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公开(公告)号：US4615032A
公开(公告)日：1986-09-30
申请号：US630691
申请日：1984-07-13
CPC分类号： H01S5/20 , H01S5/22 , H01S5/2004
摘要： The specification describes an improved form of heterostructure laser, termed a "Rib-Loc" laser. It is an easily fabricated device with desirable electrical and optical properties. The Rib-Loc is simple to fabricate because a single, self-aligned rib provides ohmic contact, current confinement and lateral waveguiding. A deeply etched P-cladding layer outside the rib provides the positive index change needed for an index-guided laser. The large optical cavity increases the maximum power output and reduces the aspect ratio of the beam.
摘要翻译： 该规范描述了异质结构激光器的改进形式，称为“Rib-Loc”激光器。 它是一种易于制造的具有所需电学和光学特性的器件。 Rib-Loc制造简单，因为单个自对准肋提供欧姆接触，电流限制和横向波导。 肋之外的深蚀刻的P包层提供了索引引导激光器所需的正指数变化。 大型光学腔增加了最大功率输出并降低了光束的纵横比。
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2.发明授权
公开(公告)号：US5960018A
公开(公告)日：1999-09-28
申请号：US115689
申请日：1998-07-15
申请人： Jack L. Jewell , Henryk Temkin
发明人： Jack L. Jewell , Henryk Temkin
IPC分类号： H01L33/06 , H01L33/10 , H01L33/30 , H01L33/32 , H01S5/00 , H01S5/02 , H01S5/183 , H01S5/22 , H01S5/223 , H01S5/32 , H01S5/323 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/06 , H01S3/08
CPC分类号： H01S5/34313 , B82Y20/00 , H01L33/06 , H01L33/30 , H01L33/32 , H01S5/18311 , H01S5/2231 , H01S5/3235 , H01S5/34 , H01S5/343 , H01L33/105 , H01S2302/00 , H01S5/0211 , H01S5/1221 , H01S5/18358 , H01S5/2215 , H01S5/3201 , H01S5/3202 , H01S5/3206 , H01S5/32366 , H01S5/32383 , H01S5/3403 , H01S5/3406 , H01S5/342 , H01S5/34306
摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.
摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），（4）采用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。
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公开(公告)号：US4238686A
公开(公告)日：1980-12-09
申请号：US72366
申请日：1979-09-05
申请人： Aland K. Chin , Gilbert Y. Chin , Henryk Temkin
发明人： Aland K. Chin , Gilbert Y. Chin , Henryk Temkin
IPC分类号： G01N27/00 , G01Q30/02 , G01Q30/04 , G01R31/265 , A61K27/02
CPC分类号： G01R31/2653
摘要： Localized nonuniformities in semiconductor crystals are analyzed by scanning the semiconductor surface with an electron beam and detecting and analyzing the radiation that is generated at the semiconductor surface by the electron beam and which passes through the semiconductor crystal.
摘要翻译： 通过用电子束扫描半导体表面来分析半导体晶体中的局部不均匀性，并通过电子束检测和分析在半导体表面处产生并穿过半导体晶体的辐射。
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公开(公告)号：US20050169579A1
公开(公告)日：2005-08-04
申请号：US11042612
申请日：2005-01-25
IPC分类号： G02B6/34
CPC分类号： G02B6/12011 , G02B6/1203
摘要： An optical multiplexer that adjusts the wavelength response and compensates for temperature effects by using rotatable mirror. The wavelength response of the device is adjusted by aligning the mirror at a correct angle with respect to the surface terminating the optical waveguide grating. The temperature dependence of the index of refraction of the material comprising the waveguides is compensated for by rotating a reflecting surface of the mirror, the rotation based on differential thermal expansion. Some exemplary embodiments may comprise a slab waveguide on a substrate (the slab waveguide having a first and second arcuate end surfaces) attached to a submount, a mirror assembly rigidly attached to the submount (the mirror assembly comprising a first and second materials having different coefficients of thermal expansion), and an optical waveguide grating (upon the substrate attached to the submount) optically coupled between the second arcuate surface and the mirror assembly. A portion of the mirror assembly between the reflector surface and where the mirror assembly is rigidly attached to the submount deforms as a function of temperature to change an angle between the optical waveguide grating and the reflecting surface.
