Method for monolithic integration of multiple devices on an optoelectronic substrate
    1.
    发明授权
    Method for monolithic integration of multiple devices on an optoelectronic substrate 有权
    用于在光电子衬底上单个集成多个器件的方法

    公开(公告)号:US06503768B2

    公开(公告)日:2003-01-07

    申请号:US09821212

    申请日:2001-03-29

    IPC分类号: H01L2100

    摘要: The present invention provides a method for monolithic integration of multiple devices on an optoelectronic substrate. The method, in a preferred embodiment, includes forming an active layer having a given wavelength over a substrate. The method further includes forming an N-type doped layer over a portion of the active layer to form first and second active regions within the active layer, the first active region having the given wavelength and the second active region having an altered wavelength different from the given wavelength. In one exemplary embodiment, the conditions used to form the N-type doped layer, for example, dopant concentration, growth rate and temperature, cause the difference in wavelength between the given wavelength and the altered wavelength.

    摘要翻译: 本发明提供了一种用于在光电子衬底上单个集成多个器件的方法。 在优选实施例中,该方法包括在衬底上形成具有给定波长的有源层。 该方法还包括在有源层的一部分上形成N型掺杂层,以在有源层内形成第一和第二有源区,第一有源区具有给定的波长,而第二有源区具有不同于 给定波长。 在一个示例性实施例中,用于形成N型掺杂层的条件,例如掺杂剂浓度,生长速率和温度,引起给定波长和改变波长之间的波长差异。

    Optical device and method of manufacture thereof
    5.
    发明授权
    Optical device and method of manufacture thereof 有权
    光学装置及其制造方法

    公开(公告)号:US07008805B2

    公开(公告)日:2006-03-07

    申请号:US10729090

    申请日:2003-12-05

    IPC分类号: H01L21/00

    摘要: The present invention provides an optical device and a method of manufacture thereof. In one embodiment, the method of manufacturing the optical device may include isolating an end of a first layer from a cladding layer located over a mesa structure that has been formed from a substrate. The end of the first layer may be isolated from the cladding layer by encapsulating the end between second and third layers located adjacent the mesa structure.

    摘要翻译: 本发明提供一种光学装置及其制造方法。 在一个实施例中,制造光学器件的方法可以包括将第一层的端部与位于由衬底形成的台面结构之上的覆层进行隔离。 第一层的端部可以通过将端部封装在位于台面结构附近的第二层和第三层之间而与包层隔离。

    InA1As etch stop layer for precise semiconductor waveguide fabrication
    8.
    发明授权
    InA1As etch stop layer for precise semiconductor waveguide fabrication 有权
    InA1As蚀刻停止层,用于精确的半导体波导制造

    公开(公告)号:US06376272B1

    公开(公告)日:2002-04-23

    申请号:US09588427

    申请日:2000-06-06

    IPC分类号: H01L2100

    摘要: A semiconductor waveguide device and method for forming the same provide an InAlAs film as an etch stop layer. The InAlAs film does not etch in the CH4/H2 etch chemistry used to produce the device using reactive ion etching techniques. The etching process etches the waveguide layer and cladding layer or layers formed above the InAlAs layer, and exposes the InAlAs etch stop film to produce a waveguide device having desired physical characteristics.

    摘要翻译: 半导体波导器件及其形成方法提供作为蚀刻停止层的InAlAs膜。 InAlAs膜不会在用于使用反应离子蚀刻技术制造器件的CH4 / H2蚀刻化学中蚀刻。 蚀刻工艺蚀刻在InAlAs层上形成的波导层和包覆层,并暴露InAlAs蚀刻停止膜以产生具有期望物理特性的波导器件。