摘要:
In a stacked chip system, an IO circuit connected to a TSV pad for IO and a switch circuit constitute an IO channel in each chip, the IO channels as many as the maximum scheduled number of stacks are coupled together and connected to constitute an IO group, and the chip has one or more such IO groups. Each TSV pad for IO is connected with a through via to an IO terminal at the same position in a chip of another layer. On an interposer, if the actual number of stacks is less than the maximum scheduled number of stacks, connection pads for IO in adjacent IO groups on the interposer are connected via a conductor.
摘要:
In order to restrain increase in frame area caused along with a larger number of channels to a minimum, there is provided an image display device that adopts a communication method in which a signal is transmitted/received with the use of electrostatic capacitance coupling. A first board includes: a tabular first power supply line, a tabular second power supply line, a semiconductor element, and a tabular first electrode group. A second board includes: a tabular second electrode group and a tabular common electrode. In a state where the first board and the second board are laid on each other, the first electrode group overlaps the second electrode group while one of the first power supply line and the second power supply line overlaps the common electrode.
摘要:
An image display device includes a display panel having plural pixels and a second board having a transmitting electrode, the display panel having a first substrate that is disposed so as to overlap the second board, each pixel having a pixel electrode and a counter electrode, and the counter electrode being formed in a planar shape and being commonly provided to the pixel electrodes of each pixel; the counter electrode being divided into a portion A corresponding to the transmitting electrode of the second board and a portion B other than it, and the portions A and B of the counter electrode being connected to a common voltage through resistors. The portion A of the counter electrode constitutes the receiving electrode, and the portion A of the counter electrode acting as the receiving electrode is connected to a receiving circuit in the display panel through a decoupling capacitor.
摘要:
In a through-via-hole path of semiconductor chips stacked in N stages, repeater circuits are provided in the respective semiconductor chips. For example, a signal transmitted from an output buffer circuit of the semiconductor chip is transmitted to an input buffer circuit of the semiconductor chip via the repeater circuits of the respective semiconductor chips. The respective repeater circuits can isolate impedances on input sides and output sides, and therefore, a deterioration of a waveform quality accompanied by a parasitic capacitance parasitic on the through-via-hole path of the respective semiconductor chips can be reduced and a high speed signal can be transmitted.
摘要:
In a through-via-hole path of semiconductor chips stacked in N stages, repeater circuits are provided in the respective semiconductor chips. For example, a signal transmitted from an output buffer circuit of the semiconductor chip is transmitted to an input buffer circuit of the semiconductor chip via the repeater circuits of the respective semiconductor chips. The respective repeater circuits can isolate impedances on input sides and output sides, and therefore, a deterioration of a waveform quality accompanied by a parasitic capacitance parasitic on the through-via-hole path of the respective semiconductor chips can be reduced and a high speed signal can be transmitted.
摘要:
In order to restrain increase in frame area caused along with a larger number of channels to a minimum, there is provided an image display device that adopts a communication method in which a signal is transmitted/received with the use of electrostatic capacitance coupling. A first board includes: a tabular first power supply line, a tabular second power supply line, a semiconductor element, and a tabular first electrode group. A second board includes: a tabular second electrode group and a tabular common electrode. In a state where the first board and the second board are laid on each other, the first electrode group overlaps the second electrode group while one of the first power supply line and the second power supply line overlaps the common electrode.
摘要:
Objects of the present invention are to provide an integration circuit which produces no integration leak so that the bit accuracy is improved in a sigma-delta modulation circuit or a delta modulator circuit, which is based on a single flux quantum circuit that uses a flux quantum as an information carrier, and to provide a method for reducing thermal noise and quantization noise. According to the present invention, an integration circuit is formed by Josephson junctions and an inductor to reduce the integration leak, and a plurality of modulator circuits are connected to one another so as to add up each output. As a result, it is possible to reduce the influence of thermal noise exerted upon the bit accuracy, the thermal noise having no correlativity to one another. Moreover, by changing the density or phase of a SFQ pulse to be supplied to the Josephson junctions of the integration circuit, the correlativity of quantization noise between the outputs of the modulator circuits is eliminated so that the bit accuracy is improved.
摘要:
Objects of the present invention are to provide an integration circuit which produces no integration leak so that the bit accuracy is improved in a sigma-delta modulation circuit or a delta modulator circuit, which is based on a single flux quantum circuit that uses a flux quantum as an information carrier, and to provide a method for reducing thermal noise and quantization noise. According to the present invention, an integration circuit is formed by Josephson junctions and an inductor to reduce the integration leak, and a plurality of modulator circuits are connected to one another so as to add up each output. As a result, it is possible to reduce the influence of thermal noise exerted upon the bit accuracy, the thermal noise having no correlativity to one another. Moreover, by changing the density or phase of a SFQ pulse to be supplied to the Josephson junctions of the integration circuit, the correlativity of quantization noise between the outputs of the modulator circuits is eliminated so that the bit accuracy is improved.
摘要:
A semiconductor integrated circuit device capable of achieving improvement of I/O processing performance, reduction of power consumption, and reduction of cost is provided. Provided is a semiconductor integrated circuit device including, for example, a plurality of semiconductor chips stacked and mounted, the chips having data transceiving terminals bus-connected via through-vias, and data transmission and reception are performed via the bus with using the lowest source voltage among source voltages of internal core circuits of the chips. In accordance with that, a source voltage terminal of an n-th chip to be at the lowest source voltage is connected with source voltage terminals for data transceiving circuits of the other semiconductor chips via through-vias.
摘要:
An image display device includes a display panel having plural pixels and a second board having a transmitting electrode, the display panel having a first substrate that is disposed so as to overlap the second board, each pixel having a pixel electrode and a counter electrode, and the counter electrode being formed in a planar shape and being commonly provided to the pixel electrodes of each pixel; the counter electrode being divided into a portion A corresponding to the transmitting electrode of the second board and a portion B other than it, and the portions A and B of the counter electrode being connected to a common voltage through resistors. The portion A of the counter electrode constitutes the receiving electrode, and the portion A of the counter electrode acting as the receiving electrode is connected to a receiving circuit in the display panel through a decoupling capacitor.