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公开(公告)号：US07763150B2
公开(公告)日：2010-07-27
申请号：US10583124
申请日：2004-11-29
申请人： Bernd Szyszka , Andreas Pflug
发明人： Bernd Szyszka , Andreas Pflug
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , C03C17/002 , C03C17/2456 , C03C2217/212 , C03C2218/156 , C23C14/083 , C23C14/35 , C23C14/542 , C23C14/562 , H01J37/3405 , H01J37/3491
摘要： A method and device for magnetron sputtering are provided. A magnetron coating system includes a first coating source and an auxiliary substrate arranged between the first coating source and an area into which a substrate to be coated is to be received. The system also includes a magnetron having a cathode composed of the auxiliary substrate. Additionally, the system includes a device structured and arranged to determine an area density of the auxiliary substrate.
摘要翻译： 提供了一种用于磁控溅射的方法和装置。 磁控管涂覆系统包括第一涂料源和辅助基材，其被布置在第一涂料源和要被涂覆的基材待接收的区域之间。 该系统还包括具有由辅助衬底组成的阴极的磁控管。 另外，该系统包括构造和布置成确定辅助基板的面积密度的装置。
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公开(公告)号：US20050236276A1
公开(公告)日：2005-10-27
申请号：US10996812
申请日：2004-11-24
申请人： Albert Kastner , Michael Geisler , Thomas Leipnitz , Jurgen Bruch , Andreas Pflug , Bernd Szyszka
发明人： Albert Kastner , Michael Geisler , Thomas Leipnitz , Jurgen Bruch , Andreas Pflug , Bernd Szyszka
IPC分类号： H01L21/203 , C23C14/00 , C23C14/34 , C23C14/54 , C23C14/56 , H01L21/00 , H01L21/285 , C25D5/00
CPC分类号： C23C14/34 , C23C14/0042 , C23C14/542 , C23C14/56
摘要： A method for coating substrates in inline installations, in which a substrate is moved through at least one coating chamber and during this movement is coated. In this method, first, a model of the coating chamber is formed which takes into consideration the changes of the chamber parameters caused by the movement of the substrate through the coating chamber. Subsequently, the particular position of the substrate within the coating chamber is acquired. The chamber parameters are subsequently set based on the position of the substrate according to the model of the coating chambers.
摘要翻译： 一种在线安装中涂覆基材的方法，其中基底移动通过至少一个涂布室，并且在该运动期间被涂覆。 在该方法中，首先，形成涂覆室的模型，其考虑由基板通过涂覆室的运动引起的室参数的变化。 随后，获取涂层室内基材的特定位置。 随后根据涂层室的模型基于基板的位置来设定腔室参数。
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公开(公告)号：US20120097529A1
公开(公告)日：2012-04-26
申请号：US13138810
申请日：2010-03-25
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , C23C14/0036 , C23C14/56
摘要： The invention relates to a new basic technology for magnetron sputtering of ceramic layers, in particular for optical applications. The new concept enables the construction of magnetron sputtering sources which, in comparison with the known methods, such as reactive DC-, MF- or RF magnetron sputtering or the magnetron sputtering of ceramic targets, enables significantly improved precision in the deposition of ceramic layers at an exactly defined rate and homogeneity and also with very good reproducibility.
