公开(公告)号：US20130105960A1

公开(公告)日：2013-05-02

申请号：US13281548

申请日：2011-10-26

Applicant: Patrick Jones ,  Andre Christmann ,  Daniel Domes

Inventor： Patrick Jones ,  Andre Christmann ,  Daniel Domes

IPC: H01L23/48

CPC classification number: H01L25/07 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

Abstract translation: 功率模块包括在绝缘构件上包括绝缘构件和图案化金属化的衬底。 图案化金属化被分割成多个间隔开的金属化区域。 相邻的金属化区域被延伸通过图案化金属化的凹槽分隔成绝缘构件。 第一功率晶体管电路包括附接到第一金属化区域的第一功率开关和附接到第一金属化区域的第一侧附近的第二金属化区域的第二功率开关。 第二功率晶体管电路包括附接到第一金属化区域的第三电力开关和附接到与第一侧相对的第一金属化区域的第二侧附近的第三金属化区域的第四电力开关。 第二功率晶体管电路反射第一功率晶体管电路。

公开(公告)号：US08637964B2

公开(公告)日：2014-01-28

申请号：US13281548

申请日：2011-10-26

Applicant: Patrick Jones ,  Andre Christmann ,  Daniel Domes

Inventor： Patrick Jones ,  Andre Christmann ,  Daniel Domes

IPC: H01R9/00 ,  H01L31/119

CPC classification number: H01L25/07 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05553 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A power module includes a substrate including an insulating member and a patterned metallization on the insulating member. The patterned metallization is segmented into a plurality of spaced apart metallization regions. Adjacent ones of the metallization regions are separated by a groove which extends through the patterned metallization to the insulating member. A first power transistor circuit includes a first power switch attached to a first one of the metallization regions and a second power switch attached to a second one of the metallization regions adjacent a first side of the first metallization region. A second power transistor circuit includes a third power switch attached to the first metallization region and a fourth power switch attached to a third one of the metallization regions adjacent a second side of the first metallization region which opposes the first side. The second power transistor circuit mirrors the first power transistor circuit.

Abstract translation: 功率模块包括在绝缘构件上包括绝缘构件和图案化金属化的衬底。 图案化金属化被分割成多个间隔开的金属化区域。 相邻的金属化区域被延伸通过图案化金属化的凹槽分隔成绝缘构件。 第一功率晶体管电路包括附接到第一金属化区域的第一功率开关和附接到第一金属化区域的第一侧附近的第二金属化区域的第二功率开关。 第二功率晶体管电路包括附接到第一金属化区域的第三电力开关和附接到与第一侧相对的第一金属化区域的第二侧附近的第三金属化区域的第四电力开关。 第二功率晶体管电路反射第一功率晶体管电路。

公开(公告)号：US20120235293A1

公开(公告)日：2012-09-20

申请号：US13048466

申请日：2011-03-15

Applicant: Patrick Jones ,  Andre Christmann

Inventor： Patrick Jones ,  Andre Christmann

IPC: H01L23/473 ,  H01L21/58 ,  H01L23/34

CPC classification number: H01L23/473 ,  H01L23/043 ,  H01L23/24 ,  H01L23/296 ,  H01L23/3735 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L25/072 ,  H01L2224/131 ,  H01L2224/29111 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/73265 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/12043 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01082 ,  H01L2924/00015 ,  H01L2924/01029 ,  H01L2224/83205

Abstract: A semiconductor device includes a semiconductor chip and a base plate coupled to the semiconductor chip. The base plate includes an upper portion and a lower portion. The upper portion has a bottom surface intersecting a sidewall of the lower portion. The semiconductor device includes a cooling element coupled to the base plate. The cooling element has a first surface directly contacting the bottom surface of the upper portion of the base plate, a second surface directly contacting the sidewall of the lower portion of the base plate, and a third surface parallel to the first surface and aligned with a bottom surface of the lower portion of the base plate.

Abstract translation: 半导体器件包括半导体芯片和耦合到半导体芯片的基板。 基板包括上部和下部。 上部具有与下部的侧壁相交的底面。 半导体器件包括耦合到基板的冷却元件。 冷却元件具有直接接触基板的上部的底面的第一表面，与基板的下部的侧壁直接接触的第二表面和与第一表面平行的第三表面，并且与第一表面对准 底板下部的底面。