公开(公告)号：US07722942B2

公开(公告)日：2010-05-25

申请号：US11401853

申请日：2006-04-12

申请人： Yuuki Tauchi ,  Katsutoshi Takagi ,  Junichi Nakai ,  Toshiki Sato

发明人： Yuuki Tauchi ,  Katsutoshi Takagi ,  Junichi Nakai ,  Toshiki Sato

IPC分类号： B32B3/02

CPC分类号： C22C5/06 ,  C22C1/002 ,  C22C5/08 ,  C23C14/024 ,  C23C14/185 ,  C23C14/205 ,  C23C14/3414 ,  C23C14/584 ,  G02B5/0808 ,  G11B7/252 ,  G11B7/2531 ,  G11B7/257 ,  G11B7/258 ,  G11B7/259 ,  G11B7/266 ,  Y10T428/10 ,  Y10T428/1059 ,  Y10T428/1095 ,  Y10T428/12 ,  Y10T428/12431 ,  Y10T428/12896 ,  Y10T428/12924 ,  Y10T428/21 ,  Y10T428/265 ,  Y10T428/31678

摘要： The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

公开(公告)号：US20100038233A1

公开(公告)日：2010-02-18

申请号：US12604858

申请日：2009-10-23

申请人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Toshiki Sato ,  Hitoshi Matsuzaki ,  Hideo Fujii

发明人： Katsutoshi Takagi ,  Junichi Nakai ,  Yuuki Tauchi ,  Toshiki Sato ,  Hitoshi Matsuzaki ,  Hideo Fujii

IPC分类号： C23C14/34 ,  C21D9/00

CPC分类号： C22C5/06 ,  C23C14/3414

摘要： The sputtering target made of a Ag—Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %−1 or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89 % or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

摘要翻译： 由Ag-Bi基合金制成的溅射靶包含Bi的Bi与Ag的固溶体。 溅射靶的沉积Bi强度为0.01at％-1以下，根据X射线衍射的分析结果通过以下数学式（1）计算，和/或预定强度的面积比（ 8个强度的第三至第六强度）为89％以上，其中，通过根据X射线微量分析计算Bi的特征X射线强度的平面分布来获得面积比：沉淀Bi = [IBi（102） / IAg（111）+ IAg（200）+ IAg（220）+ IAg（311））] / [Bi]。 通过使用溅射靶可以抑制所得膜中Bi含量的产率的显着降低。

公开(公告)号：US20090035602A1

公开(公告)日：2009-02-05

申请号：US11994436

申请日：2007-01-15

申请人： Wataru Urushihara ,  Toshiki Sato ,  Nao Yoshihara

发明人： Wataru Urushihara ,  Toshiki Sato ,  Nao Yoshihara

IPC分类号： B32B15/00 ,  C22C38/18 ,  C22C38/40 ,  C22C38/42

CPC分类号： C25D9/10 ,  B21C37/04 ,  C21D6/002 ,  C21D8/005 ,  C21D9/02 ,  C21D9/32 ,  C22C38/002 ,  C22C38/02 ,  C22C38/04 ,  C22C38/22 ,  C22C38/24 ,  C22C38/28 ,  C22C38/34 ,  Y10S148/908 ,  Y10T428/1266 ,  Y10T428/12972

摘要： A high-strength steel excellent in hydrogen embrittlement resistance is provided. The high-strength steel of the present invention excellent in hydrogen embrittlement resistance has a tensile strength of 1800 N/mm2 or above, contains 0.3 to 0.7% (percent by mass) C, 0.95 to 5.0% Cr, not higher than 0.6% and higher than 0% Mn, and 0.7 to 2.5% Si, and contains at least one of Mg, Ca, Sr, Ba, Li, Na and K so as to meet the following conditions: (1) the upper limits of the Mg, the Ca, the Sr, the Ba, the Li, the Na and the K content are 0.05%, and (2) the Mg, the Ca, the Sr, the Ba, the Li, the Na and the K content meet Expression (1): Cr + Mn 4 ≤ 1000 × [ Ca + Mg + Sr + Ba 2 + Li + Na + K 8 ] ( 1 )

摘要翻译： 提供了耐氢脆性优异的高强度钢。 耐氢脆性优异的本发明的高强度钢的拉伸强度为1800N / mm 2以上，含有0.3〜0.7％（质量％）C，0.95〜5.0％Cr，不高于0.6％， 高于0％的Mn和0.7〜2.5％的Si，并且含有Mg，Ca，Sr，Ba，Li，Na和K中的至少一种，以满足以下条件：（1）Mg， Ca，Sr，Ba，Li，Na和K含量均为0.05％，（2）Mg，Ca，Sr，Ba，Li，Na和K含量均满足表达式 1）：