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235 条记录 (耗时 0.043 秒)

    Multi-layer polishing pad for low-pressure polishing
    1.
    发明授权
    Multi-layer polishing pad for low-pressure polishing 有权
    用于低压抛光的多层抛光垫

    公开(公告)号：US08066552B2

    公开(公告)日：2011-11-29

    申请号：US11043361

    申请日：2005-01-26

    申请人： Alain Duboust ,  Shou-Sung Chang ,  Wei Lu ,  Siew Neo ,  Yan Wang ,  Antoine P. Manens ,  Yongsik Moon

    发明人： Alain Duboust ,  Shou-Sung Chang ,  Wei Lu ,  Siew Neo ,  Yan Wang ,  Antoine P. Manens ,  Yongsik Moon

    IPC分类号： B24B29/00

    CPC分类号： B24B37/013 ,  B24B37/046 ,  B24B37/205 ,  B24B37/22 ,  B24B37/26 ,  B24D11/02

    摘要： A polishing pad has a polishing layer and a backing layer secured to the polishing layer. The polishing layer has a polishing surface, a first thickness, a first compressibility, and a hardness between about 40 to 80 Shore D. The backing layer has a second thickness and has a second compressibility greater than the first compressibility. The first thickness, first compressibility, second thickness and second compressibility are such that the polishing surface deflects more than the thickness non-uniformity of the polishing layer under an applied pressure of 1.5 psi or less.

    摘要翻译： 抛光垫具有固定到抛光层的抛光层和背衬层。 抛光层具有抛光表面，第一厚度，第一可压缩性和约40至80肖氏D之间的硬度。背衬层具有大于第一可压缩性的第二厚度并具有第二可压缩性。 第一厚度，第一可压缩性，第二厚度和第二可压缩性使得抛光表面在1.5psi或更小的施加压力下偏转大于抛光层的厚度不均匀性。

    Non-volatile solid state resistive switching devices
    7.
    发明授权
    Non-volatile solid state resistive switching devices 有权

    公开(公告)号：US10134985B2

    公开(公告)日：2018-11-20

    申请号：US11875541

    申请日：2007-10-19

    申请人： Wei Lu ,  Sung Hyun Jo

    发明人： Wei Lu ,  Sung Hyun Jo

    IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

    摘要： Non-crystalline silicon non-volatile resistive switching devices include a metal electrode, a non-crystalline silicon layer and a planar doped silicon electrode. An electrical signal applied to the metal electrode drives metal ions from the metal electrode into the non-crystalline silicon layer to form a conducting filament from the metal electrode to the planar doped silicon electrode to alter a resistance of the non-crystalline silicon layer. Another electrical signal applied to the metal electrode removes at least some of the metal ions forming the conducting filament from the non-crystalline silicon layer to further alter the resistance of the non-crystalline silicon layer.

    Solvent-based methods for production of graphene nanoribbons
    9.
    发明授权
    Solvent-based methods for production of graphene nanoribbons 有权
    用于生产石墨烯纳米带的基于溶剂的方法

    公开(公告)号：US09493355B2

    公开(公告)日：2016-11-15

    申请号：US14345016

    申请日：2012-09-14

    申请人： James M. Tour ,  Wei Lu ,  Bostjan Genorio

    发明人： James M. Tour ,  Wei Lu ,  Bostjan Genorio

    IPC分类号： C01B31/02 ,  C07C29/32 ,  C08F112/08 ,  C01B31/04

    CPC分类号： C08F112/08 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B32/178 ,  C01B32/18 ,  C01B32/184 ,  C01B32/194 ,  C01B2202/06 ,  C01B2204/06 ,  C07C2/76 ,  C07C15/56 ,  C07C29/32 ,  C07C67/035 ,  C07C69/76 ,  D01F9/12 ,  Y10S977/734 ,  Y10S977/846 ,  Y10S977/961

