公开(公告)号：US06529646B1

公开(公告)日：2003-03-04

申请号：US09647382

申请日：2000-12-21

Applicant: David R Wight ,  Nicola Shaw ,  William J Stewart

Inventor： David R Wight ,  Nicola Shaw ,  William J Stewart

IPC: G02F101

CPC classification number: G02F1/01 ,  G02F1/0147 ,  G02F1/025 ,  G02F1/0344 ,  G02F1/0356 ,  G02F1/2255 ,  G02F1/2257 ,  G02F2001/0155

Abstract: An optical modulator includes an optical input; an optical output; at least one optical path connecting the optical input and output; and an electrode structure for selectively changing the optical characteristic of a part of the at least one optical path in response to a control signal such as to modulate light passing along the optical path. The optical path further includes a structure which slows the passage of light along the part of the optical path to enhance the modulation effect of the modulator for a given length of optical path. Preferably the structure comprises a sequence of coupled resonator structures in which each resonator structure is defined by a pair of partially reflecting planes which define an optical resonator cavity within the optical parts.

Abstract translation: 光调制器包括光输入; 光输出; 连接光输入和输出的至少一个光路; 以及电极结构，用于响应于控制信号选择性地改变所述至少一个光路的一部分的光学特性，以调制沿着光路通过的光。 光路还包括一种结构，其缓慢沿着光路部分的光的通过，以增强调制器在给定长度的光路上的调制效果。 优选地，该结构包括一系列耦合谐振器结构，其中每个谐振器结构由在光学部件内限定光学谐振腔的一对部分反射平面限定。

公开(公告)号：US5210763A

公开(公告)日：1993-05-11

申请号：US855031

申请日：1992-05-06

Applicant: Meirion F. Lewis ,  David R. Wight

Inventor： Meirion F. Lewis ,  David R. Wight

IPC: G02B6/04 ,  H03B5/00 ,  H03B17/00

CPC classification number: H03B17/00

Abstract: A single frequency oscillator (10) comprises a laser diode (12), a fibre optic bundle (22) acting as a delay line filter, a photodiode (26) and a feedback loop to the laser diode (12) containing an amplifier (28) and additional low Q filtering (29, 34). The laser diode output (18) bears a modulation signal which is filtered to a series of "resonant" or synchronous frequencies by the bundle (22), converted back to an electrical signal by the diode (26) amplified, and reduced to a single resonant frequency by the low Q filtering (29, 34). It is then applied to the laser diode (12) as positive feedback to modulate the diode output (18). The output of the oscillator (10) can be taken as a microwave signal or on an optical carrier. The invention provides an oscillator incorporating feedback on an optical carrier.

Abstract translation: PCT No.PCT / GB90 / 01539 Sec。 371日期：1992年5月6日 102（e）日期1992年5月6日PCT提交1990年10月5日PCT公布。 公开号WO91 / 05403 日期：1991年4月18日。单频振荡器（10）包括激光二极管（12），用作延迟线滤波器的光纤束（22），光电二极管（26）和到激光二极管 12）包含放大器（28）和附加的低Q滤波（29,34）。 激光二极管输出（18）承载调制信号，该调制信号被束（22）滤波成一系列“共振”或同步频率，并被放大的二极管（26）转换成电信号，并被简化为单 谐振频率由低Q滤波（29,34）。 然后将其作为正反馈施加到激光二极管（12）以调制二极管输出（18）。 振荡器（10）的输出可以作为微波信号或光载波。 本发明提供了一种在光载波上并入反馈的振荡器。

公开(公告)号：US06385353B1

公开(公告)日：2002-05-07

申请号：US09529541

申请日：2000-04-14

Applicant: Colin M Boyne ,  John M Heaton ,  David R Wight

Inventor： Colin M Boyne ,  John M Heaton ,  David R Wight

IPC: G02F1035

CPC classification number: G02F1/011 ,  G02B6/12011 ,  G02B6/12033 ,  G02B6/2861 ,  G02B6/29301

Abstract: A device for spatially separating components of frequency in a primary radiation beam comprising means for separating the primary radiation beam into a plurality of secondary radiation beams, a plurality of electrically biasable waveguides forming a waveguide array, each for transmitting a secondary radiation beam to an output, wherein each waveguide has an associated optical delay line having a corresponding optical delay time, wherein each of the optical delay times is different. The device also comprises means for applying a variable electric field across each of the waveguides such that the phase of the secondary radiation beams transmitted through each may be varied by varying the electric field. The secondary radiation beams output from each of the waveguides interfere in a propagation region with a secondary radiation beam output from at least one of the other waveguides so as to form an interference pattern comprising one or more maximum at various positions in the propagation region.

