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    Spontaneous copper seed deposition process for metal interconnects
    3.
    发明申请
    Spontaneous copper seed deposition process for metal interconnects 审中-公开
    金属互连的自发铜种子沉积工艺

    公开(公告)号：US20080160204A1

    公开(公告)日：2008-07-03

    申请号：US11648006

    申请日：2006-12-28

    申请人： Adrien R. Lavoie ,  James M. Blackwell ,  Darryl J. Morrison ,  Manish Sharma

    发明人： Adrien R. Lavoie ,  James M. Blackwell ,  Darryl J. Morrison ,  Manish Sharma

    IPC分类号： B05D1/18 ,  B05C3/00

    CPC分类号： H01L21/288 ,  C23C18/38 ,  C23C18/40 ,  C25D3/38 ,  H01L21/76873 ,  H01L21/76874

    摘要： A method for depositing a copper seed layer onto a semiconductor substrate comprises applying a SCuD plating bath onto a surface of a substrate, rinsing the surface with an organic solvent, applying a co-reactant bath to the surface, and again rinsing the surface with an organic solvent. The SCuD plating bath is non-aqueous and comprises a copper precursor that is dissolved into an organic solvent. The co-reactant bath is also non-aqueous and comprises a co-reactant dissolved into an organic solvent. The SCuD plating bath may be heated before being applied to the substrate surface.

    摘要翻译： 一种将铜籽晶层沉积在半导体衬底上的方法包括将SCuD电镀浴施加到衬底的表面上，用有机溶剂冲洗表面，向表面施加共反应物浴，再次用 有机溶剂。 SCUD电镀浴是非水性的并且包含溶解在有机溶剂中的铜前体。 共反应物浴也是非水的并且包含溶解在有机溶剂中的共反应物。 可以在施加到基板表面之前加热SCUD电镀浴。

    High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces
    4.
    发明授权
    High K dielectric growth on metal triflate or trifluoroacetate terminated III-V semiconductor surfaces 失效
    金属三氟甲磺酸盐或三氟乙酸封端III-V半导体表面上的高K电介质生长

    公开(公告)号：US07763317B2

    公开(公告)日：2010-07-27

    申请号：US11694781

    申请日：2007-03-30

    申请人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    发明人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    IPC分类号： C23C16/00

    CPC分类号： H01L21/0228 ,  H01L21/02178 ,  H01L21/306 ,  H01L21/3141

    摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

    摘要翻译： 描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。 在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。 在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。 在另一个实施方案中，通过使三氟甲磺酸酯或三氟乙酸酯保护基团与质子源如水（H 2 O）反应，钝化的化合物半导体表面在ALD室中活化。 然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3）。

    HIGH K DIELECTRIC GROWTH ON METAL TRIFLATE OR TRIFLUOROACETATE TERMINATED III-V SEMICONDUCTOR SURFACES
    5.
    发明申请
    HIGH K DIELECTRIC GROWTH ON METAL TRIFLATE OR TRIFLUOROACETATE TERMINATED III-V SEMICONDUCTOR SURFACES 失效
    金属三聚物或三氟化铵终止的III-V半导体表面的高K电介质生长

    公开(公告)号：US20080241423A1

    公开(公告)日：2008-10-02

    申请号：US11694781

    申请日：2007-03-30

    申请人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    发明人： James M. Blackwell ,  Willy Rachmady ,  Gregory J. Kearns ,  Darryl J. Morrison

    IPC分类号： C23C22/00

    CPC分类号： H01L21/0228 ,  H01L21/02178 ,  H01L21/306 ,  H01L21/3141

    摘要： Surface preparation of a compound semiconductor surface, such as indium antimonide (InSb), with a triflating agent, such as triflic anhydride or a trifluoroacetylating agent, such as trifluoroacetic anhydride is described. In one embodiment, the triflating or trifluoroacetylating passivates the compound semiconductor surface by terminating the surface with triflate trifluoroacetate groups. In a further embodiment, a triflating agent or trifluoroacetylating agent is employed to first convert a thin native oxide present on a compound semiconductor surface to a soluble species. In another embodiment, the passivated compound semiconductor surface is activated in an ALD chamber by reacting the triflate or trifluoroacetate protecting groups with a protic source, such as water (H2O). Metalorganic precursors are then introduced in the ALD chamber to form a good quality interfacial layer, such as aluminum oxide (Al2O3), on the compound semiconductor surface.

    摘要翻译： 描述了化合物半导体表面如铟锑酸盐（InSb）与三氟甲磺酸酐或三氟乙酰化剂如三氟乙酸酐之类的三氟甲磺酸酯的表面处理。 在一个实施方案中，三氟甲磺酸酯或三氟乙酰化剂通过用三氟甲磺酸酯三氟乙酸酯基团终止表面而钝化化合物半导体表面。 在另一个实施方案中，使用三氟甲磺酸酯或三氟乙酰化剂来将存在于化合物半导体表面上的薄的天然氧化物转化为可溶物质。 在另一个实施方案中，钝化的化合物半导体表面通过使三氟甲磺酸酯或三氟乙酸酯保护基与质子源（例如水（H 2 O 2））反应而在ALD室中活化。 然后将金属有机前体引入ALD室中以在化合物半导体表面上形成良好质量的界面层，例如氧化铝（Al 2 O 3 O 3）。

    SELF-ALIGNED VIA PATTERNING WITH MULTI-COLORED PHOTOBUCKETS FOR BACK END OF LINE (BEOL) INTERCONNECTS
    7.
    发明申请
    SELF-ALIGNED VIA PATTERNING WITH MULTI-COLORED PHOTOBUCKETS FOR BACK END OF LINE (BEOL) INTERCONNECTS 审中-公开
    自动对准通过多行彩色胶片的背面（BEOL）互连

    公开(公告)号：US20150255284A1

    公开(公告)日：2015-09-10

    申请号：US14720821

    申请日：2015-05-24

    申请人： Robert L. Bristol ,  James M. Blackwell ,  Alan M. Myers ,  Kanwal Jit Singh

    发明人： Robert L. Bristol ,  James M. Blackwell ,  Alan M. Myers ,  Kanwal Jit Singh

    IPC分类号： H01L21/033 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L23/528

    CPC分类号： H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76801 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76897 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Self-aligned via patterning with multi-colored photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer including a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. A second layer of the interconnect structure is disposed above the first layer of the interconnect structure, the second layer including a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. First and second dielectric regions are disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The first dielectric region is composed of a first cross-linked photolyzable material, and the second dielectric region is composed of a second, different, cross-linked photolyzable material.

    摘要翻译： 描述了通过用于后端（BEOL）互连的多色photobuckets图案化的自对准。 在一个示例中，用于集成电路的互连结构包括布置在衬底上方的互连结构的第一层，第一层包括在第一方向上交替的金属线和介质线的第一光栅。 介质线具有高于金属线的最上表面的最上表面。 所述互连结构的第二层设置在所述互连结构的所述第一层上方，所述第二层包括垂直于所述第一方向的第二方向的交替金属线和介质线的第二光栅。 介质线具有比第二光栅的金属线的最下表面低的最低表面。 第二光栅的介质线与第一光栅的介质线重叠并接触，但不同。 第一和第二电介质区域设置在第一光栅的金属线和第二光栅的金属线之间，并且在与第一光栅的介电线的上部和第二栅的介电线的下部相同的平面中 光栅。 第一电介质区域由第一交联光可光化材料组成，第二电介质区域由第二不同的交联光可光化材料组成。