公开(公告)号：US20180106831A1

公开(公告)日：2018-04-19

申请号：US15837657

申请日：2017-12-11

申请人： Carl Zeiss SMT GmbH

发明人： Michael Budach ,  Tristan Bret ,  Klaus Edinger ,  Thorsten Hofmann

IPC分类号： G01Q30/02 ,  B82Y40/00 ,  B82Y10/00 ,  G03F1/84 ,  G03F1/22 ,  G03F1/86

CPC分类号： G01Q30/02 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/22 ,  G03F1/84 ,  G03F1/86

摘要： The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data.

公开(公告)号：US20180012349A1

公开(公告)日：2018-01-11

申请号：US15545067

申请日：2015-01-23

申请人： Hitachi High-Technologies Corporation

发明人： Kei SAKAI ,  Satoru YAMAGUCHI ,  Kazuyuki HIRAO ,  Yasunori TAKASUGI

IPC分类号： G06T7/00 ,  G03F7/20 ,  G03F1/86 ,  H01J37/22 ,  G01B15/04

CPC分类号： G06T7/0004 ,  G01B15/04 ,  G01B2210/56 ,  G03F1/86 ,  G03F7/70625 ,  G06T2207/10056 ,  G06T2207/30148 ,  H01J37/22 ,  H01J37/222

摘要： The purpose of the present invention is to provide a pattern measurement apparatus that appropriately assesses patterns formed by patterning methods for forming patterns that do not exist on photomasks. In order to achieve this purpose, the present invention provides a pattern measurement apparatus comprising a processor that measures the dimensions of patterns formed on a sample by using data acquired by irradiating the sample with a beam, wherein the processor extracts pattern coordinate information on the basis of the data acquired by irradiating the sample with a beam, and uses the coordinate information to generate measurement reference data used when performing dimension measurements of the pattern.

公开(公告)号：US09164044B2

公开(公告)日：2015-10-20

申请号：US13849807

申请日：2013-03-25

申请人： NuFlare Technology, Inc.

发明人： Shigehiro Hara ,  Yasuo Kato ,  Akihito Anpo ,  Noriaki Nakayamada

IPC分类号： G01N23/00 ,  G01N27/00 ,  H01J37/317 ,  G03F1/86

CPC分类号： G01N23/00 ,  G01N27/00 ,  G03F1/86 ,  H01J37/3174 ,  H01J2237/31769

摘要： An inspection method of pattern writing data includes creating an area map of a figure pattern written on a target object for each modulation rate for modulating a dose by using modulation rate data to modulate the dose in a case that a plurality of figure patterns is written on the target object by using a charged particle beam, and layout data in which the plurality of figure patterns is defined; converting the layout data into pattern writing data to be input into a lithography apparatus; and inspecting an amount of electric charge for each predetermined region by using the area map when a pattern is written on the target object by using the pattern writing data.

摘要翻译： 图案写入数据的检查方法包括：通过使用调制率数据来调制剂量的调制速度，在写入多个图形图案的情况下，生成针对目标对象写入的图形图形的区域图，以调制剂量 通过使用带电粒子束的目标对象，以及定义多个图形图案的布局数据; 将布局数据转换为图案写入数据以输入到光刻设备中; 并且通过使用图案写入数据通过使用区域图来检查每个预定区域的电荷量，当图案被写入目标对象时。

公开(公告)号：US06969853B2

公开(公告)日：2005-11-29

申请号：US10664440

申请日：2003-09-18

申请人： Mitsuyuki Asaki ,  Akira Kintaka

发明人： Mitsuyuki Asaki ,  Akira Kintaka

IPC分类号： G01B15/00 ,  G01Q20/00 ,  G01Q30/02 ,  G03F1/84 ,  G03F1/86 ,  G03F7/20 ,  H01J37/00 ,  H01J37/244 ,  H01J37/28 ,  H01J37/305 ,  H01L21/027 ,  H01L21/66 ,  H01J27/244

CPC分类号： H01J37/28 ,  H01J2237/2814 ,  H01J2237/2817

摘要： A pattern width measuring apparatus for accurately measuring pattern width of a pattern formed on a wafer using an electron beam. The pattern width measuring apparatus includes: an electron gun for generating the electron beam; a deflector for scanning the pattern with the electron beam by deflecting the electron beam; a first secondary electron detector and a second secondary electron detector for detecting secondary electrons generated when the electron beam is irradiated on the pattern; a first edge detector for detecting position of a first edge of the pattern based on the quantity of the secondary electrons detected by the first secondary electron detector; a second edge detector for detecting position of a second edge of the pattern based on the quantity of the secondary electrons detected by the second secondary electron detector; and a pattern width computing section for computing pattern width of the pattern based on the position of the first edge and the position of the second edge detected by the first edge detector and the second edge detector.

