利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

35 条记录 (耗时 0.026 秒)

    Wafer thickness control during backside grind
    3.
    发明授权
    Wafer thickness control during backside grind 失效

    公开(公告)号：US06368881B1

    公开(公告)日：2002-04-09

    申请号：US09516445

    申请日：2000-02-29

    申请人： Donald W. Brouillette ,  Thomas G. Ference ,  Harold G. Linde ,  Michael S. Hibbs ,  Ronald L. Mendelson

    发明人： Donald W. Brouillette ,  Thomas G. Ference ,  Harold G. Linde ,  Michael S. Hibbs ,  Ronald L. Mendelson

    IPC分类号： H01L2100

    CPC分类号： H01L22/26

    摘要： A method and apparatus for controlling the thickness of a semiconductor wafer during a backside grinding process are disclosed. The present invention uses optical measurement of the wafer thickness during a backside grinding process to determine the endpoint of the grinding process. Preferred methods entail measuring light transmitted through or reflected by a semiconductor wafer as a function of angle of incidence or of wavelength. This information is then used, through the use of curve fitting techniques or formulas, to determine the thickness of the semiconductor wafer. Furthermore, the present invention may be used to determine if wedging of the semiconductor occurs and, if wedging does occur, to provide leveling information to the thinning apparatus such that a grinding surface can be adjusted to reduce or eliminate wedging.

    Method of manufacture of damascene reticle
    4.
    发明授权
    Method of manufacture of damascene reticle 有权
    镶嵌光罩的制造方法

    公开(公告)号：US08110321B2

    公开(公告)日：2012-02-07

    申请号：US11749384

    申请日：2007-05-16

    申请人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

    发明人： Kevin S. Petrarca ,  Donald F. Canaperi ,  Mahadevaiyer Krishnan ,  Rebecca D. Mih ,  Steven Steen ,  Henry Grabarz ,  Michael S. Hibbs

    IPC分类号： G03F1/16 ,  B24B5/00

    CPC分类号： G03F1/00 ,  G03F1/26 ,  G03F1/50

    摘要： A method for manufacturing an optical projection reticle employs a damascene process. First feature recesses are etched into a projection reticle mask plate which is transmissive or transparent. Then feature recesses are tilled with a radiation transmissivity modifying material comprising a partially transmissive material and/or a radiation absorber for absorbing actinic radiation. Sacrificial materials may be added to the recess temporarily prior to filling the recess to provide gaps juxtaposed with the material filling the recess. Thereafter, the sacrificial materials are removed. Then the projection mask is planarized leaving feature recesses filled with transmissivity modifying material, and any gaps desired. The projection mask is planarized while retained in a fixture holding it in place during polishing with a polishing tool and a slurry.

    摘要翻译： 光学投影掩模版的制造方法采用镶嵌工艺。 第一特征凹槽被蚀刻到透射或透明的突出掩模掩模板中。 然后，特征凹部用包括用于吸收光化辐射的部分透射材料和/或辐射吸收体的辐射透射率改性材料研磨。 牺牲材料可以在填充凹部之前临时添加到凹部中，以提供与填充凹部的材料并置的间隙。 此后，去除牺牲材料。 然后将投影掩模平坦化，留下填充有透射率改性材料的特征凹部，以及任何期望的间隙。 投影面罩被平坦化，同时保持在用抛光工具和浆料抛光过程中将其固定在位置的夹具中。

    Assist features for contact hole mask patterns
    5.
    发明授权
    Assist features for contact hole mask patterns 失效
    辅助接触孔掩模图案的功能

    公开(公告)号：US06627361B2

    公开(公告)日：2003-09-30

    申请号：US09901241

    申请日：2001-07-09

    申请人： Orest Bula ,  Michael S. Hibbs ,  Steven J. Holmes ,  Paul A. Rabidoux

    发明人： Orest Bula ,  Michael S. Hibbs ,  Steven J. Holmes ,  Paul A. Rabidoux

    IPC分类号： G03F900

    CPC分类号： G03F1/36 ,  G03F7/095

    摘要： An assist feature is formed on a lithographic reticle or mask using a hybrid resist and an exposure dose such that only an annular area is effectively exposed having a width that is potentially less than the minimum feature size that can be resolved by the mask exposure tool to simultaneously or sequentially form both a feature of interest and an assist feature for enhancing imaging of the feature of interest when the feature is printed to a wafer. Since the assist feature can be imaged simultaneously with the feature of interest or multiple assist features imaged concurrently, possibly between closely spaced features, data volume and mask writing time are greatly reduced. The invention is particularly applicable to the scaling of contact holes for connections to active devices in extremely high density integrated circuits.