摘要翻译： 一种光学多路复用器，通过使用可旋转镜来调节波长响应并补偿温度影响。 通过将反射镜相对于终止光波导光栅的表面以正确的角度对准来调节装置的波长响应。 包括波导的材料的折射率的温度依赖性通过旋转反射镜的反射表面，基于差分热膨胀的旋转来补偿。 一些示例性实施例可以包括附接到基座的基板上的平板波导（具有第一和第二弧形端面的平板波导），刚性地附接到基座的反射镜组件（反射镜组件包括具有不同系数的第一和第二材料 的热膨胀）和光学耦合在第二弧形表面和反射镜组件之间的光波导光栅（在附接到基座的基板上）。 反射镜组件在反射器表面和反射镜组件刚性地附接到基座之间的一部分作为温度的函数变形，以改变光波导光栅和反射表面之间的角度。
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公开(公告)号：US06618537B2
公开(公告)日：2003-09-09
申请号：US10047780
申请日：2002-01-14
IPC分类号： G02B610
CPC分类号： G02B6/132 , G02B6/136 , G02B2006/12169 , G02B2006/12176
摘要： Methods of fabricating solid state optical waveguide structures comprising a doped silicon dioxide core layer sandwiched between lower and upper doped silicon dioxide cladding layers on a silicon substrate. The core and upper cladding layers are deposited using a plasma enhanced CVD process. The core layer is patterned to define one or more waveguide cores. The lower cladding layer is preferably also deposited using a plasma enhanced CVD process but alternatively may be formed by thermal oxidation.
摘要翻译： 制造固态光波导结构的方法，其包括在硅衬底上夹在下掺杂和上掺杂二氧化硅覆层之间的掺杂二氧化硅芯层。 使用等离子体增强CVD工艺沉积芯层和上覆层。 将芯层图案化以限定一个或多个波导芯。 下包层优选也使用等离子体增强CVD工艺沉积，但是也可以通过热氧化形成。
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公开(公告)号：US06580864B1
公开(公告)日：2003-06-17
申请号：US10047779
申请日：2002-01-14
IPC分类号： G02B610
CPC分类号： G02B6/136 , G02B6/105 , G02B2006/12038 , G02B2006/12169
摘要： An optical waveguide structure comprising an annealed phosphorous doped silicon dioxide core surrounded by silicon dioxide cladding layers on a silicon substrate. The refractive index of the core exceeds the refractive index of the cladding to enable waveguiding of optical signals in the core. The upper cladding layer, and in one embodiment also the lower cladding, comprises high boron and phosphorous doped silicon dioxide, suitably doped with greater than about 9% of boron and with about 2.5% to 3.5% phosphorous to obtain a thermal coefficient of expansion approximating that of the silicon substrate. In an alternative embodiment, the lower cladding layer comprises thermally grown silicon dioxide, preferably including an upstanding pedestal on which the waveguide core extends. Advantageously, the cladding composition enables substantially compensation of compressive stress in the core by residual tensile strain in the cladding, thereby reducing to very low values birefringence induced optical signal shift between TE and TM modes of propagation of an optical signal.
摘要翻译： 一种光波导结构，包括由硅衬底上的二氧化硅包覆层包围的退火磷掺杂二氧化硅芯。 芯的折射率超过包层的折射率，以使得能够在芯中波导光信号。 上覆层，并且在一个实施例中也是下包层，包括高硼和磷掺杂二氧化硅，适当地掺杂有大于约9％的硼和约2.5％至3.5％的磷以获得近似的热膨胀系数 硅衬底的。 在替代实施例中，下包层包括热生长的二氧化硅，优选地包括直立的基座，波导芯延伸在其上。 有利地，包层组合物能够通过包层中的残余拉伸应变基本上补偿芯中的压缩应力，由此降低到在光信号的TE和TM传播模式之间的双折射引起的光信号偏移的非常低的值。
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公开(公告)号：US06546031B1
公开(公告)日：2003-04-08
申请号：US09602776
申请日：2000-06-23
申请人： Jack L. Jewell , Henryk Temkin
发明人： Jack L. Jewell , Henryk Temkin
IPC分类号： H01S500
CPC分类号： H01S5/34313 , B82Y20/00 , H01L33/06 , H01L33/105 , H01L33/30 , H01L33/32 , H01S5/0211 , H01S5/1221 , H01S5/18311 , H01S5/18358 , H01S5/2215 , H01S5/2231 , H01S5/3201 , H01S5/3202 , H01S5/3206 , H01S5/3235 , H01S5/32366 , H01S5/32383 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/342 , H01S5/343 , H01S5/34306 , H01S2302/00
摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.
