公开(公告)号：US20100029580A1

公开(公告)日：2010-02-04

申请号：US12063781

申请日：2006-04-12

Applicant: David J. Robbins ,  Ziqiang Yuan ,  John A. Goetz

Inventor： David J. Robbins ,  Ziqiang Yuan ,  John A. Goetz

IPC: A61K31/7072 ,  C12Q1/02 ,  A61K31/352 ,  A61K31/655 ,  A61K31/473 ,  A61K31/403 ,  A61K31/4402 ,  A61K31/55 ,  A61P35/00

CPC classification number: G01N33/57423 ,  G06F16/28 ,  G06F16/33 ,  G06F16/93 ,  G06F2216/11

Abstract: The present invention relates to the constitutive activity of the Hedgehog pathway in non-small cell lung carcinoma (NSCLC). A method for diagnosing NSCLC by detecting the level of a component of the Hedgehog pathway is provided, as is a method for identifying subjects that will respond positively to treatment with a Hedgehog pathway antagonist. Methods for treating subjects with cancer or cancers resistant to Hedgehog pathway antagonists are also provided.

Abstract translation: 本发明涉及非小细胞肺癌（NSCLC）中Hedgehog途径的组成型活性。 提供了通过检测Hedgehog途径的成分的水平来诊断NSCLC的方法，以及用于鉴定将对Hedgehog途径拮抗剂治疗作出积极响应的受试者的方法。 还提供了治疗具有抗Hedgehog途径拮抗剂的癌症或癌症受试者的方法。

公开(公告)号：US06726767B1

公开(公告)日：2004-04-27

申请号：US09763414

申请日：2001-02-22

Applicant: Alan D Marrs ,  Allister W. E. Dann ,  John L Glasper ,  Christopher Pickering ,  David J Robbins ,  John Russell

Inventor： Alan D Marrs ,  Allister W. E. Dann ,  John L Glasper ,  Christopher Pickering ,  David J Robbins ,  John Russell

IPC: C30B2516

CPC classification number: C30B25/16 ,  C23C16/52 ,  C30B25/186

Abstract: Layer processing to grow a layer structure upon a substrate surface comprises supplying a vapor mixture stream to the substrate (28) to deposit constituents, monitoring growth with an ellipsometer (12) and using its output in real-time growth control of successive pseudo-layers. A Bayesian algorithm is used to predict a probability density function for pseudo-layer growth parameters from initial surface composition, growth conditions and associated growth probabilities therewith, the function comprising discrete samples. Weights are assigned to the samples representing occurrence likelihoods based on most recent sensor output. A subset of the samples is chosen with selection likelihood weighted in favor of samples with greater weights. The subset provides a subsequent predicted probability density function and associated pseudo-layer growth parameters for growth control, and becomes a predicted probability density function for a further iteration of pseudo-layer growth.

Abstract translation: 在衬底表面上生长层结构的层处理包括将蒸汽混合物流供应到衬底（28）以沉积成分，利用椭偏仪监测生长（12），并使用其输出实现连续伪层的实时生长控制 。 贝叶斯算法用于预测来自初始表面组成，生长条件及其相关生长概率的伪层生长参数的概率密度函数，该函数包括离散样本。 根据最近的传感器输出，将重量分配给表示出现可能性的样本。 选择样本的子集，其中选择可能性加权，有利于具有更大权重的样本。 该子集提供用于生长控制的随后的预测概率密度函数和相关联的伪层生长参数，并且成为进一步迭代伪层生长的预测概率密度函数。

公开(公告)号：US07271376B2

公开(公告)日：2007-09-18

申请号：US10520850

申请日：2003-07-03

Applicant: John L Glasper ,  David J Robbins ,  Weng Y Leong

Inventor： John L Glasper ,  David J Robbins ,  Weng Y Leong

IPC: H01L31/072 ,  H01L31/107

CPC classification number: H01L27/1443 ,  H01L27/14603 ,  H01L27/14687 ,  H01L31/107

