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    Photodetector circuit comprising a compound semiconductor device on silicon
    1.
    发明授权
    Photodetector circuit comprising a compound semiconductor device on silicon 有权

    公开(公告)号：US11881498B2

    公开(公告)日：2024-01-23

    申请号：US17356208

    申请日：2021-06-23

    申请人： Aeluma, Inc.

    发明人： Jonathan Klamkin

    IPC分类号： H01L27/146 ,  H01L31/109 ,  H01L31/0352 ,  H01L31/0304

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/109

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    LIDAR SENSOR FOR VEHICLE APPARATUS
    2.
    发明申请
    LIDAR SENSOR FOR VEHICLE APPARATUS 有权

    公开(公告)号：US20220413156A1

    公开(公告)日：2022-12-29

    申请号：US17356261

    申请日：2021-06-23

    申请人： Aeluma, Inc.

    发明人： Jonathan Klamkin

    IPC分类号： G01S17/931 ,  G01S17/933 ,  G01S7/48 ,  H01S5/183

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for vehicle applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for vehicle apparatuses such as automobiles, boats, airplanes, and drones, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    Photodetector module comprising emitter and receiver
    3.
    发明授权
    Photodetector module comprising emitter and receiver 有权

    公开(公告)号：US11881490B2

    公开(公告)日：2024-01-23

    申请号：US18052097

    申请日：2022-11-02

    申请人： Aeluma, Inc.

    发明人： Jonathan Klamkin

    IPC分类号： H01L27/146 ,  G01S7/481 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/107

    CPC分类号： H01L27/1461 ,  G01S7/4813 ,  G01S7/4816 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14694 ,  H01L31/03042 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/1075

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    LIDAR SENSOR FOR MOBILE DEVICE
    4.
    发明申请
    LIDAR SENSOR FOR MOBILE DEVICE 有权

    公开(公告)号：US20220415950A1

    公开(公告)日：2022-12-29

    申请号：US17739971

    申请日：2022-05-09

    申请人： Aeluma, Inc.

    发明人： Jonathan KLAMKIN

    IPC分类号： H01L27/146 ,  H01L31/105 ,  H01L31/107 ,  G01S7/481 ,  G01S17/89

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates for mobile applications are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    PHOTODETECTOR CIRCUIT COMPRISING A COMPOUND SEMICONDUCTOR DEVICE ON SILICON
    5.
    发明公开
    PHOTODETECTOR CIRCUIT COMPRISING A COMPOUND SEMICONDUCTOR DEVICE ON SILICON 审中-公开

    公开(公告)号：US20240162270A1

    公开(公告)日：2024-05-16

    申请号：US18409639

    申请日：2024-01-10

    申请人： Aeluma, Inc.

    发明人： Jonathan KLAMKIN

    IPC分类号： H01L27/146 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/109

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L31/03046 ,  H01L31/035218 ,  H01L31/109

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    PHOTODETECTOR MODULE COMPRISING EMITTER AND RECEIVER
    6.
    发明申请
    PHOTODETECTOR MODULE COMPRISING EMITTER AND RECEIVER 有权

    公开(公告)号：US20230121546A1

    公开(公告)日：2023-04-20

    申请号：US18052097

    申请日：2022-11-02

    申请人： Aeluma, Inc.

    发明人： Jonathan KLAMKIN

    IPC分类号： H01L27/146 ,  G01S7/481

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    PHOTODETECTOR MODULE COMPRISING EMITTER AND RECEIVER
    7.
    发明申请
    PHOTODETECTOR MODULE COMPRISING EMITTER AND RECEIVER 有权

    公开(公告)号：US20230010538A1

    公开(公告)日：2023-01-12

    申请号：US17356282

    申请日：2021-06-23

    申请人： Aeluma, Inc.

    发明人： Jonathan Klamkin

    IPC分类号： H01L27/146 ,  G01S7/481

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    PHOTODETECTOR MODULE COMPRISING EMITTER AND RECEIVER
    9.
    发明公开
    PHOTODETECTOR MODULE COMPRISING EMITTER AND RECEIVER 审中-公开

    公开(公告)号：US20240162255A1

    公开(公告)日：2024-05-16

    申请号：US18408811

    申请日：2024-01-10

    申请人： Aeluma, Inc.

    发明人： Jonathan KLAMKIN

    IPC分类号： H01L27/146 ,  G01S7/481

    CPC分类号： H01L27/1461 ,  G01S7/4813 ,  G01S7/4816 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645 ,  H01L27/14689 ,  H01L27/14694 ,  H01L31/03042

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic module devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such module devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).

    PHOTODETECTOR CIRCUIT COMPRISING A COMPOUND SEMICONDUCTOR DEVICE ON SILICON
    10.
    发明申请
    PHOTODETECTOR CIRCUIT COMPRISING A COMPOUND SEMICONDUCTOR DEVICE ON SILICON 有权

    公开(公告)号：US20220415955A1

    公开(公告)日：2022-12-29

    申请号：US17356208

    申请日：2021-06-23

    申请人： Aeluma, Inc.

    发明人： Jonathan Klamkin

    IPC分类号： H01L27/146 ,  H01L31/109 ,  H01L31/0304 ,  H01L31/0352

    摘要： Techniques for realizing compound semiconductor (CS) optoelectronic devices on silicon (Si) substrates are disclosed. The integration platform is based on heteroepitaxy of CS materials and device structures on Si by direct heteroepitaxy on planar Si substrates or by selective area heteroepitaxy on dielectric patterned Si substrates. Following deposition of the CS device structures, device fabrication steps can be carried out using Si complimentary metal-oxide semiconductor (CMOS) fabrication techniques to enable large-volume manufacturing. The integration platform can enable manufacturing of optoelectronic devices including photodetector arrays for image sensors and vertical cavity surface emitting laser arrays. Such devices can be used in various applications including light detection and ranging (LIDAR) systems for automotive and robotic vehicles as well as mobile devices such as smart phones and tablets, and for other perception applications such as industrial vision, artificial intelligence (AI), augmented reality (AR) and virtual reality (VR).