公开(公告)号：US20050199926A1

公开(公告)日：2005-09-15

申请号：US10895074

申请日：2004-07-21

申请人： Yoshiaki Fukuzumi ,  Shigeki Takahashi

发明人： Yoshiaki Fukuzumi ,  Shigeki Takahashi

IPC分类号： G11C11/15 ,  H01L21/027 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  H01L43/12

CPC分类号： H01L43/08 ,  G11C11/16 ,  H01L27/228

摘要： According to an aspect of the present invention, there is disclosed a magnetic resistive element comprising a first magnetic layer whose magnetized state changes in accordance with data, a nonmagnetic layer disposed on the first magnetic layer, and a second magnetic layer which is disposed on the nonmagnetic layer and whose magnetized state is fixed, wherein the first magnetic layer has a cross shape in which a maximum length of a first direction is L1 and a maximum length of a second direction crossing the first direction at right angles is L2, and the second magnetic layer has a tetragonal shape in which the maximum length of the first direction is L3 (≦L1) and the maximum length of the second direction is L4 (

摘要翻译： 根据本发明的一个方面，公开了一种磁阻元件，其包括磁化状态根据数据变化的第一磁性层，设置在第一磁性层上的非磁性层和设置在第一磁性层上的第二磁性层 非磁性层并且其磁化状态是固定的，其中第一磁性层具有第一方向的最大长度为L1并且与第一方向垂直的第二方向的最大长度为L2的十字形状，并且第二磁性层 磁性层具有四边形形状，其中第一方向的最大长度为L3（<= L1），第二方向的最大长度为L4（

公开(公告)号：US20050078418A1

公开(公告)日：2005-04-14

申请号：US10968336

申请日：2004-10-20

申请人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Saito ,  Masayuki Sagoi ,  Minoru Amano ,  Kentaro Nakajima ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G01R33/09 ,  G11B5/39 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01F10/26 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L43/08 ,  G11B5/33 ,  G11B5/127

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3954 ,  G11C11/15 ,  G11C11/16 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetoresistance effect element including a first pinned ferromagnetic layer, a second pinned ferromagnetic layer facing the first pinned ferromagnetic layer, surface regions of the first and second pinned ferromagnetic layer facing each other being different from each other in composition, a free ferromagnetic layer intervening between the first and second pinned ferromagnetic layers, a first tunnel barrier layer intervening between the first pinned ferromagnetic layer and the free ferromagnetic layer, and a second tunnel barrier layer intervening between the second pinned ferromagnetic layer and the free ferromagnetic layer.

摘要翻译： 提供了一种磁阻效应元件，包括第一被钉扎铁磁层，面对第一被钉扎铁磁层的第二钉扎铁磁层，第一和第二钉扎铁磁层彼此面对的表面区域在组成上彼此不同，自由铁磁性 介于第一和第二被钉扎铁磁层之间的介电层，介于第一被钉扎铁磁层和自由铁磁层之间的第一隧道势垒层以及介于第二钉扎铁磁层与自由铁磁层之间的第二隧道势垒层。

公开(公告)号：US06878879B2

公开(公告)日：2005-04-12

申请号：US10353518

申请日：2003-01-27

申请人： Shigeki Takahashi ,  Shintaro Muro

发明人： Shigeki Takahashi ,  Shintaro Muro

IPC分类号： H02G3/04 ,  H02G3/06 ,  H02G3/30 ,  H02G3/38 ,  H02G1/00

CPC分类号： H02G3/0418 ,  H02G3/0437 ,  H02G3/0608

摘要： A protector for wire harnesses and mounting mechanism are provided, including a body with closed cross section through which the wire harnesses are routed and at least two mounting elements by which the protector is attached to receiving elements. The protector has a feature that a position adjuster including a flexible portion is provided in the body extending between the two mounting elements so that a relative position of the two mounting elements can be easily adjusted.

摘要翻译： 提供了用于线束和安装机构的保护器，其包括具有闭合横截面的主体，线束穿过该主体布置，以及至少两个安装元件，保护器通过该至少两个安装元件附接到接收元件。 保护器具有在两个安装元件之间延伸的主体中设置包括柔性部分的位置调节器的特征，使得可以容易地调节两个安装元件的相对位置。

公开(公告)号：US06873023B2

公开(公告)日：2005-03-29

申请号：US10418047

申请日：2003-04-18

申请人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

发明人： Yoshiaki Asao ,  Yoshihisa Iwata ,  Yoshiaki Saito ,  Hiroaki Yoda ,  Tomomasa Ueda ,  Minoru Amano ,  Shigeki Takahashi ,  Tatsuya Kishi

IPC分类号： G11C11/16 ,  H01L43/00

CPC分类号： G11C11/16

摘要： A write word line is disposed right under an MTJ element. The write word line extends in an X direction, and a lower surface of the line is coated with a yoke material which has a high permeability. A data selection line (read/write bit line) is disposed right on the MTJ element. A data selection line extends in a Y direction intersecting with the X direction, and an upper surface of the line is coated with the yoke material which has the high permeability. At a write operation time, a magnetic field generated by a write current flowing through a write word line B and data selection line functions on the MTJ element by the yoke material with good efficiency.

