公开(公告)号：US20100304568A1

公开(公告)日：2010-12-02

申请号：US12752684

申请日：2010-04-01

申请人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

发明人： Seiro MIYOSHI ,  Yasunobu Kai ,  Kentaro Matsunaga ,  Keisuke Kikutani ,  Eishi Shiobara ,  Shinya Takahashi

IPC分类号： H01L21/302 ,  G03F7/20

CPC分类号： G03F1/34 ,  G03F7/095 ,  H01L21/0274 ,  H01L21/31144

摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.

摘要翻译： 图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度， 通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置， 以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂 剩下第二光致抗蚀剂。

公开(公告)号：US5128465A

公开(公告)日：1992-07-07

申请号：US468319

申请日：1990-01-22

申请人： Takashi Kamiya ,  Toshihiko Naito ,  Yuuki Komatu ,  Yasunobu Kai ,  Takaharu Nakamura ,  Manabu Sasho ,  Shigeto Negi ,  Isao Sugiyama ,  Kanemasa Katsu ,  Hiroshi Yamauchi

发明人： Takashi Kamiya ,  Toshihiko Naito ,  Yuuki Komatu ,  Yasunobu Kai ,  Takaharu Nakamura ,  Manabu Sasho ,  Shigeto Negi ,  Isao Sugiyama ,  Kanemasa Katsu ,  Hiroshi Yamauchi

IPC分类号： C07D498/04 ,  C07C237/06 ,  C07D498/08 ,  C07D501/00 ,  C07D501/18 ,  C07D501/24 ,  C07D501/46 ,  C07D501/56 ,  C07D519/00

CPC分类号： C07D498/08 ,  C07C237/06 ,  C07D501/00 ,  Y02P20/55

摘要： A cephem derivative represented by the following formula: ##STR1## wherein R.sub.1 means a fluorine-substituted lower alkyl and A.sub.1 denotes a cyclic or acyclic ammonio group, or a non-toxic salt thereof, is prepared by reacting a compound represented by the following formula: ##STR2## wherein A.sub.1 has the same meaning as defined above, with another compound represented by the following formula: ##STR3## wherein R.sub.1 has the same meaning as defined above, and if necessary, removing the protecting groups.

摘要翻译： 由下式表示的头孢烯衍生物：其中R1表示氟取代的低级烷基，A1表示环状或无环氨基，或其无毒盐，通过使下式表示的化合物 其中A 1具有与上述定义相同的含义，另外由下式表示的化合物：其中R 1具有与上述相同的含义，如有必要，除去保护基。

公开(公告)号：US08865589B2

公开(公告)日：2014-10-21

申请号：US13614217

申请日：2012-09-13

申请人： Takaki Hashimoto ,  Yasunobu Kai ,  Toshiya Kotani

发明人： Takaki Hashimoto ,  Yasunobu Kai ,  Toshiya Kotani

IPC分类号： H01L21/027 ,  H01L21/768 ,  H01L21/311 ,  H01L23/528 ,  H01L21/033 ,  H01L27/115

CPC分类号： H01L23/528 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/768 ,  H01L21/76804 ,  H01L21/76816 ,  H01L21/76895 ,  H01L27/11519 ,  H01L2924/0002 ,  Y10S438/947 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes a plurality of wires arranged in parallel at a predetermined pitch, a plurality at first contacts that are each connected to an odd-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to a wiring direction of the wires, and a plurality of second contacts that are each connected to an even-numbered wire among the wires and are arranged in parallel in an orthogonal direction with respect to the wiring direction of the wires in such a way as to be offset from the first contacts in the wiring direction of the wires, in which the first contacts are offset from the second contacts by a pitch of the wires in an orthogonal direction with respect to the wiring direction of the wires.

摘要翻译： 根据一个实施例，半导体器件包括以预定间距平行布置的多条导线，多个第一触点分别连接到导线之间的奇数编号，并且与正交方向平行布置，与 与导线的布线方向相连接的多个第二触点，以及多个第二触点，每个第二触点各自连接到电线中的偶数线，并且相对于线的布线方向在正交方向上平行布置， 在与导线的布线方向正交的方向上的第一触点相对于第二触点偏离线的间距的方式偏离布线方向的第一触点。

公开(公告)号：US08293456B2

公开(公告)日：2012-10-23

申请号：US12390157

申请日：2009-02-20

申请人： Kazuya Fukuhara ,  Takaki Hashimoto ,  Kazuyuki Masukawa ,  Yasunobu Kai

发明人： Kazuya Fukuhara ,  Takaki Hashimoto ,  Kazuyuki Masukawa ,  Yasunobu Kai

IPC分类号： G03F1/00

CPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/70433

摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.

