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677 条记录 (耗时 0.044 秒)

    Ferroelectric capacitor and a method for manufacturing thereof
    81.
    发明授权
    Ferroelectric capacitor and a method for manufacturing thereof 失效

    公开(公告)号：US06229168B1

    公开(公告)日：2001-05-08

    申请号：US09435935

    申请日：1999-11-09

    申请人： Takashi Nakamura

    发明人： Takashi Nakamura

    IPC分类号： H01L2976

    CPC分类号： H01L27/11502 ,  H01G4/008 ,  H01G4/228 ,  H01G4/33 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/60 ,  H01L28/65 ,  H01L28/75

    摘要： It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer 8.

    Metal ferroelectric silicon field effect transistor memory
    83.
    发明授权
    Metal ferroelectric silicon field effect transistor memory 失效
    金属铁电硅场效应晶体管存储器

    公开(公告)号：US06128212A

    公开(公告)日：2000-10-03

    申请号：US069214

    申请日：1998-04-29

    申请人： Takashi Nakamura ,  Yuichi Nakao

    发明人： Takashi Nakamura ,  Yuichi Nakao

    IPC分类号： H01L21/8247 ,  G11C11/22 ,  H01L21/8246 ,  H01L27/105 ,  H01L29/788 ,  H01L29/792

    CPC分类号： G11C11/22

    摘要： On the surface of a semiconductor substrate between a source region and a drain region formed on the semiconductor substrate, an insulating layer, a conductive thin film used as a floating electrode, a ferroelectric thin film and a conductive thin film used as a control electrode are successively formed. Writing or erasing is performed by causing a potential difference between the control electrode and the semiconductor substrate to reverse the polarization of the ferroelectric thin film.

    摘要翻译： 在形成于半导体基板上的源极区域与漏极区域之间的半导体衬底的表面上，使用绝缘层，用作浮动电极的导电薄膜，铁电薄膜和用作控制电极的导电薄膜， 先后形成。 通过使控制电极和半导体衬底之间的电位差反转铁电薄膜的极化来进行写入或擦除。

    Ferroelectric memory device and a method of manufacturing thereof
    85.
    发明授权
    Ferroelectric memory device and a method of manufacturing thereof 有权
    铁电存储器件及其制造方法

    公开(公告)号：US6097058A

    公开(公告)日：2000-08-01

    申请号：US235714

    申请日：1999-01-22

    申请人： Takashi Nakamura ,  Yoshikazu Fujimori

    发明人： Takashi Nakamura ,  Yoshikazu Fujimori

    IPC分类号： H01L21/8247 ,  H01B3/12 ,  H01L21/8246 ,  H01L27/10 ,  H01L27/105 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792

    CPC分类号： H01L29/78391

    摘要： A ferroelectric layer having a low dielectric constant which is used for a ferroelectric memory element is provided. Also, the ferroelectric layer having a high melting point used for the ferroelectric memory element is provided. An FET 20 has a stacked structure including a gate oxidation layer 24, a floating gate 26, a ferroelectric layer 28, and a control gate 30 deposited on a channel region CH in that order, the channel region CH being formed in a semiconductor substrate 22 made of silicon. The ferroelectric layer 28 consists of a thin film made of a mixed crystal composed of Sr.sub.2 (Ta.sub.1-x Nb.sub.x).sub.2 O.sub.7. The crystal structure of both Sr.sub.2 Nb.sub.2 O.sub.7 and Sr.sub.2 Ta.sub.2 O.sub.7 is pyramid quadratic structure, and their lattice constants are similar to each other. Their relative dielectric constants are low, and their melting points are high. Curie temperature related with their ferroelectricity is, however, too high in Sr.sub.2 Nb.sub.2 O.sub.7 and too low in Sr.sub.2 Ta.sub.2 O.sub.7. In order to overcome the discrepancies, the ferroelectric layer 28 having desired curie temperature is formed with a mixed crystal made of Sr.sub.2 (Ta.sub.1-x Nbx).sub.2 O.sub.7.

    摘要翻译： 提供了用于铁电存储元件的具有低介电常数的铁电层。 此外，提供了用于铁电存储元件的具有高熔点的铁电层。 FET20具有堆叠结构，该层叠结构包括依次形成在沟道区CH上的栅氧化层24，浮栅26，强电介质层28和控制栅极30，沟道区CH形成在半导体衬底22中 由硅制成 铁电层28由由Sr2（Ta1-xNbx）2O7构成的混合晶体构成的薄膜构成。 Sr2Nb2O7和Sr2Ta2O7的晶体结构是金字塔二次结构，其晶格常数相似。 它们的相对介电常数低，熔点高。 然而，与Sr2Nb2O7相比，其与铁电相关的居里温度太高，Sr2Ta2O7过低。 为了克服差异，具有希望的居里温度的铁电体层28由Sr2（Ta1-xNbx）2O7制成的混合晶体形成。

