公开(公告)号：US11705184B2

公开(公告)日：2023-07-18

申请号：US17849894

申请日：2022-06-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kiyoshi Kato ,  Takahiko Ishizu ,  Tatsuya Onuki

IPC: G11C11/24 ,  G11C11/408 ,  H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H10B99/00

CPC classification number: G11C11/4085 ,  H01L27/124 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/7869 ,  H01L29/78648 ,  H10B99/00

Abstract: A memory device having long data retention time and high reliability is provided. The memory device includes a driver circuit and a plurality of memory cells, the memory cell includes a transistor and a capacitor, and the transistor includes a metal oxide in a channel formation region. The transistor includes a first gate and a second gate, and in a period during which the memory cell retains data, negative potentials are applied to the first gate and the second gate of the transistor.

公开(公告)号：US11699782B2

公开(公告)日：2023-07-11

申请号：US16904618

申请日：2020-06-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Teppei Oguni ,  Tamae Moriwaka ,  Junpei Momo ,  Ryota Tajima ,  Nobuhiro Inoue

IPC: H01M4/133 ,  H01M4/587 ,  H01M4/36

CPC classification number: H01M4/133 ,  H01M4/366 ,  H01M4/587

Abstract: A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode.

公开(公告)号：US11695866B2

公开(公告)日：2023-07-04

申请号：US17684678

申请日：2022-03-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H04M1/72466 ,  G06F1/16 ,  G06F3/042 ,  G06F3/04886 ,  G06F3/041 ,  G06F3/0488

CPC classification number: H04M1/72466 ,  G06F1/1626 ,  G06F1/1656 ,  G06F1/1684 ,  G06F1/1694 ,  G06F3/041 ,  G06F3/0421 ,  G06F3/0488 ,  G06F3/04886 ,  G06F2200/1614 ,  G06F2200/1637 ,  H04M2250/12 ,  H04M2250/22

Abstract: To provide a mobile phone which can be used without hampering convenience in a condition where functions of the mobile phone are switched and can improve operability. The mobile phone includes an optical sensor, a display element, a pixel circuit portion where a plurality of pixels having a plurality of transistors are arranged in matrix, an optical sensor control circuit which is connected to an optical sensor driver circuit for driving the optical sensor and reads a signal from the optical sensor, a display portion control circuit which is connected to a display element driver circuit for driving the display element and outputs an image signal for displaying an image on a display portion, a gradient detection portion for outputting a signal in accordance with a gradient of the mobile phone, and an arithmetic circuit for performing display in the pixel circuit portion by switching image signals output to the display portion control circuit with a signal from the gradient detection portion.

公开(公告)号：US11694594B2

公开(公告)日：2023-07-04

申请号：US17976919

申请日：2022-10-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Susumu Kawashima ,  Koji Kusunoki ,  Kei Takahashi ,  Shunpei Yamazaki

IPC: G09G3/20 ,  H01L27/12 ,  H01L29/786 ,  G09G3/3233 ,  H04N23/50 ,  H10B99/00

CPC classification number: G09G3/2007 ,  G09G3/20 ,  G09G3/2074 ,  G09G3/3233 ,  H01L27/1225 ,  H01L27/1255 ,  H01L29/7869 ,  G09G2300/0417 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0295 ,  G09G2340/0428 ,  H01L27/124 ,  H01L27/1207 ,  H01L29/78648 ,  H04N23/50 ,  H10B99/00

Abstract: To provide a display device capable of displaying a plurality of images by superimposition using a plurality of memory circuits provided in a pixel. A plurality of memory circuits are provided in a pixel, and signals corresponding to images for superimposition are retained in each of the plurality of memory circuits. In the pixel, the signals corresponding to the images for superimposition are added to each of the plurality of memory circuits. The signals are added to the signals retained in the memory circuits by capacitive coupling. A display element can display an image corresponding to a signal in which a signal written to a pixel through a wiring is added to the signals retained in the plurality of memory circuits. Reduction in the amount of arithmetic processing for displaying images by superimposition can be achieved.

公开(公告)号：US11690245B2

公开(公告)日：2023-06-27

申请号：US17550171

申请日：2021-12-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kaoru Hatano

IPC: H01L51/52 ,  H01L51/56 ,  H01L51/00 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5246 ,  H01L51/56 ,  H01L27/3244 ,  H01L2251/5338 ,  H01L2251/566 ,  Y02E10/549 ,  Y02P70/50 ,  Y10T29/49117

Abstract: An object of one embodiment of the present invention is to provide a more convenient highly reliable light-emitting device which can be used for a variety of applications. Another object of one embodiment of the present invention is to manufacture, without complicating the process, a highly reliable light-emitting device having a shape suitable for its intended purpose. In a manufacturing process of a light-emitting device, a light-emitting panel is manufactured which is at least partly curved by processing the shape to be molded after the manufacture of an electrode layer and/or an element layer, and a protective film covering a surface of the light-emitting panel which is at least partly curved is formed, so that a light-emitting device using the light-emitting panel has a more useful function and higher reliability.

