公开(公告)号：US20060124055A1

公开(公告)日：2006-06-15

申请号：US11286170

申请日：2005-11-23

申请人： Walter Franken ,  Gerhard Strauch

发明人： Walter Franken ,  Gerhard Strauch

IPC分类号： B05C11/11 ,  B05C13/00

CPC分类号： H01L21/682 ,  C23C14/042 ,  G03F1/20

摘要： The invention relates to a device for removably fixing a mask in the form of a rectangular frame, on the legs of which clamping means are provided for gripping the end of the mask. According to the invention, the clamping means comprise a plurality of individual spring elements which grip closely adjacent points on the mask edge. The individual spring elements which are assigned to one leg of the frame and are embodied as leaf springs that are interconnected in a comb-type manner can be moved from a fitting position in which the frame can be fitted with the mask into a clamping position by means of a common auxiliary clamping member.

摘要翻译： 本发明涉及一种用于可拆卸地将矩形框架形式的面罩固定的装置，其腿部设有用于夹持面罩端部的夹持装置。 根据本发明，夹持装置包括多个单独的弹性元件，其紧密地夹紧在掩模边缘上的相邻点。 被分配到框架的一个腿并且被实施为以梳子形式互连的板簧的各个弹簧元件可以从框架可以与面罩配合的装配位置移动到通过 普通辅助夹紧件的装置。

公开(公告)号：US20050106864A1

公开(公告)日：2005-05-19

申请号：US10922701

申请日：2004-08-20

申请人： Holger Jurgensen ,  Gerhard Strauch

发明人： Holger Jurgensen ,  Gerhard Strauch

IPC分类号： C23C16/00 ,  C23C16/46 ,  C30B25/14 ,  H01L21/285 ,  H01L21/44

CPC分类号： H01L21/28525 ,  C23C16/46 ,  C30B25/14

摘要： The invention relates to a device for carrying out a method wherein the process gases are introduced via a common gas inlet element (D) into the process chamber in which a substrate holder (S) is arranged. The gas inlet element has a gas outlet surface which is tempered and which possesses a plurality of gas outlets like a sieve. The substrate holder extends parallel to the gas outlet surface on a horizontal plane and is rotationally driven about a vertical axis. The distance between the substrate holder and the gas outlet surface is not greater than 75 mm. A gas supply device for the reactive gases consisting of at least one metal-organic compound and at least one hydride in addition to another gas is also provided. The isotherms extending above the substrate holder become increasingly flatter as the distance from the gas inlet element becomes smaller, thereby resulting in a higher degree of isothermic homogeneity.

摘要翻译： 本发明涉及一种用于执行方法的装置，其中处理气体经由公共气体入口元件（D）引入到其中布置有衬底保持器（S）的处理室中。 气体入口元件具有回火的气体出口表面，并且具有多个诸如筛子的气体出口。 衬底保持器在水平面上平行于气体出口表面延伸并且围绕垂直轴旋转地驱动。 衬底保持器和气体出口表面之间的距离不大于75mm。 还提供了用于由至少一种金属 - 有机化合物和至少一种氢化物组成的反应性气体的气体供应装置以及另一种气体。 随着与气体入口元件的距离变小，在衬底支架上方延伸的等温线变得越来越平坦，从而导致更高程度的等温均匀性。

公开(公告)号：US06798060B2

公开(公告)日：2004-09-28

申请号：US10405442

申请日：2003-04-01

申请人： Gerhard Strauch

发明人： Gerhard Strauch

IPC分类号： H01L2306

CPC分类号： H01L23/3735 ,  H01L23/49506 ,  H01L23/49562 ,  H01L23/49822 ,  H01L23/49844 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Embodiments of the present invention are directed to packaged power semiconductor devices and direct-bonded metal substrates thereof. In one embodiment, a method for manufacturing a power semiconductor device comprises inserting a substrate assembly into a furnace having a plurality of process zones. The substrate assembly includes a first aluminum layer and a second aluminum layer that are electrically isolated from each other by a dielectric layer. The method further comprises providing the substrate assembly successively into each of the plurality of process zones to bond the first and second aluminum layers to the dielectric layer and obtain a direct bonded aluminum (DAB) substrate, attaching a semiconductor die to the first aluminum layer of the DAB substrate, and forming an enclosure around the semiconductor die and the DAB substrate while exposing a substantial portion of the second aluminum layer for enhanced heat dissipation.