Abstract translation: 一种用于在主辐射束中空间分离频率分量的装置，包括用于将主辐射束分离成多个次辐射束的装置，形成波导阵列的多个电偏置波导，每个用于将次辐射束发射到输出 其中每个波导具有相关联的光学延迟线，其具有对应的光学延迟时间，其中每个光学延迟时间是不同的。 该装置还包括用于在每个波导上施加可变电场的装置，使得透过每个波导的二次辐射束的相位可以通过改变电场来改变。 从每个波导输出的次级辐射束在传播区域中与从其它波导中的至少一个波导输出的次级辐射束相互干扰，从而形成包括传播区域中各个位置处的一个或多个最大值的干涉图案。

公开(公告)号：US5223412A

公开(公告)日：1993-06-29

申请号：US658652

申请日：1991-02-21

Applicant: David R. Wight ,  Wayne R. Newman ,  Patrick J. Ward ,  Kristine Pochodylo

Inventor： David R. Wight ,  Wayne R. Newman ,  Patrick J. Ward ,  Kristine Pochodylo

IPC: C12P21/00 ,  C07K14/21 ,  C07K14/27 ,  C12P21/02 ,  C12R1/18 ,  C12R1/19 ,  C12R1/38

CPC classification number: C12P21/02 ,  C07K14/21 ,  C07K14/27 ,  Y10S435/847 ,  Y10S435/874 ,  Y10S530/828

Abstract: Microbially produced ice nucleator mixtures which include either cell-free ice nucleator particle mixtures and/or whole cell ice nucleator mixtures. These mixtures are produced in methods which comprises culturing a selected microorganism in a two step process at a first temperature in a first step and at a lower temperature in a second step. The mciroorganisms include Erwinia, Pseudomonas and Escherichia coil. These methods produce ice nucleator mixtures having increased concentrations of ice nucleating sites per given weight or volume of ice nucleator material.

Abstract translation: 微生物产生的冰核混合物，其包括无细胞的冰核子颗粒混合物和/或全细胞冰成核剂混合物。 这些混合物以包括在第一步骤的第一温度和第二步骤中的较低温度下以两步法培养所选择的微生物的方法生产。 矿物元素包括欧文氏菌，假单胞菌和大肠杆菌。 这些方法产生每个给定重量或体积的冰成核剂材料具有增加的冰成核位点浓度的冰成核剂混合物。

公开(公告)号：US4321613A

公开(公告)日：1982-03-23

申请号：US43977

申请日：1979-05-31

Applicant: Brian T. Hughes ,  John C. Vokes ,  David R. Wight

Inventor： Brian T. Hughes ,  John C. Vokes ,  David R. Wight

IPC: H01L29/73 ,  H01L21/306 ,  H01L21/331 ,  H01L21/338 ,  H01L21/58 ,  H01L23/482 ,  H01L29/417 ,  H01L29/423 ,  H01L29/80 ,  H01L29/812 ,  H01L21/20 ,  H01L21/302

CPC classification number: H01L24/83 ,  H01L21/30612 ,  H01L23/482 ,  H01L24/26 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/812 ,  H01L2221/68363 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01067 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/30105 ,  Y10S148/084 ,  Y10S438/928 ,  Y10S438/977

Abstract: A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g. GaAs over the surface of a first substrate of semiconductor material, e.g., also GaAs, forming source, drain and gate electrodes over the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, and removing the first substrate. To facilitate the removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant may be formed between the first substrate and active layer, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the active layer following removal of the first substrate. The technique is particularly applicable to high frequency FET devices.