Abstract: A photodetector circuit incorporates an avalanche photodiode structure having a contact layer (14) forming an ohmic contact over an annular region (18) with the annular guard ring (8). In the fabrication process, the starting substrate can either be the handle wafer of a p− silicon-on-insulator wafer, or a p-Si substrate with an insulating SiO2 layer (4). A window (6) is produced in the insulating layer (4) by conventional photolithographic and etching. A n+ guard ring (8) is created by diffusing donor impurities into the substrate, and a thinner insulating SiO2 layer (22) is thermally grown so as to cover the exposed surface of the substrate within the window (6). P-type dopant is then implanted through the thin oxide layer to increase the doping level near the surface of the substrate. Subsequently a second window (24) is made in the insulating layer (22), and the layer (12) is then epitaxially grown selectively on the area of the substrate exposed by the window (24) in the insulating layer (22). The use of the thin oxide layer (22) reduces the area of the interface between the silicon of the layer (12) and the SiO2 of the layer (22) during the selective epitaxial deposition, thus leading to a reduction in the detrimental effect of the thermal expansion coefficient mismatch and producing less epitaxial defects at the window edge. After the epitaxial layer (12) has been grown the remaining part of the insulating layer (22) is removed by wet oxide etch which exposes an annular portion (26) of the underlying guard ring (8). Subsequently a n+ silicon epi-poly layer (14) is deposited on the surface of the device, and forms an ohmic contact with the guard ring (8), and simultaneously forms the top contact of the photodiode. Such a fabrication process does not significantly increase the fabrication complexity. Although an additional mask is required as compared with the conventional fabrication process, the fact that the layer (14) is in ohmic contact with the guard ring (8) means that it is no longer necessary to provide a separate contact to the guard ring, and as a result the overall number of masks or process steps used may be similar in both processes.

公开(公告)号：US06858912B2

公开(公告)日：2005-02-22

申请号：US09923341

申请日：2001-08-08

Applicant: Gillian F Marshall ,  David J Robbins ,  Wang Y Leong ,  Steven W Birch

Inventor： Gillian F Marshall ,  David J Robbins ,  Wang Y Leong ,  Steven W Birch

IPC: H01L27/146 ,  H01L31/028 ,  H01L31/107 ,  H01L31/072 ,  H01L27/095

CPC classification number: H04N5/3745 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/028 ,  H01L31/107

Abstract: A photodetector circuit incorporates an avalanche photodiode (APD) 300 produced by epitaxy on a CMOS substrate 302 with implanted n-well 304 and p-well 306. The n-well 304 has an implanted p+ guard ring 310 delimiting the APD 300. Within the guard ring 310 is an implanted n+ APD layer 312 upon which is deposited an epitaxial p+ APD layer 314, these layers forming the APD 300. The APD may be incorporated in an amplifier circuit 50 providing feedback to maintain constant bias voltage, and may include an SiGe absorption region to provide extended long wavelength response or lower avalanche voltage. Non-avalanche photodiodes may also be used.

Abstract translation: 光电检测器电路包括通过在具有注入的n阱304和p阱306的CMOS衬底302上进行外延生产的雪崩光电二极管（aDD）300。n阱304具有限定APD 300的植入的p +保护环310。 保护环310是植入的n + APD层312，在其上沉积外延p + APD层314，这些层形成APD 300. APD可以结合在放大器电路50中，以提供反馈以保持恒定的偏置电压，并且可以包括 SiGe吸收区域提供延长的长波长响应或较低的雪崩电压。 也可以使用非雪崩光电二极管。

公开(公告)号：US6111266A

公开(公告)日：2000-08-29

申请号：US952006

申请日：1997-11-07

Applicant: Roger T Carline ,  David J Robbins

Inventor： Roger T Carline ,  David J Robbins

IPC: H01L27/14 ,  H01L31/0232 ,  H01L31/0352 ,  H01L29/06

CPC classification number: B82Y20/00 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/035254

Abstract: A semiconductor substrate, suitable for epitaxial growth thereon, comprising a plurality of layers of material. The interfaces between layers act as reflectors of electromagnetic radiation. The reflectors may be used in, for example, resonant cavities in which may be located, for example, multi-quantum well detectors, the efficiency of said detectors being increased by virtue of the enhanced electric field associated with resonance in the cavity.

