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    Electron Gun, Electron Beam Applying Device, and Irradiation Position Shifting Method
    81.
    发明公开
    Electron Gun, Electron Beam Applying Device, and Irradiation Position Shifting Method 审中-公开

    公开(公告)号：US20240222062A1

    公开(公告)日：2024-07-04

    申请号：US18556076

    申请日：2022-03-25

    Applicant: Photo electron Soul, Inc.

    Inventor： Tomohiro NISHITANI

    IPC: H01J37/147 ,  H01J1/34 ,  H01J37/073

    CPC classification number: H01J37/1471 ,  H01J1/34 ,  H01J37/073 ,  H01J2201/3423 ,  H01J2237/0203

    Abstract: Provided are an electron gun that can extend the lifetime of a photocathode, an electron beam applicator on which the electron gun is mounted, and an irradiation position moving method. This object can be achieved by an electron gun including: a light source; a photocathode that emits an electron beam in response to receiving light from the light source; an anode; a motion device that moves excitation light irradiating the photocathode; and a control unit, the control unit controls the motion device to move an irradiation position of the excitation light from a position Rn (n is a natural number) on the photocathode to a position Rn+1 outside an excitation light irradiation-caused deteriorated range associated with the position Rn, the excitation light irradiation-caused deteriorated range is a range where the photocathode is deteriorated due to irradiation with the excitation light, and the distance between the center of a spot of the excitation light at the position Rn and the center of a spot of the excitation light at the position Rn+1 is at least three or more times a spot diameter of the excitation light on the photocathode.

    MULTIBAND PHOTOCATHODE AND ASSOCIATED DETECTOR
    83.
    发明申请
    MULTIBAND PHOTOCATHODE AND ASSOCIATED DETECTOR 审中-公开

    公开(公告)号：US20180096829A1

    公开(公告)日：2018-04-05

    申请号：US15564880

    申请日：2016-04-06

    Applicant: Photonis France

    Inventor： Moustapha Conde ,  Justin Foltz

    IPC: H01J40/06 ,  H01J40/16

    CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J40/16 ,  H01J2201/3423

    Abstract: The invention relates to a photocathode including an input window (210) suitable for receiving a flow of incident photons, and an active layer (230), the active layer consisting of a plurality of elementary layers (2301, 2302) made of semiconductor materials having decreasing forbidden bandwidths in the direction of the flow of incident photons. The surface of the photocathode opposite the input window is structured so that each elementary layer of the active layer has its own photoelectric emission surface (2401, 2402). By choosing the semiconductor materials of the elementary layers, it is possible to obtain an image which has high sensitivity in both the visible spectrum and the near infrared.

    SPIN-POLARIZED ELECTRON SOURCE
    84.
    发明申请
    SPIN-POLARIZED ELECTRON SOURCE 有权
    旋转极化电子源

    公开(公告)号：US20110089397A1

    公开(公告)日：2011-04-21

    申请号：US12736270

    申请日：2009-03-24

    Applicant: Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

    Inventor： Toru Ujihara ,  Xiuguang Jin ,  Yoshikazu Takeda ,  Tsutomu Nakanishi ,  Naoto Yamamoto ,  Takashi Saka ,  Toshihiro Kato

    IPC: H01L29/12

    CPC classification number: G21K1/16 ,  H01J1/34 ,  H01J3/021 ,  H01J37/06 ,  H01J2201/3423 ,  H01J2203/0296 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557 ,  H01J2237/26

    Abstract: To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer.In a spin-polarized electron generating device having a substrate, a buffer layer, and a strained superlattice layer formed on the buffer layer, an intermediate layer formed of a crystal having a lattice constant greater than that of a crystal used to form the buffer layer intervenes between the substrate and the buffer layer. With this arrangement, tensile strain causes cracks to be formed in the buffer layer in a direction perpendicular to the substrate, whereby the buffer layer has mosaic-like appearance. As a result, glide dislocations in an oblique direction do not propagate to the strained superlattice layer to be grown on the buffer layer, thereby improving crystallinity of the strained superlattice layer. Accordingly, spin polarization of excited electrons and external quantum efficiency of polarized electrons improve.

    Abstract translation: 为了提供具有高自旋极化和高外部量子效率的自旋极化电子发生器件，同时在选择衬底，缓冲层和应变超晶格层的材料方面具有一定的自由度。 在具有形成在缓冲层上的衬底，缓冲层和应变超晶格层的自旋极化电子发生器件中，由晶格常数大于用于形成缓冲层的晶体的晶格常数的晶体形成的中间层 介于衬底和缓冲层之间。 通过这种布置，拉伸应变使得缓冲层中的垂直于基板的方向形成裂纹，由此缓冲层具有马赛克状外观。 结果，倾斜方向的滑移位错不会传播到在缓冲层上生长的应变超晶格层，从而提高应变超晶格层的结晶度。 因此，激发电子的自旋极化和极化电子的外部量子效率提高。

    Photocathode
    85.
    发明申请
    Photocathode 失效
    光电阴极

    公开(公告)号：US20070096648A1

    公开(公告)日：2007-05-03

    申请号：US11585936

    申请日：2006-10-25

    Applicant: Kazutoshi Nakajima ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Toru Hirohata

    Inventor： Kazutoshi Nakajima ,  Minoru Niigaki ,  Tomoko Mochizuki ,  Toru Hirohata

    IPC: H01J40/06

    CPC classification number: H01J1/34 ,  H01J2201/3423

    Abstract: A semiconductor photocathode 1 includes: a transparent substrate 11; a first electrode 13, formed on the transparent substrate 11 and enabling passage of light that has been transmitted through the transparent substrate 11; a window layer 14, formed on the first electrode 13 and formed of a semiconductor material with a thickness of no less than 10 nm and no more than 200 nm; a light absorbing layer 15, formed on the window layer 14, formed of a semiconductor material that is lattice matched to the window layer 14, is narrower in energy band gap than the window layer 14, and in which photoelectrons are excited in response to the incidence of light; an electron emission layer 16, formed on the light absorbing layer 15, formed of a semiconductor material that is lattice matched to the light absorbing layer 15, and emitting the photoelectrons excited in the light absorbing layer 15 to the exterior from a surface; and a second electrode 18, formed on the electron emission layer.

