公开(公告)号：US09985020B2

公开(公告)日：2018-05-29

申请号：US14932993

申请日：2015-11-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Yi-Kuan Wu ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L21/02 ,  H01L27/088 ,  H01L29/66 ,  H01L21/31 ,  H01L21/311 ,  H01L21/285 ,  H01L29/417 ,  H01L29/165

CPC classification number: H01L27/088 ,  H01L21/02521 ,  H01L21/28518 ,  H01L21/28568 ,  H01L21/31 ,  H01L21/31116 ,  H01L29/165 ,  H01L29/41725 ,  H01L29/41766 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66643 ,  H01L29/66969

Abstract: A manufacturing method of a semiconductor structure includes the following steps. An epitaxial region is formed in a semiconductor substrate. A dielectric layer is formed on the epitaxial region, and a contact hole is formed in the dielectric layer. The contact hole exposes a part of the epitaxial region, and an oxide-containing layer is formed on the epitaxial region exposed by the contact hole. A contact structure is formed in the contact hole and on the oxide-containing layer. The oxide-containing layer is located between the contact structure and the epitaxial region. A semiconductor structure includes the semiconductor substrate, at least one epitaxial region, the contact structure, the oxide-containing layer, and a silicide layer. The contact structure is disposed on the epitaxial region. The oxide-containing layer is disposed between the epitaxial region and the contact structure. The silicide layer is disposed between the oxide-containing layer and the contact structure.

公开(公告)号：US09941215B2

公开(公告)日：2018-04-10

申请号：US15285471

申请日：2016-10-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Chih-Sen Huang

IPC: H01L29/66 ,  H01L23/535 ,  H01L23/528 ,  H01L27/092 ,  H01L21/768 ,  H01L21/8238

CPC classification number: H01L23/535 ,  H01L21/76805 ,  H01L21/76829 ,  H01L21/76895 ,  H01L21/823871 ,  H01L23/485 ,  H01L23/528 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L27/092 ,  H01L29/66545

Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a first gate structure is formed on the substrate, a first spacer is formed around the first gate structure, and an interlayer dielectric (ILD) layer is formed around the first spacer. Next, a first etching process is performed to remove part of the ILD layer for forming a recess, a second etching process is performed to remove part of the first spacer for expanding the recess, and a contact plug is formed in the recess.

公开(公告)号：US09831133B2

公开(公告)日：2017-11-28

申请号：US15352605

申请日：2016-11-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chao-Hung Lin ,  Chih-Kai Hsu ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Chien-Ting Lin ,  Jyh-Shyang Jenq ,  Ching-Wen Hung ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Yi-Kuan Wu ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L21/00 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/511 ,  H01L29/517

Abstract: A method for manufacturing semiconductor devices having metal gate includes follow steps. A substrate including a plurality of isolation structures is provided. A first nFET device and a second nFET device are formed on the substrate. The first nFET device includes a first gate trench and the second nFET includes a second gate trench. A third bottom barrier layer is formed in the first gate trench and a third p-work function metal layer is formed in the second gate trench, simultaneously. The third bottom barrier layer and the third p-work function metal layer include a same material. An n-work function metal layer is formed in the first gate trench and the second gate trench. The n-work function metal layer in the first gate trench directly contacts the third bottom barrier layer, and the n-work function metal layer in the second gate trench directly contacts the third p-work function metal layer.

公开(公告)号：US09685337B2

公开(公告)日：2017-06-20

申请号：US15243986

申请日：2016-08-23

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ching-Wen Hung ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Chih-Sen Huang ,  Chun-Hsien Lin

IPC: H01L29/94 ,  H01L21/28 ,  H01L29/66 ,  H01L21/285 ,  H01L21/768 ,  H01L29/78 ,  H01L29/06 ,  H01L29/49

CPC classification number: H01L21/28123 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/76805 ,  H01L21/76834 ,  H01L21/76837 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76883 ,  H01L21/76895 ,  H01L21/76897 ,  H01L29/0653 ,  H01L29/4966 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of : providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate.

公开(公告)号：US20170062282A1

公开(公告)日：2017-03-02

申请号：US15352605

申请日：2016-11-16

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chao-Hung Lin ,  Chih-Kai Hsu ,  Li-Wei Feng ,  Shih-Hung Tsai ,  Chien-Ting Lin ,  Jyh-Shyang Jenq ,  Ching-Wen Hung ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Ying-Cheng Liu ,  Yi-Kuan Wu ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L21/8238 ,  H01L21/28

CPC classification number: H01L21/823842 ,  H01L21/28088 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/511 ,  H01L29/517

Abstract: A method for manufacturing semiconductor devices having metal gate includes follow steps. A substrate including a plurality of isolation structures is provided. A first nFET device and a second nFET device are formed on the substrate. The first nFET device includes a first gate trench and the second nFET includes a second gate trench. A third bottom barrier layer is formed in the first gate trench and a third p-work function metal layer is formed in the second gate trench, simultaneously. The third bottom barrier layer and the third p-work function metal layer include a same material. An n-work function metal layer is formed in the first gate trench and the second gate trench. The n-work function metal layer in the first gate trench directly contacts the third bottom barrier layer, and the n-work function metal layer in the second gate trench directly contacts the third p-work function metal layer.

Abstract translation: 具有金属栅极的半导体器件的制造方法包括以下步骤。 提供了包括多个隔离结构的基板。 第一nFET器件和第二nFET器件形成在衬底上。 第一nFET器件包括第一栅极沟槽，第二nFET包括第二栅极沟槽。 在第一栅极沟槽中形成第三底部阻挡层，同时在第二栅极沟槽中形成第三p功函数金属层。 第三底部阻挡层和第三p功函数金属层包括相同的材料。 在第一栅极沟槽和第二栅极沟槽中形成n功函数金属层。 第一栅极沟槽中的n功函数金属层直接接触第三底部势垒层，并且第二栅极沟槽中的n功函数金属层直接接触第三p功函数金属层。

公开(公告)号：US20160225662A1

公开(公告)日：2016-08-04

申请号：US14612235

申请日：2015-02-02

Applicant: United Microelectronics Corp.

Inventor： Chia-Lin Lu ,  Chun-Lung Chen ,  Feng-Yi Chang ,  Ching-Wen Hung ,  Jia-Rong Wu ,  Yi-Hui Lee ,  Yi-Kuan Wu ,  Ying-Cheng Liu ,  Chih-Sen Huang ,  Yi-Wei Chen

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/76816 ,  H01L21/76879

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a dielectric layer on the ILD layer and the gate structure; forming an opening in the dielectric layer and the ILD layer; forming an organic dielectric layer (ODL) on the dielectric layer and in the opening; removing part of the ODL; removing part of the dielectric layer for extending the opening; removing the remaining ODL; and forming a contact plug in the opening.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有栅极结构的衬底和围绕栅极结构的层间电介质（ILD）层; 在ILD层和栅极结构上形成介电层; 在介电层和ILD层中形成开口; 在介质层和开口中形成有机介电层（ODL）; 去除部分ODL; 去除用于延伸开口的电介质层的一部分; 去除剩余的ODL; 并在开口中形成接触塞。