Abstract translation: PCT No.PCT / GB96 / 01324 Sec。 371日期：1997年11月7日 102（e）1997年11月7日PCT PCT 1996年6月4日PCT公布。 公开号WO96 / 39719 日期1996年12月12日一种适用于其上的外延生长的半导体衬底，包括多层材料。 层之间的界面充当电磁辐射的反射器。 反射器可以用在例如可以位于其中的谐振腔，例如多量子阱检测器，由于与空腔中的谐振相关联的增强的电场，所述检测器的效率增加。

公开(公告)号：US06512483B1

公开(公告)日：2003-01-28

申请号：US09623101

申请日：2000-11-03

Applicant: Anthony J Holden ,  Michael C Wiltshire ,  David J Robbins ,  William J Stewart ,  John B Pendry

Inventor： Anthony J Holden ,  Michael C Wiltshire ,  David J Robbins ,  William J Stewart ,  John B Pendry

IPC: H01Q126

CPC classification number: H01Q15/0013 ,  H01Q19/062

Abstract: The performance of a microwave antenna is improved by incorporating a fine wire dielectric material which has a dielectric constant ∈ of less than unity at microwave frequencies. The effect of the dielectric material is to refract microwaves so that the antenna appears to have a larger aperture than that of its physical size. Furthermore, by selecting the transmission cut off frequency of the dielectric material, two antenna elements which are intended to operate within different frequency bands can be mounted one behind the other.

Abstract translation: 微波天线的性能通过在微波频率下结合介电常数小于1的细线电介质材料得到改善。 介电材料的作用是折射微波，使得天线的孔径比其物理尺寸大。 此外，通过选择介电材料的传输截止频率，可以一个接一个地安装旨在在不同频带内操作的两个天线元件。

公开(公告)号：US5077143A

公开(公告)日：1991-12-31

申请号：US435392

申请日：1989-11-06

Applicant: Keith G. Barraclough ,  David J. Robbins ,  Leigh T. Canham

Inventor： Keith G. Barraclough ,  David J. Robbins ,  Leigh T. Canham

IPC: H01L21/322 ,  H01L27/15 ,  H01L33/00 ,  H01L33/34 ,  H01L33/64

CPC classification number: H01L33/343 ,  H01L24/49 ,  H01L33/0008 ,  H01L33/0054 ,  H01L33/34 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L33/648 ,  Y10S428/917

Abstract: An electroluminescent silicon device comprises a light emitting diode (10). The diode (10) includes a p.sup.+ semiconductor contact (42) and a n.sup.- layer (32), forming a p-n junction (43) therebetween. The n.sup.- layer (32) is carbon-doped and irradiated with an electron beam having electrons with energies of between 150 and 400 keV to form G-centres. The diode (10) is electroluminescent when forward biassed, radiative recombination occuring at the G-centres. The invention reconciles the conflicting requirements of creating luminescent defect centres by irradiation while avoiding damage to electronic properties. The device may be an integrated light emitting diode (200) incorporated in a CMOS microcircuit. Photon output from the diode (200) may be relayed to other parts of a CMOS microcircuit by an integrated waveguide (224).

Abstract translation: PCT No.PCT / GB88 / 00319 Sec。 371日期：1989年11月6日 102（e）日期1989年11月6日PCT提交1988年4月25日PCT公布。 出版物WO88 / 09060 日期：1988年11月17日。电致发光硅器件包括发光二极管（10）。 二极管（10）包括在其间形成p-n结（43）的p +半导体接触（42）和n-层（32）。 n层（32）是碳掺杂的，并且用能量在150和400keV之间的电子的电子束照射以形成G中心。 当前向偏置时，二极管（10）是电致发光，在G中心发生辐射复合。 本发明通过照射来协调产生发光缺陷中心的冲突要求，同时避免损害电子特性。 该器件可以是并入CMOS微电路中的集成发光二极管（200）。 来自二极管（200）的光子输出可以通过集成波导（224）中继到CMOS微电路的其它部分。

