公开(公告)号：US20120244699A1

公开(公告)日：2012-09-27

申请号：US13491191

申请日：2012-06-07

Applicant: AMIT KHANDELWAL ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

Inventor： AMIT KHANDELWAL ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

IPC: H01L21/285

CPC classification number: C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.

Abstract translation: 本发明的实施方案提供了一种沉积含钨材料的方法。 在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层 钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。 在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中 在约50sccm至约500sccm的范围内。

公开(公告)号：US20120003388A1

公开(公告)日：2012-01-05

申请号：US13169373

申请日：2011-06-27

Applicant: GWO-CHUAN TZU ,  XIAOXIONG YUAN ,  AMIT KHANDELWAL ,  BENJAMIN CHENG WANG ,  AVGERINOS V. GELATOS ,  KAI WU ,  MICHAEL P. KARAZIM ,  JING LIN ,  OLKAN CUVALCI

Inventor： GWO-CHUAN TZU ,  XIAOXIONG YUAN ,  AMIT KHANDELWAL ,  BENJAMIN CHENG WANG ,  AVGERINOS V. GELATOS ,  KAI WU ,  MICHAEL P. KARAZIM ,  JING LIN ,  OLKAN CUVALCI

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/46 ,  C23C16/52 ,  B05C11/00 ,  C23C16/458

CPC classification number: C23C16/4412 ,  C23C16/45565 ,  C23C16/45587 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/52

Abstract: A substrate support may include a body; an inner ring disposed about the body; an outer ring disposed about the inner ring forming a first opening therebetween; a first seal ring disposed above the first opening; a shadow ring disposed above the inner ring, extending inward from the outer ring and forming a second opening between the shadow and outer rings; a second seal ring disposed above the second opening; a space at least partially defined by the body and the inner, outer, first, second, and shadow rings; a first gap defined between a processing surface of a substrate when present and the shadow ring; and a plurality of second gaps fluidly coupled to the space; wherein the first gap and the plurality of second gaps are configured such that, when a substrate is present, a gas provided to the space flows out of the space through the first gap.

Abstract translation: 衬底支撑件可以包括主体; 围绕身体设置的内圈; 围绕所述内圈设置的外圈，在其间形成第一开口; 设置在所述第一开口上方的第一密封环; 设置在所述内圈上方的从所述外圈向内延伸并在所述阴影和外圈之间形成第二开口的阴影环; 设置在所述第二开口上方的第二密封环; 至少部分地由身体和内，外，第一，第二和第二和阴影环限定的空间; 限定在衬底的处理表面和阴影环之间的第一间隙; 以及流体耦合到所述空间的多个第二间隙; 其中所述第一间隙和所述多个第二间隙被配置为使得当存在基板时，设置到所述空间的气体通过所述第一间隙流出所述空间。

公开(公告)号：US08071478B2

公开(公告)日：2011-12-06

申请号：US12637864

申请日：2009-12-15

Applicant: Kai Wu ,  Amit Khandelwal ,  Averginos V. Gelatos

Inventor： Kai Wu ,  Amit Khandelwal ,  Averginos V. Gelatos

IPC: H01L21/44

CPC classification number: H01L21/76876 ,  C23C16/02 ,  C23C16/045 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/76861 ,  H01L21/76877

Abstract: A method of controlling the resistivity and morphology of a tungsten film is provided, comprising depositing a first film of a bulk tungsten layer on a substrate during a first deposition stage by (i) introducing a continuous flow of a reducing gas and a pulsed flow of a tungsten-containing compound to a process chamber to deposit tungsten on a surface of the substrate, (ii) flowing the reducing gas without flowing the tungsten-containing compound into the chamber to purge the chamber, and repeating steps (i) through (ii) until the first film fills vias in the substrate surface, increasing the pressure in the process chamber, and during a second deposition stage after the first deposition stage, depositing a second film of the bulk tungsten layer by providing a flow of reducing gas and tungsten-containing compound to the process chamber until a second desired thickness is deposited.

