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公开(公告)号：US20050145487A1
公开(公告)日：2005-07-07
申请号：US10511389
申请日：2003-04-11
CPC分类号： H01J37/34 , H01J37/3447
摘要： The invention relates to a coating installation comprising a recipient (1) which is divided into a cathode side (3) and a substrate side (4) by means of a screen (2). The cathode side (3) and the substrate side (4) respectively have a direct extraction outlet (10, 16) and a gas admission (8, 14). The gas admission (8) on the cathode side (3) is connected to a process gas source (9) and the gas admission (14) for the substrate side (4) is connected to a reactive gas source (15).
摘要翻译： 本发明涉及一种涂层装置，其包括借助于屏幕（2）被分为阴极侧（3）和基板侧（4）的接收器（1）。 阴极侧（3）和基板侧（4）分别具有直接提取出口（10,16）和气体入口（8,14）。 阴极侧（3）上的气体进入（8）连接到处理气体源（9），并且用于基板侧（4）的气体进入（14）连接到反应气体源（15）。
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公开(公告)号：US20130203211A1
公开(公告)日：2013-08-08
申请号：US13519030
申请日：2010-12-23
IPC分类号： H01L21/768 , H01L31/02
CPC分类号： H01L21/768 , C23C14/024 , C23C14/086 , C23C14/5873 , H01L31/02016 , H01L31/022483 , H01L31/1884 , Y02E10/50
摘要： A method coats a substrate with an aluminum-doped zinc oxide. The method includes generating a nucleation coating between 5 nm and 400 nm thick and having zinc oxide or doped zinc oxide, in particular aluminum-doped zinc oxide, on a surface of a substrate by atomizing a solid target. A quasi-epitaxially propagating top coating is generated and contains an aluminum-doped zinc oxide on the nucleation coating and the top coating is wet chemically etched.
摘要翻译： 一种方法用掺铝的氧化锌涂覆衬底。 该方法包括通过雾化固体靶而在衬底的表面上产生5nm至400nm厚的成核层，并且具有氧化锌或掺杂的氧化锌，特别是掺铝的氧化锌。 产生准外推扩展的顶涂层，并在成核涂层上含有掺铝的氧化锌，并且顶部涂层被湿化学蚀刻。
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公开(公告)号：US20070158177A1
公开(公告)日：2007-07-12
申请号：US10583124
申请日：2004-11-29
申请人： Bernd Szyszka , Andreas Pflug
发明人： Bernd Szyszka , Andreas Pflug
CPC分类号： C23C14/352 , C03C17/002 , C03C17/2456 , C03C2217/212 , C03C2218/156 , C23C14/083 , C23C14/35 , C23C14/542 , C23C14/562 , H01J37/3405 , H01J37/3491
摘要： The invention relates to a magnetron coating system, comprising a first coating source, an auxiliary substrate, a magnetron and means for determining the area density of the auxiliary substrate. The auxiliary substrate is thereby arranged between the first coating source and the area that is provided to receive the substrate to be coated, and forms a cathode for the magnetron. The invention further relates to a method for depositing thin layers, in which a layer is deposited on an auxiliary substrate by means of a first coating source and this auxiliary substrate is used as a cathode for coating a substrate by means of a magnetron and the area density of the auxiliary substrate is determined.
摘要翻译： 本发明涉及一种磁控管涂覆系统，包括第一涂层源，辅助衬底，磁控管以及用于确定辅助衬底的面积密度的装置。 因此，辅助基板被布置在第一涂覆源和被设置为接收待涂覆的基板的区域之间，并且形成用于磁控管的阴极。 本发明还涉及一种用于沉积薄层的方法，其中通过第一涂层源将层沉积在辅助衬底上，并且该辅助衬底用作通过磁控管涂覆衬底的阴极和区域 确定辅助基板的密度。
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4.发明申请Method for controlling a reactive-high-power pulsed magnetron sputter process and corresponding device 审中-公开用于控制无功高功率脉冲磁控溅射工艺的方法及相应的器件公开(公告)号：US20100282598A1
公开(公告)日：2010-11-11
申请号：US12308589
申请日：2007-06-20
申请人： Florian Ruske , Volker Sittinger , Bernd Szyszka
发明人： Florian Ruske , Volker Sittinger , Bernd Szyszka
IPC分类号： C23C14/34
CPC分类号： C23C14/0036 , C23C14/0042 , C23C14/086 , C23C14/3421 , C23C14/544 , H01J37/34 , H01J37/3405 , H01J37/3444 , H01J37/3467
摘要： The invention relates to the control of a reactive high-power pulsed sputter process. The invention particularly relates to a method for controlling a process of the aforementioned kind, wherein a controlled variable is measured and an adjustable variable is modified based on the measured controlled variable in order to adjust the controlled variable to a predetermined setting value. The method according to the invention is characterised by modifying the discharge capacity by varying the pulse frequency of the discharge.
