公开(公告)号：US07837903B2

公开(公告)日：2010-11-23

申请号：US12331794

申请日：2008-12-10

申请人： Ping Liu ,  Yiliang Wu ,  Yuning Li

发明人： Ping Liu ,  Yiliang Wu ,  Yuning Li

IPC分类号： H01B1/12

CPC分类号： H01B1/127 ,  C08G61/126 ,  C08G2261/1412 ,  C08G2261/364 ,  C08G2261/51 ,  C08G2261/92 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0558

摘要： Disclosed are semiconducting polythiophenes comprising a repeating unit of Formula (A) or a copolythiophene of Formula (B): wherein A and B are each alkyl having from 1 to about 25 carbon atoms; and a, b, c, d, e, f, g, x, and y are as defined herein. These polythiophenes have high mobility and are soluble in common organic solvents, so that chlorinated solvents do not need to be used. They are useful for depositing semiconducting layers, particularly in organic thin-film transistors.

摘要翻译： 公开了包含式（A）的重复单元或式（B）的共聚噻吩的半导体聚噻吩：其中A和B各自为具有1至约25个碳原子的烷基; 和a，b，c，d，e，f，g，x和y如本文所定义。 这些聚噻吩具有高迁移率并且可溶于普通有机溶剂，因此不需要使用氯化溶剂。 它们对于沉积半导体层是有用的，特别是在有机薄膜晶体管中。

公开(公告)号：US20100230670A1

公开(公告)日：2010-09-16

申请号：US12791928

申请日：2010-06-02

申请人： Yuning Li ,  Beng S. Ong ,  Yiliang Wu ,  Ping Liu

发明人： Yuning Li ,  Beng S. Ong ,  Yiliang Wu ,  Ping Liu

IPC分类号： H01L51/30 ,  C07D487/02

CPC分类号： C08G61/124 ,  C08G61/126

摘要： An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.

摘要翻译： 包括包含至少一种类型的任选取代的吲哚咔唑部分和至少一种二价键的化合物的电子器件。

公开(公告)号：US07795373B2

公开(公告)日：2010-09-14

申请号：US11399091

申请日：2006-04-06

申请人： Yuning Li ,  Beng S. Ong ,  Yiliang Wu

发明人： Yuning Li ,  Beng S. Ong ,  Yiliang Wu

IPC分类号： C08G75/00 ,  C08G65/00

CPC分类号： C08G61/126 ,  C08G61/02 ,  H01L51/0038 ,  H01L51/0043 ,  H01L51/0558

摘要： A polymer of Formula or structure (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteratom containing group, or a halogen; Ar and Ar′ represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.

摘要翻译： 式（I）的聚合物，其中R 1和R 2中的至少一个是合适的烃，氢，含杂原子的基团或卤素; Ar和Ar'表示芳族部分; x，y，a，b，c，d，e，f和g分别表示基团或环的数目; n表示重复单元的数量。

公开(公告)号：US20100226811A1

公开(公告)日：2010-09-09

申请号：US12398627

申请日：2009-03-05

申请人： Yiliang Wu ,  Mahya Mokhtari

发明人： Yiliang Wu ,  Mahya Mokhtari

IPC分类号： B22F3/24 ,  B22F1/00

CPC分类号： H01L51/102 ,  B22F3/24 ,  B22F7/06 ,  B22F2003/241 ,  B22F2998/00 ,  B22F2999/00 ,  B82Y30/00 ,  H01L51/0021 ,  H01L51/0541 ,  H01L51/0545 ,  B22F1/0022 ,  B22F2202/13

摘要： A process comprising: (a) forming a feature comprising uncoalesced silver-containing nanoparticles; (b) heating the uncoalesced silver-containing nanoparticles to form coalesced silver-containing nanoparticles; and (c) subjecting to a plasma treatment the uncoalesced silver-containing nanoparticles or the coalesced silver-containing nanoparticles, or both the uncoalesced silver-containing nanoparticles and the coalesced silver-containing nanoparticles, wherein the feature prior to the action (c) exhibits a low electrical conductivity but the electrical conductivity of the feature subsequent to the actions (b) and (c) is increased by at least about 100 times, wherein the action (c) is undertaken during one or more of prior to the heating, or during the heating, or after the heating.

