公开(公告)号：US08278181B2

公开(公告)日：2012-10-02

申请号：US13280397

申请日：2011-10-25

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/20 ,  H01L21/00

CPC分类号： H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A method for manufacturing a semiconductor device including a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.

摘要翻译： 一种制造半导体器件的方法，所述半导体器件包括形成在半导体衬底上的强电介质电容器，其中所述强电介质电容器包括下电极，形成在所述下电极上的铁电膜和形成在所述强电介质膜上的上电极，所述上电极包括 由第一导电贵金属氧化物形成的第一导电膜和形成在第一导电膜上的金属氮化物形成的第二导电膜。

公开(公告)号：US20120171785A1

公开(公告)日：2012-07-05

申请号：US13417811

申请日：2012-03-12

申请人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

发明人： Tomohiro Takamatsu ,  Junichi Watanabe ,  Ko Nakamura ,  Wensheng Wang ,  Naoyuki Sato ,  Aki Dote ,  Kenji Nomura ,  Yoshimasa Horii ,  Masaki Kurasawa ,  Kazuaki Takai

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L21/31691 ,  H01L28/56

摘要： There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode.

摘要翻译： 提供一种形成在粘合剂层上的电容器下电极，其表面粗糙度为0.79nm或更小，并且具有从垂直于衬底上表面的垂直方向倾斜2.3°或更小的（111）取向， 具有（111）取向从基板的垂直方向倾斜3.5°以下的结构的铁电体层和电容器上电极。

公开(公告)号：US20120034712A1

公开(公告)日：2012-02-09

申请号：US13280397

申请日：2011-10-25

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L43/12

CPC分类号： H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A method for manufacturing a semiconductor device including a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.

摘要翻译： 一种制造半导体器件的方法，所述半导体器件包括形成在半导体衬底上的强电介质电容器，其中所述强电介质电容器包括下电极，形成在所述下电极上的铁电膜和形成在所述强电介质膜上的上电极，所述上电极包括 由第一导电贵金属氧化物形成的第一导电膜和形成在第一导电膜上的金属氮化物形成的第二导电膜。

公开(公告)号：US08093071B2

公开(公告)日：2012-01-10

申请号：US12539694

申请日：2009-08-12

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/00

CPC分类号： H01L28/65 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/3146 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/32051 ,  H01L21/76826 ,  H01L21/76841 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56

摘要： According to the present invention, a method of fabricating a semiconductor device is provided including forming a first interlayer insulating film 11, a crystalline conductive film 21, a first conductive film 23, a ferroelectric film 24 and a second conductive film 25 on a silicon substrate 1 in sequence, forming a conductive cover film 18 on the second conductive film 25, forming a hard mask 26a on the conductive cover film 18, forming a capacitor upon etching the conductive cover film 18, the second conductive film 25, the ferroelectric film 24 and the first conductive film 23 using the hard mask 26a as an etching mask in areas exposed from the hard mask 26a, and etching the hard mask 26a and the crystalline conductive film 21 exposed from the lower electrode 23a using an etching condition under which the hard mask 26a is etched.

摘要翻译： 根据本发明，提供一种制造半导体器件的方法，包括在硅衬底上形成第一层间绝缘膜11，结晶导电膜21，第一导电膜23，强电介质膜24和第二导电膜25 在第二导电膜25上形成导电覆盖膜18，在导电覆盖膜18上形成硬掩模26a，在蚀刻导电覆盖膜18，第二导电膜25，强电介质膜24上形成电容器 以及在从硬掩模26a暴露的区域中使用硬掩模26a作为蚀刻掩模的第一导电膜23，并且使用蚀刻条件来蚀刻从下电极23a暴露的硬掩模26a和结晶导电膜21， 掩模26a被蚀刻。

公开(公告)号：US20110210424A1

公开(公告)日：2011-09-01

申请号：US13106286

申请日：2011-05-12

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/92 ,  H01L21/02

CPC分类号： H01L21/76832 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76829 ,  H01L24/05 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/75 ,  H01L2224/02126 ,  H01L2224/02166 ,  H01L2224/05624 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/01029 ,  H01L2924/00

摘要： Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.

摘要翻译： 铁电电容器（42）形成在半导体衬底（10）上，然后形成直接覆盖铁电电容器（42）的阻挡膜（46）。 之后，形成与强电介质电容器（42）连接的配线（56a等）。 此外，在高于布线（56a等）的位置处形成阻挡膜（58）。 在形成阻挡膜（46）时，形成膜堆叠，膜叠层包括至少两种具有不同成分的防扩散膜（46a和46b），并防止氢或水的扩散。

公开(公告)号：US20110204479A1

公开(公告)日：2011-08-25

申请号：US13100511

申请日：2011-05-04

申请人： Wensheng Wang ,  Yoshimasa Horii

发明人： Wensheng Wang ,  Yoshimasa Horii

IPC分类号： H01L29/02

CPC分类号： H01L27/0629 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/65

摘要： The present invention provides a method for manufacturing a semiconductor device, including the steps of: forming a first ferroelectric film on a first conductive film by a film-forming method including at least a step of forming a film by a sol-gel method; forming a second ferroelectric film on the first ferroelectric film by a sputtering method; forming a second conductive film on the second ferroelectric film; and forming a capacitor provided with a lower electrode, a capacitor dielectric film and an upper electrode by patterning the first conductive film, the first and second ferroelectric films and the second conductive film.