    摘要： The present invention provides methods of preparing functionalized graphene nanoribbons. Such methods include: (1) exposing a plurality of carbon nanotubes (CNTs) to an alkali metal source in the presence of an aprotic solvent to open them; and (2) exposing the opened CNTs to an electrophile to form functionalized graphene nanoribbons (GNRs). The methods may also include a step of exposing the opened CNTs to a protic solvent to quench any reactive species on them. Additional methods include preparing unfunctionalized GNRs by: (1) exposing a plurality of CNTs to an alkali metal source in the presence of an aprotic solvent to open them; and (2) exposing the opened CNTs to a protic solvent to form unfunctionalized GNRs.

    摘要翻译： 本发明提供了制备官能化石墨烯纳米带的方法。 这些方法包括：（1）在非质子溶剂的存在下将多个碳纳米管（CNT）暴露于碱金属源以将其打开; 和（2）将开放的CNT暴露于亲电子试剂以形成官能化的石墨烯纳米带（GNR）。 所述方法还可以包括将开放的CNT暴露于质子溶剂以淬灭其上的任何反应性物质的步骤。 另外的方法包括：通过以下步骤制备未官能化的GNR：（1）在非质子溶剂存在下将多个CNT暴露于碱金属源以打开它们; 和（2）将开放的CNT暴露于质子溶剂以形成未官能化的GNR。

    METHODS AND APPARATUS FOR INDIVIDUALLY OPTIMIZING UNIFORM CONTRAST ENHANCEMENTS IN COMPUTED TOMOGRAPHY IMAGING
    10.
    发明申请
    METHODS AND APPARATUS FOR INDIVIDUALLY OPTIMIZING UNIFORM CONTRAST ENHANCEMENTS IN COMPUTED TOMOGRAPHY IMAGING 有权
    在计算机图像成像中单独优化均匀对比增强的方法和装置

    公开(公告)号：US20150324979A1

    公开(公告)日：2015-11-12

    申请号：US14710052

    申请日：2015-05-12

    申请人： Ming Xue ,  Wei Lu ,  Seth Kligerman ,  Hao Zhang ,  Warren D'Souza ,  Wookjin Choi

    发明人： Ming Xue ,  Wei Lu ,  Seth Kligerman ,  Hao Zhang ,  Warren D'Souza ,  Wookjin Choi

    IPC分类号： G06T7/00 ,  G06T11/00

    CPC分类号： A61B6/545 ,  A61B6/032 ,  A61B6/481 ,  A61B6/486 ,  A61B6/504 ,  G06T7/0012 ,  G06T11/006 ,  G06T2207/10081 ,  G06T2207/20104 ,  G06T2207/30101 ,  G06T2211/404

    摘要： A method is provided for optimizing a contrast injection function for CT imaging. The method includes injecting, with an injector pump, a test bolus of a contrast agent into a subject. The method also includes computing, on a processor, an impulse enhancement function. The method also includes determining, on a processor, a target enhancement function for a region of interest. The method also includes determining, with a processor, a plurality of parameters for a functional form for a contrast injection function in a time domain. The method also includes determining for the contrast injection function a constraint. The method also includes determining, with a processor, particular values for the plurality of parameters, which satisfy the constraint and minimize a difference between a value of an enhancement function and the target enhancement function computed in the time domain at discrete time periods without use of a Fourier transform.

    摘要翻译： 提供了一种用于优化CT成像的造影剂注射功能的方法。 该方法包括用注射器泵将造影剂的测试团注入受试者。 该方法还包括在处理器上计算脉冲增强功能。 该方法还包括在处理器上确定感兴趣区域的目标增强功能。 该方法还包括使用处理器确定用于时域中的对比度注入功能的功能形式的多个参数。 该方法还包括确定对比度注入功能的约束。 该方法还包括使用处理器确定满足约束的多个参数的特定值，并且使离散时间段内在增强函数的值和在时域中计算的目标增强函数之间的差最小化，而不使用 傅立叶变换。