公开(公告)号：US5559358A

公开(公告)日：1996-09-24

申请号：US247911

申请日：1994-05-23

申请人： David W. Burns ,  Henry Guckel ,  James D. Zook

发明人： David W. Burns ,  Henry Guckel ,  James D. Zook

IPC分类号： G01D21/00 ,  G01J1/02 ,  G01J5/44 ,  G01K7/32 ,  G01K11/26 ,  G01L9/00 ,  G01P15/093 ,  G01P15/097 ,  G01P15/10 ,  G02B26/00 ,  G02B26/08 ,  H01L31/00 ,  H01L31/10 ,  H01L29/82

CPC分类号： H01L31/00 ,  G01J5/44 ,  G01L9/002 ,  G01P15/093 ,  G01P15/097 ,  G02B26/001 ,  G02B26/0833 ,  G01P2015/0828

摘要： The present invention relates to microstructures fabricated from semiconductor material and having a flexible member which is excited into various modes of resonance and in which such resonance is read optically. By coupling the microstructure to a surface or material of interest, a drive means will excite the flexible member into a characteristic resonance which when read optically gives indication of certain physical phenomena influencing the surface or material of interest. The microstructures of the present invention may be configured to self-resonate, as a so-called active device, under certain conditions. Many different physical phenomena may be quantified using the device of the present invention.

摘要翻译： 本发明涉及由半导体材料制成的微结构，并且具有被激发成各种谐振模式并且其中这种共振被光学读出的柔性元件。 通过将微结构耦合到感兴趣的表面或材料，驱动装置将使柔性构件激发成特征共振，其在光学读出时指示影响感兴趣的表面或材料的某些物理现象。 本发明的微结构可以被配置为在某些条件下作为所谓的有源器件自谐振。 可以使用本发明的装置量化许多不同的物理现象。

公开(公告)号：US5275055A

公开(公告)日：1994-01-04

申请号：US937068

申请日：1992-08-31

申请人： James D. Zook ,  David W. Burns

发明人： James D. Zook ,  David W. Burns

IPC分类号： G01P15/10 ,  G01B7/16 ,  G01L1/18 ,  G01L9/00 ,  G01L9/08 ,  G01P15/08 ,  G01P15/097

CPC分类号： G01P15/097 ,  G01B7/16 ,  G01L1/183 ,  G01L9/0019 ,  Y10S73/01

摘要： A resonant strain gauge includes a silicon substrate, a polysilicon flexure beam attached at both ends to the substrate, and a polysilicon rigid cover cooperating with the substrate to enclose the flexure beam within a sealed vacuum chamber. An upper bias electrode is formed on the cover, and a lower bias electrode is formed on the substrate directly beneath and spaced apart from the flexure beam. A drive electrode is formed in or on the beam, centered between the upper and lower bias electrodes transversely with respect to the direction of beam elongation. The upper and lower electrodes are biased at constant voltage levels, of equal magnitude and opposite polarity. The drive electrode, ordinarily biased at ground, is selectively charged by applying an oscillating drive voltage, to cause mechanical oscillation of the beam. A piezoresistor element, formed on the beam, senses beam oscillation and provides a position indicating input to the oscillator circuit that drives the beam. The beam tends to oscillate at its natural resonant frequency. The piezoresistor thus provides the natural resonant frequency to the oscillating circuit, adjusting the frequency of the beam drive signal toward coincidence with the natural resonant frequency. A shield electrode can be formed on the flexure beam between the piezoresistor and the drive electrode, to insure against parasitic capacitance. In alternative embodiments, the drive signal is applied to one of the bias electrodes to oscillate the beam, and beam oscillation is sensed capacitively.

摘要翻译： 共振应变计包括硅衬底，在两端附着到衬底的多晶硅弯曲梁和与衬底配合的多晶硅刚性盖，以将挠曲梁封闭在密封的真空室内。 在盖上形成上部偏置电极，并且在基板上直接形成下部偏置电极，并将其与挠曲梁间隔开。 驱动电极形成在梁上或梁上，中心在上偏置电极和下偏置电极之间横向相对于光束伸长方向。 上电极和下电极以恒定的电压电平被偏置，具有相等的幅度和相反的极性。 通常施加在地面上的驱动电极通过施加振荡驱动电压来选择性地充电，以引起光束的机械振荡。 形成在光束上的压敏电阻元件感测光束振荡，并提供指示输入到驱动光束的振荡器电路的位置。 光束倾向于以其固有谐振频率振荡。 因此，压电晶体管向振荡电路提供固有谐振频率，从而将光束驱动信号的频率调整为与固有谐振频率一致。 可以在压敏电阻和驱动电极之间的挠曲束上形成屏蔽电极，以确保寄生电容。 在替代实施例中，将驱动信号施加到偏置电极之一以振荡该光束，并且电容地感测光束振荡。

