公开(公告)号：US10103305B2

公开(公告)日：2018-10-16

申请号：US15523037

申请日：2015-10-16

Applicant: Seoul Viosys Co., Ltd.

Inventor： Yeo Jin Yoon ,  Chung Hoon Lee

IPC: H01L33/62 ,  H01L33/36 ,  H01L33/32 ,  H01L33/38

Abstract: A high-efficiency light-emitting device of the present invention includes: a nitride-based semiconductor laminate layer comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a substrate comprising a first electrode and a second electrode each connected to the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first pad electrode and a second pad electrode each connected with the first electrode and the second electrode, and a first connection pad and a second connection pad each connected with the first pad electrode and the second pad electrode; and a solder positioned between the pad electrodes and the connection pads.

公开(公告)号：US09991424B2

公开(公告)日：2018-06-05

申请号：US15355219

申请日：2016-11-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Tae Hyuk Im ,  Chang Yeon Kim ,  Yeo Jin Yoon ,  Joon Hee Lee ,  Ki Bum Nam ,  Da Hye Kim ,  Chang Ik Im ,  Young Wug Kim

IPC: H01L31/12 ,  H01L33/44 ,  H01L33/22 ,  H01L33/00 ,  H01L33/20 ,  H01L33/38 ,  H01L33/32 ,  H01L33/06 ,  H01L33/60 ,  H01L33/40

CPC classification number: H01L33/44 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: A light-emitting diode including a support substrate, a semiconductor stack disposed on the support substrate and including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer, a reflective metal layer disposed between the support substrate and the semiconductor stack, the reflective metal layer being in ohmic contact with the p-type compound semiconductor layer of the semiconductor stack and including a groove exposing a portion of the semiconductor stack, an insulation layer disposed between the support substrate and the semiconductor stack and disposed in the groove, and a first electrode including a first electrode pad and a first electrode extension and contacting the n-type compound semiconductor layer of the semiconductor stack, in which the first electrode extension is connected to the first electrode pad, and the first electrode extension is formed along an outer boundary of the light-emitting diode.

公开(公告)号：US09735329B2

公开(公告)日：2017-08-15

申请号：US15147619

申请日：2016-05-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee Oh ,  Mae Yi Kim ,  Seom Geun Lee ,  Myoung Hak Yang ,  Yeo Jin Yoon

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/42 ,  H01L33/08 ,  H01L27/15 ,  H01L33/14

CPC classification number: H01L33/62 ,  H01L27/15 ,  H01L27/156 ,  H01L33/08 ,  H01L33/14 ,  H01L33/385 ,  H01L33/387 ,  H01L33/42 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer disposed on the first and second light emitting cells. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell.

公开(公告)号：US20170186810A1

公开(公告)日：2017-06-29

申请号：US15461026

申请日：2017-03-16

Applicant: Seoul Viosys Co., Ltd.

Inventor： JONG LAM LEE ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L27/15 ,  H01L33/24 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

公开(公告)号：US09673355B2

公开(公告)日：2017-06-06

申请号：US14229693

申请日：2014-03-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Sum Geun Lee ,  Jin Cheol Shin ,  Yeo Jin Yoon ,  Kyoung Wan Kim ,  Jeong Hee Yang

IPC: H01L33/38 ,  H01L33/62 ,  H01L27/15 ,  H01L33/08 ,  H01L33/20 ,  H01L33/44

CPC classification number: H01L33/387 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

公开(公告)号：US09627435B2

公开(公告)日：2017-04-18

申请号：US14958253

申请日：2015-12-03

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/08 ,  H01L33/24 ,  H01L33/32 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44 ,  H01L27/32 ,  H01L33/28 ,  H01L51/52

CPC classification number: H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes a first semiconductor layer and a second semiconductor layer, an active layer between the first and the second semiconductors, a conductive material on the second semiconductor layer, an inclined surface, a first insulation layer overlaps each light emitting cell, an electrically conductive material overlaps the first insulation layer to couple two of the plurality of light emitting cells, and a second insulation layer overlaps the electrically conductive material. A light-transmitting material is used in both the first insulation layer and the second insulation layer. The inclined surface is continuous and has a slope of approximately 20° to approximately 80° from a horizontal plane based on the substrate.

公开(公告)号：US20170077355A1

公开(公告)日：2017-03-16

申请号：US15219086

申请日：2016-07-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jin Woong Lee ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Ye Seul Kim

IPC: H01L33/40 ,  H01L33/44 ,  H01L33/42 ,  H01L33/38

CPC classification number: H01L33/405 ,  H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44

Abstract: According to the present invention, a light-emitting diode with improved light extraction efficiency comprises: a semiconductor laminated structure including an N-layer, a light-emitting layer, and a P-layer formed on a substrate; an N-type electrode formed on the N-layer; and a P-type electrode formed on the P-layer, wherein the N-type electrode and the P-type electrode include a pad electrode and a dispersion electrode, and the N-type electrode and/or the P-type electrode includes a reflective electrode layer for reflecting light onto the dispersion electrode. Thus, the light-emitting diode has a reflective electrode layer on the electrode so as to improve light extraction efficiency. Further, a reflective layer is patterned beneath a pad unit, thus forming roughness and improving adhesion.

