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公开(公告)号:US08976634B2
公开(公告)日:2015-03-10
申请号:US14313540
申请日:2014-06-24
Applicant: Seagate Technology LLC
Inventor: Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Michael Allen Seigler
CPC classification number: G11B5/314 , G11B5/3106 , G11B5/4866 , G11B5/6088 , G11B13/08 , G11B2005/0021
Abstract: Devices that include a near field transducer (NFT), the NFT including a peg having five exposed surfaces, the peg including a first material; an overlying structure; at least one intermixing layer, positioned between the peg and the overlying structure, the at least one intermixing layer positioned on at least one of the five surfaces of the peg, the intermixing layer including at least the first material and a second material.
Abstract translation: 包括近场换能器(NFT)的装置,所述NFT包括具有五个暴露表面的钉,所述钉包括第一材料; 上层结构; 至少一个混合层,位于所述栓钉和所述上覆结构之间,所述至少一个混合层定位在所述栓钉的五个表面中的至少一个上,所述混合层至少包括所述第一材料和第二材料。
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82.
公开(公告)号:US20140120374A1
公开(公告)日:2014-05-01
申请号:US13666255
申请日:2012-11-01
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Meng Zhu , Michael C. Kautzky
IPC: G11B5/39
CPC classification number: G11B5/3906 , G11B5/11 , G11B5/3146 , G11B5/3912 , Y10T428/1121 , Y10T428/1129 , Y10T428/115
Abstract: A device including a magnetoresistive sensor; a top shield; and a bottom shield, wherein the magnetoresistive sensor is positioned between the top shield and the bottom shield, and wherein at least one of the bottom shield and the top shield include NiFeX, wherein X is chosen from Nb, Mo, Ta, or W.
Abstract translation: 一种包括磁阻传感器的装置; 顶层盾牌 和底部屏蔽,其中所述磁阻传感器位于所述顶部屏蔽和所述底部屏蔽之间,并且其中所述底部屏蔽和所述顶部屏蔽中的至少一个包括NiFeX,其中X选自Nb,Mo,Ta或W.
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公开(公告)号:US20130286804A1
公开(公告)日:2013-10-31
申请号:US13795616
申请日:2013-03-12
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Tong Zhao , Ibro Tabakovic , Michael C. Kautzky , Venkatram Venkatasamy , Jie Gong
IPC: G11B13/04
CPC classification number: G11B5/314 , G11B5/6088 , G11B13/04 , G11B2005/0021
Abstract: Disclosed herein is an apparatus that includes a near field transducer positioned adjacent to an air bearing surface of the apparatus; a first magnetic pole; and a heat sink positioned between the first magnetic pole and the near field transducer, wherein the heat sink includes a first and second portion, with the first portion being adjacent the near field transducer and the second portion being adjacent the first magnetic pole, the first portion including a plasmonic material, and the second portion including a diffusion blocking material.
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公开(公告)号:US20130107679A1
公开(公告)日:2013-05-02
申请号:US13719749
申请日:2012-12-19
Applicant: Seagate Technology LLC
Inventor: Xiaoyue Huang , Michael C. Kautzky , Zoran Jandric
IPC: G11B13/08
CPC classification number: G11B13/08 , G11B5/314 , G11B5/6088 , G11B2005/0021
Abstract: Devices having an air bearing surface, the device including a magnetic write pole positioned adjacent the air bearing surface; a near field transducer including a peg region and an adjacent disk region, wherein the peg region is adjacent the air bearing surface; a heat sink; and an optical waveguide including a top cladding layer and a core layer, wherein the heat sink is positioned between the magnetic write pole and the near field transducer and the near field transducer is positioned between the optical waveguide and the heat sink, and wherein at least a portion of at least one of the heat sink, the optical waveguide, or the write pole includes beryllium oxide (BeO).