公开(公告)号：US4853669A

公开(公告)日：1989-08-01

申请号：US174821

申请日：1988-03-29

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： G01L9/00

CPC分类号： B81C1/00333 ,  G01L9/0042 ,  B81C2203/0145

摘要： Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) or the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post. The cavity (36) may be sealed off from the external atmosphere by a second vapor deposition of polysilicon or silicon nitride, which fills up and seals off the channels (35), or by exposing the substrate and the structure thereon to an oxidizing ambient which results in growth of silicon dioxide in the channels sufficient to seal off the channels. Deflection of the membrane spanning the cavity occurring as a result of pressure changes, may be detected, for example, by piezoresistive devices formed on the membrane.

摘要翻译： 通过例如在较大的二氧化硅柱（22）上沉积硅烷气体的多晶硅层（32），在半导体衬底（20）的单个表面上形成适合用作压力传感器的密封空腔结构，以及 较小的二氧化硅脊（27）从柱向外导出。 掩模和蚀刻多晶硅层以暴露脊的外边缘，然后将整个结构浸入蚀刻剂中，该蚀刻剂蚀刻形成脊和柱而不是衬底（20）或沉积的多晶硅层（32）的二氧化硅 ）。 空腔结构导致通道（35）被置于脊之外并且与大气连通延伸到离开柱的空腔（36）。 空腔（36）可以通过第二次多晶硅或氮化硅气相沉积从外部空气中密封，多晶硅或氮化硅填充并密封通道（35），或通过将衬底及其结构暴露于氧化环境 导致通道中二氧化硅的生长足以密封通道。 可以例如通过形成在膜上的压阻器件来检测跨越由于压力变化而发生的空腔的膜的偏转。

公开(公告)号：US4897360A

公开(公告)日：1990-01-30

申请号：US131082

申请日：1987-12-09

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： C30B28/14 ,  C23C16/24 ,  C30B29/06 ,  C30B33/02 ,  G01L9/00 ,  G03F1/20 ,  G03F1/22 ,  H01L21/027 ,  H01L21/20 ,  H01L21/30 ,  H01L21/322 ,  H01L21/324 ,  H01L29/84

CPC分类号： G03F1/20 ,  G01L9/0042 ,  G03F1/22 ,  H01L21/3221 ,  Y10S148/025 ,  Y10S148/097 ,  Y10S148/122 ,  Y10S438/977

摘要： Polycrystalline silicon is deposited in a film onto the surface of a substrate which has been carefully prepared to eliminate any defects or contaminants which could nucleate crystal growth on the substrate. The deposition is carried out by low pressure decomposition of silane at substantially 580.degree. C. to cause a film of fine grained crystals of polysilicon to be formed having grain sizes averaging less than about 300 Angstroms after annealing. Such a film is very uniform and smooth, having a surface roughness less than about 100 Angstroms RMS. Annealing of the film and substrate at a low temperature results in a compressive strain in the field that decreases over the annealing time, annealing at high temperatures (e.g., over 1050.degree. C.) yields substantially zero strain in the film, and annealing at intermediate temperatures (e.g., 650.degree. C. to 950.degree. C.) yields tensile strain at varying strain levels depending on the annealing temperature and time. Further processing of the polysilicon films and the substrate can yield isolated diaphragms of the polysilicon film which are supported only at edges by the substrate and which have substantial lateral dimensions, e.g., 1 cm by 1 cm. Such that structures can be used as pressure sensor diaphragms, X-ray masks, and optical filters, and can be provided with holes of varying sizes, shape and number, which can serve as X-ray mask patterns. The diaphragms can be provided with numerous holes of uniform size and spacing which allows the diaphragms to be used as filters in ultrafiltration applications.