摘要翻译： 写字线被放置在MTJ元素的正下方。 写字线在X方向上延伸，并且线的下表面涂覆有具有高磁导率的磁轭材料。 数据选择线（读/写位线）设置在MTJ元件上。 数据选择线在与X方向交叉的Y方向上延伸，并且线的上表面涂覆有具有高磁导率的磁轭材料。 在写操作时刻，通过写入字线B和数据选择线产生的写入电流产生的磁场通过磁轭材料以良好的效率在MTJ元件上起作用。

公开(公告)号：US06868002B2

公开(公告)日：2005-03-15

申请号：US10771537

申请日：2004-02-05

申请人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

发明人： Yoshiaki Saito ,  Koichiro Inomata ,  Minoru Amano ,  Kentaro Nakajima ,  Masayuki Sagoi ,  Tatsuya Kishi ,  Shigeki Takahashi

IPC分类号： G11C11/14 ,  G11C11/15 ,  H01F10/16 ,  H01F10/26 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08 ,  G11C11/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  H01F10/3231 ,  H01L27/224 ,  H01L27/228

摘要： There is provided a magnetic memory including first and second wirings intersecting each other and disposed apart from each other, a magnetoresistance effect film positioned between the first and second wirings, and a first magnetic film including a first portion facing the magnetoresistance effect film with the first wiring interposed therebetween and a pair of second portions positioned on both sides of the first wiring and magnetically connected to the first portion, each of the first and second portions having either one of a high saturation magnetization soft magnetic material containing cobalt and a metal-nonmetal nano-granular film.

摘要翻译： 提供了一种磁存储器，包括彼此相交并彼此分开布置的第一和第二布线，位于第一和第二布线之间的磁阻效应膜，以及第一磁性膜，其包括面向磁阻效应膜的第一部分，其具有第一 插入其间的布线和位于第一布线的两侧并与第一部分磁连接的一对第二部分，第一和第二部分中的每一个具有包含钴的高饱和磁化软磁材料和金属非金属 纳米颗粒膜。

公开(公告)号：US06831857B2

公开(公告)日：2004-12-14

申请号：US10329417

申请日：2002-12-27

申请人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

发明人： Minoru Amano ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Yoshiaki Saito ,  Shigeki Takahashi ,  Tomomasa Ueda ,  Katsuya Nishiyama ,  Yoshiaki Asao ,  Yoshihisa Iwata

IPC分类号： G11C1115

CPC分类号： G11C11/15

摘要： A highly reliable magnetic memory exhibits enhanced data-holding stability at high storage density in a storage layer of a magnetoresistive effect element used for memory cells. A magnetic memory includes a memory cell array having first wirings, second wirings intersecting the first wirings and memory cells each provided at an intersection area of the corresponding first and second wirings. Each memory cell is selected when the corresponding first and second wirings are selected. Each memory cell includes a magnetoresistive effect element having a storage layer in which data is stored by magnetic fields generated when current flows the selected first and second wirings, a first magnetic member, having two ends, provided as partially surrounding each first wiring and the two ends being situated in a direction of easy axis of magnetization, to form a closed-loop magnetic circuitry with the storage layer, and a second magnetic member, having two ends, provided as partially surrounding each second wiring and the two ends being situated in a direction of hard axis of magnetization, to amplify magnetic fields applied to the storage layer in the direction of hard axis of magnetization. Each end of the first magnetic member is situated as closer than each end of the second magnetic member to the storage layer.

公开(公告)号：US06768183B2

公开(公告)日：2004-07-27

申请号：US10125582

申请日：2002-04-19

申请人： Shigeki Takahashi ,  Satoshi Shiraki ,  Hiroaki Himi ,  Hiroyuki Ban ,  Osamu Seya

发明人： Shigeki Takahashi ,  Satoshi Shiraki ,  Hiroaki Himi ,  Hiroyuki Ban ,  Osamu Seya

IPC分类号： H01L2900

CPC分类号： H01L27/0826 ,  H01L27/0623

摘要： An NPN bipolar transistor and a PNP bipolar transistor are formed in a semiconductor substrate. The NPN bipolar transistor has a p type emitter region, a p type collector region and an n type base region and is formed in an NPN forming region. The PNP bipolar transistor has an n type emitter region, an n type collector region and a p type base region and is formed in a PNP forming region. Only one conductive type burying region is formed in at least one of the NPN forming region and the PNP forming region. A current that flows from the p type emitter region to the n type base region flows in the n type base region in a direction perpendicular to the substrate.