公开(公告)号：US08273701B2

公开(公告)日：2012-09-25

申请号：US12063781

申请日：2006-08-14

Applicant: David J. Robbins ,  Ziqiang Yuan ,  John A. Goetz

Inventor： David J. Robbins ,  Ziqiang Yuan ,  John A. Goetz

IPC: A01N61/00

CPC classification number: G01N33/57423 ,  G06F17/30011 ,  G06F17/30587 ,  G06F17/30634 ,  G06F2216/11

Abstract: The present invention relates to the constitutive activity of the Hedgehog pathway in non-small cell lung carcinoma (NSCLC). A method for diagnosing NSCLC by detecting the level of a component of the Hedgehog pathway is provided, as is a method for identifying subjects that will respond positively to treatment with a Hedgehog pathway antagonist. Methods for treating subjects with cancer or cancers resistant to Hedgehog pathway antagonists are also provided.

Abstract translation: 本发明涉及非小细胞肺癌（NSCLC）中Hedgehog途径的组成型活性。 提供了通过检测Hedgehog途径的成分的水平来诊断NSCLC的方法，以及用于鉴定将对Hedgehog途径拮抗剂治疗作出积极响应的受试者的方法。 还提供了治疗具有抗Hedgehog途径拮抗剂的癌症或癌症受试者的方法。

公开(公告)号：US06978067B2

公开(公告)日：2005-12-20

申请号：US10276993

申请日：2001-05-18

Applicant: David C W Herbert ,  Edward T R Chidley ,  Roger T Carline ,  Weng Y Leong ,  David R Wight ,  David J Robbins ,  John M Heaton

Inventor： David C W Herbert ,  Edward T R Chidley ,  Roger T Carline ,  Weng Y Leong ,  David R Wight ,  David J Robbins ,  John M Heaton

IPC: H01L31/107 ,  G02B6/42 ,  G02F1/01 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/105 ,  H01S5/10

CPC classification number: H01L31/035254 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/50

Abstract: A horizontal access semiconductor photo detector (2) comprises a horizontal light absorbing layer (8) for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion (18) and a second light confining portion (20, 21) arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.

Abstract translation: 水平存取半导体光电检测器（2）包括用于将光转换为光电流的水平光吸收层（8），该层被配置为将灯限制在耳语中的传播模式中。 检测器被配置为具有布置成使得波导部分将光耦合到检测器中并将光传输到光限制部分中的第一波导部分（18）和第二光限制部分（20,21），以激发耳语画廊模式 在光限制部分周围的传播。 光吸收层可以是光限制部分的一部分，或者光可以耦合到光限制部分中，或者可替换地，光可以通过渐逝耦合从光限制部分耦合到光吸收层中。 在光吸收层内的耳语画廊模式的激发显着增加了光吸收层的有效吸收系数。

公开(公告)号：US06608811B1

公开(公告)日：2003-08-19

申请号：US09622856

申请日：2000-11-03

Applicant: Anthony J Holden ,  Michael C Wiltshire ,  David J Robbins ,  William J Stewart ,  John B Pendry

Inventor： Anthony J Holden ,  Michael C Wiltshire ,  David J Robbins ,  William J Stewart ,  John B Pendry

IPC: H01G4005

CPC classification number: H01Q15/0086 ,  H01Q17/00 ,  Y10T428/12542 ,  Y10T428/12569 ,  Y10T428/12736

Abstract: A structure which exhibits magnetic properties when it receives electromagnetic radiation is formed from an array of capacitive elements each of which is smaller, and preferably much smaller, than the wavelength of the radiation. Each capacitive element has a low resistance conducting path associated with it and is such that a magnetic component of the received electromagnetic radiation induces an electrical current to flow around the path and through the associated element. The creation of internal magnetic fields generated by the flow of the induced electrical current gives rise to the structure's magnetic properties.

Abstract translation: 当接收电磁辐射时呈现磁性的结构由电容元件的阵列形成，每个电容元件的阵列比辐射的波长更小，优选地远小于辐射的波长。 每个电容元件具有与其相关联的低电阻传导路径，并且使得所接收的电磁辐射的磁分量引起电流流过路径并通过相关联的元件。 由感应电流的流动产生的内部磁场的产生产生了结构的磁性。