公开(公告)号：US09353458B2

公开(公告)日：2016-05-31

申请号：US12225570

申请日：2007-02-05

申请人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

发明人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

IPC分类号： C30B23/02 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01L21/02 ,  C23C16/27 ,  H01J37/32 ,  H01J37/34

CPC分类号： C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

摘要： The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (α-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

摘要翻译： 本发明提供一种用于外延金刚石膜的基底，其能够通过使用CVD法在铱基上外延生长具有1英寸（2.5cm）或更大直径的大面积的高品质金刚石， 用于外延金刚石膜的基底衬底，用外延金刚石膜制成的外延金刚石膜和用于制造外延金刚石膜的方法。 通过真空沉积法或溅射法在单晶氧化镁（MgO）衬底或单晶蓝宝石（α-Al 2 O 3）衬底上外延生长形成铱（Ir）膜，并且偏置核生成工艺 通过将含离子的直流等离子体暴露于形成为膜的铱（Ir）基底的表面，将形成外延金刚石核的形成的铱（Ir）基底的表面施加于膜。

公开(公告)号：US07514146B2

公开(公告)日：2009-04-07

申请号：US11368617

申请日：2006-03-07

申请人： Hitoshi Noguchi ,  Atsuhito Sawabe

发明人： Hitoshi Noguchi ,  Atsuhito Sawabe

IPC分类号： C30B29/04

CPC分类号： C30B29/16 ,  C30B25/105 ,  C30B29/04 ,  H01L21/0242 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  Y10T428/30 ,  Y10T428/31678

摘要： There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 θ=46.5° or 2θ=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of λ=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.

摘要翻译： 提供了至少包括单晶MgO基板，在MgO基板上异质外延生长的铱（Ir）膜的多层基板，在Ir膜上气相沉积的金刚石膜，其中Ir膜的结晶度为 归因于通过λ=1.54的X射线衍射法分析的Ir（200）的2θ= 46.5°或2θ= 47.3°的衍射强度峰的半峰全宽（FWHM）为0.40°以下 。 由此，提供了在MgO基板和Ir膜之间以及Ir膜和金刚石膜之间的界面处具有防分层性的多层基板，特别是具有大面积的单晶金刚石膜 作为连续片。

公开(公告)号：US07628856B2

公开(公告)日：2009-12-08

申请号：US11713036

申请日：2007-03-02

申请人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

发明人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

IPC分类号： C30B29/02

CPC分类号： C30B25/18 ,  C30B29/04 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658

摘要： There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.

摘要翻译： 公开了一种用于制造单晶金刚石生长用基板的方法，至少包括在单晶金刚石生长之前对基板进行预定处理以在其上形成金刚石核的偏压处理的步骤，其中直流放电是通过直流放电 在基板侧是阴极，并且其中在处理中，至少在偏置处理开始之后40秒至偏置处理结束之后，基板的温度保持在800℃的范围内 可以提供一种用于生产用于单晶金刚石生长的基底的方法，通过该方法可以更确定地生长单晶金刚石。

公开(公告)号：US20060203346A1

公开(公告)日：2006-09-14

申请号：US11368617

申请日：2006-03-07

申请人： Hitoshi Noguchi ,  Atsuhito Sawabe

发明人： Hitoshi Noguchi ,  Atsuhito Sawabe

IPC分类号： G02B1/10

CPC分类号： C30B29/16 ,  C30B25/105 ,  C30B29/04 ,  H01L21/0242 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02631 ,  Y10T428/30 ,  Y10T428/31678

摘要： There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 θ=46.5° or 2θ=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of λ=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.

公开(公告)号：US06369992B1

公开(公告)日：2002-04-09

申请号：US08909687

申请日：1997-08-12

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Yuichi Ohsawa ,  Masashi Sahashi ,  Tadahiko Kobayashi

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3977 ,  G11B2005/3996

摘要： A magneto-resistance effect head records and reproduces recorded magnetic material. The magneto-resistance effect head has a magneto-resistance effect film connected to a pair of leads. Additionally, a magnetic yoke, with a first and second magnetic yoke member, directs a signal magnetic field from a recording medium to the magneto-resistance effect film. The magneto-resistance effect head is constructed such that the first and second magnetic yoke members have surfaces that face the recording medium. The surfaces of the first and second magnetic yoke members have a magnetic gap between them. Additionally, the magneto-resistance effect film is recessed from the medium facing surfaces by a predetermined distance. Moreover, the first and second magnetic yoke members are aligned almost in parallel with the magnetic flux flow from the recording medium to the first magnetic yoke member, the magneto-resistance effect film, and the second magnetic yoke member.

摘要翻译： 磁阻效应头记录和再现记录的磁性材料。 磁阻效应头具有连接到一对引线的磁阻效应膜。 此外，具有第一和第二磁轭构件的磁轭将来自记录介质的信号磁场引导到磁阻效应膜。 磁阻效应头被构造成使得第一和第二磁轭构件具有面向记录介质的表面。 第一和第二磁轭构件的表面之间具有磁隙。 此外，磁阻效应膜从面向介质的表面凹陷预定距离。 此外，第一和第二磁轭构件几乎与从记录介质到第一磁轭构件，磁阻效应膜和第二磁轭构件的磁通流平行排列。

公开(公告)号：US6115216A

公开(公告)日：2000-09-05

申请号：US780328

申请日：1997-01-08

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/33 ,  G11B5/265

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  G11B5/3116 ,  G11B5/3163

摘要： A magnetoresistance effect type head comprises a magnetoresistance effect film having a pair of leads connected thereto and possessing a magnetic field responding part and a pair of upper and lower shield layers having a magnetoresistance effect film nipped therebetween through the medium of a magnetic gap-forming insulating film. This magnetoresistance effect type head satisfies the relations, W.sub.s