Abstract translation: 具有空气轴承表面的装置,该装置包括邻近空气轴承表面定位的磁性写入磁极; 包括钉区域和相邻盘区域的近场换能器,其中所述钉区域邻近所述空气支承表面; 散热器 以及包括顶部包覆层和芯层的光波导,其中所述散热器位于所述磁性写入极和所述近场换能器之间,并且所述近场换能器位于所述光波导和所述散热器之间,并且其中至少 散热器,光波导或写极中的至少一个的一部分包括氧化铍(BeO)。
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公开(公告)号:US11798583B1
公开(公告)日:2023-10-24
申请号:US17478461
申请日:2021-09-17
Applicant: Seagate Technology LLC
Inventor: Jie Gong , Steven C. Riemer , John A. Rice , Michael C. Kautzky
CPC classification number: G11B5/3163 , C25D3/562 , C25D5/18 , G11B5/3909
Abstract: A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a thermally stable soft magnetic material. The method also includes applying a combined stepped and pulsed current to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the thermally stable soft magnetic material is formed on the wafer.
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公开(公告)号:US11798581B1
公开(公告)日:2023-10-24
申请号:US17657698
申请日:2022-04-01
Applicant: Seagate Technology LLC
Inventor: Venkateswara Rao Inturi , Michael C. Kautzky , Tong Zhao
CPC classification number: G11B5/3133 , C23C14/086 , C23C14/3414 , G11B13/08 , G11B2005/0021
Abstract: A hard disk drive (HDD) includes a heat-assisted magnetic recording (HAMR) head. The HAMR head includes one or more features comprising a nanoparticle-reinforced plasmonic matrix. The nanoparticle-reinforced plasmonic matrix comprises a plasmonic metal and a plurality of nanoparticles dispersed in the plasmonic metal. The nanoparticles comprise a transparent conductive oxide.
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公开(公告)号:US11377749B1
公开(公告)日:2022-07-05
申请号:US16705991
申请日:2019-12-06
Applicant: Seagate Technology LLC
Inventor: Jie Gong , Steven C. Riemer , John A. Rice , Hilton Erskine , Michael C. Kautzky , Xuelian Xu
Abstract: A method includes immersing a wafer in an electrolyte including a plurality of compounds having elements of a high damping magnetic alloy with very low impurity and small uniform grain size. The method also includes applying a pulsed current with a certain range of duty cycle and pulse length to the wafer when the wafer is immersed in an electrolyte. The wafer is removed from the electrolyte when a layer of the high damping magnetic alloy is formed on the wafer.
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88.
公开(公告)号:US10699740B2
公开(公告)日:2020-06-30
申请号:US15357333
申请日:2016-11-21
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Sethuraman Jayashankar , Sarbeswar Sahoo , Justin Glen Brons , Steve C. Riemer , Jie Gong , Michael Allen Seigler
IPC: G11B11/00 , G11B5/40 , G11B13/08 , G11B5/31 , G11B7/1387 , G11B7/24059 , G11B5/60 , C23C14/58 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , C22C21/10 , C22C22/00 , C22C27/00 , C22C27/02 , C22C27/06 , C22C38/06 , G11B5/48 , C01F7/00 , C01G5/00 , B32B15/01 , C22C5/04 , C22C5/10 , C22C9/00 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/10 , C22C19/07 , C22C21/06 , C22C24/00 , C22C28/00 , C22C30/02 , G11B5/00
Abstract: A device including a near field transducer, the near field transducer including gold (Au), silver (Ag), copper (Cu), or aluminum (Al), and at least two other secondary atoms, the at least two other secondary atoms selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), manganese (Mn), tellurium (Te), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), germanium (Ge), hydrogen (H), iodine (I), rubidium (Rb), selenium (Se), terbium (Tb), nitrogen (N), oxygen (O), carbon (C), antimony (Sb), gadolinium (Gd), samarium (Sm), thallium (Tl), cadmium (Cd), neodymium (Nd), phosphorus (P), lead (Pb), hafnium (Hf), niobium (Nb), erbium (Er), zinc (Zn), magnesium (Mg), palladium (Pd), vanadium (V), zinc (Zn), chromium (Cr), iron (Fe), lithium (Li), nickel (Ni), platinum (Pt), sodium (Na), strontium (Sr), calcium (Ca), yttrium (Y), thorium (Th), beryllium (Be), thulium (Tm), erbium (Er), ytterbium (Yb), promethium (Pm), neodymium (Nd cobalt (Co), cerium (Ce), lanthanum (La), praseodymium (Pr), or combinations thereof.