摘要翻译： 将多晶硅沉积在已经经过仔细准备以消除可能使基底上晶体生长成核的任何缺陷或污染物的基底表面上。 沉积通过在大约580℃下低分子量的硅烷进行，以形成晶粒尺寸平均小于约300埃的多晶硅晶粒。 这种膜非常均匀和光滑，具有小于约100埃的表面粗糙度。 在低温下对膜和基材进行退火导致在退火时间内减小的场中的压缩应变，在高温下退火（例如，超过1050℃）在膜中产生基本上零应变，并在中间退火 温度（例如650℃至950℃）根据退火温度和时间在变化的应变水平下产生拉伸应变。 多晶硅膜和衬底的进一步处理可以产生多晶硅膜的隔离膜，其仅由衬底在边缘被支撑，并且具有大的横向尺寸，例如1cm×1cm。 这样的结构可以用作压力传感器膜片，X射线掩模和滤光器，并且可以设置有可以用作X射线掩模图案的不同尺寸，形状和数量的孔。 隔膜可以设置有许多均匀尺寸和间隔的孔，这允许隔膜在超滤应用中用作过滤器。

公开(公告)号：US4996082A

公开(公告)日：1991-02-26

申请号：US350571

申请日：1989-05-11

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： G01L9/00

CPC分类号： G01L9/0042

摘要： Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) of the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post. The cavity (36) may be sealed off from the external atmosphere by a second vapor deposition of polysilicon or silicon nitride, which fills up and seals off the channels (35), or by exposing the substrate and the structure thereon to an oxidizing ambient which results in growth of silicon dioxide in the channels sufficient to seal off the channels. Deflection of the membrane spanning the cavity occurring as a result of pressure changes, may be detected, for example, by piezoresistive devices formed on the membrane.

摘要翻译： 通过例如在较大的二氧化硅柱（22）上沉积硅烷气体的多晶硅层（32），在半导体衬底（20）的单个表面上形成适合用作压力传感器的密封空腔结构，以及 较小的二氧化硅脊（27）从柱向外导出。 掩模和蚀刻多晶硅层以暴露脊的外边缘，然后将整个结构浸入蚀刻剂中，该蚀刻剂蚀刻形成脊和柱的二氧化硅而不是沉积的多晶硅层（32）的衬底（20） ）。 空腔结构导致通道（35）被置于脊之外并且与大气连通延伸到离开柱的空腔（36）。 空腔（36）可以通过第二次多晶硅或氮化硅气相沉积从外部空气中密封，多晶硅或氮化硅填充并密封通道（35），或通过将衬底及其结构暴露于氧化环境 导致通道中二氧化硅的生长足以密封通道。 可以例如通过形成在膜上的压阻器件来检测跨越由于压力变化而发生的空腔的膜的偏转。

公开(公告)号：US4744863A

公开(公告)日：1988-05-17

申请号：US855806

申请日：1986-04-24

申请人： Henry Guckel ,  David W. Burns

发明人： Henry Guckel ,  David W. Burns

IPC分类号： G01L9/00 ,  H01L21/306 ,  B05D7/22 ,  H01L29/84 ,  H01L41/08

CPC分类号： G01L9/0042 ,  Y10T29/49103

摘要： Sealed cavity structures suitable for use as pressure transducers are formed on a single surface of a semiconductor substrate (20) by, for example, deposit of a polycrystalline silicon layer (32) from silane gas over a relatively large silicon dioxide post (22) and smaller silicon dioxide ridges (27) leading outwardly from the post. The polysilicon layer is masked and etched to expose the outer edges of the ridges and the entire structure is then immersed in an etchant which etches the silicon dioxide forming the ridges and the post but not the substrate (20) or the deposited polysilicon layer (32). A cavity structure results in which channels (35) are left in place of the ridges and extend from communication with the atmosphere to the cavity (36) left in place of the post. The cavity (36) may be sealed off from the external atmosphere by a second vapor deposition of polysilicon or silicon nitride, which fills up and seals off the channels (35), or by exposing the substrate and the structure thereon to an oxidizing ambient which results in growth of silicon dioxide in the channels sufficient to seal off the channels. Deflection of the membrane spanning the cavity occurring as a result of pressure changes, may be detected, for example, by piezoresistive devices formed on the membrane.