    摘要翻译： 使用混合抗蚀剂和曝光剂量在光刻掩模版或掩模上形成辅助特征，使得只有环形区域被有效地暴露，其宽度可能小于可由掩模曝光工具解析的最小特征尺寸， 同时或顺序地形成感兴趣的特征和当将特征印刷到晶片时增强感兴趣特征的成像的辅助特征。 由于可以与感兴趣的特征或同时成像的多个辅助特征（可能在紧密间隔的特征之间）同时成像辅助特征，所以数据量和掩模写入时间被大大减少。 本发明特别适用于用于连接到极高密度集成电路中的有源器件的接触孔的缩放。

    Multiple polarity mask exposure method
    6.
    发明授权
    Multiple polarity mask exposure method 失效
    多极性掩模曝光方法

    公开(公告)号：US6110624A

    公开(公告)日：2000-08-29

    申请号：US225114

    申请日：1999-01-04

    申请人： Michael S. Hibbs ,  Timothy E. Neary ,  David S. O'Grady ,  Denis M. Rigaill

    发明人： Michael S. Hibbs ,  Timothy E. Neary ,  David S. O'Grady ,  Denis M. Rigaill

    IPC分类号： G03F7/095 ,  G03F7/20 ,  H05K3/06 ,  G03F9/00 ,  G03C5/00

    CPC分类号： G03F7/095 ,  G03F7/2022 ,  G03F7/2037 ,  H05K3/064 ,  H05K2203/0505 ,  H05K2203/0577

    摘要： A patterned mask and method of forming a patterned mask over a substrate, comprising forming a first resist layer over the substrate, forming a second resist layer over the first resist layer, patterning the first resist using energy selective to the first resist layer to form a first patterned resist, and patterning the second resist using energy selective to the second resist layer to form a second patterned resist, wherein the first patterned resist and the second patterned resist form the patterned mask.

    摘要翻译： 一种图案化掩模和在衬底上形成图案化掩模的方法，包括在衬底上形成第一抗蚀剂层，在第一抗蚀剂层上形成第二抗蚀剂层，使用对第一抗蚀剂层的能量选择性形成第一抗蚀剂以形成第一抗蚀剂层， 并且使用对第二抗蚀剂层选择性的能量来形成第二抗蚀剂以形成第二图案化抗蚀剂，其中第一图案化抗蚀剂和第二图案化抗蚀剂形成图案化掩模。

    EMF CORRECTION MODEL CALIBRATION USING ASYMMETRY FACTOR DATA OBTAINED FROM AERIAL IMAGES OR A PATTERNED LAYER
    7.
    发明申请
    EMF CORRECTION MODEL CALIBRATION USING ASYMMETRY FACTOR DATA OBTAINED FROM AERIAL IMAGES OR A PATTERNED LAYER 有权
    EMF校正模型校准使用不对称因子数据从空中图像或图形层

    公开(公告)号：US20110239169A1

    公开(公告)日：2011-09-29

    申请号：US12748513

    申请日：2010-03-29

    申请人： Jaione Tirapu-Azpiroz ,  Timothy A. Brunner ,  Michael S. Hibbs ,  Alan E. Rosenbluth

    发明人： Jaione Tirapu-Azpiroz ,  Timothy A. Brunner ,  Michael S. Hibbs ,  Alan E. Rosenbluth

    IPC分类号： G06F17/50

    CPC分类号： G03F1/38 ,  G03F1/70 ,  G03F7/70283 ,  G03F7/70441

    摘要： A computer-implemented method is provided for generating an electromagnetic field (EMF) correction boundary layer (BL) model corresponding to a mask, which can include using a computer to perform a method, in which asymmetry factor data is determined from aerial image measurements of a plurality of different gratings representative of features provided on a mask, wherein the aerial image measurements having been made at a plurality of different focus settings. The method may also include determining boundary layer (BL) model parameters of an EMF correction BL model corresponding to the mask by fitting to the asymmetry factor measurements. Alternatively, the asymmetry factor data can be determined from measurements of line widths of photoresist patterns, wherein the photoresist patterns correspond to images cast by a plurality of gratings at a plurality of different defocus distances, and the gratings can be representative of features of a mask.

    摘要翻译： 提供了一种计算机实现的方法，用于产生对应于掩模的电磁场（EMF）校正边界层（BL）模型，其可以包括使用计算机执行一种方法，其中由不确定因素数据从空间图像测量 代表提供在掩模上的特征的多个不同光栅，其中已经在多个不同焦点设置进行了空间图像测量。 该方法还可以包括通过拟合不对称因子测量来确定对应于掩模的EMF校正BL模型的边界层（BL）模型参数。 或者，可以通过对光致抗蚀剂图案的线宽度的测量来确定不对称因子数据，其中光致抗蚀剂图案对应于由多个不同散焦距离处的多个光栅投射的图像，并且光栅可以代表掩模的特征 。

    Mask defect analysis system
    8.
    发明授权
    Mask defect analysis system 失效
    面膜缺陷分析系统