    Method for execution of program steps by a remote CPU in a computer network
    88.
    发明授权
    Method for execution of program steps by a remote CPU in a computer network 失效
    由计算机网络中的远程CPU执行程序步骤的方法

    公开(公告)号：US5918011A

    公开(公告)日：1999-06-29

    申请号：US898558

    申请日：1997-07-22

    申请人： Hitoshi Watanabe ,  Tsuneaki Kadosawa ,  Takashi Nakamura ,  Eiji Koga ,  Satoshi Asada

    发明人： Hitoshi Watanabe ,  Tsuneaki Kadosawa ,  Takashi Nakamura ,  Eiji Koga ,  Satoshi Asada

    IPC分类号： G06F13/00 ,  G06F9/48 ,  G06F15/16 ,  G06F15/177

    CPC分类号： G06F9/4843

    摘要： Each CPU registers jobs of its own in the form of nodes in a normal node queue, executes the registered jobs in a registration order, has a queue (remote node queue) for registering a job requested by another CPU in the form of a node, and executes the remote nodes in a registration order as in the normal nodes. When the first CPU causes the second CPU to execute a job, the first CPU transmits the job in the form of a node processed by the second CPU. The second CPU registers the received node in the remote node queue and executes it as in the normal node. The second CPU sends back, to the first CPU, the processing result of the received node in the form of a node processed by the first CPU, as needed.

    摘要翻译： 每个CPU以普通节点队列中的节点的形式注册自己的作业，以注册顺序执行注册的作业，具有用于以节点的形式注册由另一CPU请求的作业的队列（远程节点队列） 并按照正常节点中的注册顺序执行远程节点。 当第一CPU使第二CPU执行作业时，第一CPU以第二CPU处理的节点的形式发送作业。 第二个CPU将接收到的节点注册到远程节点队列中，并像普通节点那样执行。 第二CPU根据需要以第一CPU处理的节点的形式向第一CPU发回接收节点的处理结果。

    Information processing apparatus and method and computer usable medium for storing an input character train in correspondence to a figure object to which the character train is instructed to be pasted
    89.
    发明授权
    Information processing apparatus and method and computer usable medium for storing an input character train in correspondence to a figure object to which the character train is instructed to be pasted 失效
    信息处理装置和方法以及计算机可用介质，用于存储与指定了该字符串的图形对象相对应的输入字符串

    公开(公告)号：US5897647A

    公开(公告)日：1999-04-27

    申请号：US568517

    申请日：1995-12-07

    申请人： Tsuneaki Kadosawa ,  Takashi Nakamura ,  Hitoshi Watanabe ,  Satoshi Asada ,  Yasuyuki Ogawa

    发明人： Tsuneaki Kadosawa ,  Takashi Nakamura ,  Hitoshi Watanabe ,  Satoshi Asada ,  Yasuyuki Ogawa

    IPC分类号： G06F9/06 ,  G06F17/24 ,  G06T1/00 ,  G06F15/403

    CPC分类号： G06F17/24

    摘要： An information processing method and apparatus includes elements and steps to rapid figure editing and its execution environment by quickly executing a program and a file from a diagram showing a flow of the program and file. According to the invention, a rectangular figure object in which a line width is set to "0.2 mm", a line type is set to "solid line", and a line color is set to "black" and which is filled by a pattern of a "diagonal-1" of "red" is pasted to a drawing sheet by using a mouse or the like by the user. After a character attribute "dir" was pasted to the rectangular object by using a keyboard, for example, when an instruction to point the rectangular object by using the mouse or the like or to depress a button of the mouse while depressing a control key of the keyboard, or the like is performed, a command interpreter stored in a memory device is activated by a CPU, the character attribute "dir" of the rectangular object is read out, the characters "dir" are sent to the activated command interpreter, and the computer command "dir" is executed, so that the above object can be accomplished.

    摘要翻译： 信息处理方法和装置包括通过从示出程序和文件的流程的图快速执行程序和文件来快速图形编辑及其执行环境的元件和步骤。 根据本发明，将线宽设定为“0.2mm”的矩形图形对象，将线条类型设定为“实线”，将线条颜色设定为“黑色”，由图案填充 “红色”的“对角线1”通过使用者的鼠标等粘贴到图纸上。 在使用键盘将字符属性“dir”粘贴到矩形对象之后，例如，当使用鼠标等指示矩形对象的指令或者在按下鼠标的按钮的同时按下控制键 执行键盘等，由CPU激活存储在存储装置中的命令解释器，读出矩形对象的字符属性“dir”，将字符“dir”发送到激活的命令解释器， 并且执行计算机命令“dir”，从而可以实现上述目的。