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    Method for forming semiconductor device
    81.
    发明授权
    Method for forming semiconductor device 有权

    公开(公告)号：US12217971B2

    公开(公告)日：2025-02-04

    申请号：US17391660

    申请日：2021-08-02

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： Ching-Yu Chang ,  Jei-Ming Chen ,  Tze-Liang Lee

    IPC: H01L21/311 ,  H01L21/033 ,  H01L21/768 ,  H01L23/528 ,  H01L21/02 ,  H01L21/8234

    Abstract: A method includes forming a dielectric layer over a substrate; forming a patterned amorphous silicon layer over a dielectric layer; depositing a first spacer layer over the patterned amorphous silicon layer; depositing a second spacer layer over the first spacer layer; forming a photoresist having an opening over the substrate; depositing a hard mask layer in the opening of the photoresist; after depositing the hard mask layer in the opening of the photoresist, removing the photoresist; and performing an etching process to etch the dielectric layer by using the patterned amorphous silicon layer, the first spacer layer, the second spacer layer, and the hard mask layer as an etch mask, in which the etching process etches the second spacer layer at a slower etch rate than etching the first spacer layer.

    PHOTORESIST UNDERLAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    86.
    发明公开
    PHOTORESIST UNDERLAYER AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230393474A1

    公开(公告)日：2023-12-07

    申请号：US18231447

    申请日：2023-08-08

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： An-Ren ZI ,  Ching-Yu Chang

    IPC: G03F7/09 ,  G03F7/039 ,  C08L101/02 ,  G03F7/004 ,  G03F7/26

    CPC classification number: G03F7/094 ,  G03F7/039 ,  C08L101/02 ,  G03F7/0042 ,  G03F7/26

    Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.

    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN
    87.
    发明公开
    PHOTORESIST COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN 审中-公开

    公开(公告)号：US20230384670A1

    公开(公告)日：2023-11-30

    申请号：US18232225

    申请日：2023-08-09

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

    Inventor： An-Ren Zi ,  Ching-Yu Chang

    IPC: G03F7/004 ,  H01L21/027

    CPC classification number: G03F7/0044 ,  H01L21/0274

    Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ═O, —S—, —P—, —PO2, —C(═O)SH, —C(═O)OH, —C(═O)O—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation.

    Filter with seal treatment
    90.
    发明授权
    Filter with seal treatment 有权

    公开(公告)号：US11351509B2

    公开(公告)日：2022-06-07

    申请号：US14338883

    申请日：2014-07-23

    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

    Inventor： Kuan-Hsin Lo ,  Ching-Yu Chang

    IPC: B01D67/00 ,  B01D65/00 ,  B01D69/02 ,  G03F7/16

    Abstract: In accordance with an embodiment, a filter membrane is sealed with a sealing material prior to using the filter membrane to filter process fluids. The sealing material is a fluorine-based polymer or a polymer with a cross-linking group. Once the sealing material has been placed in contact with the filter membrane, a cross-linking reaction may be initiated using either physical or chemical processes to cross-link the sealing material and to seal the filter membrane within the sealing material, thereby separating the filter membrane from the process fluids, reducing or eliminating leaching of the filter membrane into the process fluid.

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