摘要翻译： 一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。 光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。 布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。 此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

公开(公告)号：US20100202181A1

公开(公告)日：2010-08-12

申请号：US12561531

申请日：2009-09-17

申请人： Takaki HASHIMOTO ,  Hidefumi Mukai ,  Yasunobu Kai ,  Toshiya Kotani

发明人： Takaki HASHIMOTO ,  Hidefumi Mukai ,  Yasunobu Kai ,  Toshiya Kotani

IPC分类号： G11C5/06

CPC分类号： G11C5/063 ,  G11C5/025

摘要： A semiconductor memory device includes a semiconductor substrate on which memory cells are formed. Interconnects are arranged along a first direction above the semiconductor substrate, and have regular intervals along a second direction perpendicular to the first direction. Interconnect contacts connect the interconnects and the semiconductor substrate, are arranged on three or more rows. The center of each of two of the interconnect contacts which are connected to the interconnects adjacent in the second direction deviate from each other along the first direction.

摘要翻译： 半导体存储器件包括形成有存储单元的半导体衬底。 互连件沿着半导体衬底上方的第一方向布置，并且沿着垂直于第一方向的第二方向具有规则的间隔。 互连触点连接互连和半导体衬底，布置在三行或更多行上。 连接到在第二方向相邻的互连件的两个互连触点中的每一个的中心沿着第一方向彼此偏离。

公开(公告)号：US5089491A

公开(公告)日：1992-02-18

申请号：US463518

申请日：1990-01-11

申请人： Takashi Kamiya ,  Toshihiko Naito ,  Shigeto Negi ,  Yuuki Komatu ,  Yasunobu Kai ,  Takaharu Nakamura ,  Isao Sugiyama ,  Yoshimasa Machida ,  Seiichiro Nomoto ,  Kyosuke Kitoh ,  Kanemasa Katsu ,  Hiroshi Yamauchi

发明人： Takashi Kamiya ,  Toshihiko Naito ,  Shigeto Negi ,  Yuuki Komatu ,  Yasunobu Kai ,  Takaharu Nakamura ,  Isao Sugiyama ,  Yoshimasa Machida ,  Seiichiro Nomoto ,  Kyosuke Kitoh ,  Kanemasa Katsu ,  Hiroshi Yamauchi

IPC分类号： C07D501/46 ,  A61K31/545 ,  A61K31/546 ,  C07D20060101 ,  C07D285/08 ,  C07D501/00 ,  C07D501/04 ,  C07D501/24 ,  C07D501/56 ,  C07D519/00

CPC分类号： C07D501/24

摘要： A 3-propenylcephem derivative of the following formula: ##STR1## wherein R.sub.1 represents a fluoro-substituted lower alkyl group or a cyano-substituted lower alkyl group, and A represents a cyclic or an acylic ammonio group, or a pharmaceutically acceptable salt thereof, exhibiting excellent anti-bacterial activities against both Gram-positive bacteria and Gram-negative bacteria; Process for the preparation thereof; Anti-bacterial composition; Intermediate for the 3-propenylcephem derivative; and Process for the preparation of the intermediate.

公开(公告)号：US08423922B2

公开(公告)日：2013-04-16

申请号：US12850082

申请日：2010-08-04

申请人： Yasunobu Kai

发明人： Yasunobu Kai

IPC分类号： G06F17/50

CPC分类号： G06F17/5072 ,  G03F1/36

摘要： In one embodiment, a photomask designing method for creating a pattern layout having an assist pattern placed around a design pattern is disclosed. The method can place a plurality of evaluation points around the design pattern and set an evaluation index for imaging properties of the design pattern on an imaging surface. The method can combine a light intensity distribution of the design pattern with light intensity distributions of the evaluation points to obtain a light intensity distribution on the imaging surface and evaluate the light intensity distribution on the imaging surface using the evaluation index to determine a region having an effective evaluation point placed. In addition, the method can determine a placement condition for the assist pattern based on the region where the effective evaluation point is placed and place the assist pattern around the design pattern based on the placement condition to create the pattern layout.

摘要翻译： 在一个实施例中，公开了一种用于创建具有围绕设计图案放置的辅助图案的图案布局的光掩模设计方法。 该方法可以围绕设计图案放置多个评估点，并且在成像表面上设置用于设计图案的成像属性的评估指标。 该方法可以将设计图案的光强度分布与评估点的光强度分布组合以获得成像表面上的光强度分布，并使用评估指数评估成像表面上的光强度分布，以确定具有 有效的评估点放置。 此外，该方法可以基于放置有效评估点的区域来确定辅助图案的放置条件，并且基于放置条件将辅助图案围绕设计图案放置以创建图案布局。

公开(公告)号：US20120328992A1

公开(公告)日：2012-12-27

申请号：US13606834

申请日：2012-09-07

申请人： Kazuya Fukuhara ,  Takaki Hashimoto ,  Kazuyuki Masukawa ,  Yasunobu Kai

发明人： Kazuya Fukuhara ,  Takaki Hashimoto ,  Kazuyuki Masukawa ,  Yasunobu Kai

IPC分类号： G03F7/20

CPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/70433

摘要： A semiconductor device manufacturing method includes applying illumination light to a photomask, and projecting diffracted light components from the photomask via a projection optical system to form a photoresist pattern on a substrate. The photomask includes a plurality of opening patterns which are arranged on each of a plurality of parallel lines at regular second intervals in a second direction and which have regular first intervals in a first direction perpendicular to the second direction. The plurality of opening patterns arranged on the adjacent ones of the plurality of parallel lines are displaced from each other half the second interval in the second direction. Moreover, the dimensions of the plurality of opening patterns and the complex amplitude transmittance of nontransparent region in the photomask are set so that three of the diffracted light components passing through the pupil of the projection optical system have equal amplitude.