摘要翻译： 本发明涉及反应性大功率脉冲溅射工艺的控制。 本发明特别涉及一种用于控制上述类型的方法，其中测量受控变量并且基于所测量的受控变量修改可调节变量，以将受控变量调整到预定设定值。 根据本发明的方法的特征在于通过改变放电的脉冲频率来改变放电容量。
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公开(公告)号：US06797128B1
公开(公告)日：2004-09-28
申请号：US10148099
申请日：2002-07-29
申请人： Bernd Szyszka , Niels Malkomes
发明人： Bernd Szyszka , Niels Malkomes
IPC分类号： C23C1434
CPC分类号： H01J37/32935 , C23C14/0042
摘要： The invention relates to a method for regulating MF or HF sputtering processes, a harmonic analysis of the electrical discharge parameters being implemented and the MF or HF output and/or the reactive gas flow being regulated on the basis of the analysis results.
摘要翻译： 本发明涉及一种用于调节MF或HF溅射工艺的方法，正在实施的放电参数的谐波分析和MF或HF输出和/或基于分析结果调节的反应气流。
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公开(公告)号：US08557390B2
公开(公告)日：2013-10-15
申请号：US12997231
申请日：2009-06-09
申请人： Thomas Drescher , Bernd Hangleiter , Joachim Schuetz , Annegret Matthai , Heike Walter , Felix Horstmann , Bernd Szyszka , Volker Sittinger , Wolfgang Werner , Tjhay Weyna Boentoro
发明人： Thomas Drescher , Bernd Hangleiter , Joachim Schuetz , Annegret Matthai , Heike Walter , Felix Horstmann , Bernd Szyszka , Volker Sittinger , Wolfgang Werner , Tjhay Weyna Boentoro
IPC分类号： B32B17/06
CPC分类号： C23C14/086 , C03C17/3417 , C03C17/3435 , C03C2217/948 , C03C2218/156 , H01J37/3467 , Y02T50/67
摘要： The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2,—the pulses of the magnetron have a time duration that is ≦200 μs, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ≦0.025 ms is at least 106 Λ(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.5 degrees, in the direction of compressive stress and is shifted after heat treatment by a maximum of 1 degree, preferably by 0.2 degrees to 0.4 degrees, in the direction of the powder spectrum.
摘要翻译： 玻璃制品技术领域本发明涉及一种玻璃制品，其包括具有透明导电性铟锡氧化物层的玻璃基板，其具有覆盖层，其形成用于氧化铟锡层的氧化还原屏障，其中所述氧化铟锡层通过脉冲， 高电离大功率磁控溅射（HPPMS），其中磁控管的脉冲具有大于1.5kW / cm 2的峰值功率密度，磁控管的脉冲持续时间为200微米，平均值为 在0.025ms的时间间隔内等离子体点燃时的电流流动密度上升至少为106λ（mscm 2），并且氧化铟锡层具有晶体结构，使得（222） - 反射 在氧化铟锡层的制造之后的X射线衍射光谱相对于氧化铟锡的粉末光谱在压缩应力方向上偏移最多为1度，优选为0.3度至0.5度，并且为 转移了 在粉末光谱的方向上进行最多1度，优选0.2度至0.4度的热处理。
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7.发明申请公开(公告)号：US20120325295A1
公开(公告)日：2012-12-27
申请号：US13460499
申请日：2012-04-30
IPC分类号： H01L31/0232 , H01L31/04
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/1884 , Y02E10/548
摘要： An arrangement includes a transparent substrate, at least one transparent electrically conductive layer on the substrate. At least one photoelectric device for converting radiation energy into electrical energy can be arranged on the at least one transparent electrically conductive layer. The at least one transparent electrically conductive layer includes at least one first transparent electrically conductive layer and at least one second transparent electrically conductive layer.
摘要翻译： 一种布置包括透明衬底，在衬底上的至少一个透明导电层。 至少一个用于将辐射能转换为电能的光电装置可以布置在至少一个透明导电层上。 至少一个透明导电层包括至少一个第一透明导电层和至少一个第二透明导电层。
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公开(公告)号：US20120097529A1
公开(公告)日：2012-04-26
申请号：US13138810
申请日：2010-03-25
IPC分类号： C23C14/35
CPC分类号： C23C14/352 , C23C14/0036 , C23C14/56
摘要： The invention relates to a new basic technology for magnetron sputtering of ceramic layers, in particular for optical applications. The new concept enables the construction of magnetron sputtering sources which, in comparison with the known methods, such as reactive DC-, MF- or RF magnetron sputtering or the magnetron sputtering of ceramic targets, enables significantly improved precision in the deposition of ceramic layers at an exactly defined rate and homogeneity and also with very good reproducibility.
