公开(公告)号：US5022937A

公开(公告)日：1991-06-11

申请号：US116613

申请日：1987-11-03

申请人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

发明人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

IPC分类号： C23C2/06 ,  C23C2/08 ,  C23C2/26 ,  C23C2/28 ,  C23C4/08 ,  C23C28/00

CPC分类号： C23C4/08 ,  C23C2/06 ,  C23C2/08 ,  C23C2/26 ,  C23C2/28

摘要： This invention permits, in a colored galvanized coating using Ti--Zn, Mn--Zn, Ti--Mn--Zn, (Ti, Mn)--(Cu, Ni, Cr)--Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, gold, dark red, olive gray and iridescence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.

摘要翻译： 本发明允许在使用Ti-Zn，Mn-Zn，Ti-Mn-Zn，（Ti，Mn） - （Cu，Ni，Cr）-Zn等的有色镀锌涂层中， 紫色，绿色，蓝色或其他颜色，通过控制镀锌浴的组成和氧化条件。 此外，可以开发尚未获得的金，深红，橄榄灰和彩虹色。 通过本发明实现的显色比常规更清楚。 代替镀锌，可以采用喷涂工艺。 有色锌涂层上的表面喷涂是有效的。

公开(公告)号：US5141782A

公开(公告)日：1992-08-25

申请号：US694750

申请日：1991-05-02

申请人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

发明人： Masatoshi Tomita ,  Susumu Yamamoto ,  Chikara Tominaga ,  Kazuya Nakayama

IPC分类号： C23C2/06 ,  C23C2/28

CPC分类号： C23C2/06 ,  C23C2/28

摘要： This invention permits, in a colored galvanized coating using Ti-Zn, Mn-Zn, Ti-Mn-Zn, (Ti, Mn)-(Cu, Ni, Cr)-Zn, etc., to clearly and stably develop yellow, purple, green, blue or other color by controlling the composition of a galvanizing bath and oxidizing conditions. Further, gold, dark red, olive gray and iridecence color which have not yet obtained can be developed. The color development effected by this invention is clearer than conventional. Instead of galvanizing, the spraying process may be adopted. The surface painting on the colored zinc coating is effective.

摘要翻译： 本发明允许在使用Ti-Zn，Mn-Zn，Ti-Mn-Zn，（Ti，Mn） - （Cu，Ni，Cr）-Zn等的有色镀锌涂层中， 紫色，绿色，蓝色或其他颜色，通过控制镀锌浴的组成和氧化条件。 此外，还可以开发尚未获得的金，深红，橄榄灰和虹彩色。 通过本发明实现的显色比常规更清楚。 代替镀锌，可以采用喷涂工艺。 有色锌涂层上的表面喷涂是有效的。

公开(公告)号：US07034346B2

公开(公告)日：2006-04-25

申请号：US10445952

申请日：2003-05-28

申请人： Kazuya Nakayama ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa

发明人： Kazuya Nakayama ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa

IPC分类号： H01L27/148

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4933 ,  H01L29/66712 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.

摘要翻译： 根据本发明的实施例的半导体器件具有通过栅极绝缘膜形成在半导体衬底上并具有狭缝部分的栅电极; 形成在栅电极的两个侧面和狭缝部的侧壁处的侧壁膜，并且填充狭缝部分的内部并在狭缝部分正下方覆盖栅极绝缘膜; 以及形成为覆盖栅电极和侧壁膜的层间绝缘膜。

公开(公告)号：US06469425B1

公开(公告)日：2002-10-22

申请号：US09501241

申请日：2000-02-10

申请人： Tadashi Sakai ,  Kazuya Nakayama ,  Li Zhang ,  Gehan Anil Joseph Amaratunga ,  Ioannis Alexandrou ,  Mark Baxendale ,  Nalin Rupasinghe

发明人： Tadashi Sakai ,  Kazuya Nakayama ,  Li Zhang ,  Gehan Anil Joseph Amaratunga ,  Ioannis Alexandrou ,  Mark Baxendale ,  Nalin Rupasinghe

IPC分类号： H01J130

CPC分类号： H01J9/022 ,  H01J1/30 ,  H01J2201/30446

摘要： An electron emission film includes a matrix consisting essentially of amorphous carbon and fullerene-like structures consisting essentially of a two-dimensional network of six-membered carbon rings. The fullerene-like structures are dispersed in the matrix and partially project from the matrix. The weight ratio of amorphous carbon to the fullerene-like structures is about 50:50 to 5:95. Amorphous carbon contains nitrogen acting as a donor at a concentration of about 4×10−7 to 10 atom %.

摘要翻译： 电子发射膜包括基本上由无定形碳和富勒烯样结构组成的基体，其基本上由六元碳环的二维网络组成。 富勒烯样结构分散在基质中并部分地从基质上突出。 无定形碳与富勒烯样结构的重量比为约50:50至5:95。 无定形碳含有以约4×10-7至10原子％浓度的作为供体的氮。

公开(公告)号：US5793065A

公开(公告)日：1998-08-11

申请号：US483325

申请日：1995-06-07

申请人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

发明人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

IPC分类号： H01L29/423 ,  H01L29/745 ,  H01L29/749 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L29/7455 ,  H01L29/42308 ,  H01L29/749

摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

公开(公告)号：US20050258503A1

公开(公告)日：2005-11-24

申请号：US11186838

申请日：2005-07-22

申请人： Kazuya Nakayama ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa

发明人： Kazuya Nakayama ,  Satoshi Aida ,  Shigeo Kouzuki ,  Masaru Izumisawa

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788

CPC分类号： H01L29/7802 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/4232 ,  H01L29/42364 ,  H01L29/42376 ,  H01L29/4933 ,  H01L29/66712 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment of the present invention has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films.

