Method and system for alert throttling in media quality monitoring
    82.
    发明授权
    Method and system for alert throttling in media quality monitoring 有权
    在媒体质量监控中进行警报调节的方法和系统

    公开(公告)号:US07606149B2

    公开(公告)日:2009-10-20

    申请号:US11379312

    申请日:2006-04-19

    Abstract: A method for alert throttling in media quality monitoring, includes monitoring a plurality of active communication sessions. Each active communication session is between at least two endpoints. The method also includes detecting at least one quality-impacted communication session out of the plurality of active communication sessions. The method also includes generating a first alert for each detected quality-impacted communication session out of the plurality of active communication sessions until a first throttling number of quality-impacted communication sessions is detected out of the plurality of active communication sessions. Upon detecting the first throttling number of quality-impacted communication sessions, the method includes generating a second alert for each group of additional second number of quality-impacted communication sessions detected out of the plurality of active communication sessions.

    Abstract translation: 一种用于在媒体质量监测中进行警报节流的方法,包括监视多个主动通信会话。 每个活动通信会话在至少两个端点之间。 该方法还包括从多个主动通信会话中检测至少一个受质量影响的通信会话。 该方法还包括为多个活动通信会话中的每个检测到的受质量影响的通信会话生成第一警报,直到从多个主动通信会话中检测到受质量影响的通信会话的第一节流数量。 在检测到受质量影响的通信会话的第一节流数量时,该方法包括为从多个主动通信会话中检测到的对质量影响的通信会话的每组额外的第二数量生成第二警报。

    Detecting and Isolating Domain Specific Faults
    87.
    发明申请
    Detecting and Isolating Domain Specific Faults 有权
    检测和隔离域特定故障

    公开(公告)号:US20090028054A1

    公开(公告)日:2009-01-29

    申请号:US11782906

    申请日:2007-07-25

    CPC classification number: H04B3/46

    Abstract: A method for detecting and isolating domain specific faults includes comparing a first media quality report for a communication from a first node with a second media quality report for the communication from a second node. The first node comprises an ingress node of a first domain for the communication and the second node comprises an egress node of the first domain for the communication. The method also includes determining that the difference between at least one aspect of the first media quality report and at least one corresponding aspect of the second media quality report exceeds a first threshold. The method further includes, upon determining that the difference exceeds the first threshold, determining a first path between the first node and the second node used by the communication. The method additionally includes isolating at least one source causing the difference between the first media quality report and the second media quality report.

    Abstract translation: 用于检测和隔离域特定故障的方法包括将来自第一节点的通信的第一媒体质量报告与用于来自第二节点的通信的第二媒体质量报告进行比较。 第一节点包括用于通信的第一域的入口节点,并且第二节点包括用于通信的第一域的出口节点。 该方法还包括确定第一媒体质量报告的至少一个方面与第二媒体质量报告的至少一个对应方面之间的差超过第一阈值。 该方法还包括:在确定差异超过第一阈值时,确定通信使用的第一节点和第二节点之间的第一路径。 该方法还包括隔离至少一个来源,导致第一媒体质量报告和第二媒体质量报告之间的差异。

    Method for manufacturing silicon carbide semiconductor device
    88.
    发明申请
    Method for manufacturing silicon carbide semiconductor device 有权
    碳化硅半导体器件的制造方法

    公开(公告)号:US20080153216A1

    公开(公告)日:2008-06-26

    申请号:US12071186

    申请日:2008-02-19

    Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.

    Abstract translation: 碳化硅半导体器件的制造方法包括以下步骤:制备包括碳化硅衬底,漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。

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