摘要翻译： 本发明涉及用于陶瓷层的磁控溅射的新的基本技术，特别是用于光学应用。 新概念使得能够构建磁控溅射源，与已知方法相比，诸如反应型DC-，MF-或RF磁控溅射或陶瓷靶的磁控溅射，可以显着提高陶瓷层沉积精度 精确定义的速率和均匀性，并具有非常好的重现性。
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公开(公告)号：US20070158177A1
公开(公告)日：2007-07-12
申请号：US10583124
申请日：2004-11-29
申请人： Bernd Szyszka , Andreas Pflug
发明人： Bernd Szyszka , Andreas Pflug
CPC分类号： C23C14/352 , C03C17/002 , C03C17/2456 , C03C2217/212 , C03C2218/156 , C23C14/083 , C23C14/35 , C23C14/542 , C23C14/562 , H01J37/3405 , H01J37/3491
摘要： The invention relates to a magnetron coating system, comprising a first coating source, an auxiliary substrate, a magnetron and means for determining the area density of the auxiliary substrate. The auxiliary substrate is thereby arranged between the first coating source and the area that is provided to receive the substrate to be coated, and forms a cathode for the magnetron. The invention further relates to a method for depositing thin layers, in which a layer is deposited on an auxiliary substrate by means of a first coating source and this auxiliary substrate is used as a cathode for coating a substrate by means of a magnetron and the area density of the auxiliary substrate is determined.
摘要翻译： 本发明涉及一种磁控管涂覆系统，包括第一涂层源，辅助衬底，磁控管以及用于确定辅助衬底的面积密度的装置。 因此，辅助基板被布置在第一涂覆源和被设置为接收待涂覆的基板的区域之间，并且形成用于磁控管的阴极。 本发明还涉及一种用于沉积薄层的方法，其中通过第一涂层源将层沉积在辅助衬底上，并且该辅助衬底用作通过磁控管涂覆衬底的阴极和区域 确定辅助基板的密度。
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公开(公告)号：US20120097641A1
公开(公告)日：2012-04-26
申请号：US13127497
申请日：2009-11-04
申请人： Rudolf Beckmann , Michael Geisler , Arndt Zeuner , Marks Fiedler , Gunter Grabosch , Andreas Pflug , Uwe Czarnetzki , Ralf-Peter Brinkmann , Michael Siemers
发明人： Rudolf Beckmann , Michael Geisler , Arndt Zeuner , Marks Fiedler , Gunter Grabosch , Andreas Pflug , Uwe Czarnetzki , Ralf-Peter Brinkmann , Michael Siemers
CPC分类号： H01J37/32165 , H01J37/32091
摘要： Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114) between the surface area to be treated and the electrode has a linear extension dp, where dp
摘要翻译： 用于等离子体装置中的基板的等离子体处理的方法和装置，其中 - 所述基板（110）布置在电极（112）和相对电极（108）之间，所述电极与对电极（108）之间的距离为d， 并且电极 - 电容耦合等离子体放电被激发，在电极（112）和对电极（108）之间形成DC自偏压，在等离子体放电的面积为 存在电极，其具有准中等离子体体积（114），一定量的待处理衬底的表面积经受的至少一种可活化气体种类，其条件是等离子体放电被激发， - 其中距离d具有与s = se + sg相当的值，其中se表示电极前面的等离子体边界层（119）的厚度，sg表示前面的等离子体边界层（118）的厚度 的待处理基材表面或其中 在待处理表面积和电极之间的准中性等离子体体积（114）中具有线性延伸dp，其中dp <1dd，dp
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公开(公告)号：US20050145487A1
公开(公告)日：2005-07-07
申请号：US10511389
申请日：2003-04-11
CPC分类号： H01J37/34 , H01J37/3447
摘要： The invention relates to a coating installation comprising a recipient (1) which is divided into a cathode side (3) and a substrate side (4) by means of a screen (2). The cathode side (3) and the substrate side (4) respectively have a direct extraction outlet (10, 16) and a gas admission (8, 14). The gas admission (8) on the cathode side (3) is connected to a process gas source (9) and the gas admission (14) for the substrate side (4) is connected to a reactive gas source (15).
摘要翻译： 本发明涉及一种涂层装置，其包括借助于屏幕（2）被分为阴极侧（3）和基板侧（4）的接收器（1）。 阴极侧（3）和基板侧（4）分别具有直接提取出口（10,16）和气体入口（8,14）。 阴极侧（3）上的气体进入（8）连接到处理气体源（9），并且用于基板侧（4）的气体进入（14）连接到反应气体源（15）。
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