摘要翻译： 本发明提供一种制造半导体器件的方法，包括以下步骤：通过至少包括通过溶胶 - 凝胶法形成膜的步骤的成膜方法在第一导电膜上形成第一强电介质膜; 通过溅射法在第一铁电体膜上形成第二铁电体膜; 在所述第二铁电体膜上形成第二导电膜; 以及通过对第一导电膜，第一和第二铁电体膜和第二导电膜进行构图来形成设置有下电极，电容器电介质膜和上电极的电容器。

公开(公告)号：US07964904B2

公开(公告)日：2011-06-21

申请号：US12239332

申请日：2008-09-26

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L29/92

CPC分类号： H01L28/65 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/56

摘要： An FeRAM is produced by a method including the steps of forming a lower electrode layer (24), forming a first ferroelectric film (25a) on the lower electrode layer (24), forming on the first ferroelectric film (25a) a second ferroelectric film (25b) in an amorphous state containing iridium inside, thermally treating the second ferroelectric film (25b) in an oxidizing atmosphere to crystallize the second ferroelectric film (25b) and to cause iridium in the second ferroelectric film (25b) to diffuse into the first ferroelectric film (25a), forming an upper electrode layer (26) on the second ferroelectric film (25b), and processing each of the upper electrode layer (26), the second ferroelectric film (25b), the first ferroelectric film (25a), and the lower electrode layer (24) to form the capacitor structure. With such a structure, the inversion charge amount in a ferroelectric capacitor structure (30) is improved without increasing the leak current pointlessly, and a high yield can be assured, thereby realizing a highly reliable FeRAM.

摘要翻译： 通过以下方法制造FeRAM：在下电极层（24）上形成第一铁电体膜（25a）的下部电极层（24），在第一铁电体膜（25a）上形成第二铁电体膜 （25b），其中含有铱的非晶状态，在氧化气氛中对所述第二铁电体膜（25b）进行热处理，使所述第二铁电体膜（25b）结晶，并使所述第二铁电体膜（25b）中的铱扩散到所述第一铁电体膜 在第二铁电体膜（25b）上形成上电极层（26）的铁电体膜（25a），上电极层（26），第二铁电体膜（25b），第一铁电体膜（25a） 和下电极层（24），以形成电容器结构。 通过这样的结构，能够提高铁电电容器结构（30）中的反转电荷量，而不会无意地增加泄漏电流，可以确保高产率，从而实现高可靠性的FeRAM。

公开(公告)号：US07939347B2

公开(公告)日：2011-05-10

申请号：US12548838

申请日：2009-08-27

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L21/20

CPC分类号： H01L21/31691 ,  H01L27/11507 ,  H01L28/55

摘要： A semiconductor device manufacturing method includes forming a first film made of a first metal to an upper portion of a substrate, forming a second film made of an amorphous metal oxide or an microcrystalline metal oxide on the first film, subjecting the second film to a heat treatment, subjecting the second film after the heat treatment to a reduction treatment, forming a third film made of a ferroelectric material on the second film, and forming a fourth film made of a second metal on the third film.

摘要翻译： 半导体器件制造方法包括：将由第一金属制成的第一膜形成在基板的上部，在第一膜上形成由非晶态金属氧化物或微晶金属氧化物构成的第二膜，对第二膜进行热处理 处理后，在热处理后对第二膜进行还原处理，在第二膜上形成由铁电体材料制成的第三膜，在第三膜上形成由第二金属制成的第四膜。

公开(公告)号：US07927891B2

公开(公告)日：2011-04-19

申请号：US12647937

申请日：2009-12-28

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/00

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： A lower electrode film is formed above a semiconductor substrate first, and then a ferroelectric film is formed on the lower electrode film. After that, an upper electrode film is formed on the ferroelectric film. When forming the upper electrode, an IrOx film containing crystallized small crystals when formed is formed on the ferroelectric film first, and then an IrOx film containing columnar crystals is formed.

摘要翻译： 首先在半导体基板的上方形成下电极膜，然后在下电极膜上形成铁电体膜。 之后，在铁电体膜上形成上部电极膜。 当形成上电极时，首先在铁电体膜上形成含有结晶化的小晶体的IrOx膜，然后形成含有柱状晶体的IrOx膜。

公开(公告)号：US20100255611A1

公开(公告)日：2010-10-07

申请号：US12818279

申请日：2010-06-18

申请人： Wensheng Wang

发明人： Wensheng Wang

IPC分类号： H01L21/02

CPC分类号： H01L21/7687 ,  H01L21/2855 ,  H01L21/32051 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76856 ,  H01L28/55 ,  H01L28/65 ,  H01L2221/1078

摘要： The present invention provides a semiconductor device which is characterized as follows. The semiconductor device includes: an interlayer insulating film formed above a semiconductor substrate and provided with a hole above an impurity diffusion region; a conductive plug formed in the hole and electrically connected to the impurity diffusion region; a conductive oxygen barrier film formed on the conductive plug and the interlayer insulating film around the conductive plug; a conductive anti-diffusion film formed on the conductive oxygen barrier film; and a capacitor that has a lower electrode which is formed on the conductive anti-diffusion film and which exposes platinum or palladium on the upper surface, a capacitor dielectric film made of a ferroelectric material, and an upper electrode. The conductive anti-diffusion film is made of a non-oxide conductive material for preventing the diffusion of the constituent element of the capacitor dielectric film.

摘要翻译： 本发明提供一种半导体器件，其特征如下。 半导体器件包括：形成在半导体衬底之上并在杂质扩散区上方设置有空穴的层间绝缘膜; 导电插塞，其形成在所述孔中并电连接到所述杂质扩散区; 形成在所述导电插塞和所述导电插塞周围的所述层间绝缘膜上的导电氧阻隔膜; 形成在导电氧阻隔膜上的导电性防扩散膜; 以及电容器，其具有形成在导电性防扩散膜上并在上表面露出铂或钯的下部电极，由铁电体材料制成的电容器电介质膜和上部电极。 导电性防扩散膜由防止电容电介质膜的构成元素扩散的非氧化物导电材料构成。