray scale, a gray scale image or a gradation image of the similar color is created and displayed. Alternatively, a color name of the point specified in the color original image is displayed. By executing the processing by using a camera-equipped mobile telephone, a color-sense abnormal person can identify the color which he/see cannot correctly see and know the color name without feeling any constraint.
摘要:
An electric power plant general control system for controlling power generating units. A generating unit (GU2) can operate part of the auxiliaries based on an automation command outputted from a unit computer (UC2) having a sequence function portion. The generating unit operates the remaining part of the auxiliaries based on an operation command outputted from an operation board (OB2) without a sequence function portion, the operation board disposed separately from the unit computer. A general automation computer (GAC) is connected with an upper system of the unit computer, and an operator command is inputted from an interactive apparatus (I/F4). The general control system is provided with a mock-up portion (Moc) equivalent to the sequence function portion disposed on the side of the auxiliaries controlled by the automation command outputted from the unit computer. The operation signal from the general automation computer is outputted to the unit computer and the operation board.
摘要:
In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using the CMOS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass, an elastic beam and a fixed beam is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric and the like are etched by using the CMOS process to form a cavity. Then, fine holes used in the etching are sealed with a dielectric.
摘要:
This invention relates to novel processes for the preparation of compounds of the formula [1], wherein R1, R2, R3 and R4 are as defined in the claims and description as well as pharmaceutically acceptable salts thereof. The compounds of the formula [1] are hexacyclic compounds having potent anti-tumor activity.
摘要:
Materials having different compositions are arranged to prepare a molded form in which the sound velocity characteristic is varied from high frequency to low frequency from the center toward the periphery. An ultrasonic wave-radiating face of the molded form and the back face of the ultrasonic wave-radiating face are arranged in parallel to each other to prepare a transducer in which the center region can transmit/receive high-frequency ultrasonic waves and the periphery region can transmit/receive low-frequency ultrasonic waves.
摘要:
In this invention, the CPU of a NAS board, which is liable to become hot, is cooled by concentrating a larger amount of air onto a heat sink. A plurality of logic circuit boards 3 are mounted on a control section 1D of a disc array device 1. The circuit component 4A for realizing the NAS function, liable to become hot, is provided with a heat sink 5. The aperture of the main air inlet section (Wb) is covered with a top plate 8. Airflow guidance sections (Wa, Wc) are respectively provided on both sides of the main air inlet section. Since the fin pitch of the airflow guidance sections is set narrow, the air inflow resistance (airflow resistance) of these is higher than that of the main air inlet section. Due to this difference in airflow resistance, the air in the vicinity of the airflow guidance sections is guided into the main air inlet section. The top plate 8 prevents outflow of air that has flowed into the main air inlet section to outside the heat sink 5.
摘要:
A disk drive box 10 accommodates a plurality of disk drives 20 within a case 11. A side face of each of the drives 20 is provided with a heat-absorbing part 40 including a heat pipe, corresponding to heat producing area HP. The heat taken away by the heat-absorbing part 40 is transmitted to a heat sink 50 of the rear of a backboard 30 via a heat connector 60. The heat sink 50 is cooled by cooling air flowing through an air duct 7. By cooling the drive 20 with the heat pipe, clearances between the drives 20 can be substantially eliminated, and it is made unnecessary to form an opening for air cooling in the backboard 30. Thus, size reduction is possible, and it is possible to increase the degree of freedom for a wiring pattern formed on the backboard 30.
摘要:
The Mott transistor capable of operating at a room temperature can be realized by using a self-organized nanoparticle array for the channel portion. The nanoparticle used in the present invention comprises metal and organic molecules, and the size thereof is extremely small, that is, about a few nm. Therefore, the charging energy is sufficiently larger than the thermal energy kBT=26 meV, and the transistor can operate at a room temperature. Also, since the nanoparticles with a diameter of a few nm are arranged in a self-organized manner and the Mott transition can be caused by the change of a number of electrons of the surface density of about 1012 cm−2, the transistor can operate by the gate voltage of about several V.
摘要翻译:能够在室温下操作的莫特晶体管可以通过使用用于沟道部分的自组织纳米颗粒阵列来实现。 本发明中使用的纳米颗粒包含金属和有机分子,其尺寸非常小,即约几nm。 因此,充电能量足够大于热能k B = 26meV,并且晶体管可以在室温下工作。 此外,由于直径为几nm的纳米颗粒以自组织的方式排列,并且Mott转变可以由表面密度约为10〜12的电子数量的变化引起, cm 2,晶体管可以通过约几V的栅极电压工作。
摘要:
To provide a method of manufacturing a semiconductor device for manufacturing a minute pattern with high accuracy using a stencil mask. An input layout data is classified into rectangles according to pattern width or the like, a boundary is created that divides a periphery or an inside of each classified graphics, an input pattern is fractionized by the boundary, and a complementary mask with fractionized patterns on both sides of the boundary distributed into different layers is used to form a pattern.