公开(公告)号：US08872509B2

公开(公告)日：2014-10-28

申请号：US13218191

申请日：2011-08-25

申请人： Erik Christopher Hatch ,  Peter Bostwick ,  Brandon Given ,  Dang Dinh Dang

发明人： Erik Christopher Hatch ,  Peter Bostwick ,  Brandon Given ,  Dang Dinh Dang

IPC分类号： H02K11/00

CPC分类号： H02K11/0015 ,  H02K11/21 ,  Y10T29/49002

摘要： An electric motor assembly includes a motor shaft rotatable about a longitudinal axis, an angular position sensor rotor, and a deformable pin. The motor shaft has an axial keyway formed therein, and the axial keyway has a nominal keyway dimension. The angular position sensor rotor is coupled to the motor shaft to rotate with the motor shaft. The angular position sensor rotor has an axial key to fit within the axial keyway of the motor shaft, and the axial key has a nominal key dimension that is less than the nominal keyway dimension. The deformable pin is located in the axial keyway under compression between the axial key and the motor shaft to inhibit rotational shifting of the angular position sensor rotor relative to the motor shaft.

摘要翻译： 电动机组件包括可围绕纵向轴线旋转的电动机轴，角位置传感器转子和可变形销。 电动机轴具有形成在其中的轴向键槽，并且轴向键槽具有标称键槽尺寸。 角位置传感器转子联接到电动机轴上以与电动机轴一起旋转。 角位置传感器转子具有轴向键以配合在电动机轴的轴向键槽内，并且轴向键具有小于标称键槽尺寸的标称键尺寸。 可变形销位于轴向键和轴之间的轴向键槽中，以防止角位置传感器转子相对于电动机轴的转动。

公开(公告)号：US20120146098A1

公开(公告)日：2012-06-14

申请号：US12967771

申请日：2010-12-14

申请人： Mattias E. DAHLSTROM ,  Dinh DANG ,  Qizhi LIU ,  Ramana M. MALLADI

发明人： Mattias E. DAHLSTROM ,  Dinh DANG ,  Qizhi LIU ,  Ramana M. MALLADI

IPC分类号： H01L29/70 ,  H01L21/328 ,  H01L21/762

CPC分类号： H01L29/66242 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/76224 ,  H01L21/763 ,  H01L23/367 ,  H01L23/3677 ,  H01L23/373 ,  H01L29/0821 ,  H01L29/7371 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of making a semiconductor structure includes forming a trench through a shallow trench isolation (STI) structure and into a substrate, and forming a liner including an electrical insulator material on sidewalls of the trench. The method also includes forming a core including a high thermal conductivity material in the trench and on the liner, and forming a cap in the trench and on the core.

摘要翻译： 制造半导体结构的方法包括通过浅沟槽隔离（STI）结构形成沟槽并且形成衬底，以及在沟槽的侧壁上形成包括电绝缘体材料的衬垫。 该方法还包括在沟槽和衬垫上形成包括高导热性材料的芯，并在沟槽和芯上形成帽。

公开(公告)号：US20110095163A1

公开(公告)日：2011-04-28

申请号：US12607727

申请日：2009-10-28

申请人： DUC Q. PHAN ,  KHIET LE ,  TERENCE G. WARD ,  YUNQI ZHENG ,  GABRIEL GALLEGOS-LOPEZ ,  DANG DINH DANG

发明人： DUC Q. PHAN ,  KHIET LE ,  TERENCE G. WARD ,  YUNQI ZHENG ,  GABRIEL GALLEGOS-LOPEZ ,  DANG DINH DANG

IPC分类号： F16M13/00

CPC分类号： H02K5/15 ,  F16C19/06 ,  F16C27/04 ,  F16C2380/26 ,  H02K5/24

摘要： Damping mechanisms and motor assemblies are provided. In an embodiment, by way of example only, a damping mechanism includes an end cap, a bearing retainer plate, a bearing damper ring, a bearing assembly, and first and second lateral dampers. The bearing damper ring is disposed in an annular cavity inwardly from an inner diameter surface of the end cap and has a radially inwardly-extending flange. The bearing assembly is disposed in the annular cavity radially inwardly relative to the bearing damper ring. The first lateral damper is disposed between a radially inwardly-extending wall of the end cap and the bearing damper ring. The second lateral damper is disposed between the bearing damper ring and the bearing retainer plate.