摘要翻译： 一种方法，包括：（a）形成包含未聚合的含银纳米颗粒的特征; （b）加热未收缩的含银纳米颗粒以形成聚结的含银纳米颗粒; 并且（c）对未沉积的含银纳米颗粒或聚结的含银纳米颗粒或未结合的含银纳米颗粒和聚结的含银纳米颗粒进行等离子体处理，其中在作用（c）之前的特征表现出 动作（b）和（c）之后的特征的导电性降低至少约100倍，其中动作（c）在加热之前的一个或多个期间进行，或 在加热期间或加热后。

公开(公告)号：US07781564B2

公开(公告)日：2010-08-24

申请号：US11565751

申请日：2006-12-01

申请人： Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

发明人： Beng S. Ong ,  Ping Liu ,  Yiliang Wu ,  Yu Qi

IPC分类号： C08G75/06 ,  H01L35/24 ,  H01L51/40

CPC分类号： H01B1/127 ,  C08G61/126 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent linkage, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent linkages D is 0 or 1.

摘要翻译： 聚噻吩，其中单体链段含有其中A是侧链; B是氢或侧链; 和D是二价键，其中单体链段中的A取代的亚噻吩基单元（I）的数目为约1至约10，B-取代的亚噻吩基单元（II）的数目为0至约5， 并且二价键D的数目为0或1。

公开(公告)号：US20100121004A1

公开(公告)日：2010-05-13

申请号：US12270088

申请日：2008-11-13

申请人： Yuning Li ,  Ping Liu ,  Yiliang Wu

发明人： Yuning Li ,  Ping Liu ,  Yiliang Wu

IPC分类号： C08F4/26 ,  C07D333/50 ,  C08F28/06

CPC分类号： C07D333/50 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1424 ,  C08G2261/3223 ,  C08G2261/3243 ,  C08G2261/43 ,  C08G2261/51 ,  C08G2261/92 ,  H01L51/0025

摘要： Disclosed is a process for purifying monomers of Formula (II): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen; and R′ is selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen. After the monomer is synthesized, it is purified by column chromatography using neutral alumina and hexane as an eluent. The resulting product can also be further recrystallized using isopropanol, hexane, heptane, or toluene. Polymers formed from the purified monomer exhibit higher mobility and increased reproducibility of the mobility.

摘要翻译： 公开了一种纯化式（II）单体的方法：其中R 1和R 2独立地选自烷基，取代的烷基，芳基，取代的芳基，烷氧基，取代的烷氧基和卤素; 并且R'选自氢，烷基，取代的烷基，芳基，取代的芳基，烷氧基，取代的烷氧基和卤素。 合成单体后，通过柱色谱纯化，使用中性氧化铝和己烷作为洗脱剂。 所得产物还可以使用异丙醇，己烷，庚烷或甲苯进一步重结晶。 由纯化单体形成的聚合物表现出更高的迁移率和增加迁移率的再现性。

公开(公告)号：US07705111B2

公开(公告)日：2010-04-27

申请号：US11399246

申请日：2006-04-06

申请人： Beng S. Ong ,  Yuning Li ,  Yiliang Wu

发明人： Beng S. Ong ,  Yuning Li ,  Yiliang Wu

IPC分类号： C08G75/00

CPC分类号： C08G61/126 ,  H01L51/0036 ,  H01L51/0558

摘要： A polymer of the following formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.

