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110 条记录 (耗时 0.042 秒)

    Method for fabricating a semiconductor device
    82.
    发明授权
    Method for fabricating a semiconductor device 失效
    半导体器件的制造方法

    公开(公告)号：US4410375A

    公开(公告)日：1983-10-18

    申请号：US307875

    申请日：1981-10-02

    申请人： Shizuo Sawada ,  Hiroshi Iwai ,  Satoshi Maeda

    发明人： Shizuo Sawada ,  Hiroshi Iwai ,  Satoshi Maeda

    IPC分类号： H01L27/10 ,  H01L21/225 ,  H01L21/3105 ,  H01L21/322 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/78

    CPC分类号： H01L29/78 ,  H01L21/2255 ,  H01L21/3105 ,  H01L27/10805

    摘要： A method for fabricating a semiconductor device is disclosed which includes a step of forming contact holes in insulating films on a substrate, forming a silicate glass layer containing an impurity over the entire surface, and performing the phosphorus getter treatment using POCl.sub.3 at a high temperature. Even when the phosphorus getter treatment is performed after the formation of the contact holes, the substrate or electrodes exposed through the contact holes may not be reduced in thickness or damaged. The impurity may be diffused into the substrate from the silicate glass layer through the contact holes.

    摘要翻译： 公开了一种制造半导体器件的方法，其包括在基片上形成绝缘膜中的接触孔的步骤，在整个表面上形成含有杂质的硅酸盐玻璃层，并在高温下使用POCl 3进行磷吸气剂处理。 即使在形成接触孔之后进行磷吸气剂处理，也可能不会使通过接触孔露出的基板或电极的厚度减小或损坏。 杂质可以从硅酸盐玻璃层通过接触孔扩散到衬底中。

    Semiconductor device
    83.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09054122B2

    公开(公告)日：2015-06-09

    申请号：US13471389

    申请日：2012-05-14

    申请人： Satoshi Maeda ,  Yasushi Sekine ,  Tetsuya Watanabe

    发明人： Satoshi Maeda ,  Yasushi Sekine ,  Tetsuya Watanabe

    IPC分类号： H01L21/02 ,  H01L49/02 ,  H01L23/522 ,  H01L27/06 ,  H01L27/02

    CPC分类号： H01L28/60 ,  H01L23/5223 ,  H01L27/0207 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

    摘要翻译： 为了提高具有电容元件的半导体器件的性能。 在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。 作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和 然后连接到固定电位。 然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。

    Semiconductor device
    85.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08766399B2

    公开(公告)日：2014-07-01

    申请号：US13471323

    申请日：2012-05-14

    申请人： Satoshi Maeda ,  Yasushi Sekine ,  Tetsuya Watanabe

    发明人： Satoshi Maeda ,  Yasushi Sekine ,  Tetsuya Watanabe

    IPC分类号： H01L29/00

    CPC分类号： H01L28/60 ,  H01L23/5223 ,  H01L27/0207 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

    摘要翻译： 为了提高具有电容元件的半导体器件的性能。 在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。 作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和 然后连接到固定电位。 然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。

    Recording system, recording method, information processing apparatus, information processing control method, recording control device, and recording control method
    88.
    发明授权
    Recording system, recording method, information processing apparatus, information processing control method, recording control device, and recording control method 失效
    记录系统，记录方法，信息处理装置，信息处理控制方法，记录控制装置和记录控制方法

    公开(公告)号：US08438331B2

    公开(公告)日：2013-05-07

    申请号：US11840667

    申请日：2007-08-17

    申请人： Satoshi Maeda

    发明人： Satoshi Maeda

    IPC分类号： G06F12/00

    CPC分类号： H04N5/765 ,  G11B27/002 ,  G11B27/11 ,  G11B2220/2562 ,  G11B2220/41 ,  H04N5/85 ,  H04N21/2182 ,  H04N21/231

    摘要： A recording system includes a recording device, an information processing apparatus, a recording control unit, and an information processing control unit. The recording control unit manages data files recoded on first recording media and a second recording medium using a directory structure having directories of first recording media and a directory, serving as an entry folder, of the second recording medium under a root directory, selects, in response to a data file and an information file detailing category information being written in the entry folder, a first recording medium based on the category information, and controls the recording device to record the selected data file on the selected medium. The information processing control unit controls, in response to a data file and category information being specified, a writing operation so that the specified data file and the information file are written in the entry folder.

