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    Method of fabricating semiconductor device
    1.
    发明授权
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07763415B2

    公开(公告)日：2010-07-27

    申请号：US11430414

    申请日：2006-05-09

    申请人： Jeong-Min Park ,  Jang-Soo Kim ,  Hi-Kuk Lee

    发明人： Jeong-Min Park ,  Jang-Soo Kim ,  Hi-Kuk Lee

    IPC分类号： G03F7/00 ,  H01L21/00

    CPC分类号： H01L27/1288 ,  G03F7/40 ,  H01L21/0273 ,  H01L27/1214 ,  H01L29/66765

    摘要： A method of fabricating a semiconductor device is provided. The method includes forming at least one etch target film on a substrate, forming a first reflowable etch mask on the at least one etch target film, patterning the etch target film using the first reflowable etch mask. The method further includes reflowing the first reflowable etch mask to form a second etch mask and patterning the etch target film using the second etch mask.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成至少一个蚀刻目标膜，在至少一个蚀刻靶膜上形成第一可回流蚀刻掩模，使用第一可回流蚀刻掩模对蚀刻目标膜进行构图。 该方法还包括回流第一可回流蚀刻掩模以形成第二蚀刻掩模，并使用第二蚀刻掩模对蚀刻目标膜进行图案化。

    Method of fabricating semiconductor device
    2.
    发明申请
    Method of fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US20070031763A1

    公开(公告)日：2007-02-08

    申请号：US11430414

    申请日：2006-05-09

    申请人： Jeong-Min Park ,  Jang-Soo Kim ,  Hi-Kuk Lee

    发明人： Jeong-Min Park ,  Jang-Soo Kim ,  Hi-Kuk Lee

    IPC分类号： G03F7/26

    CPC分类号： H01L27/1288 ,  G03F7/40 ,  H01L21/0273 ,  H01L27/1214 ,  H01L29/66765

    摘要： A method of fabricating a semiconductor device is provided. The method includes forming at least one etch target film on a substrate, forming a first reflowable etch mask on the at least one etch target film, patterning the etch target film using the first reflowable etch mask. The method further includes reflowing the first reflowable etch mask to form a second etch mask and patterning the etch target film using the second etch mask.

    摘要翻译： 提供一种制造半导体器件的方法。 该方法包括在衬底上形成至少一个蚀刻目标膜，在至少一个蚀刻靶膜上形成第一可回流蚀刻掩模，使用第一可回流蚀刻掩模对蚀刻目标膜进行构图。 该方法还包括回流第一可回流蚀刻掩模以形成第二蚀刻掩模，并使用第二蚀刻掩模对蚀刻目标膜进行图案化。

    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
    3.
    发明授权
    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same 有权
    光刻胶组合物及使用其制造薄膜晶体管基板的方法

    公开(公告)号：US07955784B2

    公开(公告)日：2011-06-07

    申请号：US11554194

    申请日：2006-10-30

    申请人： Hi-Kuk Lee ,  Woo-Seok Jeon ,  Doo-Hee Jung ,  Jeong-Min Park ,  Deok-Man Kang ,  Si-Young Jung ,  Jae-Young Choi

    发明人： Hi-Kuk Lee ,  Woo-Seok Jeon ,  Doo-Hee Jung ,  Jeong-Min Park ,  Deok-Man Kang ,  Si-Young Jung ,  Jae-Young Choi

    IPC分类号： G03F7/30

    CPC分类号： H01L27/1288 ,  G03F7/0233 ,  G03F7/0236 ,  H01L27/1214

    摘要： A photoresist composition includes about 100 parts by weight of resin mixture including novolak resin and acryl resin and about 10 parts to about 50 parts by weight of naphthoquinone diazosulfonic acid ester. A weight-average molecular weight of the novolak resin is no less than about 30,000. A weight-average molecular weight of the acryl resin is no less than about 20,000. The acryl resin makes up about 1% to about 15% of the total weight of the resin mixture. When a photoresist film formed using the photoresist composition is heated, a profile variation of the photoresist composition is relatively small. Therefore, a residual photoresist film has a uniform thickness, and a short circuit and/or an open defect in a TFT substrate may be reduced.

    摘要翻译： 光致抗蚀剂组合物包括约100重量份的包括酚醛清漆树脂和丙烯酸树脂的树脂混合物和约10重量份至约50重量份的萘醌重氮磺酸酯。 酚醛清漆树脂的重均分子量不小于约30,000。 丙烯酸树脂的重均分子量不小于约20,000。 丙烯酸树脂占树脂混合物总重量的约1％至约15％。 当使用光致抗蚀剂组合物形成的光致抗蚀剂膜被加热时，光致抗蚀剂组合物的轮廓变化相对较小。 因此，残留的光致抗蚀剂膜具有均匀的厚度，并且可能减小TFT基板中的短路和/或开路缺陷。

    Manufacturing thin film transistor array panels for flat panel displays
    8.
    发明授权
    Manufacturing thin film transistor array panels for flat panel displays 有权
    制造用于平板显示器的薄膜晶体管阵列面板