摘要翻译： 一种半导体器件制造方法，包括将照明光施加到光掩模，以及经由投影光学系统从光掩模投射衍射光成分，以在基板上形成光刻胶图案。 光掩模包括多个开口图案，其以在第二方向上的规则的第二间隔布置在多条平行线中的每一条上，并且在垂直于第二方向的第一方向上具有规则的第一间隔。 布置在多条平行线上相邻的多个平行线上的多个开口图案在第二方向上相互偏移第二间隔的一半。 此外，设置多个开口图案的尺寸和光掩模中的非透明区域的复振幅透射率，使得穿过投影光学系统的光瞳的三个衍射光分量具有相等的幅度。

公开(公告)号：US08288812B2

公开(公告)日：2012-10-16

申请号：US12871271

申请日：2010-08-30

申请人： Yasunobu Kai ,  Takaki Hashimoto

发明人： Yasunobu Kai ,  Takaki Hashimoto

IPC分类号： H01L29/788

CPC分类号： H01L27/0207 ,  H01L21/31144 ,  H01L21/76816 ,  H01L27/11521 ,  H01L27/11524

摘要： According to one embodiment, a semiconductor device includes a substrate, conductive members, an interlayer insulating film, and a plurality of contacts. The conductive members are provided in an upper portion of the substrate or above the substrate to extend in one direction. The interlayer insulating film is provided on the substrate and the conductive members. The plurality of contacts is provided in the interlayer insulating film. In a first region on the substrate, the contacts are located at some of lattice points of an imaginary first lattice. In a second region on the substrate, the contacts are located at some of lattice points of an imaginary second lattice. The second lattice is different from the first lattice. Each of the first lattice and the second lattice includes some of the lattice points located on the conductive members or on an extension region extended in the one direction of the conductive members. A position of each of the lattice points located on the conductive members and the extension region in the one direction is periodically displaced based on every n consecutively-arranged conductive members (n is a natural number).

摘要翻译： 根据一个实施例，半导体器件包括衬底，导电构件，层间绝缘膜和多个触点。 导电构件设置在基板的上部或基板上方，以在一个方向上延伸。 层间绝缘膜设置在基板和导电构件上。 多个触点设置在层间绝缘膜中。 在基板上的第一区域中，触点位于虚构的第一格子的某个格点。 在衬底上的第二区域中，触点位于虚构的第二晶格的一些晶格点处。 第二格子与第一格子不同。 第一晶格和第二晶格中的每一个包括位于导电构件上或在导电构件的一个方向上延伸的延伸区域上的一些晶格点。 基于每n个连续排列的导电构件（n是自然数），位于导电构件上的每个晶格点和沿一个方向的延伸区域的位置周期性地移位。

公开(公告)号：US08336000B2

公开(公告)日：2012-12-18

申请号：US13230187

申请日：2011-09-12

申请人： Yasunobu Kai ,  Katsuyoshi Kodera

发明人： Yasunobu Kai ,  Katsuyoshi Kodera

IPC分类号： G01B11/00 ,  G01B11/30 ,  G01B11/24 ,  G01B11/14 ,  G06F17/50 ,  H01L21/469

CPC分类号： G03F1/36

摘要： According to one embodiment, a method is disclosed for determining position of an auxiliary pattern on a photomask. The method can include generating a first set for each of three or more imaging positions of an exposure optical system. The method can include generating a second set for each of the three or more imaging positions by inverse Fourier transforming each of the first set. The method can include calculating a second order differential with respect to the imaging position of an index indicating amplitude of light belonging to the second set. In addition, the method can include extracting a position where the second order differential assumes an extremal value on an imaging plane of the exposure optical system. At least part of positions on the photomask each corresponding to the position assuming the extremal value on the imaging plane is used as a formation position of the auxiliary pattern.

摘要翻译： 根据一个实施例，公开了一种用于确定光掩模上的辅助图案的位置的方法。 该方法可以包括为曝光光学系统的三个或更多个成像位置中的每一个生成第一组。 该方法可以包括通过对第一组中的每一个进行逆傅立叶变换来为三个或更多个成像位置中的每一个生成第二组。 该方法可以包括计算相对于指示属于第二组的光的振幅的指标的成像位置的二阶微分。 此外，该方法可以包括在曝光光学系统的成像平面上提取二阶微分呈现极值的位置。 光学掩模上的每个对应于在成像平面上假设极值的位置的位置的至少一部分被用作辅助图案的形成位置。