公开(公告)号：US09625815B2

公开(公告)日：2017-04-18

申请号：US14039140

申请日：2013-09-27

申请人： Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

发明人： Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

IPC分类号： H01L21/768 ,  H01L21/027 ,  G03F7/039 ,  H01L21/033 ,  H01L21/3105 ,  H01L21/32 ,  G03F7/00

CPC分类号： G03F7/0392 ,  B81C1/00428 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/26 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/32139 ,  H01L21/76816

摘要： Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

公开(公告)号：US20150093702A1

公开(公告)日：2015-04-02

申请号：US14039140

申请日：2013-09-27

申请人： Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

发明人： Paul A. Nyhus ,  Eungnak Han ,  Swaminathan Sivakumar ,  Ernisse S. Putna

IPC分类号： H01L21/768 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0392 ,  B81C1/00428 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/0045 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/2037 ,  G03F7/26 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/32 ,  H01L21/3205 ,  H01L21/32139 ,  H01L21/76816

摘要： Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

摘要翻译： 描述了用于后端（BEOL）互连的自对准通孔和插头图案。 在一个示例中，用于定向自组装的结构包括设置在衬底上方的衬底和嵌段共聚物结构。 嵌段共聚物结构具有聚苯乙烯（PS）组分和聚甲基丙烯酸甲酯（PMMA）组分。 PS组件或PMMA组件之一是光敏的。

公开(公告)号：US20120116007A1

公开(公告)日：2012-05-10

申请号：US13270044

申请日：2011-10-10

申请人： Padma Gopalan ,  Eungnak Han

发明人： Padma Gopalan ,  Eungnak Han

IPC分类号： C09D153/00 ,  C08F293/00

CPC分类号： C08F293/005 ,  B82Y40/00 ,  C08F2438/01 ,  G03F7/165 ,  G03F7/26

摘要： Provided are novel polymer brushes that may be used in underlying buffer or imaging layers for block copolymer lithography. The novel polymer brushes include X-A-b-B and X-A-b-C block copolymer brushes, with X an anchoring group, the A block a lithographically sensitive polymer, and the C block a random copolymer. According to various embodiments; polymer block brushes for neutral and preferential layers are provided; the neutral layers non-preferential to the overlying block copolymer and the preferential layers preferential to a block of the overlying block copolymer. Also provided are novel methods of patterning polymer block brush layers as well as polymer block brush buffer and imaging layers that are directly patternable by e-beam, deep UV, extreme UV, X-ray or other lithographic methods.

摘要翻译： 提供了可用于嵌段共聚物光刻的底层缓冲液或成像层的新型聚合物刷。 新型聚合物刷包括X-A-b-B和X-A-b-C嵌段共聚物刷，X为锚定基团，A嵌段为光刻胶，C嵌段为无规共聚物。 根据各种实施例; 提供用于中性和优先层的聚合物块刷; 不优于上覆嵌段共聚物的中性层和优于上覆嵌段共聚物嵌段的优先层。 还提供了图案化聚合物嵌段刷层的新方法以及可通过电子束，深UV，极紫外，X射线或其它光刻方法直接图案化的聚合物嵌段刷缓冲液和成像层。

公开(公告)号：US09388268B2

公开(公告)日：2016-07-12

申请号：US13270044

申请日：2011-10-10

申请人： Padma Gopalan ,  Eungnak Han

发明人： Padma Gopalan ,  Eungnak Han

IPC分类号： C08F293/00 ,  C09D153/00 ,  G03F7/16 ,  G03F7/26 ,  B82Y40/00

CPC分类号： C08F293/005 ,  B82Y40/00 ,  C08F2438/01 ,  G03F7/165 ,  G03F7/26

摘要： Provided are novel polymer brushes that may be used in underlying buffer or imaging layers for block copolymer lithography. The novel polymer brushes include X-A-b-B and X-A-b-C block copolymer brushes, with X an anchoring group, the A block a lithographically sensitive polymer, and the C block a random copolymer. According to various embodiments, polymer block brushes for neutral and preferential layers are provided; the neutral layers non-preferential to the overlying block copolymer and the preferential layers preferential to a block of the overlying block copolymer. Also provided are novel methods of patterning polymer block brush layers as well as polymer block brush buffer and imaging layers that are directly patternable by e-beam, deep UV, extreme UV, X-ray or other lithographic methods.