公开(公告)号：US20060201427A1

公开(公告)日：2006-09-14

申请号：US11430725

申请日：2006-05-09

申请人： Holger Jurgensen ,  Johannes Kappeler ,  Gerhard Strauch

发明人： Holger Jurgensen ,  Johannes Kappeler ,  Gerhard Strauch

IPC分类号： C23C16/00

CPC分类号： C30B25/12 ,  C23C16/4584

摘要： The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

公开(公告)号：US20050081788A1

公开(公告)日：2005-04-21

申请号：US10941155

申请日：2004-09-15

申请人： Holger Jurgensen ,  Gerhard Strauch

发明人： Holger Jurgensen ,  Gerhard Strauch

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45568 ,  C23C16/455 ,  C23C16/45572

摘要： The invention relates to a device for depositing thin layers on a substrate, comprising a process chamber arranged in a reactor housing, the bottom of said process chamber being formed by a susceptor for receiving at least one substrate and a gas inlet organ being assigned to the lid of said process chamber, wherein the process gas can be introduced into the process chamber by means of a gas outlet surface which is substantially evenly distributed on the surface thereof and which points towards the susceptor. In order to prevent parasitic accumulation in the gas inlet organ, the gas outlet surface is formed by a gas-permeable diffuser plate, which can extend parallel to a gas outlet plate having a plurality of gas outlet holes arranged in the form of sieves.

摘要翻译： 本发明涉及一种用于在衬底上沉积薄层的装置，包括设置在反应器壳体中的处理室，所述处理室的底部由用于接收至少一个衬底的基座和被分配给 所述处理室的盖子，其中所述处理气体可以通过气体出口表面被引入到所述处理室中，所述气体出口表面基本均匀地分布在其表面上并指向所述基座。 为了防止气体入口器官中的寄生物积聚，气体出口表面由可透气的扩散板形成，该扩散板可以平行于具有以筛子形式布置的多个气体出口孔的气体出口板延伸。

公开(公告)号：US06670216B2

公开(公告)日：2003-12-30

申请号：US10283829

申请日：2002-10-29

申请人： Gerhard Strauch

发明人： Gerhard Strauch

IPC分类号： H01L2144

CPC分类号： H01L23/3735 ,  H01L23/49506 ,  H01L23/49562 ,  H01L23/49822 ,  H01L23/49844 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45124 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Embodiments of the present invention are directed to packaged power semiconductor devices and direct-bonded metal substrates thereof. In one embodiment, a method for manufacturing a power semiconductor device comprises inserting a substrate assembly into a furnace having a plurality of process zones. The substrate assembly includes a first aluminum layer and a second aluminum layer that are electrically isolated from each other by a dielectric layer. The method further comprises providing the substrate assembly successively into each of the plurality of process zones to bond the first and second aluminum layers to the dielectric layer and obtain a direct bonded aluminum (DAB) substrate, attaching a semiconductor die to the first aluminum layer of the DAB substrate, and forming an enclosure around the semiconductor die and the DAB substrate while exposing a substantial portion of the second aluminum layer for enhanced heat dissipation.

摘要翻译： 本发明的实施例涉及封装的功率半导体器件及其直接结合金属基片。 在一个实施例中，一种用于制造功率半导体器件的方法包括将衬底组件插入具有多个处理区的炉中。 基板组件包括通过电介质层彼此电绝缘的第一铝层和第二铝层。 该方法还包括将衬底组件连续地提供到多个工艺区域中的每一个中，以将第一和第二铝层结合到电介质层，并获得直接键合的铝（DAB）衬底，将半导体管芯附接到第一铝层 DAB衬底，并且在暴露出大部分第二铝层以增强散热的同时在半导体管芯和DAB衬底周围形成封装。

公开(公告)号：US20060121193A1

公开(公告)日：2006-06-08

申请号：US11262874

申请日：2005-10-31

申请人： Gerhard Strauch ,  Johannes Kaeppeler ,  Markus Reinhold ,  Bernd Schulte

发明人： Gerhard Strauch ,  Johannes Kaeppeler ,  Markus Reinhold ,  Bernd Schulte

IPC分类号： C23C16/00

CPC分类号： C23C16/45514 ,  C23C16/303 ,  C23C16/452 ,  C23C16/45574 ,  Y10S438/905

摘要： The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate (5), which is situated inside a process chamber (2) of a reactor (1) while being supported by a substrate holder (4). The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor (1) in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction (11) toward the substrate holder (4) through a multitude of openings (6), which are distributed over a surface (18) of a gas inlet element (3), said surface being located opposite the substrate holder (4). According to the invention, the second process gas is preconditioned with a plasma before entering the process chamber (1), and it enters the process chamber (2) at the edge (19) of the substrate holder (4) directly thereabove and flows parallel to the substrate holder surface.

