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1.发明申请INSPECTION METHOD FOR PROTECTING IMAGE SENSOR DEVICES WITH FRONT SURFACE PROTECTION 失效用于保护具有前表面保护的图像传感器装置的检查方法公开(公告)号：US20080113458A1
公开(公告)日：2008-05-15
申请号：US11559990
申请日：2006-11-15
CPC分类号： H01L22/20
摘要： A method for inspecting a semiconductor wafer fabricated for image sensing operation that has had a transparent protective tape layer applied to a front or active wafer surface. The method includes quantifying chip defects in the image sensor wafer that lie under the protective layer using automatic disposition equipment.
摘要翻译： 一种用于检查制造用于图像感测操作的半导体晶片的方法，其具有施加到前面或活动晶片表面的透明保护带层。 该方法包括使用自动配置设备量化位于保护层下方的图像传感器晶片中的芯片缺陷。
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2.发明授权Inspection method for protecting image sensor devices with front surface protection 失效用于保护具有前表面保护的图像传感器装置的检查方法公开(公告)号：US07844099B2
公开(公告)日：2010-11-30
申请号：US11559990
申请日：2006-11-15
IPC分类号： G06K9/00
CPC分类号： H01L22/20
摘要： A method for inspecting a semiconductor wafer fabricated for image sensing operation that has had a transparent protective tape layer applied to a front or active wafer surface. The method includes quantifying chip defects in the image sensor wafer that lie under the protective layer using automatic disposition equipment.
摘要翻译： 一种用于检查制造用于图像感测操作的半导体晶片的方法，其具有施加到前面或活动晶片表面的透明保护带层。 该方法包括使用自动配置设备量化位于保护层下方的图像传感器晶片中的芯片缺陷。
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公开(公告)号：US07932614B2
公开(公告)日：2011-04-26
申请号：US12909494
申请日：2010-10-21
IPC分类号： H01L23/48
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
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公开(公告)号：US20110031620A1
公开(公告)日：2011-02-10
申请号：US12909494
申请日：2010-10-21
IPC分类号： H01L23/488 , H01L23/498
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
摘要翻译： 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。
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公开(公告)号：US07867876B2
公开(公告)日：2011-01-11
申请号：US12342393
申请日：2008-12-23
IPC分类号： H01L21/30
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
摘要翻译： 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。
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公开(公告)号：US20100155936A1
公开(公告)日：2010-06-24
申请号：US12342393
申请日：2008-12-23
IPC分类号： H01L21/30 , H01L23/488
CPC分类号： H01L21/6835 , H01L21/6836 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2224/27436 , H01L2224/83191 , H01L2924/00014 , H01L2924/01057 , H01L2924/09701 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A C4 grind tape and a laser-ablative adhesive layer are formed on a front side of a semiconductor substrate. A carrier substrate is thereafter attached to the laser-ablative adhesive layer. The back side of the semiconductor substrate is thinned by polishing or grinding, during which the carrier substrate provides mechanical support to enable thinning of the semiconductor substrate to a thickness of about 25 μm. A film frame tape is attached to the back side of the thinned semiconductor substrate and the laser-ablative adhesive layer is ablated by laser, thereby dissociating the carrier substrate from the back side of the C4 grind tape. The assembly of the film frame tape, the thinned semiconductor substrate, and the C4 grind tape is diced. The C4 grind tape is irradiated by ultraviolet light to become less adhesive, and is subsequently removed.