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公开(公告)号：US4447822A
公开(公告)日：1984-05-08
申请号：US304175
申请日：1981-09-21
CPC分类号： H01L33/38 , H01L33/0025 , H01L33/02 , H01L33/14
摘要： A light emitting diode designed to emit primarily at 1.3 microns comprises a crystal having a plurality of lattice matched layers including an n-type indium phosphide front surface layer, an n-type indium phosphide buffer layer, a p-type indium gallium arsenide phosphide active layer, a p-type indium phosphide confining layer and an indium gallium arsenide back surface layer, and an annular front contact and a limited area back contact to the crystal.
摘要翻译： 设计为以1.3微米为单位发射的发光二极管包括具有多个晶格匹配层的晶体，包括n型磷化铟前表面层，n型磷化铟缓冲层，p型砷化铟镓磷化物活性物质 p型磷化铟封闭层和砷化铟镓背面层，以及环状前接触和与晶体有限区域的背接触。
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9.发明授权Method of epitaxial growth of high quality nitride layers on silicon substrates 失效在硅衬底上外延生长高质量氮化物层的方法公开(公告)号：US06391748B1
公开(公告)日：2002-05-21
申请号：US09677762
申请日：2000-10-03
申请人： Henryk Temkin , Sergey A. Nikishin
发明人： Henryk Temkin , Sergey A. Nikishin
IPC分类号： H01L2120
CPC分类号： C30B23/02 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02513 , H01L21/0254 , H01L21/02631 , H01L21/02658 , H01L33/007
摘要： Aluminum nitride, AlN, layers are grown on silicon substrates using molecular beam epitaxial (MBE) growth. The AlN layer is initially grown by subjecting the silicon substrate to background ammonia followed by repetitively alternating the flux of 1) Al without ammonia and 2) ammonia without Al. After the surface of the silicon structure is sufficiently covered with AlN, the wafer is further subjected to a flux of ammonia and aluminum applied simultaneously to continue the epitaxial growth process. The process minimizes the formation of amorphous silicon nitride, SiNx, compounds on the surface of the substrate which form due to background nitrogen levels in the molecular beam epitaxial growth apparatus. A surface free of amorphous silicon nitride is necessary for formation of high quality AlN. The AlN layer may be further used as a buffer layer for AlGaN/GaN growth. After the AlN layer is grown on the silicon structure, the silicon structure may be subjected to a flux of Ga and nitrogen to form a layer of GaN.
摘要翻译： 使用分子束外延（MBE）生长在氮化硅衬底上生长氮化铝，AlN层。 最初通过使硅衬底经历背景氨，然后重复地交替没有氨的1）Al的焊剂和2）不含Al的氨来生长AlN层。 在硅结构的表面被AlN充分覆盖之后，晶片进一步经受同时施加的氨和铝的通量，以继续外延生长过程。 该方法由于分子束外延生长装置中背景氮含量而形成的非晶氮化硅SiN x，由此形成的衬底表面上的化合物最小化。 无定形氮化硅的表面对于形成高质量的AlN是必需的。 AlN层可以进一步用作AlGaN / GaN生长的缓冲层。 在AlN层在硅结构上生长之后，硅结构可以经受Ga和氮的通量以形成GaN层。
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公开(公告)号：US5106764A
公开(公告)日：1992-04-21
申请号：US444579
申请日：1989-11-30
IPC分类号： H01L21/302 , H01L21/20 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/311
CPC分类号： H01L21/3086 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L21/02631 , H01L21/30621 , H01L21/3081 , H01L21/31116 , H01L21/31144 , Y10S148/026 , Y10S148/111
摘要： Fine featured devices are produced by a series of fabrication steps including exposing selective surface regions to irradiation, e.g. to an ion beam, generally to result in removal of masking material within irradiated regions. In most instances, subsequent etching is under conditions such that bared material is preferentially removed. Etch-removal and irradiation are such that overgrown material is of device quality at least in etched regions. The inventive process is of particular value in the fabrication of integrated circuits, e.g. circuits performing electronic and/or optical functions. The inventive process is expediently used in the fabrication of structures having minimum feature size of 1 micrometer and smaller. Patterning is dependent upon masking material of a maximum thickness of 100 .ANG..
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