    摘要翻译： 记录系统包括记录装置，信息处理装置，记录控制单元和信息处理控制单元。 记录控制单元管理在第一记录介质上重新编码的数据文件和使用具有第一记录介质的目录和作为根目录下的第二记录介质的目录的目录的目录结构的第二记录介质，在 对数据文件的响应以及详细记录在条目文件夹中的类别信息的信息文件，基于类别信息的第一记录介质，并且控制记录装置将选择的数据文件记录在所选择的介质上。 信息处理控制单元响应于指定的数据文件和类别信息来控制写入操作，使得指定的数据文件和信息文件被写入入口文件夹。

    Urethane resin, actinic energy ray curable adhesive, and back protective sheet for solar cell
    89.
    发明授权
    Urethane resin, actinic energy ray curable adhesive, and back protective sheet for solar cell 失效
    聚氨酯树脂，光化学能量射线固化型粘合剂和太阳能电池背面保护片

    公开(公告)号：US08404969B2

    公开(公告)日：2013-03-26

    申请号：US13325539

    申请日：2011-12-14

    申请人： Satoshi Maeda ,  Mitsuo Umezawa ,  Hiroshi Yamaguchi ,  Takeshi Yoshikawa

    发明人： Satoshi Maeda ,  Mitsuo Umezawa ,  Hiroshi Yamaguchi ,  Takeshi Yoshikawa

    IPC分类号： H01L31/00 ,  B32B27/40 ,  C09J163/00 ,  C08G18/67

    CPC分类号： C09J175/16 ,  C08G18/12 ,  C08G18/44 ,  C08G18/683 ,  C08G18/8116 ,  H01L31/049 ,  Y02E10/50 ,  Y10T428/31515 ,  Y10T428/31522 ,  Y10T428/31551

    摘要： An actinic energy ray curable adhesive contains a urethane resin (D) and a epoxy resin (E). The urethane resin (D) is prepared by reacting a diol ingredient (A1) having no (meth)acryloyl group, an optional diol ingredient (A2) having no (meth)acryloyl group, no carbonate structure and no alicyclic structure, a polyol ingredient (B) having a (meth)acryloyl group and two or more hydroxyl groups in a molecule, and a polyisocyanate ingredient (C) together. The ingredient (A1) is selected from a diol (a1) having a carbonate structure and an alicyclic structure in a molecule, a combination of a diol (a2) having no alicyclic structure but having a carbonate structure, and a diol (a3) having no carbonate structure but having an alicyclic structure, and a combination of a diol (a1) and at least one of the diol (a2) and the diol (a3).

    摘要翻译： 光化学能量射线固化型粘合剂含有聚氨酯树脂（D）和环氧树脂（E）。 聚氨酯树脂（D）通过使没有（甲基）丙烯酰基的二醇成分（A1），不具有（甲基）丙烯酰基的任选的二醇成分（A2），不具有碳酸酯结构且没有脂环结构的多元醇成分 （B）在分子中具有（甲基）丙烯酰基和两个或更多个羟基，以及多异氰酸酯成分（C）。 成分（A1）选自分子中具有碳酸酯结构和脂环结构的二醇（a1），不具有脂环结构但具有碳酸酯结构的二醇（a2）和具有碳酸酯结构的二醇（a3）的组合，以及具有 没有碳酸酯结构但具有脂环结构，以及二醇（a1）和二醇（a2）和二醇（a3）中的至少一种的组合。

    Semiconductor device
    90.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08198698B2

    公开(公告)日：2012-06-12

    申请号：US12395202

    申请日：2009-02-27

    申请人： Satoshi Maeda ,  Yasushi Sekine ,  Tetsuya Watanabe

    发明人： Satoshi Maeda ,  Yasushi Sekine ,  Tetsuya Watanabe

    IPC分类号： H01L21/70 ,  H01L21/02

    CPC分类号： H01L28/60 ,  H01L23/5223 ,  H01L27/0207 ,  H01L27/0629 ,  H01L2924/0002 ,  H01L2924/00

    摘要： To improve a performance of a semiconductor device having a capacitance element. An MIM type capacitance element, an electrode of which is formed with comb-shaped metal patterns composed of the wirings, is formed over a semiconductor substrate. A conductor pattern, which is a dummy gate pattern for preventing dishing in a CMP process, and an active region, which is a dummy active region, are disposed below the capacitance element, and these are coupled to shielding metal patterns composed of the wirings and then connected to a fixed potential. Then, the conductor pattern and the active region are disposed so as not to overlap the comb-shaped metal patterns in the wirings in a planar manner.

    摘要翻译： 为了提高具有电容元件的半导体器件的性能。 在半导体衬底上形成MIM型电容元件，其电极形成有由配线构成的梳状金属图案。 作为用于防止CMP工艺中的凹陷的伪栅极图案的导体图案和作为虚拟有源区的有源区域设置在电容元件下方，并且这些导体图案耦合到由布线和 然后连接到固定电位。 然后，导体图案和有源区域被布置为不以平面方式与布线中的梳状金属图案重叠。