    Abstract translation: 半导体光电阴极1包括：透明基板11; 第一电极13，其形成在透明基板11上，并能透过透明基板11的光通过; 窗口层14，其形成在第一电极13上并且由不小于10nm且不大于200nm的厚度的半导体材料形成; 形成在与窗口层14格子匹配的半导体材料的窗口层14上的光吸收层15的能带隙比窗口层14更窄，并且其中光电子响应于 光的发生; 由与光吸收层15晶格匹配的半导体材料形成的光吸收层15上形成的电子发射层16，并且将从光吸收层15激发的光电子从表面发射到外部; 以及形成在电子发射层上的第二电极18。

    Low-photon flux image-intensified electronic camera
    86.
    发明授权
    Low-photon flux image-intensified electronic camera 有权

    公开(公告)号：US07129464B2

    公开(公告)日：2006-10-31

    申请号：US10969379

    申请日：2004-10-19

    Applicant: Michael P. Buchin

    Inventor： Michael P. Buchin

    IPC: G01N21/64

    CPC classification number: H01J31/507 ,  H01J2201/3423 ,  H01J2231/50073 ,  H01J2231/5016

    Abstract: A low-photon flux image-intensified electronic camera comprises a gallium arsenide phosphide (GaAsP) photocathode in a high vacuum tube assembly behind a hermetic front seal to receive image photons. Such is cooled by a Peltier device to −20° C. to 0° C., and followed by a dual microchannel plate. The microchannels in each plate are oppositely longitudinally tilted away from the concentric to restrict positive ions that would otherwise contribute to the generation high brightness “scintillation” noise events at the output of the image. A phosphor-coated output fiberoptic conducts intensified light to an image sensor device. This too is chilled and produces a camera signal output. A high voltage power supply connected to the dual microchannel plate provides for gain control and photocathode gating and shuttering. A fiberoptic taper is used at the output of the image intensifier vacuum tube as a minifier between the internal output fiberoptic and the image sensor.

    Robust pierce gun
    88.
    发明申请
    Robust pierce gun 失效

    公开(公告)号：US20020125841A1

    公开(公告)日：2002-09-12

    申请号：US09992694

    申请日：2001-11-20

    Inventor： Frederick M. Mako ,  Amnon Fisher

    IPC: G09G001/04

    CPC classification number: H01J3/023 ,  H01J23/06 ,  H01J2201/3423

    Abstract: The present invention pertains to an electron gun that generates an electron flow and the application of this gun to produce rf energy or for injectors. The electron gun comprises an electrostatic cavity having a first stage with emitting faces and multiple stages with emitting sections. The gun is also comprised of a mechanism for producing an electrostatic force which encompasses the emitting faces and the multiple emitting sections so electrons are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons and to further contact other emitting sections to generate additional electrons and so on then finally to escape the end of the cavity. The emitting sections preferably provide the cavity with an accelerating force for electrons inside the cavity. The multiple sections preferably include thin forward emitting surfaces. The forward emitting surfaces can be of an annular shape, or of a circular shape, or of a rhombohedron shape. The mechanism preferably includes a mechanism for producing an electrostatic electric field that provides the force and which has a radial component that prevents the electrons from straying out of the region between the first stage with emitting faces and the multiple emitting sections. Additionally, the gun includes a mechanism for producing a magnetic field to contain the electrons anywhere from the first stage with emitting faces or any emitting section and to the end of the cavity. The present invention pertains to a method for producing a flow of electrons. The method comprises the steps of moving at least a first electron in a first direction at one location. Next there is the step of striking a first area with the first electron. Then there is the step of producing additional electrons at the first area due to the first electron. Next there is the step of moving electrons from the first area to a second area and transmitting electrons through the second area and creating more electrons due to electrons from the first area striking the second area. These newly created electrons from the second area move in the first direction then strike the third area, fourth area, etc. Each area creates even more electrons in a repeating manner by moving in the first direction to multiple areas. This process is also repeated at different locations. The mechanism preferably includes a mechanism for accelerating the electrons inside the electrostatic cavity to allow the electron multiplication to continue. The mechanism preferably includes a control grid for bunching the electron flow. The present invention pertains to an electron gun. The electron gun comprises an electrostatic cavity having a first stage with electron emitting faces and multiple stages with electron emitting sections. The electron gun also comprises a mechanism for producing an electrostatic force which encompasses the electron emitting faces and the multiple electron emitting sections so electrons from the electron emitting faces and sections are directed from the emitting faces toward the emitting sections to contact the emitting sections and generate additional electrons on the opposite sides of the emitting sections and to further contact other emitting sections. The present invention pertains to a method for producing electrons. The method comprises the steps of moving at least a first electron in a first direction from a first location. Then, there is the step of striking a first area with the first electron. Next, there is the step of producing additional electrons at the first area due to the first electrons on the opposite side of the first area which was struck by the first electron. Next, there is the step of moving electrons from the first area to a second area. Then, there is the step of transmitting electrons to the second area and creating more electrons due to electrons from the first area striking the second area.

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