摘要翻译： 提供阻尼机构和电机组件。 在一个实施例中，仅作为示例，阻尼机构包括端盖，轴承保持板，轴承阻尼环，轴承组件以及第一和第二横向阻尼器。 轴承阻尼环从端盖的内径表面向内设置在环形空腔中并且具有径向向内延伸的凸缘。 轴承组件相对于轴承阻尼环径向向内设置在环形腔中。 第一横向阻尼器设置在端盖的径向向内延伸的壁和轴承阻尼环之间。 第二横向阻尼器设置在轴承阻尼环和轴承保持板之间。

公开(公告)号：US20090093092A1

公开(公告)日：2009-04-09

申请号：US11868553

申请日：2007-10-08

申请人： DINH DANG ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

发明人： DINH DANG ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

IPC分类号： H01L21/336 ,  H01L21/283

CPC分类号： H01L21/84 ,  H01L21/28518 ,  H01L21/743

摘要： A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.

公开(公告)号：US20070226830A1

公开(公告)日：2007-09-27

申请号：US11602163

申请日：2006-11-20

申请人： Roger Pennell ,  Kenneth Feldmann ,  Yu-Ping Lu ,  Yiwen Fang ,  Shing Kwok ,  Van-Dinh Dang ,  Zhihong Cook ,  Jack Okamuro ,  Nestor Apuya ,  Richard Schneeberger ,  Emilio Margolles-Clark ,  Edward Kiegle ,  Leonard Medrano

发明人： Roger Pennell ,  Kenneth Feldmann ,  Yu-Ping Lu ,  Yiwen Fang ,  Shing Kwok ,  Van-Dinh Dang ,  Zhihong Cook ,  Jack Okamuro ,  Nestor Apuya ,  Richard Schneeberger ,  Emilio Margolles-Clark ,  Edward Kiegle ,  Leonard Medrano

IPC分类号： A01H1/00 ,  C07H21/04 ,  C12N15/82 ,  C12N5/04

CPC分类号： C12N15/8216 ,  C12N15/8225 ,  C12N15/8226 ,  C12N15/8227 ,  C12N15/8229 ,  C12N15/823 ,  C12N15/8233 ,  C12N15/8234 ,  C12N15/8237

摘要： The present invention is directed to promoter sequences and promoter control elements, polynucleotide constructs comprising the promoters and control elements, and methods of identifying the promoters, control elements, or fragments thereof. The invention further relates to the use of the present promoters or promoter control elements to modulate transcript levels.

公开(公告)号：US08497617B2

公开(公告)日：2013-07-30

申请号：US12503623

申请日：2009-07-15

申请人： Dang Dinh Dang ,  Rolf Blissenbach ,  David Schauer ,  John Wattleworth ,  Michael Milani ,  Erik Hatch

发明人： Dang Dinh Dang ,  Rolf Blissenbach ,  David Schauer ,  John Wattleworth ,  Michael Milani ,  Erik Hatch

IPC分类号： H02K3/00

CPC分类号： H02K3/12 ,  B60L2200/00 ,  H02K15/0421 ,  Y02T10/641 ,  Y10T29/49009

摘要： A stator includes a stator core, a plurality of slots, and a conductor. The plurality of slots are formed within the stator core. The conductor is disposed continuously within at least two of the plurality of openings.

摘要翻译： 定子包括定子芯，多个槽和导体。 多个槽形成在定子铁心内。 导体连续设置在多个开口中的至少两个开口内。

公开(公告)号：US20120038024A1

公开(公告)日：2012-02-16

申请号：US12853532

申请日：2010-08-10

申请人： Alan B. BOTULA ,  Dinh DANG ,  James S. DUNN ,  Alvin J. JOSEPH ,  Peter J. LINDGREN

发明人： Alan B. BOTULA ,  Dinh DANG ,  James S. DUNN ,  Alvin J. JOSEPH ,  Peter J. LINDGREN

IPC分类号： H01L29/06 ,  H01L21/02 ,  H01L21/762

CPC分类号： H01L21/76283 ,  H01L21/76289 ,  H01L27/0738 ,  H01L27/1203 ,  H01L29/0649

摘要： A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.

