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    Process and device for depositing thin layers on a substrate in a process chamber of adjustable height
    1.
    发明申请
    Process and device for depositing thin layers on a substrate in a process chamber of adjustable height 有权
    用于在可调节高度的处理室中的衬底上沉积薄层的工艺和装置

    公开(公告)号：US20050106319A1

    公开(公告)日：2005-05-19

    申请号：US10967776

    申请日：2004-10-18

    申请人： Holger Jurgensen ,  Gerhard Strauch

    发明人： Holger Jurgensen ,  Gerhard Strauch

    IPC分类号： C23C14/00 ,  C23C16/00 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  H01L21/687

    CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45589 ,  C23C16/4585 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

    摘要： The invention relates to a method and a device for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of said process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of said chamber consisting of a gas inlet element. Said cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through said gas exit surface. The invention is characterized in that the height of the process chamber which is defined by the distance between the substrate bearing surface and the gas exit surface is varied before the beginning of the deposition process and/or during the deposition process.

    摘要翻译： 本发明涉及一种用于在布置在反应器壳体中的处理室中的衬底上沉积薄层的方法和装置，所述处理室的底部由可围绕其竖直轴线可旋转地驱动的可调节基板保持架组成， 所述室的盖由气体入口元件组成。 所述盖平行于底部延伸并与其排列成筛子式的气体出口一起形成气体出口表面，其在衬底保持器的整个衬底承载表面上延伸，处理气体通过 所述气体出口表面。 本发明的特征在于，在沉积过程开始和/或沉积过程之前，由衬底承载表面和气体出口表面之间的距离限定的处理室的高度是变化的。

    CVD coating device
    2.
    发明申请
    CVD coating device 审中-公开

    公开(公告)号：US20060201427A1

    公开(公告)日：2006-09-14

    申请号：US11430725

    申请日：2006-05-09

    申请人： Holger Jurgensen ,  Johannes Kappeler ,  Gerhard Strauch

    发明人： Holger Jurgensen ,  Johannes Kappeler ,  Gerhard Strauch

    IPC分类号： C23C16/00

    CPC分类号： C30B25/12 ,  C23C16/4584

    摘要： The invention relates to a device for depositing especially, crystalline layers onto one or more, especially, also crystalline substrates in a process chamber using reaction gases which are guided into said process chamber, where they undergo pyrolytic reaction. The device has a heatable support plate wherein at least one substrate holder lies loosely, especially rotationally, with its surface flush with the surroundings. A compensation plate which adjoins the at least one substrate holder, following the contours of the same, is provided on the support plate in order to keep the isothermal profile on the support plate as flat as possible.

    Device for depositing thin layers on a substrate
    3.
    发明申请
    Device for depositing thin layers on a substrate 审中-公开
    用于在衬底上沉积薄层的装置

    公开(公告)号：US20050081788A1

    公开(公告)日：2005-04-21

    申请号：US10941155

    申请日：2004-09-15

    申请人： Holger Jurgensen ,  Gerhard Strauch

    发明人： Holger Jurgensen ,  Gerhard Strauch

    IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

    CPC分类号： C23C16/45568 ,  C23C16/455 ,  C23C16/45572

    摘要： The invention relates to a device for depositing thin layers on a substrate, comprising a process chamber arranged in a reactor housing, the bottom of said process chamber being formed by a susceptor for receiving at least one substrate and a gas inlet organ being assigned to the lid of said process chamber, wherein the process gas can be introduced into the process chamber by means of a gas outlet surface which is substantially evenly distributed on the surface thereof and which points towards the susceptor. In order to prevent parasitic accumulation in the gas inlet organ, the gas outlet surface is formed by a gas-permeable diffuser plate, which can extend parallel to a gas outlet plate having a plurality of gas outlet holes arranged in the form of sieves.

    摘要翻译： 本发明涉及一种用于在衬底上沉积薄层的装置，包括设置在反应器壳体中的处理室，所述处理室的底部由用于接收至少一个衬底的基座和被分配给 所述处理室的盖子，其中所述处理气体可以通过气体出口表面被引入到所述处理室中，所述气体出口表面基本均匀地分布在其表面上并指向所述基座。 为了防止气体入口器官中的寄生物积聚，气体出口表面由可透气的扩散板形成，该扩散板可以平行于具有以筛子形式布置的多个气体出口孔的气体出口板延伸。

    Process and device for depositing semiconductor layers
    4.
    发明申请
    Process and device for depositing semiconductor layers 审中-公开
    用于沉积半导体层的工艺和器件

    公开(公告)号：US20050106864A1

    公开(公告)日：2005-05-19

    申请号：US10922701

    申请日：2004-08-20

    申请人： Holger Jurgensen ,  Gerhard Strauch

    发明人： Holger Jurgensen ,  Gerhard Strauch

    IPC分类号： C23C16/00 ,  C23C16/46 ,  C30B25/14 ,  H01L21/285 ,  H01L21/44

    CPC分类号： H01L21/28525 ,  C23C16/46 ,  C30B25/14

    摘要： The invention relates to a device for carrying out a method wherein the process gases are introduced via a common gas inlet element (D) into the process chamber in which a substrate holder (S) is arranged. The gas inlet element has a gas outlet surface which is tempered and which possesses a plurality of gas outlets like a sieve. The substrate holder extends parallel to the gas outlet surface on a horizontal plane and is rotationally driven about a vertical axis. The distance between the substrate holder and the gas outlet surface is not greater than 75 mm. A gas supply device for the reactive gases consisting of at least one metal-organic compound and at least one hydride in addition to another gas is also provided. The isotherms extending above the substrate holder become increasingly flatter as the distance from the gas inlet element becomes smaller, thereby resulting in a higher degree of isothermic homogeneity.