摘要翻译： 通过例如在较大的二氧化硅柱（22）上沉积硅烷气体的多晶硅层（32），在半导体衬底（20）的单个表面上形成适合用作压力传感器的密封空腔结构，以及 较小的二氧化硅脊（27）从柱向外导出。 掩模和蚀刻多晶硅层以暴露脊的外边缘，然后将整个结构浸入蚀刻剂中，该蚀刻剂蚀刻形成脊和柱而不是衬底（20）或沉积的多晶硅层（32）的二氧化硅 ）。 空腔结构导致通道（35）被置于脊之外并且与大气连通延伸到离开柱的空腔（36）。 空腔（36）可以通过第二次多晶硅或氮化硅气相沉积从外部空气中密封，多晶硅或氮化硅填充并密封通道（35），或通过将衬底及其结构暴露于氧化环境 导致通道中二氧化硅的生长足以密封通道。 可以例如通过形成在膜上的压阻器件来检测跨越由于压力变化而发生的空腔的膜的偏转。

公开(公告)号：US20210124544A1

公开(公告)日：2021-04-29

申请号：US17083274

申请日：2020-10-28

申请人： David W. Burns ,  Debra Brubaker Burns

发明人： David W. Burns ,  Debra Brubaker Burns

IPC分类号： G06F3/14 ,  G06F1/16

摘要： A mobile display device may include a first display panel with a display screen having a viewing surface and a second display panel with a display screen having a viewing surface. The display panels may be coupled with a multi-position hinge. A first operating system may be coupled to the first display panel and a second operating system may be coupled to the second display panel. The first operating system may operate independently of the second operating system and the second operating system may operate independently of the first operating system.

公开(公告)号：US08850165B2

公开(公告)日：2014-09-30

申请号：US13155055

申请日：2011-06-07

申请人： David W. Burns ,  James D. Allen ,  Michael D. Upton ,  Darrell D. Boggs ,  David J. Sager

发明人： David W. Burns ,  James D. Allen ,  Michael D. Upton ,  Darrell D. Boggs ,  David J. Sager

IPC分类号： G06F9/38 ,  G06F9/48

CPC分类号： G06F9/4881 ,  G06F9/3851

摘要： In a multi-threaded processor, thread priority variables are set up in memory. The actual assignment of thread priority is based on the expiration of a thread precedence counter. To further augment, the effectiveness of the thread precedence counters, starting counters are associated with each thread that serve as a multiplier for the value to be used in the thread precedence counter. The value in the starting counters are manipulated so as to prevent one thread from getting undue priority to the resources of the multi-threaded processor.

摘要翻译： 在多线程处理器中，线程优先级变量被设置在内存中。 线程优先级的实际分配基于线程优先级计数器的到期。 为了进一步扩展，线程优先级计数器的有效性，起始计数器与用作在线程优先级计数器中使用的值的乘数的每个线程相关联。 操作起始计数器中的值以防止一个线程对多线程处理器的资源不适当地优先。

公开(公告)号：US20110239221A1

公开(公告)日：2011-09-29

申请号：US13155055

申请日：2011-06-07

申请人： David W. Burns ,  James D. Allen ,  Michael D. Upton ,  Darrell D. Boggs ,  David J. Sager

发明人： David W. Burns ,  James D. Allen ,  Michael D. Upton ,  Darrell D. Boggs ,  David J. Sager

IPC分类号： G06F9/46

CPC分类号： G06F9/4881 ,  G06F9/3851

摘要： In a multi-threaded processor, thread priority variables are set up in memory. The actual assignment of thread priority is based on the expiration of a thread precedence counter. To further augment, the effectiveness of the thread precedence counters, starting counters are associated with each thread that serve as a multiplier for the value to be used in the thread precedence counter. The value in the starting counters are manipulated so as to prevent one thread from getting undue priority to the resources of the multi-threaded processor.

摘要翻译： 在多线程处理器中，线程优先级变量被设置在内存中。 线程优先级的实际分配基于线程优先级计数器的到期。 为了进一步扩展，线程优先级计数器的有效性，起始计数器与用作在线程优先级计数器中使用的值的乘数的每个线程相关联。 操作起始计数器中的值以防止一个线程对多线程处理器的资源不适当地优先。

公开(公告)号：US07877583B2

公开(公告)日：2011-01-25

申请号：US12267394

申请日：2008-11-07

申请人： David W. Burns ,  James D. Allen ,  Michael D. Upton ,  Darrell D. Boggs ,  David J. Sager

发明人： David W. Burns ,  James D. Allen ,  Michael D. Upton ,  Darrell D. Boggs ,  David J. Sager

IPC分类号： G06F9/30

CPC分类号： G06F9/4881 ,  G06F9/3851

摘要： In a multi-threaded processor, thread priority variables are set up in memory. The actual assignment of thread priority is based on the expiration of a thread precedence counter. To further augment, the effectiveness of the thread precedence counters, starting counters are associated with each thread that serve as a multiplier for the value to be used in the thread precedence counter. The value in the starting counters are manipulated so as to prevent one thread from getting undue priority to the resources of the multi-threaded processor.