Abstract translation: 根据本发明，具有提高光提取效率的发光二极管包括：包括形成在基板上的N层，发光层和P层的半导体层叠结构; 形成在N层上的N型电极; 和形成在P层上的P型电极，其中，所述N型电极和所述P型电极包括焊盘电极和分散电极，并且所述N型电极和/或所述P型电极包括： 用于将光反射到分散电极上的反射电极层。 因此，发光二极管在电极上具有反射电极层，以提高光提取效率。 此外，反射层在垫单元下方被图案化，从而形成粗糙度并改善粘附性。

公开(公告)号：US20170069789A1

公开(公告)日：2017-03-09

申请号：US15354928

申请日：2016-11-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/14 ,  H01L33/62 ,  H01L33/32 ,  H01L33/42

CPC classification number: H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

Abstract translation: 提供一种发光二极管，其包括：在一个方向上具有细长矩形形状的基板; 位于所述基板上并具有用于暴露第一导电半导体层的开口的发光结构; 设置成更靠近所述基板的第一角部的第一电极焊盘; 第二电极焊盘，被设置为相对靠近所述衬底的与所述第一拐角相对的第二角部; 从所述第一电极焊盘延伸的第一延伸部; 以及从所述第二电极焊盘延伸到所述第一延伸部的侧面的第二延伸部和第三延伸部，其中连接所述第二延伸部的端部和所述第三延伸部的端部的假想线位于所述第一电极焊盘和所述第一角部之间 。

公开(公告)号：US09515121B2

公开(公告)日：2016-12-06

申请号：US14631062

申请日：2015-02-25

Applicant: Seoul Viosys Co., Ltd.

Inventor： Se Hee Oh ,  Seom Geun Lee ,  Yeo Jin Yoon ,  Hyun Haeng Lee ,  Mae Yi Kim

IPC: H01L33/20 ,  H01L27/15 ,  H01L33/62 ,  H01L33/38

CPC classification number: H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: An exemplary light emitting diode includes a substrate; a first light emitting cell and a second light emitting cell disposed over the substrate and separated from each other; and an interconnection electrically connecting the first light emitting cell to the second light emitting cell. Each of the first and second light emitting cells includes a first conductive-type semiconductor layer, a second conductive-type semiconductor layer disposed over the first conductive-type semiconductor layer, and an active layer disposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer. At least one of the first light emitting cell and the second light emitting cell includes a side surface inclined with respect to the substrate. The side surface includes a first inclined portion forming an acute angle with respect to the substrate, a second inclined portion forming an obtuse angle with respect to the substrate, and an inclination discontinuity section.

Abstract translation: 示例性的发光二极管包括基板; 第一发光单元和设置在基板上并彼此分离的第二发光单元; 以及将第一发光单元电连接到第二发光单元的互连。 第一和第二发光单元中的每一个包括第一导电型半导体层，设置在第一导电型半导体层上的第二导电型半导体层以及设置在第一导电型半导体层和第二导电类型半导体层之间的有源层 第二导电型半导体层。 第一发光单元和第二发光单元中的至少一个包括相对于基板倾斜的侧表面。 侧面包括相对于基板形成锐角的第一倾斜部分，相对于基板形成钝角的第二倾斜部分和倾斜不连续部分。

公开(公告)号：US09397264B2

公开(公告)日：2016-07-19

申请号：US14630273

申请日：2015-02-24

Applicant: Seoul Viosys Co., Ltd.

Inventor： Ye Seul Kim ,  Kyoung Wan Kim ,  Yeo Jin Yoon ,  Sang Hyun Oh ,  Keum Ju Lee ,  Jin Woong Lee ,  Da Yeon Jeong ,  Sang Won Woo

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/40 ,  H01L33/44 ,  H01L33/60 ,  H01L33/36 ,  H01L33/42 ,  H01L33/46 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/387 ,  H01L33/0008 ,  H01L33/10 ,  H01L33/20 ,  H01L33/36 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0066

Abstract: Disclosed herein in an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad located on the second conductive type semiconductor layer opposite to the second conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

Abstract translation: 本文公开在包括电极焊盘的LED芯片中。 LED芯片包括：第一导电型半导体层，第一导电类型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠， 位于与第二导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘，由此增加发光面积。