Abstract translation: 提供了一种控制钨膜的电阻率和形态的方法，包括：在第一沉积阶段，通过（i）引入连续流动的还原气体和脉冲流 将含钨化合物加入到处理室中，以沉积在基材表面上的钨，（ii）使还原气体流动，而不使含钨化合物流入室中以吹扫室，并重复步骤（i）至（ii） ），直到第一膜填充衬底表面中的通孔，增加处理室中的压力，并且在第一沉积阶段之后的第二沉积阶段期间，通过提供还原气体和钨的流动沉积体钨层的第二膜 包含化合物到处理室，直到沉积第二期望厚度。

公开(公告)号：US07964505B2

公开(公告)日：2011-06-21

申请号：US12121209

申请日：2008-05-15

Applicant: Amit Khandelwal ,  Madhu Moorthy ,  Avgerinog V. Gelatos ,  Kai Wu

Inventor： Amit Khandelwal ,  Madhu Moorthy ,  Avgerinog V. Gelatos ,  Kai Wu

IPC: H01L21/44

CPC classification number: C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.

Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用诸如原子层沉积（ALD）的浸泡工艺和气相沉积工艺来提供具有显着改善的表面均匀性和生产水平生产量的钨膜。 在一个实施例中，提供了一种用于在衬底上形成含钨材料的方法，其包括将衬底定位在处理室内，其中衬底包含设置在其上的底层，将衬底依次暴露于钨前体和还原气体 在ALD工艺期间，在底层上沉积钨成核层，其中还原气体含有约40:1,100:1,500:1,800:1,1,000:1或更高的氢氢化物流速比， 以及在钨成核层上沉积钨体层。 还原气体含有氢化物化合物，例如乙硼烷，硅烷或乙硅烷。

公开(公告)号：US07838441B2

公开(公告)日：2010-11-23

申请号：US12426815

申请日：2009-04-20

Applicant: Amit Khandelwal ,  Avgerinos V. Gelatos ,  Christophe Marcadal ,  Mei Chang

Inventor： Amit Khandelwal ,  Avgerinos V. Gelatos ,  Christophe Marcadal ,  Mei Chang

IPC: H01L21/768

CPC classification number: H01L21/28556 ,  H01L21/321 ,  H01L21/76843 ,  H01L21/76862

Abstract: In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.

Abstract translation: 在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层： 将衬底暴露于等离子体工艺。 在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。 在另一示例中，在第二氮化钛层上沉积第三氮化钛层。 随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。 在一个示例中，每个氮化钛层可以具有约15埃的厚度，氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

公开(公告)号：US20080268635A1

公开(公告)日：2008-10-30

申请号：US12111930

申请日：2008-04-29

Applicant: Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

Inventor： Sang-Ho Yu ,  Kevin Ti Moraes ,  Seshadri Ganguli ,  Hua Chung ,  See-Eng Phan ,  Amit Khandelwal ,  Kai Wu

IPC: H01L21/44

CPC classification number: C23C16/18 ,  C23C16/0227 ,  C23C16/08 ,  C23C16/42 ,  C23C16/4554 ,  C23C16/4586 ,  C23C16/56 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76877 ,  H01L29/665 ,  H01L29/78

Abstract: Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a cobalt silicide material on a substrate is provided which includes treating the substrate with at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material over the silicon-containing surface, and depositing a copper material over the cobalt silicide material. In another embodiment, a metallic cobalt material may be deposited over the cobalt silicide material prior to depositing the copper material. In one example, the copper material may be formed by depositing a copper seed layer and a copper bulk layer on the substrate. The copper seed layer may be deposited by a PVD process and the copper bulk layer may be deposited by an ECP process or an electroless deposition process.

Abstract translation: 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种在衬底上形成硅化钴材料的方法，其包括用至少一种预清洗方法处理衬底以暴露含硅表面，在含硅表面上沉积钴硅化物材料，以及沉积 在钴硅化物材料上的铜材料。 在另一个实施例中，在沉积铜材料之前，可以在钴硅化物材料上沉积金属钴材料。 在一个示例中，铜材料可以通过在基底上沉积铜籽晶层和铜体积层而形成。 铜种子层可以通过PVD工艺沉积，并且铜体积层可以通过ECP工艺或无电沉积工艺沉积。

公开(公告)号：US08563424B2

公开(公告)日：2013-10-22

申请号：US13456904

申请日：2012-04-26

Applicant: Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

Inventor： Seshadri Ganguli ,  Sang-Ho Yu ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC: H01L21/4763 ,  H01L21/44

CPC classification number: C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

Abstract: Methods for forming cobalt silicide are provided. One method for forming a cobalt silicide material includes exposing a substrate having a silicon-containing material to either a wet etch solution or a pre-clean plasma during a first step and then to a hydrogen plasma during a second step of a pre-clean process. The method further includes depositing a cobalt metal layer on the silicon-containing material by a CVD process, heating the substrate to form a first cobalt silicide layer comprising CoSi at the interface of the cobalt metal layer and the silicon-containing material during a first annealing process, removing any unreacted cobalt metal from the substrate during an etch process, and heating the substrate to form a second cobalt silicide layer comprising CoSi2 during a second annealing process.

