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    SYSTEM AND METHOD TO DIVIDE FLUID FLOW IN A PREDETERMINED RATIO
    1.
    发明申请
    SYSTEM AND METHOD TO DIVIDE FLUID FLOW IN A PREDETERMINED RATIO 有权
    流体流量在预测比例中的系统和方法

    公开(公告)号：US20080115834A1

    公开(公告)日：2008-05-22

    申请号：US11561864

    申请日：2006-11-20

    申请人： Bruno Geoffrion ,  Mark Adam Crocket

    发明人： Bruno Geoffrion ,  Mark Adam Crocket

    IPC分类号： G05D11/13

    CPC分类号： G05D11/132 ,  Y10T137/0363 ,  Y10T137/87249 ,  Y10T137/8729 ,  Y10T137/87298

    摘要： A system and method for dividing the flow of one or more process fluids in a predetermined flow ratio is provided herein. In one embodiment, a system for dividing flow of one or more process fluids in a predetermined flow ratio includes a process chamber having a plurality of inlets for delivering one or more process fluids into the process chamber; a plurality of modulating valves coupled to the plurality of inlets, wherein each inlet of the plurality of inlets is coupled to at least one modulating valve; and a controller coupled to the plurality of modulating valves, the controller configured to control the operation of the plurality of modulating valves to divide the flow of one or more process fluids in the predetermined flow ratio.

    摘要翻译： 本发明提供一种以预定流量比划分一种或多种工艺流体的流动的系统和方法。 在一个实施例中，用于以预定流量比分配一个或多个过程流体的流动的系统包括具有多个入口的处理室，用于将一个或多个过程流体输送到处理室中; 耦合到所述多个入口的多个调节阀，其中所述多个入口中的每个入口联接到至少一个调节阀; 以及耦合到所述多个调节阀的控制器，所述控制器被配置为控制所述多个调节阀的操作以按预定流量比划分一个或多个过程流体的流动。

    System and method to divide fluid flow in a predetermined ratio
    2.
    发明授权
    System and method to divide fluid flow in a predetermined ratio 有权
    以预定的比例分配流体流的系统和方法

    公开(公告)号：US09405298B2

    公开(公告)日：2016-08-02

    申请号：US11561864

    申请日：2006-11-20

    申请人： Bruno Geoffrion ,  Mark Adam Crocket

    发明人： Bruno Geoffrion ,  Mark Adam Crocket

    IPC分类号： G05D11/13

    CPC分类号： G05D11/132 ,  Y10T137/0363 ,  Y10T137/87249 ,  Y10T137/8729 ,  Y10T137/87298

    摘要： A system and method for dividing the flow of one or more process fluids in a predetermined flow ratio is provided herein. In one embodiment, a system for dividing flow of one or more process fluids in a predetermined flow ratio includes a process chamber having a plurality of inlets for delivering one or more process fluids into the process chamber; a plurality of modulating valves coupled to the plurality of inlets, wherein each inlet of the plurality of inlets is coupled to at least one modulating valve; and a controller coupled to the plurality of modulating valves, the controller configured to control the operation of the plurality of modulating valves to divide the flow of one or more process fluids in the predetermined flow ratio.

    摘要翻译： 本发明提供一种以预定流量比划分一种或多种工艺流体的流动的系统和方法。 在一个实施例中，用于以预定流量比分配一个或多个过程流体的流动的系统包括具有多个入口的处理室，用于将一个或多个过程流体输送到处理室中; 耦合到所述多个入口的多个调节阀，其中所述多个入口中的每个入口联接到至少一个调节阀; 以及耦合到所述多个调节阀的控制器，所述控制器被配置为控制所述多个调节阀的操作以按预定流量比划分一个或多个过程流体的流动。

    Method and apparatus for controlling gas flow to a processing chamber
    3.
    发明授权
    Method and apparatus for controlling gas flow to a processing chamber 有权
    用于控制到处理室的气流的方法和装置

    公开(公告)号：US07775236B2

    公开(公告)日：2010-08-17

    申请号：US11678622

    申请日：2007-02-26

    申请人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    发明人： Ezra Robert Gold ,  Richard Charles Fovell ,  James Patrick Cruse ,  Jared Ahmad Lee ,  Bruno Geoffrion ,  Douglas Arthur Buchberger ,  Martin J. Salinas

    IPC分类号： F16K11/24

    CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01L21/67098 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67115 ,  Y10T137/7761 ,  Y10T137/87249

    摘要： A method and apparatus for delivering gases to a semiconductor processing system are provided. In one embodiment, an apparatus for delivering gases to a semiconductor processing system includes a plurality of gas input and output lines having inlet and outlet ports. Connecting lines couple respective pairs of the gas input and gas output lines. Connecting valves are arranged to control flow through the respective connecting lines. Mass gas flow controllers are arranged to control flow into respective inlet ports. In another embodiment, a method includes providing a manifold having at least a plurality of inlet that may be selectively coupled to at least one of a plurality of outlets, flowing one or more gases through the manifold to a vacuum environment by-passing the processing chamber prior to processing or to a calibration circuit, and flowing the one or more gases into the processing chamber during substrate processing.