摘要翻译： 提供了可用于嵌段共聚物光刻的底层缓冲液或成像层的新型聚合物刷。 新型聚合物刷包括X-A-b-B和X-A-b-C嵌段共聚物刷，X为锚定基团，A嵌段为光刻胶，C嵌段为无规共聚物。 根据各种实施例，提供用于中性和优先层的聚合物块刷; 不优于上覆嵌段共聚物的中性层和优于上覆嵌段共聚物嵌段的优先层。 还提供了图案化聚合物嵌段刷层的新方法以及可通过电子束，深UV，极紫外，X射线或其它光刻方法直接图案化的聚合物嵌段刷缓冲液和成像层。

公开(公告)号：US20160172237A1

公开(公告)日：2016-06-16

申请号：US14778562

申请日：2013-06-27

申请人： Robert L. Bristol ,  Rami HOURANI ,  Eungnak HAN ,  James M. BLACKWELL

发明人： Robert L. Bristol ,  Rami HOURANI ,  Eungnak HAN ,  James M. BLACKWELL

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/528 ,  H01L21/02 ,  H01L21/311

CPC分类号： H01L21/76897 ,  B81C1/00031 ,  B81C2201/0149 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/31051 ,  H01L21/31127 ,  H01L21/76822 ,  H01L21/76834 ,  H01L23/528 ,  H01L23/5328 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.

公开(公告)号：US08362179B2

公开(公告)日：2013-01-29

申请号：US12273987

申请日：2008-11-19

申请人： Padma Gopalan ,  Eungnak Han

发明人： Padma Gopalan ,  Eungnak Han

IPC分类号： C08F220/14 ,  C08F212/08

CPC分类号： G03F7/09 ,  C08F293/005 ,  C08F2438/02 ,  C08J3/24 ,  C08J7/04 ,  C08J7/12 ,  C08L33/068 ,  C08L2312/00 ,  C09D125/14 ,  C09D133/068 ,  C09D153/00 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/165 ,  G03F7/26 ,  Y10T428/24174 ,  Y10T428/24802 ,  C08L33/062

摘要： The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

公开(公告)号：US20110014420A2

公开(公告)日：2011-01-20

申请号：US12273987

申请日：2008-11-19

申请人： Padma Gopalan ,  Eungnak Han

发明人： Padma Gopalan ,  Eungnak Han

IPC分类号： B32B3/10 ,  C08J7/04

CPC分类号： G03F7/09 ,  C08F293/005 ,  C08F2438/02 ,  C08J3/24 ,  C08J7/04 ,  C08J7/12 ,  C08L33/068 ,  C08L2312/00 ,  C09D125/14 ,  C09D133/068 ,  C09D153/00 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/165 ,  G03F7/26 ,  Y10T428/24174 ,  Y10T428/24802 ,  C08L33/062

摘要： The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

摘要翻译： 本发明提供了包括基材，设置在基材上的交联聚合物膜以及设置在交联聚合物膜上的图案化二嵌段共聚物膜的结构。 交联聚合物包含由第一单体，第二单体和可光交联和/或可热交联的第三单体（包括环氧官能或丙烯酰基官能单体）聚合的无规共聚物。 还公开了用于形成结构的方法。

公开(公告)号：US20100124629A1

公开(公告)日：2010-05-20

申请号：US12273987

申请日：2008-11-19

申请人： Padma Gopalan ,  Eungnak Han

发明人： Padma Gopalan ,  Eungnak Han

IPC分类号： B32B3/10 ,  C08J7/04

CPC分类号： G03F7/09 ,  C08F293/005 ,  C08F2438/02 ,  C08J3/24 ,  C08J7/04 ,  C08J7/12 ,  C08L33/068 ,  C08L2312/00 ,  C09D125/14 ,  C09D133/068 ,  C09D153/00 ,  G03F7/038 ,  G03F7/0388 ,  G03F7/165 ,  G03F7/26 ,  Y10T428/24174 ,  Y10T428/24802 ,  C08L33/062

摘要： The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

摘要翻译： 本发明提供了包括基材，设置在基材上的交联聚合物膜以及设置在交联聚合物膜上的图案化二嵌段共聚物膜的结构。 交联聚合物包含由第一单体，第二单体和可光交联和/或可热交联的第三单体（包括环氧官能或丙烯酰基官能单体）聚合的无规共聚物。 还公开了用于形成结构的方法。