Abstract translation: 一种制造场效应晶体管的方法，包括以下步骤：形成半导体材料的有源层， GaAs在半导体材料的第一衬底（例如GaAs）的表面上，在有源层的表面上形成源极，漏极和栅电极，将绝缘材料的第二衬底施加到该结构的表面，并且去除第一 基质。 为了便于通过选择性蚀刻去除GaAs第一衬底，可以在第一衬底和有源层之间形成对GaAs蚀刻剂具有耐蚀性的缓冲层，该层在移除第一衬底之后，使用选择性 GaAs活性层所抵抗的蚀刻剂。 在移除第一基板之后，可以在有源层上形成第二栅电极。 该技术特别适用于高频FET器件。

公开(公告)号：US06829278B1

公开(公告)日：2004-12-07

申请号：US09445991

申请日：1999-12-17

Applicant: Michael B Allenson ,  Stephen G Ayling ,  David R Wight

Inventor： Michael B Allenson ,  Stephen G Ayling ,  David R Wight

IPC: H01S500

CPC classification number: H01S5/4025 ,  H01S5/02276 ,  H01S5/0262 ,  H01S5/4018

Abstract: A light emitting device for generating at least one beam of output radiation from an input current of electrons comprises at least two p-n junction devices for converting the input current of electrons into photons, wherein the p-n junction devices are electrically connected in series such that the input impedance of the light emitting device is substantially equal to the sum of the individual impedance of the p-n junction devices. Hence the quantum efficiency of the light emitting device is substantially equal to the sum of the individual quantum efficiencies of the p-n junction devices. In a preferred embodiment, the light emitting device comprises a plurality of p-n junction devices connected in series such that the input impedance of the light emitting device is equal to 50 &OHgr; without the need for additional circuitry or impedance matching elements. The device may therefore have a 50 &OHgr; impedance over a broad frequency band, limited by the modulation frequency limit of the individual p-n junctions. Typically, the p-n junctions may be AlGaAs, AlGaInP, AlGaInAs or AlGaInAsp laser diode devices. The invention also relates to an optically coupled bipolar transistor device.

Abstract translation: 用于从电子的输入电流产生至少一束输出辐射的发光器件包括用于将电子的输入电流转换成光子的至少两个pn结器件，其中pn结器件串联电连接，使得输入 发光器件的阻抗基本上等于pn结器件的单独阻抗的总和。 因此，发光器件的量子效率基本上等于p-n结器件的各个量子效率之和。 在优选实施例中，发光器件包括串联连接的多个p-n结器件，使得发光器件的输入阻抗等于50Ω，而不需要额外的电路或阻抗匹配元件。 因此，器件可能在宽频带上具有50Ω的阻抗，受到各个p-n结的调制频率限制的限制。 通常，p-n结可以是AlGaAs，AlGaInP，AlGaInAs或AlGaInAsp激光二极管器件。 本发明还涉及一种光耦合双极晶体管器件。

公开(公告)号：US5082342A

公开(公告)日：1992-01-21

申请号：US488042

申请日：1990-05-22

Applicant: David R. Wight ,  John M. Heaton ,  Meirion F. Lewis ,  Christopher L. West

Inventor： David R. Wight ,  John M. Heaton ,  Meirion F. Lewis ,  Christopher L. West

IPC: G02B6/12 ,  G02F1/015 ,  G02F1/025 ,  G02F1/29 ,  G02F1/295 ,  G02F1/313 ,  H01S5/00

CPC classification number: G02F1/025 ,  G02F1/295 ,  G02F2001/0154

Abstract: An electro-optic waveguide device (10) comprises an assembly of waveguides (30) connected to a common light input region (41) and forming a common far field diffraction pattern (44). The device (10) comprises an n.sup.+ GaAs substrate (14) bearing a waveguide lower cladding layer (16) of n.sup.+ Ga.sub.0.9 Al.sub.0.1 As, which is in turn surmounted by a waveguide core layer (18) of n.sup.- GaAs. The layer (18) has grooves (20) defining the waveguides (30), each of which has a respective Schottky contact (32). Each contact (32) is biased negative with respect to the substrate (14), which reverse biases the respective Schottky diode waveguide structure. The waveguide core layer (18) has electro-optic properties, and its refractive index varies with electric field. The phase of light emerging from each waveguide is therefore independently variable by means of its applied bias voltage. The waveguides (30) are arranged to provide output confined very largely to lowest order spatial modes, so that they produce a single far field diffraction pattern (44). Varying the set of bias voltages applied to the waveguides (30) produces output phase variation which changes the position of the diffraction pattern principal maximum (46) to produce beam steering.