    公开(公告)号：US08203674B2

    公开(公告)日：2012-06-19

    申请号：US13179436

    申请日：2011-07-08

    申请人： Seung-Ha Choi ,  Min-Seok Oh ,  Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Sang-Gab Kim

    发明人： Seung-Ha Choi ,  Min-Seok Oh ,  Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Sang-Gab Kim

    IPC分类号： G02F1/1333 ,  G02F1/136 ,  G02F1/1343

    CPC分类号： H01L27/1288 ,  G02F1/133512 ,  G02F1/136209 ,  H01L27/1214 ,  H01L27/124 ,  H01L29/78633

    摘要： A thin film transistor array panel for a flat panel display includes a substrate, a first signal line formed on the substrate, a second signal line intersecting and insulated from the first signal line, a switching element having a first terminal connected to the first signal line, a second terminal connected to the second signal line, and a third terminal, a pixel electrode connected to the third terminal of the switching element, and first and second light blocking members extending parallel to the second signal line, each being disposed on an opposite side of and partially overlapping an respective edge of the second signal line, an interval between the first and second light blocking members being in a range of from more than 1.5 μm to less than 4 μm. The array panel prevents light leakage from the display and improves its transmittance, aperture ratio and color reproducibility.

    摘要翻译： 一种用于平板显示器的薄膜晶体管阵列面板包括：衬底，形成在衬底上的第一信号线，与第一信号线相交和绝缘的第二信号线;开关元件，具有连接到第一信号线 ，连接到第二信号线的第二端子，以及第三端子，连接到开关元件的第三端子的像素电极，以及平行于第二信号线延伸的第一和第二遮光部件， 并且部分地与第二信号线的相应边缘重叠，第一和第二遮光构件之间的间隔在大于1.5μm至小于4μm的范围内。 阵列面板可防止显示屏漏光，提高透光率，开口率和色彩再现性。

    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
    9.
    发明授权
    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same 有权
    光刻胶组合物及使用其制造薄膜晶体管基板的方法

    公开(公告)号：US07638253B2

    公开(公告)日：2009-12-29

    申请号：US12082436

    申请日：2008-04-11

    申请人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    发明人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    IPC分类号： G03F7/004 ,  G03F7/023 ,  G03F7/30

    CPC分类号： G03F7/0382 ,  H01L21/312 ,  H01L27/1214 ,  H01L27/1288

    摘要： In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

    摘要翻译： 在一个实例中，光致抗蚀剂组合物包括约1至约70重量份的第一粘合剂树脂，其包含由以下化学式1表示的重复单元，约1至约70重量份的第二粘合剂树脂，其包含重复单元 由以下化学式2表示，约0.5至约10重量份的光酸产生剂，约1至约20重量份的交联剂和约10至约200重量份的溶剂。 光致抗蚀剂组合物可以提高光致抗蚀剂图案的耐热性和粘附能力。 其中R1和R2独立地表示具有1至5个碳原子的烷基，n和m独立地表示自然数。

    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same
    10.
    发明申请
    Photoresist composition and method of manufacturing a thin-film transistor substrate using the same 有权
    光刻胶组合物及使用其制造薄膜晶体管基板的方法

    公开(公告)号：US20080254634A1

    公开(公告)日：2008-10-16

    申请号：US12082436

    申请日：2008-04-11

    申请人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    发明人： Jeong-Min Park ,  Doo-Hee Jung ,  Hi-Kuk Lee ,  Hyoc-Min Youn ,  Ki-Hyuk Koo

    IPC分类号： H01L21/311 ,  G03F7/004

    CPC分类号： G03F7/0382 ,  H01L21/312 ,  H01L27/1214 ,  H01L27/1288

    摘要： In one example, a photoresist composition includes about 1 to about 70 parts by weight of a first binder resin including a repeat unit represented by the following Chemical Formula 1, about 1 to about 70 parts by weight of a second binder resin including a repeat unit represented by the following Chemical Formula 2, about 0.5 to about 10 parts by weight of a photo-acid generator, about 1 to about 20 parts by weight of a cross-linker and about 10 to about 200 parts by weight of a solvent. The photoresist composition may improve the heat resistance and adhesion ability of a photoresist pattern. wherein R1 and R2 independently represent an alkyl group having 1 to 5 carbon atoms, and n and m independently represent a natural number.

    摘要翻译： 在一个实例中，光致抗蚀剂组合物包括约1至约70重量份的第一粘合剂树脂，其包含由以下化学式1表示的重复单元，约1至约70重量份的第二粘合剂树脂，其包含重复单元 由以下化学式2表示，约0.5至约10重量份的光酸产生剂，约1至约20重量份的交联剂和约10至约200重量份的溶剂。 光致抗蚀剂组合物可以提高光致抗蚀剂图案的耐热性和粘附能力。 其中R 1和R 2独立地表示具有1至5个碳原子的烷基，n和m独立地表示自然数。