摘要翻译： 下式的聚合物其中R是合适的烃或含杂原子的基团; n表示重复单元的数量。

公开(公告)号：US20100090200A1

公开(公告)日：2010-04-15

申请号：US12250691

申请日：2008-10-14

申请人： Yiliang Wu ,  Ping Liu ,  Yuning Li ,  Paul F. Smith

发明人： Yiliang Wu ,  Ping Liu ,  Yuning Li ,  Paul F. Smith

IPC分类号： H01L51/05

CPC分类号： H01L51/0529 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0541 ,  H01L51/0545

摘要： Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (1): where R′ is alkyl having from about 1 to about 24 carbon atoms; R″ is alkyl having from about 1 to about 24 carbon atoms, halogen, alkoxy, hydroxyl, or amino; L is halogen, oxygen, alkoxy, hydroxyl, or amino; k is 1 or 2; and m is 1 or 2.

摘要翻译： 公开了具有改进的移动性的有机薄膜晶体管。 晶体管在介电层和半导体层之间包含两个界面层。 一个界面层由硅氧烷聚合物或倍半硅氧烷聚合物形成。 另一界面层由式（1）的含烷基的硅烷形成：其中R'为具有约1至约24个碳原子的烷基; R“是具有约1至约24个碳原子的烷基，卤素，烷氧基，羟基或氨基; L是卤素，氧，烷氧基，羟基或氨基; k为1或2; m为1或2。

公开(公告)号：US20090274834A1

公开(公告)日：2009-11-05

申请号：US12113628

申请日：2008-05-01

申请人： Naveen Chopra ,  Yiliang Wu ,  Peter M. Kazmaier

发明人： Naveen Chopra ,  Yiliang Wu ,  Peter M. Kazmaier

IPC分类号： B05D5/12 ,  H01B1/02

CPC分类号： H05K1/097 ,  C09D11/52 ,  H01L21/4867 ,  H05K3/102 ,  H05K3/105 ,  H05K3/1283 ,  H05K2201/0266 ,  H05K2201/0272 ,  H05K2203/1131 ,  H05K2203/121 ,  H05K2203/125

摘要： A method of forming conductive features on a substrate from a solution of metal nanoparticles by providing a depositing solution and liquid depositing the depositing solution onto a substrate. The depositing solution is then heated to a temperature below about 140° C. to anneal the first and second nanoparticles and remove any reaction by-products. The depositing solution may be comprised of a mixture of first metal nanoparticles and second metal nanoparticles or a combination of first metal nanoparticles and a soluble second metal nanopartical precursor. Furthermore, the average diameter of the first metal nanoparticles is about 50 nm to about 100 μm and the average diameter of the second metal nanoparticles is about 0.5 nm to about 20 nm.

摘要翻译： 一种通过提供沉积溶液和将沉积溶液沉积在基底上的金属纳米颗粒溶液在基底上形成导电特征的方法。 然后将沉积溶液加热到低于约140℃的温度，以退火第一和第二纳米颗粒并除去任何反应副产物。 沉积溶液可以由第一金属纳米颗粒和第二金属纳米颗粒的混合物或第一金属纳米颗粒和可溶性第二金属纳米颗粒前体的组合构成。 此外，第一金属纳米颗粒的平均直径为约50nm至约100μm，第二金属纳米颗粒的平均直径为约0.5nm至约20nm。

公开(公告)号：US20090256138A1

公开(公告)日：2009-10-15

申请号：US12101942

申请日：2008-04-11

申请人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

发明人： Yiliang Wu ,  Hualong Pan ,  Ping Liu ,  Yuning Li

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L21/02126 ,  H01L21/02282 ,  H01L21/3125 ,  H01L51/0036 ,  H01L51/0533

摘要： Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

摘要翻译： 公开了具有改进的移动性的有机薄膜晶体管。 半导体层包含式（I）的半导体材料：其中R1和R2独立地选自烷基，取代的烷基，芳基和取代的芳基; 并且R 3和R 4独立地选自氢，烷基，取代的烷基，芳基和取代的芳基。 还存在硅烷化界面层，其具有从其表面朝向半导体层延伸的烷基侧链。