    摘要翻译： 提供了一种用于将气体输送到半导体处理系统的方法和装置。 在一个实施例中，用于将气体输送到半导体处理系统的装置包括具有入口和出口的多个气体输入和输出线。 连接线耦合各对气体输入和气体输出线。 连接阀布置成控制通过相应连接线的流动。 质量气体流量控制器布置成控制流入相应入口的流量。 在另一个实施例中，一种方法包括提供具有至少多个入口的歧管，歧管可以选择性地联接到多个出口中的至少一个，将一个或多个气体通过歧管流动到真空环境，旁路处理室 在处理之前或校准电路，并且在衬底处理期间使一种或多种气体流入处理室。

    Gas distribution system for improved transient phase deposition
    5.
    发明授权
    Gas distribution system for improved transient phase deposition 有权
    用于改善瞬态相沉积的气体分配系统

    公开(公告)号：US07722737B2

    公开(公告)日：2010-05-25

    申请号：US11123453

    申请日：2005-05-04

    申请人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana E. Gujer, legal representative

    发明人： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

    IPC分类号： H01L21/326 ,  C23C16/505

    CPC分类号： C23C16/4558

    摘要： Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

    摘要翻译： 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

    Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones
    6.
    发明授权
    Plasma etch process with separately fed carbon-lean and carbon-rich polymerizing etch gases in independent inner and outer gas injection zones 有权
    在独立的内部和外部气体注入区域中分别进料碳贫和富碳聚合蚀刻气体的等离子体蚀刻工艺

    公开(公告)号：US07541292B2

    公开(公告)日：2009-06-02

    申请号：US11414027

    申请日：2006-04-28

    申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    IPC分类号： H01L21/461

    CPC分类号： H01L21/76802 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/3266 ,  H01J37/32706 ,  H01J2237/3347 ,  H01L21/31116

    摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a first polymerizing etch process gas through a radially inward one of plural concentric gas injection zones in the ceiling electrode and injecting a second polymerizing etch process gas through a radially outward one of the plural concentric gas injection zones in the ceiling electrode, the compositions of the first and second process gases having first and second carbon-to-fluorine ratios that differ from one another. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.

    摘要翻译： 用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。 该方法包括将第一聚合蚀刻工艺气体通过天花板电极中的多个同心气体注入区的径向向内的一个注入，并且通过天花板电极中的多个同心气体注入区中的径向向外的一个喷射第二聚合蚀刻工艺气体， 第一和第二工艺气体的组成具有彼此不同的第一和第二碳 - 氟比率。 该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物 通过在反应器中产生等离子体而在工件上。

    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications
    8.
    发明申请
    Use of germanium dioxide and/or alloys of GeO2 with silicon dioxide for semiconductor dielectric applications 失效
    将二氧化锗和/或GeO2与二氧化硅的合金用于半导体电介质应用

    公开(公告)号：US20060178003A1

    公开(公告)日：2006-08-10

    申请号：US11055141

    申请日：2005-02-10

    申请人： Padmanabhan Krishnaraj ,  Michael Cox ,  Bruno Geoffrion ,  Srinivas Nemani

    发明人： Padmanabhan Krishnaraj ,  Michael Cox ,  Bruno Geoffrion ,  Srinivas Nemani

    IPC分类号： H01L21/4763 ,  H01L21/31

    CPC分类号： H01L21/76837 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/76224

    摘要： A method is disclosed for depositing a dielectric film on a substrate having a plurality of gaps formed between adjacent raised surfaces disposed in a high density plasma substrate processing chamber substrate. In one embodiment the method comprises flowing a process gas comprising a germanium source, a silicon source and an oxidizing agent into the substrate processing chamber; forming a high density plasma that has simultaneous deposition and sputtering components from the process gas to deposit a dielectric film comprising silicon, germanium and oxygen; and during the step of forming a high density plasma, maintaining a pressure within the substrate processing chamber of less than 100 mTorr while allowing the dielectric film to be heated above its glass transition temperature.

    摘要翻译： 公开了一种用于在具有多个间隙的衬底上沉积电介质膜的方法，所述间隙形成在设置在高密度等离子体衬底处理室衬底中的相邻凸起表面之间。 在一个实施方案中，该方法包括将包含锗源，硅源和氧化剂的工艺气体流入衬底处理室; 形成具有来自工艺气体的同时沉积和溅射组分的高密度等离子体，以沉积包含硅，锗和氧的电介质膜; 并且在形成高密度等离子体的步骤期间，将基板处理室内的压力保持在小于100mTorr，同时允许电介质膜被加热到其玻璃化转变温度以上。

    Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
    9.
    发明授权
    Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone 有权
    具有多个气体注入区域的等离子体反应器装置，其具有用于每个区域的时变单独的可配置气体组成

    公开(公告)号：US08231799B2

    公开(公告)日：2012-07-31

    申请号：US11414026

    申请日：2006-04-28

    申请人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    发明人： Kallol Bera ,  Xiaoye Zhao ,  Kenny L. Doan ,  Ezra Robert Gold ,  Paul Lukas Brillhart ,  Bruno Geoffrion ,  Bryan Pu ,  Daniel J. Hoffman

    IPC分类号： H01L21/00 ,  C23C16/00

    CPC分类号： H01L21/3065 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/31116

    摘要： A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.

    摘要翻译： 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体，被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源，多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器，并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中，多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。