摘要翻译： 在半导体衬底中形成NPN双极晶体管和PNP双极晶体管。 NPN双极晶体管具有p型发射极区域，p型集电极区域和n型基极区域，并且形成在NPN形成区域中。 PNP双极晶体管具有n型发射极区域，n型集电极区域和p型基极区域，并且形成在PNP形成区域中。 在NPN形成区域和PNP形成区域的至少一个中仅形成一个导电型掩埋区域。 从p型发射极区域流向n型基极区域的电流在与基板垂直的方向上流入n型基极区域。

公开(公告)号：US06573144B2

公开(公告)日：2003-06-03

申请号：US10210059

申请日：2002-08-02

申请人： Shigeki Takahashi ,  Hiroaki Himi ,  Satoshi Shiraki ,  Masatoshi Kato

发明人： Shigeki Takahashi ,  Hiroaki Himi ,  Satoshi Shiraki ,  Masatoshi Kato

IPC分类号： H01L21336

CPC分类号： H01L29/7824 ,  H01L27/0266 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an LDMOS, an n-type region 6, which is formed to have a concentration higher than that of an n-type substrate 1 and whose concentration gradually increases from the n-type substrate 1 to an n+ type drain region 5, is disposed so as to surround the n+-type drain region 5. Further, a p+-type contact region 9 disposed adjacent to an n+-type source region 8 is formed so as to extend below the n+-type source region 8 so that a parasitic transistor formed by the n+-type source region 8, a p-type base region 7 and the n-type substrate 1 is hardly turned ON.

公开(公告)号：US06465839B2

公开(公告)日：2002-10-15

申请号：US09827329

申请日：2001-04-06

申请人： Shigeki Takahashi ,  Hiroaki Himi ,  Satoshi Shiraki ,  Masatoshi Kato

发明人： Shigeki Takahashi ,  Hiroaki Himi ,  Satoshi Shiraki ,  Masatoshi Kato

IPC分类号： H01L29788

CPC分类号： H01L29/7824 ,  H01L27/0266 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/42368 ,  H01L2924/0002 ,  H01L2924/00

摘要： In an LDMOS, an n-type region 6, which is formed to have a concentration higher than that of an n-type substrate 1 and whose concentration gradually increases from the n-type substrate 1 to an n+ type drain region 5, is disposed so as to surround the n+-type drain region 5. Further, a p+-type contact region 9 disposed adjacent to an n+-type source region 8 is formed so as to extend below the n+-type source region 8 so that a parasitic transistor formed by the n+-type source region 8, a p-type base region 7 and the n-type substrate 1 is hardly turned ON.

摘要翻译： 在LDMOS中，设置形成为具有比n型基板1的浓度高且浓度从n型基板1逐渐增加到n +型漏极区域5的n型区域6 以便围绕n +型漏极区域5.此外，与n +型源极区域8相邻配置的p +型接触区域9形成为在n +型源极区域8的下方延伸，使得寄生晶体管 由n +型源极区域8形成，p型基极区域7和n型基板1几乎不导通。

公开(公告)号：US5780324A

公开(公告)日：1998-07-14

申请号：US605637

申请日：1996-02-22

申请人： Norihito Tokura ,  Shigeki Takahashi ,  Tsuyoshi Yamamoto ,  Mitsuhiro Kataoka ,  Kunihiko Hara

发明人： Norihito Tokura ,  Shigeki Takahashi ,  Tsuyoshi Yamamoto ,  Mitsuhiro Kataoka ,  Kunihiko Hara

IPC分类号： H01L21/336 ,  H01L29/04 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L21/332

CPC分类号： H01L29/7813 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/4236

摘要： A manufacturing method of a vertical DMOSFET having a concave channel structure, which does not permit the introduction of defects or contaminant into the channel part and which can make the shape of the groove uniform, is disclosed. On a surface of a (100)-oriented n.sup.- -on-n.sup.+ epitaxial wafer is formed an initial groove by chemical dry etching. The grooved surface is then oxidized by LOCOS technique to form a LOCOS oxide film, whereby the concave structure is formed on the epitaxial wafer. The concave width is set to be at least twice the concave depth, and the sidewall angle is set to be approximately 50.degree. to make the sidewall plane (111) of high channel mobility plane. Following this process, p-type and n-type impurities are diffused from the main surface using the LOCOS oxide film as a double diffusion mask to form a body region and a source region.

摘要翻译： 公开了一种具有凹槽结构的垂直DMOSFET的制造方法，其不允许将缺陷或污染物引入通道部分并且可以使凹槽的形状均匀。 在（100）取向的n-on + n外延晶片的表面上，通过化学干蚀刻形成初始槽。 然后通过LOCOS技术将开槽的表面氧化以形成LOCOS氧化物膜，由此在外延晶片上形成凹形结构。 凹形宽度被设定为凹入深度的至少两倍，并且将侧壁角度设定为大约50°以使高通道迁移面的侧壁平面（111）。 在该过程之后，使用LOCOS氧化物膜作为双扩散掩模，从主表面扩散p型和n型杂质，以形成体区和源区。