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公开(公告)号:US20190153590A1
公开(公告)日:2019-05-23
申请号:US16260925
申请日:2019-01-29
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Tong Zhao , Michael C. Kautzky , Sarbeswar Sahoo , Justin Brons , Jie Gong , Yuhang Cheng
Abstract: Devices having an air bearing surface (ABS), the device including a near field transducer, the near field transducer having a peg and a disc, the peg having a region adjacent the ABS, the peg including a plasmonic material selected from gold (Au), silver (Ag), copper (Cu), ruthenium (Ru), rhodium (Rh), aluminum (Al), or combinations thereof; and at least one other secondary atom selected from germanium (Ge), tellurium (Te), aluminum (Al), antimony (Sb), tin (Sn), mercury (Hg), indium (In), zinc (Zn), iron (Fe), copper (Cu), manganese (Mn), silver (Ag), chromium (Cr), cobalt (Co), and combinations thereof, wherein a concentration of the secondary atom is higher at the region of the peg adjacent the ABS than a concentration of the secondary atom throughout the bulk of the peg. Methods of forming NFTs are also disclosed.
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公开(公告)号:US20180366153A1
公开(公告)日:2018-12-20
申请号:US15952506
申请日:2018-04-13
Applicant: SEAGATE TECHNOLOGY LLC
Inventor: Yuhang Cheng , Tong Zhao , Michael C. Kautzky , Ed F. Rejda , Kurt W. Wierman , Scott Franzen , Sethuraman Jayashankar , Sarbeswar Sahoo , Jie Gong , Michael Allen Seigler
IPC: G11B13/08 , G11B7/24059 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/06 , C22C9/02 , C22C9/08 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C20/00 , C22C21/00 , C22C21/02 , G11B7/1387 , G11B5/60 , G11B5/48 , G11B5/31 , C23C14/58 , C22C38/06 , C22C27/06 , C22C27/02 , C22C27/00 , C22C22/00 , C22C21/10 , C22C9/04 , G11B5/00 , C22C9/05 , C22C28/00 , C22C30/02 , C22C9/06 , B32B15/01 , C22C9/10 , C22C21/06 , C22C5/10 , C22C9/00 , C22C24/00 , C22C5/04 , C22C19/07
CPC classification number: G11B13/08 , B32B15/01 , B32B15/018 , C01F7/00 , C01G5/00 , C22C5/02 , C22C5/04 , C22C5/06 , C22C5/10 , C22C9/00 , C22C9/02 , C22C9/04 , C22C9/05 , C22C9/06 , C22C9/08 , C22C9/10 , C22C11/04 , C22C13/00 , C22C18/02 , C22C19/03 , C22C19/07 , C22C20/00 , C22C21/00 , C22C21/003 , C22C21/02 , C22C21/06 , C22C21/10 , C22C22/00 , C22C24/00 , C22C27/00 , C22C27/02 , C22C27/025 , C22C27/06 , C22C28/00 , C22C30/02 , C22C38/06 , C23C14/5833 , G11B5/3106 , G11B5/314 , G11B5/3163 , G11B5/4866 , G11B5/6088 , G11B7/1387 , G11B7/24059 , G11B2005/0021
Abstract: A device including a near field transducer, the near field transducer including gold (Au) and at least one other secondary atom, the at least one other secondary atom selected from: boron (B), bismuth (Bi), indium (In), sulfur (S), silicon (Si), tin (Sn), hafnium (Hf), niobium (Nb), manganese (Mn), antimony (Sb), tellurium (Te), carbon (C), nitrogen (N), and oxygen (O), and combinations thereof; erbium (Er), holmium (Ho), lutetium (Lu), praseodymium (Pr), scandium (Sc), uranium (U), zinc (Zn), and combinations thereof; and barium (Ba), chlorine (Cl), cesium (Cs), dysprosium (Dy), europium (Eu), fluorine (F), gadolinium (Gd), germanium (Ge), hydrogen (H), iodine (I), osmium (Os), phosphorus (P), rubidium (Rb), rhenium (Re), selenium (Se), samarium (Sm), terbium (Tb), thallium (Th), and combinations thereof.
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