摘要翻译： 根据本发明的实施例的半导体器件具有通过栅极绝缘膜形成在半导体衬底上并具有狭缝部分的栅电极; 形成在栅电极的两个侧面和狭缝部的侧壁处的侧壁膜，并且填充狭缝部分的内部并在狭缝部分正下方覆盖栅极绝缘膜; 以及形成为覆盖栅电极和侧壁膜的层间绝缘膜。

公开(公告)号：US06236069B1

公开(公告)日：2001-05-22

申请号：US09102360

申请日：1998-06-23

申请人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

发明人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

IPC分类号： H01L2974

CPC分类号： H01L29/7455 ,  H01L29/42308 ,  H01L29/749

摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

摘要翻译： 本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面 形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽 距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

公开(公告)号：US6057636A

公开(公告)日：2000-05-02

申请号：US931417

申请日：1997-09-16

申请人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

发明人： Tadashi Sakai ,  Tomio Ono ,  Naoshi Sakuma ,  Hiromichi Ohashi ,  Kazuya Nakayama

IPC分类号： H01J1/304 ,  H01J19/24 ,  H01J21/10 ,  H03K17/54 ,  H01J1/46 ,  H01J1/02 ,  H01J1/05

CPC分类号： H01J21/105 ,  H03K17/545

摘要： The present invention provides a micro power switch comprising a cold cathode for emitting electrons, an anode for capturing the electrons emitted from the cold cathode, and a control electrode for controlling an amount of the electrons emitted from the cold cathode, wherein the cold cathode is made of material having a smaller electron emission barrier than the control electrode, the anode is applied with a positive potential in relation to the cold cathode, and the control electrode is applied with a potential equal to or lower than a potential of the cold cathode.

摘要翻译： 本发明提供了一种微功率开关，其包括用于发射电子的冷阴极，用于捕获从冷阴极发射的电子的阳极和用于控制从冷阴极发射的电子的量的控制电极，其中冷阴极为 由具有比控制电极更小的电子发射势垒的材料制成，阳极相对于冷阴极施加正电位，并且控制电极施加等于或低于冷阴极电位的电位。

公开(公告)号：US5464994A

公开(公告)日：1995-11-07

申请号：US291754

申请日：1994-08-16

申请人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

发明人： Takashi Shinohe ,  Kazuya Nakayama ,  Minami Takeuchi ,  Masakazu Yamaguchi ,  Mitsuhiko Kitagawa ,  Ichiro Omura ,  Akio Nakagawa

IPC分类号： H01L29/423 ,  H01L29/745 ,  H01L29/749 ,  H01L29/74

CPC分类号： H01L29/7455 ,  H01L29/42308 ,  H01L29/749

摘要： Disclosed herein is an insulated-gate thyristor comprising a base layer of a first conductivity type, having first and second major surfaces, a first main-electrode region of the first conductivity type, formed in the first major surface of the base layer, a second main-electrode region of a second conductivity type, formed in the second major surface of the base layer, at least a pair of grooves extending from the first main-electrode region into the base layer, and opposing each other and spaced apart by a predetermined distance, insulated gate electrodes formed within the grooves, and a turn-off insulated-gate transistor structure for releasing carriers of the second conductivity type from the base layer.

摘要翻译： 本文公开了一种绝缘栅极晶闸管，其包括第一导电类型的基极层，具有第一和第二主表面，形成在基底层的第一主表面中的第一导电类型的第一主电极区域，第二导电类型的第二主表面 形成在基底层的第二主表面的第二导电类型的主电极区域，至少一对从第一主电极区域延伸到基底层中并且彼此相对并间隔开预定的凹槽 距离，形成在沟槽内的绝缘栅电极，以及用于从基层释放第二导电类型的载流子的关断绝缘栅晶体管结构。

公开(公告)号：US20120014541A1

公开(公告)日：2012-01-19

申请号：US13129702

申请日：2010-09-03

申请人： Kazuya Nakayama ,  Shigeo Masai

发明人： Kazuya Nakayama ,  Shigeo Masai

IPC分类号： H04R3/00

CPC分类号： H03F3/45475 ,  H03F1/52 ,  H03F3/181 ,  H03F3/45183 ,  H03F2200/444 ,  H03F2203/45518 ,  H03F2203/45526 ,  H04R3/00

摘要： An amplifying device for a condenser-microphone according to the present invention includes: a differential amplifier (20) having an inverting input terminal (1) to which a sound pressure signal output from a condenser microphone (21) is input and a non-inverting input terminal (2) to which a dc bias voltage is applied; a capacitor (24) connected between an output terminal (3) of the differential amplifier (20) and the inverting input terminal (1) of the differential amplifier (20); a resistive element (23) connected, in parallel with the capacitor (24), between the output terminal (3) of the differential amplifier (20) and the inverting input terminal (1) of the differential amplifier (20); and an ESD protecting element (25) having bidirectional diode characteristics, the ESD protecting element (25) being connected, in parallel with the capacitor (24), between the output terminal (3) of the differential amplifier (20) and the inverting input terminal (1) of the differential amplifier (20).

摘要翻译： 根据本发明的用于电容麦克风的放大装置包括：差分放大器（20），其具有从电容式麦克风（21）输出的声压信号被输入的反相输入端子（1） 输入端子（2），施加直流偏置电压; 连接在差分放大器（20）的输出端（3）和差分放大器（20）的反相输入端（1）之间的电容器（24）。 与差分放大器（20）的输出端（3）和差分放大器（20）的反相输入端（1）之间的电容器（24）并联连接的电阻元件（23）。 和具有双向二极管特性的ESD保护元件（25），所述ESD保护元件（25）与所述电容器（24）并联连接在所述差分放大器（20）的输出端子（3）和所述反相输入端 端子（1）的差分放大器（20）。