摘要翻译： 在半导体基板的正面上形成C4研磨胶带和激光烧蚀粘合剂层。 然后将载体基板连接到激光烧蚀粘合剂层。 通过抛光或研磨使半导体衬底的背面变薄，在此期间，载体衬底提供机械支撑以使半导体衬底的薄化能够达到约25μm的厚度。 胶片框架胶带附着到减薄的半导体衬底的背面，激光烧蚀粘合剂层通过激光烧蚀，从而使载体衬底与C4研磨胶带的背面分离。 薄膜框架胶带，变薄的半导体衬底和C4研磨胶带的组装被切割。 通过紫外线照射C4研磨胶带以变得粘合性变差，随后被除去。
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公开(公告)号：US08806740B2
公开(公告)日：2014-08-19
申请号：US13095969
申请日：2011-04-28
申请人： S. Jay Chey , Timothy C. Krywanczyk , Mohammed S. Shaikh , Matthew T. Tiersch , Cornelia Kang-I Tsang
发明人： S. Jay Chey , Timothy C. Krywanczyk , Mohammed S. Shaikh , Matthew T. Tiersch , Cornelia Kang-I Tsang
CPC分类号： G01R3/00 , G01R1/07378
摘要： A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.
摘要翻译： 提供了一种用于晶片的晶片级测试探针中的硅芯座，包括主体，第一和第二相对面以及通过主体形成的通孔阵列，以在第一和第二面之间延伸通过 分别与第一和第二表面上的每个通孔相关联的引线对可彼此电连接。
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公开(公告)号：US08034718B2
公开(公告)日：2011-10-11
申请号：US12031726
申请日：2008-02-15
IPC分类号： H01L21/302
CPC分类号： H01L21/02032
摘要： Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterned circuit structures. The blasting process is followed by one or more grinding, polishing and/or cleaning processes to remove any remaining circuit structures, to remove any lattice damage and/or to achieve a desired smoothness across the surface of the semiconductor wafer.
摘要翻译： 公开了从半导体晶片的表面去除图案化电路结构的方法的实施例。 方法实施例包括用颗粒喷射半导体晶片的表面，以便基本上除去所有图案化的电路结构。 喷砂过程之后是一次或多次研磨，抛光和/或清洁工艺，以除去任何剩余的电路结构，去除任何晶格损伤和/或在半导体晶片的表面上实现期望的平滑度。
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公开(公告)号：US20110199108A1
公开(公告)日：2011-08-18
申请号：US13095969
申请日：2011-04-28
IPC分类号： G01R31/20
CPC分类号： G01R3/00 , G01R1/07378
摘要： A silicon chicklet pedestal for use in a wafer-level test probe of a wafer is provided and includes a main body, first and second opposing faces, and an array of vias formed through the main body to extend between the first and second faces, through which pairs of leads, respectively associated with each via at the first and second faces, are electrically connectable to one another.
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公开(公告)号：US07001827B2
公开(公告)日：2006-02-21
申请号：US10413698
申请日：2003-04-15
申请人： Allan D. Abrams , Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Rene A. Lamothe , Ivan J. Stone , Matthew R. Whalen
发明人： Allan D. Abrams , Donald W. Brouillette , Joseph D. Danaher , Timothy C. Krywanczyk , Rene A. Lamothe , Ivan J. Stone , Matthew R. Whalen
CPC分类号： H01L21/304 , H01L2221/6834
摘要： There is provided a method for making a wafer including the steps of providing a substrate having a first surface, an opposite second surface, and at least one side edge defining a thickness of the substrate, the at least one side edge having a first peripheral region and a second peripheral region adjacent to the first peripheral region. The method includes applying a fluid to the first surface and the first peripheral region of the at least one side edge and removing the opposite second surface and the second peripheral region of the at least one side edge to form a third surface. A semiconductor chip made from the method for making the wafer is also provided.
摘要翻译： 提供了一种用于制造晶片的方法，包括以下步骤：提供具有第一表面，相对的第二表面的基底和限定基底的厚度的至少一个侧边缘，所述至少一个侧边缘具有第一周边区域 以及与第一周边区域相邻的第二周边区域。 该方法包括将流体施加到至少一个侧边缘的第一表面和第一周边区域，并且移除至少一个侧边缘的相对的第二表面和第二周边区域以形成第三表面。 还提供了由制造晶片的方法制成的半导体芯片。
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