    摘要翻译： 本发明涉及一种用于执行方法的装置，其中处理气体经由公共气体入口元件（D）引入到其中布置有衬底保持器（S）的处理室中。 气体入口元件具有回火的气体出口表面，并且具有多个诸如筛子的气体出口。 衬底保持器在水平面上平行于气体出口表面延伸并且围绕垂直轴旋转地驱动。 衬底保持器和气体出口表面之间的距离不大于75mm。 还提供了用于由至少一种金属 - 有机化合物和至少一种氢化物组成的反应性气体的气体供应装置以及另一种气体。 随着与气体入口元件的距离变小，在衬底支架上方延伸的等温线变得越来越平坦，从而导致更高程度的等温均匀性。

    Process for depositing thin layers on a substrate in a process chamber of adjustable height
    5.
    发明授权
    Process for depositing thin layers on a substrate in a process chamber of adjustable height 有权
    在可调节高度的处理室中的衬底上沉积薄层的工艺

    公开(公告)号：US07524532B2

    公开(公告)日：2009-04-28

    申请号：US10967776

    申请日：2004-10-18

    申请人： Holger Jurgensen ,  Gerhard Karl Strauch

    发明人： Holger Jurgensen ,  Gerhard Karl Strauch

    IPC分类号： C23C16/00

    CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45589 ,  C23C16/4585 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

    摘要： A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The process includes the step of varying the height of the process chamber, which is defined by the distance between the substrate bearing surface and the gas exit surface, before the beginning of the deposition process and/or during the deposition process.

    摘要翻译： 一种用于在布置在反应器壳体中的处理室中的衬底上沉积薄层的工艺，处理室的底部由可围绕其垂直轴线可旋转地驱动的可调节衬底保持器和由腔体的盖组成， 进气口元件 盖子平行于底部延伸并与其排列成筛子式的气体出口一起形成气体出口表面，该表面在衬底保持器的整个衬底承载表面上延伸，处理气体通过 气体出口表面。 该方法包括在沉积过程开始和/或沉积过程之前改变由衬底承载表面和气体出口表面之间的距离限定的处理室的高度的步骤。

    Process for depositing III-V semiconductor layers on a non-III-V substrate
    7.
    发明授权
    Process for depositing III-V semiconductor layers on a non-III-V substrate 有权
    用于在非III-V衬底上沉积III-V半导体层的工艺

    公开(公告)号：US07128786B2

    公开(公告)日：2006-10-31

    申请号：US10872914

    申请日：2004-06-21

    申请人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

    发明人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

    IPC分类号： C30B25/04

    CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02647

    摘要： This invention relates to a method for depositing III-V semiconductor layers on a non III-V substrate especially a sapphire, silicon or silicon oxide substrate, or another substrate containing silicon. According to said method, a III-V layer, especially a buffer layer, is deposited on the substrate or on a III-V germination layer, in a process chamber of a reactor containing gaseous starting materials. In order to reduce the defect density of the overgrowth, a masking layer consisting of essentially amorphous material is deposited directly on the III-V germination layer or directly on the substrate, said masking layer partially covering of approximately partially covering the germination layer. The masking layer can be a quasi-monolayer and can consist of various materials.

    摘要翻译： 本发明涉及一种用于在非III-V衬底，特别是蓝宝石，硅或氧化硅衬底或含有硅的另一衬底上沉积III-V半导体层的方法。 根据所述方法，在含有气态原料的反应器的处理室中，将III-V层，特别是缓冲层沉积在衬底上或III-V发芽层上。 为了降低过度生长的缺陷密度，由III-V发芽层或直接在基底上直接沉积由基本无定形材料组成的掩蔽层，所述掩蔽层部分地覆盖大部分覆盖发芽层。 掩模层可以是准单层，并且可以由各种材料组成。

    Method for the production of III-V laser components
    10.
    发明申请
    Method for the production of III-V laser components 审中-公开
    生产III-V激光元件的方法

    公开(公告)号：US20050025909A1

    公开(公告)日：2005-02-03

    申请号：US10872902

    申请日：2004-06-21

    申请人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

    发明人： Holger Jurgensen ,  Alois Krost ,  Armin Dadgar

    IPC分类号： H01L21/20 ,  H01S5/02 ,  H01S5/323 ,  A41G1/00

    CPC分类号： H01S5/32341 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01S5/021

    摘要： The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.

    摘要翻译： 本发明涉及一种用于生产III-V激光器部件的方法，其中III-V半导体层从气态起始材料沉积在反应器的处理室中的硅衬底上。 根据本发明，可以实现用于生产定性高等级激光器的经济方法，其中首先，在Si衬底上，特别是Si（III）衬底上沉积含Al缓冲层，其中III -V半导体层，特别是GaN沉积，使得其晶格面平行于衬底的解理方向延伸，由此，在切割衬底平面平行层时，形成解理面。