摘要翻译： 一种用于使用电子束精确测量在晶片上形成的图案的图形宽度的图案宽度测量装置。 图案宽度测量装置包括：用于产生电子束的电子枪; 用于通过偏转电子束用电子束扫描图案的偏转器; 第一二次电子检测器和第二二次电子检测器，用于检测当电子束照射在图案上时产生的二次电子; 第一边缘检测器，用于基于由第一二次电子检测器检测到的二次电子的量来检测图案的第一边缘的位置; 第二边缘检测器，用于基于由第二二次电子检测器检测到的二次电子的量来检测图案的第二边缘的位置; 以及图案宽度计算部分，用于基于由第一边缘检测器和第二边缘检测器检测到的第一边缘的位置和第二边缘的位置来计算图案的图案宽度。

公开(公告)号：US06861657B2

公开(公告)日：2005-03-01

申请号：US10657429

申请日：2003-09-08

申请人： Mami Miyasaka

发明人： Mami Miyasaka

IPC分类号： H01J37/305 ,  G03F1/20 ,  G03F1/84 ,  G03F1/86 ,  G03F7/20 ,  G03F9/00 ,  G21G5/00 ,  H01J37/317 ,  H01L21/027

CPC分类号： G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/50 ,  G03F1/84 ,  G03F1/86 ,  H01J37/3175 ,  H01J2237/31761 ,  H01J2237/31762 ,  H01J2237/31794

摘要： An electron beam exposure mask comprises a main mask and one or more compensation masks. The main mask has a plurality of first defined masks. The compensation mask includes one or more non-defective second defined masks each having a pattern configuration to be formed in a defective among said first defined masks. In performing exposures by using this electron beam exposure mask, first defined masks are used as long as the first defined masks are non-defective, and the second defined mask corresponding to a first defined mask is used when the first defined mask is defective.

公开(公告)号：US5384463A

公开(公告)日：1995-01-24

申请号：US238349

申请日：1994-05-05

申请人： Ichiro Honjo ,  Kenji Sugishima ,  Masaki Yamabe

发明人： Ichiro Honjo ,  Kenji Sugishima ,  Masaki Yamabe

IPC分类号： G03F1/86 ,  H01J37/244 ,  H01J37/30 ,  H01J37/06

CPC分类号： G03F1/86 ,  H01J37/244 ,  H01J37/3005 ,  H01J2237/221 ,  H01J2237/2441 ,  H01J2237/24435 ,  H01J2237/2447 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01J2237/2817

摘要： A pattern inspection apparatus is designed to quickly and accurately perform an inspection of an inspection sample, such as a mask or a wafer or the like by irradiating electron beams onto the inspection sample and detecting secondary or backscattered electrons reflected from the surface of the inspection sample and/or transmitted electrons passing through the inspection sample. The pattern inspection apparatus includes an electron beam generator including at least one electron gun for generating at least one electron beam irradiating onto the surface of the inspection sample. A movable support is provided for supporting the inspection sample. The apparatus also includes a detector unit having a plurality of electron detecting elements for detecting electrons containing information related to the construction of the inspection sample and a detection signal processor for processing simultaneously or in parallel formation the outputs of the electron detecting elements of the detector. Also, when a plurality of electron beams are used for simultaneous irradiation of the inspection sample, the pattern inspection apparatus is provided with a mechanism for avoiding interference between the reflected electrons of the adjacent electron beams.

摘要翻译： 图案检查装置被设计为通过将电子束照射到检查样品上并检测从检查样品的表面反射的次级或反向散射电子来快速且准确地执行诸如掩模或晶片等的检查样本的检查 和/或穿过检查样品的透射电子。 图案检查装置包括电子束发生器，其包括至少一个电子枪，用于产生照射到检查样品表面上的至少一个电子束。 提供用于支撑检查样品的可移动支撑件。 该装置还包括具有多个电子检测元件的检测器单元，用于检测包含与检查样本的结构有关的信息的电子;以及检测信号处理器，用于同时或并行地形成检测器的电子检测元件的输出。 此外，当使用多个电子束同时照射检查样本时，图案检查装置设置有用于避免相邻电子束的反射电子之间的干涉的机构。

公开(公告)号：US5132186A

公开(公告)日：1992-07-21

申请号：US678423

申请日：1991-04-01

申请人： Susumu Takeuchi ,  Nobuyuki Yoshioka

发明人： Susumu Takeuchi ,  Nobuyuki Yoshioka

IPC分类号： G03F1/00 ,  G03F1/22 ,  G03F1/84 ,  G03F1/86 ,  H01L21/027

CPC分类号： G03F1/22 ,  Y10S430/167

摘要： A mask for X-ray lithography includes a transparent thin film (1) of SiC, an X-ray absorbing pattern (2) of Au formed on the surface of the transparent thin film (1) and a support member (3) of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing the back surface of the transparent thin film (1). A transparent conductive thin film (5) of In.sub.2 O.sub.3 is formed over the back surfaces of the exposed transparent thin film (1) and the support member (3).

