公开(公告)号：US5539762A

公开(公告)日：1996-07-23

申请号：US440150

申请日：1995-05-12

申请人： Gregory Belenky ,  Rudolf F. Kzarinov ,  Keisuke Kojima ,  Claude L. Reynolds, Jr.

发明人： Gregory Belenky ,  Rudolf F. Kzarinov ,  Keisuke Kojima ,  Claude L. Reynolds, Jr.

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2009 ,  H01S5/2231 ,  H01S5/3211

摘要： A novel InP-based semiconductor laser comprises an unpatterned active region that is essentially co-extensive with the substrate of the laser, an electron stopper layer, and a separate confinement heterostructure (SCH) layer that has a portion of thickness greater than the thickness of the remainder of the SCH layer. The difference in thickness serves to provide lateral guiding of the laser mode. A patterned current blocking layer is disposed on the SCH layer, with a window in the blocking layer defining the region of increased thickness of the SCH layer. The inventive laser is readily manufacturable and can have improved properties.

摘要翻译： 一种新颖的基于InP的半导体激光器包括与激光器的基板，电子阻挡层和单独的约束异质结构（SCH）层基本上共同扩展的未图案化的有源区，其具有大于 SCH层的剩余部分。 厚度差用于提供激光模式的横向引导。 图案化电流阻挡层设置在SCH层上，阻挡层中的窗口限定了SCH层厚度增加的区域。 本发明的激光器易于制造并且可以具有改进的性能。

公开(公告)号：US5041393A

公开(公告)日：1991-08-20

申请号：US290932

申请日：1988-12-28

申请人： Richard E. Ahrens ,  Albert G. Baca ,  Randolph H. Burton ,  Michael P. Iannuzzi ,  Alex Lahav ,  Shin-Shem Pei ,  Claude L. Reynolds, Jr. ,  Thi-Hong-Ha Vuong

发明人： Richard E. Ahrens ,  Albert G. Baca ,  Randolph H. Burton ,  Michael P. Iannuzzi ,  Alex Lahav ,  Shin-Shem Pei ,  Claude L. Reynolds, Jr. ,  Thi-Hong-Ha Vuong

IPC分类号： H01L29/80 ,  H01L21/20 ,  H01L21/338 ,  H01L21/76 ,  H01L21/8252 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01L21/7605 ,  H01L21/8252 ,  Y10S148/072

摘要： A process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs), a desired wafer structure for SDHT fabrication and a method for isolating SDHTs on the wafer are disclosed herein. The wafer has epitaxial layers grown on a substrate. The layers are: a buffer layer of GaAs, a first spacer layer of AlGaAs, a donor layer of AlGaAs, a second spacer layer of AlGaAs, a first cap layer of GaAs, an etch-stop layer of AlGaAs and a second cap layer of GaAs. A protective layer of AlGaAs may then be grown on the second cap layer to protect the second cap layer from contamination or damage. Also a superlattice may first be grown on the substrate.This invention was made with Government support under contract No. F29601-87-R-0202 awarded by the Defense Advanced Research Projects Agency, and under contract No. F33615-84-C-1570 awarded by the Air Force Wright Aeronautical Laboratories. The Government has certain rights in this invention.

公开(公告)号：US4615032A

公开(公告)日：1986-09-30

申请号：US630691

申请日：1984-07-13

申请人： Walter R. Holbrook ,  Claude L. Reynolds, Jr. ,  Julie A. Shimer ,  Henryk Temkin

发明人： Walter R. Holbrook ,  Claude L. Reynolds, Jr. ,  Julie A. Shimer ,  Henryk Temkin

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S3/18

CPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/2004

摘要： The specification describes an improved form of heterostructure laser, termed a "Rib-Loc" laser. It is an easily fabricated device with desirable electrical and optical properties. The Rib-Loc is simple to fabricate because a single, self-aligned rib provides ohmic contact, current confinement and lateral waveguiding. A deeply etched P-cladding layer outside the rib provides the positive index change needed for an index-guided laser. The large optical cavity increases the maximum power output and reduces the aspect ratio of the beam.

摘要翻译： 该规范描述了异质结构激光器的改进形式，称为“Rib-Loc”激光器。 它是一种易于制造的具有所需电学和光学特性的器件。 Rib-Loc制造简单，因为单个自对准肋提供欧姆接触，电流限制和横向波导。 肋之外的深蚀刻的P包层提供了索引引导激光器所需的正指数变化。 大型光学腔增加了最大功率输出并降低了光束的纵横比。

公开(公告)号：US4470368A

公开(公告)日：1984-09-11

申请号：US356931

申请日：1982-03-10

申请人： Claude L. Reynolds, Jr. ,  Maria C. Tamargo

发明人： Claude L. Reynolds, Jr. ,  Maria C. Tamargo

IPC分类号： C30B19/06 ,  H01L21/208

CPC分类号： C30B19/063 ,  Y10S117/90

摘要： In LPE boat-slider apparatus the boat, which carries the melts, is made of lower thermal conductivity material than the slider, which carries the substrate. Illustratively, the boat comprises sapphire and the slider comprises graphite. A confined-melt geometry is also described in which another slider, used to skim off thin portions of the melt, is also made of the lower thermal conductivity material.

摘要翻译： 在LPE船滑块装置中，承载熔体的船由比传送基板的滑块低的导热材料制成。 说明性地，船包括蓝宝石，滑块包括石墨。 还描述了限制熔融几何形状，其中用于撇去熔体的薄部分的另一个滑块也由较低的热导率材料制成。

公开(公告)号：US06503768B2

公开(公告)日：2003-01-07

申请号：US09821212

申请日：2001-03-29

申请人： Si Hyung Cho ,  Ronald E. Leibenguth ,  Abdallah Ougazzaden ,  Claude L. Reynolds

发明人： Si Hyung Cho ,  Ronald E. Leibenguth ,  Abdallah Ougazzaden ,  Claude L. Reynolds

IPC分类号： H01L2100

CPC分类号： H01S5/026 ,  H01S5/0265 ,  H01S5/4031 ,  H01S5/50

摘要： The present invention provides a method for monolithic integration of multiple devices on an optoelectronic substrate. The method, in a preferred embodiment, includes forming an active layer having a given wavelength over a substrate. The method further includes forming an N-type doped layer over a portion of the active layer to form first and second active regions within the active layer, the first active region having the given wavelength and the second active region having an altered wavelength different from the given wavelength. In one exemplary embodiment, the conditions used to form the N-type doped layer, for example, dopant concentration, growth rate and temperature, cause the difference in wavelength between the given wavelength and the altered wavelength.

摘要翻译： 本发明提供了一种用于在光电子衬底上单个集成多个器件的方法。 在优选实施例中，该方法包括在衬底上形成具有给定波长的有源层。 该方法还包括在有源层的一部分上形成N型掺杂层，以在有源层内形成第一和第二有源区，第一有源区具有给定的波长，而第二有源区具有不同于 给定波长。 在一个示例性实施例中，用于形成N型掺杂层的条件，例如掺杂剂浓度，生长速率和温度，引起给定波长和改变波长之间的波长差异。