Abstract translation: 提供了形成硅化钴的方法。 用于形成硅化钴材料的一种方法包括在第一步骤期间将具有含硅材料的衬底暴露于湿蚀刻溶液或预清洁等离子体，然后在预清洁过程的第二步骤期间暴露于氢等离子体 。 该方法还包括通过CVD工艺在含硅材料上沉积钴金属层，加热衬底以在第一退火期间在钴金属层和含硅材料的界面处形成包含CoSi的第一钴硅化物层 在蚀刻过程中从衬底去除任何未反应的钴金属，以及在第二退火过程中加热衬底以形成包含CoSi 2的第二钴硅化物层。

公开(公告)号：US08513116B2

公开(公告)日：2013-08-20

申请号：US13491191

申请日：2012-06-07

Applicant: Amit Khandelwal ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

Inventor： Amit Khandelwal ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

IPC: H01L21/285

CPC classification number: C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm.

Abstract translation: 本发明的实施方案提供了一种沉积含钨材料的方法。 在一个实施例中，一种方法包括在设置在衬底上的底层上形成钨成核层，同时在原子层沉积（ALD）工艺期间依次提供钨前体和还原气体到处理室中，并在其上沉积钨体积层 钨成核层，其中所述还原气体包含氢气和氢化物化合物（例如乙硼烷），并且具有约500:1或更高的氢/氢化物流速比。 在一些实例中，该方法包括以约1slm至约20slm的流速将氢气流入处理室，并将氢化物化合物和载气的混合物以流速流动到处理室中 在约50sccm至约500sccm的范围内。

公开(公告)号：US20090142474A1

公开(公告)日：2009-06-04

申请号：US12197049

申请日：2008-08-22

Applicant: Srinivas Gandikota ,  Madhu Moorthy ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Mei Chang ,  Kavita Shah ,  Seshadri Ganguli

Inventor： Srinivas Gandikota ,  Madhu Moorthy ,  Amit Khandelwal ,  Avgerinos V. Gelatos ,  Mei Chang ,  Kavita Shah ,  Seshadri Ganguli

IPC: B05D5/12

CPC classification number: H01L21/28556 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/45525 ,  C23C16/45529 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76876 ,  H01L21/76877 ,  Y10T428/12771 ,  Y10T428/12812 ,  Y10T428/12861 ,  Y10T428/12875

Abstract: Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.

Abstract translation: 本发明的实施例提供了一种在衬底上沉积材料的方法。 在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。 在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。 在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。 在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

公开(公告)号：US20090053893A1

公开(公告)日：2009-02-26

申请号：US12121209

申请日：2008-05-15

Applicant: Amit Khandelwal ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

Inventor： Amit Khandelwal ,  Madhu Moorthy ,  Avgerinos V. Gelatos ,  Kai Wu

IPC: H01L21/44

CPC classification number: C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45525 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/7687 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

Abstract: Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved surface uniformity and production level throughput. In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes positioning a substrate within a process chamber, wherein the substrate contains an underlayer disposed thereon, exposing the substrate sequentially to a tungsten precursor and a reducing gas to deposit a tungsten nucleation layer on the underlayer during an ALD process, wherein the reducing gas contains a hydrogen/hydride flow rate ratio of about 40:1, 100:1, 500:1, 800:1, 1,000:1, or greater, and depositing a tungsten bulk layer on the tungsten nucleation layer. The reducing gas contains a hydride compound, such as diborane, silane, or disilane.

Abstract translation: 本发明的实施方案提供了一种用于沉积含钨材料的改进方法。 该方法利用诸如原子层沉积（ALD）的浸泡工艺和气相沉积工艺来提供具有显着改善的表面均匀性和生产水平生产量的钨膜。 在一个实施例中，提供了一种用于在衬底上形成含钨材料的方法，其包括将衬底定位在处理室内，其中衬底包含设置在其上的底层，将衬底依次暴露于钨前体和还原气体 在ALD工艺期间，在底层上沉积钨成核层，其中还原气体含有约40:1,100:1,500:1,800:1,1,000:1或更高的氢氢化物流速比， 以及在钨成核层上沉积钨体层。 还原气体含有氢化物化合物，例如乙硼烷，硅烷或乙硅烷。