    公开(公告)号：US07257247B2

    公开(公告)日：2007-08-14

    申请号：US09683836

    申请日：2002-02-21

    申请人： James A. Bruce ,  Orest Bula ,  Edward W. Conrad ,  William C. Leipold ,  Michael S. Hibbs ,  Joshua J. Krueger

    发明人： James A. Bruce ,  Orest Bula ,  Edward W. Conrad ,  William C. Leipold ,  Michael S. Hibbs ,  Joshua J. Krueger

    IPC分类号： G06K9/00

    CPC分类号： G03F1/84

    摘要： An automated system for analyzing mask defects in a semiconductor manufacturing process is presented. This system combines results from an inspection tool and design layout data from a design data repository corresponding to each mask layer being inspected with a computer program and a predetermined rule set to determine when a defect on a given mask layer has occurred. Mask inspection results include the presence, location and type (clear or opaque) of defects. Ultimately, a determination is made as to whether to scrap, repair or accept a given mask based on whether the defect would be likely to cause product failure. Application of the defect inspection data to the design layout data for each mask layer being inspected prevents otherwise acceptable wafer masks from being scrapped when the identified defects are not in critical areas of the mask.

    摘要翻译： 提出了一种用于分析半导体制造过程中的掩模缺陷的自动化系统。 该系统将来自检查工具的结果和来自被检查的每个掩模层的设计数据存储库的设计布局数据与计算机程序和预定规则集相结合，以确定给定掩模层上的缺陷何时发生。 掩模检查结果包括缺陷的存在，位置和类型（透明或不透明）。 最终，根据缺陷是否可能导致产品故障，确定是否废除，修理或接受给定的掩模。 将缺陷检查数据应用于被检查的每个掩模层的设计布局数据防止当所识别的缺陷不在掩模的关键区域时被报废。

    Pellicle distortion reduction
    9.
    发明授权
    Pellicle distortion reduction 失效

    公开(公告)号：US07061590B2

    公开(公告)日：2006-06-13

    申请号：US10737046

    申请日：2003-12-16

    申请人： Michael S. Hibbs

    发明人： Michael S. Hibbs

    IPC分类号： G03B27/62 ,  G03B27/58

    CPC分类号： G03F1/64 ,  G03B27/62

    摘要： The invention provides systems and a method for reducing pellicle distortion. One feature of the invention reduces distortion of a pellicle by providing an airtight mounting structure for coupling a pellicle to a mask; and a port on the mounting structure though which a pressure difference can be created between the interior portion and an exterior environment. Hence, distortion can be reduced by controlling the pressure in the interior portion between the pellicle, the pellicle mounting structure and the mask. Another feature places an aerodynamic fairing adjacent the mask to reduce aerodynamic drag and, hence, suppress turbulent air flow over the pellicle. The features can be used separately or in combination.

    Apparatus and method for inspection of photolithographic mask
    10.
    发明授权
    Apparatus and method for inspection of photolithographic mask 失效
    用于光刻掩模检查的装置和方法

    公开(公告)号：US06950183B2

    公开(公告)日：2005-09-27

    申请号：US10248808

    申请日：2003-02-20

    申请人： Timothy A. Brunner ,  Michael S. Hibbs ,  Christopher J. Progler

    发明人： Timothy A. Brunner ,  Michael S. Hibbs ,  Christopher J. Progler

    IPC分类号： G01N21/956 ,  G01N21/88

    CPC分类号： G01N21/95692

    摘要： A method for inspecting masks used to project patterns in photolithographic imaging comprises initially providing a photolithographic mask having a pattern field thereon, where in normal production use the pattern is transferred by a reduction projector as a demagnified pattern on a production substrate, and providing a movable field-defining aperture adjacent the mask, the aperture having a field area less than, and capable of defining a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. The method then includes aligning the field-defining aperture with a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. Using an energy source, the method includes projecting the pattern subfield onto a test substrate and exposing onto the test substrate the pattern subfield at a size between that normally exposed on a production substrate and the actual size of the pattern subfield on the photolithographic mask. Subsequently, the method includes inspecting the exposed pattern subfield on the test substrate for defects in the photolithographic mask.

    摘要翻译： 用于检查用于在光刻成像中投影图案的掩模的方法包括首先提供其上具有图案场的光刻掩模，其中在正常生产中使用图案通过缩小投影仪作为缩小图案转印在生产基板上，并且提供可移动 与该掩模相邻的场限定孔径，该孔径具有小于并且能够限定仅包括整个光刻掩模图案场的一部分的图案子场的场区域。 该方法然后包括将场限定孔与仅包括整个光刻掩模图案场的一部分的图案子场对准。 使用能量源，该方法包括将图案子场投射到测试基板上，并以通常暴露在生产基板上的尺寸与光刻掩模上的图案子场的实际尺寸之间的尺寸将图案子区域暴露在测试基板上。 随后，该方法包括检查在光刻掩模中的缺陷的测试基板上的曝光图案子场。