Abstract translation: PCT No.PCT / GB88 / 00928 Sec。 371日期1990年5月22日 102（e）日期1990年5月22日PCT提交1988年10月31日PCT公布。 出版物WO89 / 04988 日期：1989年6月1日。电光波导装置（10）包括连接到公共光输入区域（41）并形成公共远场衍射图案（44）的波导组件（30）。 器件（10）包括n + GaAs衬底（14），该衬底承载n + Ga0.9Al0.1As的波导下包层（16），其又由n-GaAs的波导芯层（18）覆盖。 层（18）具有限定波导（30）的凹槽（20），每个波导具有相应的肖特基接触（32）。 每个触点（32）相对于衬底（14）偏置为负，这反向偏置相应的肖特基二极管波导结构。 波导芯层（18）具有电光性质，其折射率随电场而变化。 因此，从每个波导出射的光的相位可以通过其施加的偏置电压独立地变化。 波导（30）被布置成提供非常大地限制在最低阶空间模式的输出，使得它们产生单个远场衍射图案（44）。 改变施加到波导（30）的偏置电压的集合产生输出相位变化，其改变衍射图案主要最大值（46）的位置以产生波束转向。

公开(公告)号：US4325073A

公开(公告)日：1982-04-13

申请号：US44274

申请日：1979-05-31

Applicant: Brian T. Hughes ,  Reuben Redstone ,  John C. Vokes ,  David R. Wight

Inventor： Brian T. Hughes ,  Reuben Redstone ,  John C. Vokes ,  David R. Wight

IPC: H01L29/73 ,  H01L21/306 ,  H01L21/331 ,  H01L21/338 ,  H01L21/58 ,  H01L23/482 ,  H01L29/417 ,  H01L29/423 ,  H01L29/80 ,  H01L29/812 ,  H01L21/208

CPC classification number: H01L24/83 ,  H01L21/30612 ,  H01L23/4825 ,  H01L24/26 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/812 ,  H01L29/8126 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01057 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/1306 ,  Y10S438/977

Abstract: A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material (GaAs) over a surface of a first substrate of semiconductor material (GaAs), applying a second substrate of insulating material, e.g. glass, over the surface of the active layer, removing the first substrate so that the active layer is now supported on the insulating second substrate, and forming source, drain and gate electrodes over the free surface of the active layer. To facilitate removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant, may be formed between the active layer and the first substrate, which buffer layer is removed, following removal of first substrate, using a selective etchant to which the GaAs active layer is resistant. The technique is particularly applicable to high frequency FETs requiring a very thin active channel region interfaced to a substrate having good insulating properties.

Abstract translation: 一种制造场效应晶体管的方法，包括以下步骤：在半导体材料（GaAs）的第一衬底的表面上形成半导体材料（GaAs）的有源层，施加绝缘材料的第二衬底，例如， 玻璃，在有源层的表面上，去除第一衬底，使得有源层现在被支撑在绝缘的第二衬底上，并且在有源层的自由表面上形成源极，漏极和栅电极。 为了便于通过选择性蚀刻去除GaAs第一衬底，可以在去除第一衬底之后，使用选择性的方法在有源层和去除了缓冲层的第一衬底之间形成耐GaAs腐蚀剂的缓冲层GaAlAs GaAs活性层所抵抗的蚀刻剂。 该技术特别适用于需要与具有良好绝缘性能的衬底相连接的非常薄的有源沟道区的高频FET。

公开(公告)号：US4317125A

公开(公告)日：1982-02-23

申请号：US43979

申请日：1979-05-31

Applicant: Brian T. Hughes ,  John C. Vokes ,  David R. Wight

Inventor： Brian T. Hughes ,  John C. Vokes ,  David R. Wight

IPC: H01L29/73 ,  H01L21/306 ,  H01L21/331 ,  H01L21/338 ,  H01L21/58 ,  H01L23/482 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L29/80 ,  H01L29/812 ,  H01L21/302