摘要翻译： 本发明涉及一种用于将至少一层（特别是半导体层）沉积在至少一个基板（5）上的方法和装置，所述至少一个基板（5）位于反应器（1）的处理室（2）的内部，同时由 衬底保持器（4）。 该层由以固定的化学计量比提供的至少两种材料组分组成，其以第一和第二反应气体的形式引入反应器（1）中，并且一部分分解产物形成该层， 由此，具有低热活化能的第一反应气体的供应决定了层的生长速率，并且具有高热活化能的第二反应气体被过量供应并且被预处理，特别是， 通过独立的能源供应。 第一反应气体通过分布在气体入口元件（3）的表面（18）上的多个开口（6）沿方向（11）流动到衬底保持器（4），所述表面位于相对的 衬底保持器（4）。 根据本发明，第二工艺气体在进入处理室（1）之前用等离子体预处理，并且在第二工艺气体直接在其上方的基板保持器（4）的边缘（19）处进入处理室（2） 到基板保持器表面。

公开(公告)号：US20050106319A1

公开(公告)日：2005-05-19

申请号：US10967776

申请日：2004-10-18

申请人： Holger Jurgensen ,  Gerhard Strauch

发明人： Holger Jurgensen ,  Gerhard Strauch

IPC分类号： C23C14/00 ,  C23C16/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45589 ,  C23C16/4585 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： The invention relates to a method and a device for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of said process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of said chamber consisting of a gas inlet element. Said cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through said gas exit surface. The invention is characterized in that the height of the process chamber which is defined by the distance between the substrate bearing surface and the gas exit surface is varied before the beginning of the deposition process and/or during the deposition process.

摘要翻译： 本发明涉及一种用于在布置在反应器壳体中的处理室中的衬底上沉积薄层的方法和装置，所述处理室的底部由可围绕其竖直轴线可旋转地驱动的可调节基板保持架组成， 所述室的盖由气体入口元件组成。 所述盖平行于底部延伸并与其排列成筛子式的气体出口一起形成气体出口表面，其在衬底保持器的整个衬底承载表面上延伸，处理气体通过 所述气体出口表面。 本发明的特征在于，在沉积过程开始和/或沉积过程之前，由衬底承载表面和气体出口表面之间的距离限定的处理室的高度是变化的。

公开(公告)号：US20080072821A1

公开(公告)日：2008-03-27

申请号：US11780698

申请日：2007-07-20

申请人： Jeremic Dalton ,  Martin Dauelsberg ,  Kenneth Doering ,  M. Karim ,  Thomas Seidel ,  Gerhard Strauch

发明人： Jeremic Dalton ,  Martin Dauelsberg ,  Kenneth Doering ,  M. Karim ,  Thomas Seidel ,  Gerhard Strauch

IPC分类号： C23C16/00

CPC分类号： C30B35/00 ,  C30B25/14

摘要： A reaction chamber apparatus includes a vertically movable heater-susceptor with an attached annular attached flow ring that performs as a gas conduit. The outlet port of the flow ring extends below the bottom of a wafer transport slot valve when the susceptor is in its process (higher) position, while the gas conduit formed by the flow ring has an external surface at its edge that isolates the outer space of the reactor above the wafer from the confined reaction space. In some cases, the outer edge of the gas conduit is in proximity to a ring attached to the reactor lid and, together, the ring and conduit act as a tongue-in-groove (TIG) configuration. In some cases, the TIG design may have a staircase contour, thereby limiting diffusion-backflow of downstream gases to the outer space of the reactor.

摘要翻译： 反应室装置包括可垂直移动的加热器基座，其具有作为气体导管执行的附接的环形附接流动环。 当基座处于（更高）位置时，流动环的出口延伸到晶片运输槽阀的底部的下方，而由流动环形成的气体导管在其边缘处具有隔离外部空间的外表面 的反应器从受限制的反应空间移动到晶片上方。 在一些情况下，气体导管的外边缘靠近附接到反应器盖的环，并且环和导管一起作为榫槽（TIG）构造。 在某些情况下，TIG设计可能具有阶梯轮廓，从而限制下游气体向反应器外部空间的扩散回流。