摘要翻译： 本发明涉及用于陶瓷层的磁控溅射的新的基本技术，特别是用于光学应用。 新概念使得能够构建磁控溅射源，与已知方法相比，诸如反应型DC-，MF-或RF磁控溅射或陶瓷靶的磁控溅射，可以显着提高陶瓷层沉积精度 精确定义的速率和均匀性，并具有非常好的重现性。
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公开(公告)号：US20110223415A1
公开(公告)日：2011-09-15
申请号：US12997231
申请日：2009-06-09
申请人： Thomas Drescher , Bernd Hangleiter , Joachim Schuetz , Annegret Matthai , Heike Walter , Felix Horstmann , Bernd Szyszka , Volker Sittinger , Wolfgang Werner , Tjhay Weyna Boentoro
发明人： Thomas Drescher , Bernd Hangleiter , Joachim Schuetz , Annegret Matthai , Heike Walter , Felix Horstmann , Bernd Szyszka , Volker Sittinger , Wolfgang Werner , Tjhay Weyna Boentoro
CPC分类号： C23C14/086 , C03C17/3417 , C03C17/3435 , C03C2217/948 , C03C2218/156 , H01J37/3467 , Y02T50/67
摘要： The present invention relates to a glass product, comprising a glass substrate with a transparent and conductive indium tin oxide layer having a covering layer, which forms a redox barrier for the indium tin oxide layer, wherein the indium tin oxide layer is obtained by pulsed, highly ionizing high-power magnetron sputtering (HPPMS) in which—the pulses of the magnetron have a peak power density greater than 1.5 kW/cm2, —the pulses of the magnetron have a time duration that is ≦200 μs, and—the mean current flow density rise upon ignition of the plasma within a time interval that is ≦0.025 ms is at least 106 Λ(ms cm2), and the indium tin oxide layer has a crystalline structure, in such a way that the (222)-reflection of an X-ray diffraction spectrum after the production of the indium tin oxide layer is shifted relative to the powder spectrum of indium tin oxide by a maximum of 1 degree, preferably by 0.3 degrees to 0.5 degrees, in the direction of compressive stress and is shifted after heat treatment by a maximum of 1 degree, preferably by 0.2 degrees to 0.4 degrees, in the direction of the powder spectrum.
摘要翻译： 玻璃制品技术领域本发明涉及一种玻璃制品，其包括具有透明导电性铟锡氧化物层的玻璃基板，其具有覆盖层，其形成用于氧化铟锡层的氧化还原屏障，其中所述氧化铟锡层通过脉冲， 高电离大功率磁控溅射（HPPMS），其中磁控管的脉冲具有大于1.5kW / cm 2的峰值功率密度，磁控管的脉冲具有的时间长度为200微秒，而 - 在等离子体点火之后的平均电流流动密度上升为0.025ms至少为106Λ（mscm 2），并且氧化铟锡层具有晶体结构，使得（222） 在制造铟锡氧化物层之后的X射线衍射光谱的反射相对于氧化铟锡的粉末光谱在压缩应力方向上偏移最多1度，优选0.3度至0.5度 和我 在粉末光谱的方向上热处理后最多移动1度，优选0.2度至0.4度。
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10.发明授权Method for producing a transparent and conductive metal oxide layer by highly ionized pulsed magnetron sputtering 有权通过高电离脉冲磁控溅射法生产透明导电金属氧化物层的方法公开(公告)号：US09039872B2
公开(公告)日：2015-05-26
申请号：US12997712
申请日：2009-06-09
申请人： Felix Horstmann , Volker Sittinger , Bernd Szyszka
发明人： Felix Horstmann , Volker Sittinger , Bernd Szyszka
CPC分类号： C23C14/5806 , C23C14/086 , C23C14/3485 , C23C14/3492 , C23C14/35 , H01J37/3467
摘要： A method for producing a transparent and conductive metal oxide layer on a substrate, includes atomizing at least one component of the metal oxide layer by highly ionized, high power pulsed magnetron sputtering to condense on the substrate. The pulses of the magnetron have a peak power density of more than 1.5 kW/cm2, the pulses of the magnetron have a duration of ≦200 μs, and the average increase in current density during ignition of the plasma within an interval, which is ≦0.025 ms, is at least 106 A/(ms cm2).
摘要翻译： 一种在基板上制造透明导电金属氧化物层的方法，包括通过高电离，高功率的脉冲磁控溅射使金属氧化物层的至少一个成分雾化，从而在基板上冷凝。 磁控管的脉冲具有大于1.5kW / cm 2的峰值功率密度，磁控管的脉冲持续时间为＆nlE;200μs，等离子体点燃期间的电流密度的平均增加在间隔内，即 ＆nlE; 0.025 ms，至少为106 A /（ms cm2）。
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