公开(公告)号：US11675452B2

公开(公告)日：2023-06-13

申请号：US17751782

申请日：2022-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Shunpei Yamazaki

IPC: G06F3/00 ,  G06F3/041 ,  G06F3/044 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/1368 ,  G02F1/1335

CPC classification number: G06F3/0412 ,  G02F1/1368 ,  G02F1/13338 ,  G02F1/134363 ,  G06F3/0445 ,  G06F3/0446 ,  G02F1/133553 ,  G02F2201/44 ,  G06F2203/04108

Abstract: An input/output device includes a first sensor electrode and a second sensor electrode. In addition, the input/output device includes a first electrode and a second electrode which are electrodes for a display element, and a substrate sandwiched between the first sensor electrode and the second sensor electrode. The second sensor electrode is formed concurrently with the first electrode using the same material. The input/output device sensors a change in capacitance of a capacitor formed between the first sensor electrode and the second sensor electrode. Furthermore, a third sensor electrode to which a floating potential is applied may be provided to overlap with the first electrode. In the input/output device, either a liquid crystal element or a light-emitting element may be used, or both the liquid crystal element and the light-emitting element may be used.

公开(公告)号：US11668988B2

公开(公告)日：2023-06-06

申请号：US15342410

申请日：2016-11-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Shunpei Yamazaki

IPC: G02F1/1368 ,  G02F1/1362 ,  G02F1/1345 ,  G02F1/1343 ,  G02F1/137 ,  G02F1/1333 ,  G02F1/1337 ,  G02F1/133 ,  G02F1/1335 ,  G02F1/1339

CPC classification number: G02F1/1368 ,  G02F1/137 ,  G02F1/1362 ,  G02F1/13439 ,  G02F1/13454 ,  G02F1/134309 ,  G02F1/134336 ,  G02F1/1339 ,  G02F1/13306 ,  G02F1/13394 ,  G02F1/13793 ,  G02F1/133302 ,  G02F1/133345 ,  G02F1/133357 ,  G02F1/133388 ,  G02F1/133512 ,  G02F1/133742 ,  G02F1/133784 ,  G02F1/136286 ,  G02F2201/121 ,  G02F2201/123

Abstract: When a pixel portion and a driver circuit are formed over one substrate and a counter electrode is formed over an entire surface of a counter substrate, the driver circuit may be adversely affected by an optimized voltage of the counter electrode. A semiconductor device according to the present invention has a structure in which: a liquid crystal layer is provided between a pair of substrates; one of the substrates is provided with a pixel electrode and a driver circuit; the other of the substrates is a counter substrate which is provided with two counter electrode layers in different potentials; and one of the counter electrode layers overlaps with the pixel electrode with the liquid crystal layer therebetween and the other of the counter electrode layers overlaps with the driver circuit with the liquid crystal layer therebetween. An oxide semiconductor layer is used for the driver circuit.

公开(公告)号：US11658185B2

公开(公告)日：2023-05-23

申请号：US17198660

申请日：2021-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Haruyuki Baba

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  G02F1/1362 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  H01L29/66757 ,  H01L29/7869 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696 ,  G02F1/1368 ,  G02F1/136222 ,  G02F2201/44

Abstract: A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.

公开(公告)号：US11646378B2

公开(公告)日：2023-05-09

申请号：US17167286

申请日：2021-02-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuhiro Tanaka ,  Mitsuhiro Ichijo ,  Toshiya Endo ,  Akihisa Shimomura ,  Yuji Egi ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78606 ,  H01L29/78648

Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.

公开(公告)号：US11646321B2

公开(公告)日：2023-05-09

申请号：US17365174

申请日：2021-07-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kengo Akimoto ,  Shigeki Komori ,  Hideki Uochi ,  Tomoya Futamura ,  Takahiro Kasahara

IPC: H01L27/32 ,  G02F1/1362 ,  H01L27/02 ,  H01L29/86 ,  H01L23/32 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1225 ,  G02F1/136204 ,  G02F1/136286 ,  H01L27/0266 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/7869

Abstract: A protective circuit includes a non-linear element which includes a gate electrode, a gate insulating layer covering the gate electrode, a first oxide semiconductor layer overlapping with the gate electrode over the gate insulating layer, and a first wiring layer and a second wiring layer whose end portions overlap with the gate electrode over the first oxide semiconductor layer and in which a conductive layer and a second oxide semiconductor layer are stacked. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element can be improved.