公开(公告)号：US5141782A

公开(公告)日：1992-08-25

申请号：US694750

申请日：1991-05-02

申请人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

发明人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

IPC分类号： C23C2/06 ,  C23C2/28

CPC分类号： C23C2/06 ,  C23C2/28

摘要： This invention permits, in a colored galvanized coating using Ti-Zn, Mn-Zn, Ti-Mn-Zn, (Ti, Mn)-(Cu, Ni, Cr)-Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, gold, dark red, olive gray and iridecence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.

摘要翻译： 本发明允许在使用Ti-Zn，Mn-Zn，Ti-Mn-Zn，（Ti，Mn） - （Cu，Ni，Cr）-Zn等的有色镀锌涂层中， 紫色，绿色，蓝色或其他颜色，通过控制镀锌浴的组成和氧化条件。 此外，还可以开发尚未获得的金，深红，橄榄灰和虹彩色。 通过本发明实现的显色比常规更清楚。 代替镀锌，可以采用喷涂工艺。 有色锌涂层上的表面喷涂是有效的。

公开(公告)号：US5077005A

公开(公告)日：1991-12-31

申请号：US486029

申请日：1990-02-27

申请人： Masanori Kato

发明人： Masanori Kato

IPC分类号： C22C9/00 ,  H01B1/02

CPC分类号： H01B1/026 ,  C22C9/00

摘要： There is provided a high-conductivity copper alloy with excellent workability and heat resistance, characterized by the alloy consists essentially of, by weight, at least one element selected from the group consisting of______________________________________ 10-100 ppm In (indium), 10-1000 ppm Ag (silver), 10-300 ppm Cd (cadmium), 10-50 ppm Sn (tin), 10-50 ppm Sb (antimony), 3-30 ppm Pb (lead), 3-30 ppm Bi (bismuth), 3-30 ppm Zr (zirconium), 3-50 ppm Ti (titanium) and 3-30 ppm Hf (hafnium), ______________________________________ and the balance copper. S (sulfur) and O (oxygen) as unavoidable impurities are controlled to amounts of less than 3 ppm S, and less than 5 ppm O, respectively. Other unavoidable impurities are controlled to less than 3 ppm in total amount. The alloy is very suitable for applications such as forming magnet wires and other very thin wires, lead wires for electronic components, lead members for tape automated bonding (TAB) and the like, and members for printed-circuit boards.

摘要翻译： 提供了一种具有优异的可加工性和耐热性的高导电性铜合金，其特征在于该合金基本上由至少一种选自-10-100ppm In（铟），10-1000 ppm Ag（银），-10-300ppm Cd（镉），10-50ppm Sn（锡），-10-50ppm Sb（锑），3-30ppm Pb（铅）， - （铋），3-30ppm的Zr（锆），-350ppm的Ti（钛）和3-30ppm的Hf（铪），余量是铜。 作为不可避免的杂质的S（硫）和O（氧）分别控制在小于3ppm S和小于5ppm O的量。 其他不可避免的杂质总量控制在小于3ppm。 该合金非常适用于诸如形成电磁线和其它非常细的电线，电子元件的引线，用于胶带自动键合的引线部件（TAB）等，以及用于印刷电路板的部件。

公开(公告)号：US5047370A

公开(公告)日：1991-09-10

申请号：US547915

申请日：1990-07-03

申请人： Hiromasa Yamamoto ,  Masayuki Mori ,  Osamu Oda

发明人： Hiromasa Yamamoto ,  Masayuki Mori ,  Osamu Oda

IPC分类号： C30B33/02 ,  C30B29/40 ,  C30B33/00 ,  H01L21/208 ,  H01L21/324

CPC分类号： C30B29/40 ,  C30B29/42 ,  C30B33/00 ,  Y10S148/065 ,  Y10S438/974

摘要： A method for producing compound semiconductor single crystal substrates which comprises the following steps, wafers of a compound semiconductor single crystal grown by the LEC method are installed in an evacuated and sealed quartz ampoule and subjected to a first annealing step at the predetermined temperature for the predetermined period, then the wafers are gradually cooled down to room temperature at the predetermined cooling speed, the cooled wafers are then subjected to etching, the etched wafers are subjected to a second annealing step at the predetermined temperature for the predetermined period in a non-oxidizing atmosphere, and finally, the wafers are gradually cooled down to room temperature.

