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公开(公告)号:US20200025688A1
公开(公告)日:2020-01-23
申请号:US16587010
申请日:2019-09-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC: G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/94 , G01N21/954
Abstract: A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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公开(公告)号:US20200008290A1
公开(公告)日:2020-01-02
申请号:US16380423
申请日:2019-04-10
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Yen-Shuo SU , Chun-Lin CHANG , Han-Lung CHANG , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.
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公开(公告)号:US20190310556A1
公开(公告)日:2019-10-10
申请号:US16449645
申请日:2019-06-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hsin-Feng CHEN , Han-Lung CHANG , Li-Jui CHEN , Bo-Tsun LIU
Abstract: A method for generating a radiation light in a lithography exposure system is provided. The method includes connecting a first nozzle assembly coupled to a support to an outlet of a storage member that receives a target fuel inside. The method further includes guiding the target fuel flowing through the first nozzle assembly and supplying a droplet of the target fuel into an excitation zone via the first nozzle assembly. The method also includes moving the support to connect a second nozzle assembly coupled to the support with the outlet. In addition, the method includes guiding the target fuel flowing through the second nozzle assembly and supplying a droplet of the target fuel into the excitation zone via the second nozzle assembly. The method further includes irradiating the droplet of the target fuel in the excitation zone with a laser pulse.
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公开(公告)号:US20190104604A1
公开(公告)日:2019-04-04
申请号:US16132990
申请日:2018-09-17
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Shang-Chieh CHIEN , Chi YANG , Jen-Yang CHUNG , Shao-Wei LUO , Tzung-Chi FU , Chun-Kuang CHEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: An extreme ultraviolet (EUV) source includes a collector mirror, a drain, a droplet generator configured to eject a target material toward the drain, a pellicle disposed over the collector mirror. The pellicle is configured to catch debris formed of the target material.
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公开(公告)号:US20190101831A1
公开(公告)日:2019-04-04
申请号:US16029408
申请日:2018-07-06
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Jen-Yang CHUNG , Chieh HSIEH , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.
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公开(公告)号:US20190094717A1
公开(公告)日:2019-03-28
申请号:US16057208
申请日:2018-08-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chi YANG , Ssu-Yu CHEN , Shang-Chieh CHIEN , Chieh HSIEH , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
Abstract: A light source for extreme ultraviolet (EUV) radiation is provided. The light source includes a target droplet generator, a laser generator, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to a source vessel. The laser generator is configured to provide a plurality of first laser pulses according to a control signal to irradiate the target droplets in the source vessel, so as to generate plasma as the EUV radiation. The measuring device is configured to measure process parameters including temperature of the source vessel, droplet positions of the target droplets, and beam sizes and focal points of the first laser pulses. The controller is configured to provide the control signal according to at least two of the process parameters.
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公开(公告)号:US20250102927A1
公开(公告)日:2025-03-27
申请号:US18472779
申请日:2023-09-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chien-Hua FU , Che-Chang HSU , Kai-Fa HO , Li-Jui CHEN
IPC: G03F7/00 , G03F7/20 , H01L21/027 , H01M8/04029 , H01M8/0662 , H01M8/24 , H01M10/44 , H01M16/00
Abstract: A method includes: forming a mask layer on a semiconductor wafer; generating light by a tin droplet by a lithography exposure system; exposing the mask layer by the light; cleaning tin debris accumulated in the lithography exposure system by hydrogen gas; pumping the hydrogen gas from the lithography exposure system to a fuel cell; and generating electric power by the fuel cell.
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公开(公告)号:US20230284366A1
公开(公告)日:2023-09-07
申请号:US18298927
申请日:2023-04-11
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Tai-Yu CHEN , Cho-Ying LIN , Sagar Deepak KHIVSARA , Hsiang CHEN , Chieh HSIEH , Sheng-Kang YU , Shang-Chieh CHIEN , Kai Tak LAM , Li-Jui CHEN , Heng-Hsin LIU , Zhiqiang WU
CPC classification number: H05G2/008 , H05G2/006 , G03F7/7055 , G03F7/7085 , G03F7/70033
Abstract: A light source is provided capable of maintaining the temperature of a collector surface at or below a predetermined temperature. The light source in accordance with various embodiments of the present disclosure includes a processor, a droplet generator for generating a droplet to create extreme ultraviolet light, a collector for reflecting the extreme ultraviolet light into an intermediate focus point, a light generator for generating pre-pulse light and main pulse light, and a thermal image capture device for capturing a thermal image from a reflective surface of the collector.
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公开(公告)号:US20230273534A1
公开(公告)日:2023-08-31
申请号:US18311795
申请日:2023-05-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chieh HSIEH , Tai-Yu CHEN , Cho-Ying LIN , Heng-Hsin LIU , Li-Jui CHEN , Shang-Chieh CHIEN
CPC classification number: G03F7/70925 , G03F7/70033 , G02B17/0663 , G03F7/70491 , H05G2/008 , G03F7/70808
Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.
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公开(公告)号:US20230060899A1
公开(公告)日:2023-03-02
申请号:US17461744
申请日:2021-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chieh HSIEH , Tai-Yu CHEN , Cho-Ying LIN , Shang-Chieh CHIEN , Li-Jui CHEN , Heng-Hsin LIU
Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.
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