摘要翻译： 磁阻效应型头包括具有连接到其上的一对引线并具有磁场响应部分的磁阻效应膜，以及一对具有磁阻效应膜的上下屏蔽层，其间通过磁隙形成绝缘体 电影。 该磁阻效应型磁头满足Ws

公开(公告)号：US5583474A

公开(公告)日：1996-12-10

申请号：US248679

申请日：1994-05-25

申请人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

发明人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

IPC分类号： G05F1/40 ,  H01F5/00 ,  H01F17/00 ,  H01F27/30 ,  H01F41/00

CPC分类号： H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

摘要： Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

公开(公告)号：US5187561A

公开(公告)日：1993-02-16

申请号：US545870

申请日：1990-06-29

申请人： Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

发明人： Masahiko Hasunuma ,  Hisashi Kaneko ,  Atsuhito Sawabe ,  Takashi Kawanoue ,  Yoshiko Kohanawa ,  Shuichi Komatsu

IPC分类号： C30B25/14 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/532 ,  H01L27/04 ,  H01L29/41

CPC分类号： H01L21/28556 ,  H01L21/32051 ,  H01L23/532 ,  H01L23/53219 ,  H01L23/53223 ,  H01L23/53233 ,  H01L23/53242 ,  H01L23/53247 ,  H01L2924/0002

摘要： The close-packed plane of a single crystal forming an electrode line such as electrodes or lines of a semiconductor device whose active regions are reduced in size, i.e., highly integrated, is arranged parallel to the longitudinal direction of the line; or in the case of a polycrystalline electrode line, the angle formed between the normal line direction of the close-packed plane of its crystal grains and that of the electrode line is arranged to be 80.degree. or less.

公开(公告)号：US06362940B1

公开(公告)日：2002-03-26

申请号：US09520633

申请日：2000-03-07

申请人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

发明人： Hiroaki Yoda ,  Atsuhito Sawabe ,  Hitoshi Iwasaki ,  Naoyuki Inoue ,  Akio Hori

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996

摘要： A recording-reproducing magnetic head comprising a magnetoresistance effect reproducing head and an inductive recording head. The magnetoresistance effect reproducing head having a magnetoresistance effect element and the inductive recording head having a lower magnetic core, an upper magnetic core, coils sandwiched between the lower and upper magnetic cores at their mid-parts, and a recording magnetic cores at leading end parts. The leading end parts of the lower and upper magnetic cores having a protruding part protruding to the recording magnetic gap layer and the upper magnetic core having a continuous magnetic body which extends from the protruding part to the mid-part. A center line of the protruding part of the lower magnetic core, which extends in a track length direction on a surface opposite a medium, intersecting the protruding part of the upper magnetic core.

摘要翻译： 一种记录再现磁头，包括磁阻效应再现头和感应记录头。 具有磁阻效应元件的磁电阻效应再现头和具有下磁芯，上磁芯，夹在下磁芯和上磁心之间的线圈的感应记录头及其前端部的记录磁芯 。 下磁芯和上磁芯的前端部具有突出部分，突出部分到记录磁隙层，上磁芯具有从突出部分延伸到中间部分的连续磁体。 下磁芯的突出部分的中心线，其在与介质相对的表面上的轨道长度方向上延伸，与上磁芯的突出部分相交。

公开(公告)号：US06198597B1

公开(公告)日：2001-03-06

申请号：US09153858

申请日：1998-09-16

申请人： Kohichi Tateyama ,  Hiroaki Yoda ,  Atsuhito Sawabe ,  Naoyuki Inoue ,  Akio Hori ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Takasi Koizumi ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Kei Sakoda

发明人： Kohichi Tateyama ,  Hiroaki Yoda ,  Atsuhito Sawabe ,  Naoyuki Inoue ,  Akio Hori ,  Tadahiko Kobayashi ,  Hiromi Sakata ,  Michiko Hara ,  Takasi Koizumi ,  Tomohiko Nagata ,  Takeo Sakakubo ,  Kei Sakoda

IPC分类号： G11B531

CPC分类号： G11B5/3113 ,  G11B5/3116 ,  G11B5/3163

摘要： A thin-film magnetic head comprises a magnetic gap disposed to be positioned on an air bearing surface of the magnetic head, a pair of magnetic poles disposed to hold the magnetic gap therebetween, and a coil positioned between the pair of the magnetic poles to intersect the magnetic poles, wherein at least one of the magnetic poles being composed of a T-shaped magnetic pole, the T-shaped magnetic pole comprising a front part of a magnetic pole contacting with the magnetic gap, an intermediate part of a magnetic pole lying on the front part, and a rear part of a magnetic pole lying on the intermediate part, wherein a width of the front part roughly defines a track width, the rear part has a wider width in a direction of track width than a width of the front part, and the intermediate part contacts with the rear part at an entire width of the rear part at the air bearing surface and has a narrower width at a contacting face with the front part than the width of the rear part.

摘要翻译： 薄膜磁头包括设置在磁头的空气轴承表面上的磁隙，设置成保持磁隙的一对磁极和位于一对磁极之间的线圈，以相交 磁极，其中至少一个磁极由T形磁极组成，T形磁极包括与磁隙接触的磁极的前部，位于磁极的中间部分 在前部的前部和位于中间部的磁极的后部，前部的宽度大致限定轨道宽度，后部在轨道宽度方向上的宽度比宽度宽 前部，并且中间部分在后部的空气轴承表面的整个宽度处与后部接触，并且在与前部的接触面处具有比后部的宽度更窄的宽度。