CPC classification number: H01L29/78648 ,  H01L21/30612 ,  H01L23/4825 ,  H01L24/26 ,  H01L24/83 ,  H01L29/41775 ,  H01L29/42316 ,  H01L29/812 ,  H01L29/8124 ,  H01L29/8126 ,  H01L2224/8319 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01041 ,  H01L2924/01072 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/30105

Abstract: A method of fabricating a field effect transistor comprising the steps of forming an active layer of semiconductor material, e.g., GaAs, over a surface of a first substrate of semiconductor material, e.g., also GaAs, forming a gate electrode on the surface of the active layer, applying a second substrate of insulating material to the surface of this structure, removing the first substrate, and forming source and drain electrodes on the opposite surface of the active layer to the gate electrode. To facilitate removal of the GaAs first substrate by selective etching, a buffer layer of GaAlAs resistant to the GaAs etchant, may be formed between the active layer and the first substrate, which buffer layer is removed, following removal of the first substrate, using a selective etchant to which the GaAs active layer is resistant. A second gate electrode may be formed on the opposite surface of the active layer to that on which the first gate electrode is formed. The technique is particularly applicable to high frequency FET devices.

Abstract translation: 一种制造场效应晶体管的方法，包括以下步骤：在半导体材料的第一衬底（例如GaAs）的表面上形成半导体材料（例如GaAs）的有源层，在GaAs的表面上形成栅电极 将绝缘材料的第二衬底施加到该结构的表面，去除第一衬底，以及在有源层的相对表面上形成源电极和漏电极到栅电极。 为了便于通过选择性蚀刻去除GaAs第一衬底，可以在去除第一衬底之后，在去除第一衬底之后，在有源层和去除了缓冲层的第一衬底之间形成可抗GaAs蚀刻剂的缓冲层GaAlAs，使用 GaAs活性层对其有选择性的腐蚀剂。 可以在有源层的相对表面上形成第二栅极电极，形成第一栅电极。 该技术特别适用于高频FET器件。

公开(公告)号：US06978067B2

公开(公告)日：2005-12-20

申请号：US10276993

申请日：2001-05-18

Applicant: David C W Herbert ,  Edward T R Chidley ,  Roger T Carline ,  Weng Y Leong ,  David R Wight ,  David J Robbins ,  John M Heaton

Inventor： David C W Herbert ,  Edward T R Chidley ,  Roger T Carline ,  Weng Y Leong ,  David R Wight ,  David J Robbins ,  John M Heaton

IPC: H01L31/107 ,  G02B6/42 ,  G02F1/01 ,  H01L31/0232 ,  H01L31/0352 ,  H01L31/105 ,  H01S5/10

CPC classification number: H01L31/035254 ,  B82Y20/00 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1075 ,  Y02E10/50

Abstract: A horizontal access semiconductor photo detector (2) comprises a horizontal light absorbing layer (8) for converting light into photo-current which layer is configured to confine light within it in whispering gallery modes of propagation. The detector is configured to have a first waveguide portion (18) and a second light confining portion (20, 21) arranged such that the waveguide portion couples light into the detector and transfers light into the light confining portion so as to excite whispering gallery modes of propagation around the light confining portion. The light absorbing layer may be part of the light confining portion or alternatively light can be coupled into the light confining portion or alternatively light can be coupled into the light absorbing layer from the light confining portion by evanescent coupling. The excitation of whispering gallery modes within the light absorbing layer significantly increases the effective absorption coefficient of the light absorbing layer.

Abstract translation: 水平存取半导体光电检测器（2）包括用于将光转换为光电流的水平光吸收层（8），该层被配置为将灯限制在耳语中的传播模式中。 检测器被配置为具有布置成使得波导部分将光耦合到检测器中并将光传输到光限制部分中的第一波导部分（18）和第二光限制部分（20,21），以激发耳语画廊模式 在光限制部分周围的传播。 光吸收层可以是光限制部分的一部分，或者光可以耦合到光限制部分中，或者可替换地，光可以通过渐逝耦合从光限制部分耦合到光吸收层中。 在光吸收层内的耳语画廊模式的激发显着增加了光吸收层的有效吸收系数。