摘要翻译： 绝缘体上硅（SOI）衬底中的低谐波射频（RF）开关及其制造方法。 一种方法包括通过绝缘体层形成至少一个沟槽。 所述至少一个沟槽与形成在所述绝缘体层上的有源区域中的器件相邻。 该方法还包括在绝缘体层之下的衬底中形成至少一个空腔，并从该至少一个沟槽横向延伸到该器件的下方。

公开(公告)号：US07939896B2

公开(公告)日：2011-05-10

申请号：US12613631

申请日：2009-11-06

申请人： Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

发明人： Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

IPC分类号： H01L29/78

CPC分类号： H01L27/1203 ,  H01L21/28518 ,  H01L21/743 ,  H01L21/84

摘要： A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.

摘要翻译： 低电阻接触结构及其制造方法。 该结构包括通过上硅层和掩埋氧化物层到硅绝缘衬底的下硅层的多晶硅接触。 上硅层的区域围绕多晶硅接触并且多晶硅接触的顶表面和上硅层的周围区域是金属硅化物，提供大于多晶硅接触顶表面的扩展接触面积。

公开(公告)号：US07101806B2

公开(公告)日：2006-09-05

申请号：US10711953

申请日：2004-10-15

申请人： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

发明人： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

IPC分类号： H01L21/302

CPC分类号： H01L21/31116 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/66181 ,  Y10S438/952

摘要： A method for etching a deep trench in a semiconductor substrate. The method comprises the steps of (a) forming a hard mask layer on top of the semiconductor substrate, (b) etching a hard mask opening in the hard mask layer so as to expose the semiconductor substrate to the atmosphere through the hard mask layer opening, wherein the step of etching the hard mask opening includes the step of etching a bottom portion of the hard mask opening such that a side wall of the bottom portion of the hard mask opening is substantially vertical, and (c) etching a deep trench in the substrate via the hard mask opening.

摘要翻译： 一种用于蚀刻半导体衬底中的深沟槽的方法。 该方法包括以下步骤：（a）在半导体衬底的顶部上形成硬掩模层，（b）蚀刻硬掩模层中的硬掩模开口，以通过硬掩模层开口将半导体衬底暴露于大气中 其中蚀刻硬掩模开口的步骤包括蚀刻硬掩模开口的底部以使得硬掩模开口的底部的侧壁基本垂直的步骤，以及（c）蚀刻硬掩模开口的底部的深沟槽 基板通过硬掩模开口。

公开(公告)号：US20060081556A1

公开(公告)日：2006-04-20

申请号：US10711953

申请日：2004-10-15

申请人： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey Maling ,  Lisa Ninomiya ,  Bruce Porth ,  Steven Shank ,  Jessica Trapasso

发明人： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey Maling ,  Lisa Ninomiya ,  Bruce Porth ,  Steven Shank ,  Jessica Trapasso

IPC分类号： H01B13/00 ,  B44C1/22

CPC分类号： H01L21/31116 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/66181 ,  Y10S438/952

摘要： A method for etching a deep trench in a semiconductor substrate. The method comprises the steps of (a) forming a hard mask layer on top of the semiconductor substrate, (b) etching a hard mask opening in the hard mask layer so as to expose the semiconductor substrate to the atmosphere through the hard mask layer opening, wherein the step of etching the hard mask opening includes the step of etching a bottom portion of the hard mask opening such that a side wall of the bottom portion of the hard mask opening is substantially vertical, and (c) etching a deep trench in the substrate via the hard mask opening.

摘要翻译： 一种用于蚀刻半导体衬底中的深沟槽的方法。 该方法包括以下步骤：（a）在半导体衬底的顶部上形成硬掩模层，（b）蚀刻硬掩模层中的硬掩模开口，以通过硬掩模层开口将半导体衬底暴露于大气中 其中蚀刻硬掩模开口的步骤包括蚀刻硬掩模开口的底部以使得硬掩模开口的底部的侧壁基本垂直的步骤，以及（c）蚀刻硬掩模开口的底部的深沟槽 基板通过硬掩模开口。