摘要:
An embodiment of the present application discloses a light-emitting structure, comprising a substrate, a first unit and a second unit separately form on the substrate; a trench formed between the first unit and the second unit, and having a bottom portion exposing the substrate, a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection connecting the first unit and the second unit and covering the first unit, the second unit and the less steep sidewall; wherein the sidewalls directly connect to the bottom portion, and the steeper sidewall is devoid of the electrical connection covering.
摘要:
A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.
摘要:
An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.
摘要:
A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.
摘要:
The present invention discloses an elasticity adjustment structure of physical training device which comprise one elastomer adjustment set; said elastomer adjustment set further comprises one first elastomer and one second elastomer. Overlapping the said second elastomer and said first elastomer with different rigidities at different depth positions to create a smooth elastic curve of said elastomer adjustment set; as a result the elasticity of said elasticity adjustment structure may be adjusted in accordance with different needs.
摘要:
A flyback power converter includes a transformer which has a primary winding, a secondary winding, and an auxiliary winding; a power switch controlling the conduction of the primary winding; and a control circuit generating a control signal to control the power switch, wherein the control circuit is an integrated circuit having a current sensing pin for obtaining a current sensing signal of a current through the power switch. The flyback power converter further includes a temperature-sensitive resistor or a mode detection resistor coupled between the auxiliary winding and the current sensing pin. The temperature-sensitive resistor provides a temperature-related signal for the control circuit to perform an over-temperature protection, or the temperature-sensitive resistor provides a mode detection signal for the control circuit to determine an operation mode of the flyback power converter.
摘要:
An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units.
摘要:
The present disclosure provides a light emitting device, including a serially- connected LED array including a plurality of LED cells on a substrate, including a first LED cell, a second LED cell, and a serially-connected LED sub-array intervening the first and second LED cell; a trench between two neighboring sides of the first and the second LED cells; and a protecting structure formed near the trench to prevent the light-emitting device from being damaged by a surge voltage higher than a normal operating voltage. The protecting structure includes a first insulating layer and a second insulating layer formed over the first insulating layer and partially filling in the trench, wherein two ends of the first insulating layer extending outward from the second insulating layer partially covers the top surfaces of the first and the second LED cells.
摘要:
Methods for treating or preventing hyperproliferating diseases, e.g., cancer, are described. A method may comprise administering to a subject in need thereof a therapeutically effective amount of a nucleic acid encoding an MHC class I and/or II activator and optionally a nucleic acid encoding an antigen.
摘要:
An immunotherapeutic strategy is disclosed that combines antigen-encoding DNA vaccine compositions combined with siRNA directed to pro-apoptotic genes, primarily Bak and Bax, the products of which are known to lead to apoptotic death. Gene gun delivery (particle bombardment) of siRNA specific for Bak and/or Bax to antigen-expressing DCs prolongs the lives of such DCs and lead to enhanced generation of antigen-specific CD8+ T cell-mediated immune responses in vivo. Similarly, antigen-loaded DC's transfected with siRNA targeting Bak and/or Bax serve as improved immunogens and tumor immunotherapeutic agents.