公开(公告)号：US4814615A

公开(公告)日：1989-03-21

申请号：US45538

申请日：1987-05-04

申请人： Satoru Fushimi ,  Yasuo Nakagawa ,  Asahiro Kuni ,  Hitoshi Kubota ,  Hiroya Koshishiba

发明人： Satoru Fushimi ,  Yasuo Nakagawa ,  Asahiro Kuni ,  Hitoshi Kubota ,  Hiroya Koshishiba

IPC分类号： H01L21/66 ,  G01B15/00 ,  G01N23/02 ,  G02B21/00 ,  G03F1/00 ,  G03F1/84 ,  G03F1/86 ,  H01J37/26 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/86 ,  H01J37/3174 ,  H01J2237/2802 ,  H01J2237/31798

摘要： In accordance with the present invention, there is provided a pattern defect detecting apparatus using a scanning and transmission electron microscope, comprising an electron gun for accelerating an electron beam with high energy enough to transmit it through a sample and for radiating the accelerated electron beam, a condenser lens for focusing the electron beam generated by said electron gun, a beam deflection coil for deflecting the electron beam focused by said condenser lens, an objective lens for further focusing the electron beam deflected by said beam deflection coil onto a fixed spot, an XY stage for disposing the sample so as to be opposed to said objective lens, said XY stage being movable in X and Y directions in a step and repeat manner, a sample chamber for housing the XY stage in vacuum, said sample chamber including at least the outlet of the electron beam of said objective lens, an electron beam detector for detecting electron beams transmitted through said sample, said electron beam detector being fixed to a stationary member such as said chamber or a lens barrel, and defect detecting means for scanning the electron beam by using said beam deflection coil for each step and repeat operation of said XY stage, for comparing a video signal obtained from said electron beam detector with a reference pattern read out from memory means, and for thereby detecting a defect of the sample.

摘要翻译： 根据本发明，提供了一种使用扫描和透射电子显微镜的图案缺陷检测装置，其包括用于加速具有足够高能量的电子束以通过样品透射并用于辐射加速电子束的电子枪的电子枪， 用于聚焦由所述电子枪产生的电子束的聚光透镜，用于偏转由所述聚光透镜聚焦的电子束的光束偏转线圈，用于将由所述光束偏转线圈偏转的电子束进一步聚焦到固定点上的物镜， XY台，用于将样品设置为与所述物镜相对，所述XY台可以在X和Y方向上以一个步骤和重复的方式移动，用于在XY真空中容纳XY台的样品室，所述样品室至少包括 所述物镜的电子束的出口，用于检测透过所述样品的电子束的电子束检测器 d电子束检测器固定到诸如所述腔室或透镜镜筒之类的静止构件上，以及缺陷检测装置，用于通过每个步骤使用所述光束偏转线圈扫描电子束，并重复所述XY平台的操作，用于比较视频信号 从所述电子束检测器获得从存储装置读出的参考图案，从而检测样品的缺陷。

公开(公告)号：US20230042743A1

公开(公告)日：2023-02-09

申请号：US17679749

申请日：2022-02-24

申请人： Samsung Electronics Co., Ltd.

发明人： Sukjong Bae ,  Johan Hofkens ,  Haifeng Yuan ,  Flip de Jong

IPC分类号： G03F1/86 ,  G03F7/20 ,  G01N21/64

摘要： According to example embodiments, there is provided a photoresist inspection method. The photoresist inspection method includes: providing a photoresist on a substrate; irradiating the photoresist with an electron beam and an excitation beam; detecting fluorescent light generated by the photoresist in response to the excitation beam; and evaluating the photoresist based on the fluorescent light.

公开(公告)号：US11429018B2

公开(公告)日：2022-08-30

申请号：US16129826

申请日：2018-09-13

申请人： FUJIFILM Corporation

发明人： Tetsuya Shimizu ,  Tsukasa Yamanaka ,  Yukihisa Kawada

IPC分类号： G03F7/32 ,  G03F1/68 ,  G03F7/40 ,  G03F7/11 ,  G03F7/039 ,  G03F7/16 ,  G03F7/00 ,  G03F1/86 ,  G03F7/38 ,  H01J49/10

摘要： In a method of manufacturing a chemical fluid for manufacturing an electronic material, a method of reducing particulate metal in the chemical fluid is selected according to a concentration of particulate metal including an iron atom, a concentration of particulate metal including a copper atom, and a concentration of particulate metal including a zinc atom which are measured by SP ICP-MS in the chemical fluid, and at least one of the concentration of particulate metal including an iron atom, the concentration of particulate metal including a copper atom, or the concentration of particulate metal including a zinc atom is reduced by using the selected reducing method.