摘要翻译： 一种制备化合物半导体单晶衬底的方法，包括以下步骤：通过LEC方法生长的化合物半导体单晶的晶片安装在抽真空密封的石英安瓿中，并在预定温度下进行预定温度的第一退火步骤预定 然后将晶片以预定的冷却速度逐渐冷却至室温，然后对冷却的晶片进行蚀刻，将蚀刻后的晶片在预定温度下经受第二退火步骤预定的时间段，在非氧化 气氛，最后将晶片逐渐冷却至室温。

公开(公告)号：US5001018A

公开(公告)日：1991-03-19

申请号：US414383

申请日：1989-09-29

申请人： Toshio Takada ,  Tetsuo Okuyama ,  Kenichi Yoden ,  Teruya Shinjo

发明人： Toshio Takada ,  Tetsuo Okuyama ,  Kenichi Yoden ,  Teruya Shinjo

IPC分类号： C30B29/52 ,  C22C30/00 ,  C22C38/00 ,  C23C14/14 ,  C30B29/68 ,  G11B5/31 ,  H01F10/16 ,  H01F10/32 ,  H01F41/20

CPC分类号： B82Y25/00 ,  G11B5/31 ,  H01F10/32 ,  Y10S428/928 ,  Y10T428/12465 ,  Y10T428/12931 ,  Y10T428/12937 ,  Y10T428/12951

摘要： An Fe-Co base magnetic material comprising periodically laminated structure which consists of an Fe layer which has the bcc (110) plane in the lamination plane, an Fe-Co alloy layer which has the bcc (110) plane in the lamination plane and is laminated on said Fe layer and a Co layer which has the hcp (101) plane in the lamination plane and is laminated on said Fe-Co alloy layer, which laminated structure has controlled magnetostriction.

摘要翻译： 一种Fe-Co基磁性材料，包括由在层叠平面中具有bcc（110）面的Fe层构成的周期性层叠结构，在层叠平面中具有bcc（110）面的Fe-Co合金层， 层叠在所述Fe层上，并且在层叠平面中具有hcp（101）面的Co层，层叠在所述Fe-Co合金层上，该层叠结构具有受控的磁致伸缩。

公开(公告)号：US4908275A

公开(公告)日：1990-03-13

申请号：US160479

申请日：1988-02-25

申请人： Masahiro Tsuji ,  Susumu Kawauchi ,  Hiroshi Nakayama

发明人： Masahiro Tsuji ,  Susumu Kawauchi ,  Hiroshi Nakayama

IPC分类号： H01L23/498 ,  H05K1/00 ,  H05K1/09

CPC分类号： H01L23/49866 ,  H05K1/09 ,  H01L2924/0002 ,  H05K1/0393 ,  H05K2201/0355 ,  Y10S428/901 ,  Y10T29/49121 ,  Y10T428/31678 ,  Y10T428/31681 ,  Y10T428/31692

摘要： There is provided a film carrier comprising a resin base film and a rolled copper foil laminated thereon, said rolled copper foil forming leads for mounting semiconductor chips or other electronic components in place, characterized in that said rolled copper foil is made of a copper alloy composition consisting essentially of a total of 0.005 to 1.5% by weight of one or two or more selected from a group consisting of______________________________________ P 0.005-0.05 wt %, B 0.005-0.05 wt %, Al 0.01-0.5 wt %, As 0.01-0.5 wt %, Cd 0.01-0.5 wt %, Co 0.01-0.5 wt %, Fe 0.01-0.5 wt %, In 0.01-0.5 wt %, Mg 0.01-0.5 wt %, Mn 0.01-0.5 wt %, Ni 0.01-0.5 wt %, Si 0.01-0.5 wt %, Sn 0.01-0.5 wt %, Te 0.01-0.5 wt %, Ag 0.01-1 wt %, Cr 0.01-1 wt %, Hf 0.01-1 wt %, Zn 0.01-1 wt % and Zn 0.01-1 wt % ______________________________________ and the remainder Cu with inevitable impurities, preferably with oxygen content of not more than 50 ppm. There is also provided a method for manufacturing a film carrier characterized in that the leads of the film carrier for mounting semiconductor chips or other electronic components in place are formed by the steps of providing a rolled copper alloy foil having the composition defined above, preferably strain relief annealing it after its final cold rolling and then laminating the annealed foil onto a resin base film followed by etching.