摘要:
The present invention relates to a power supply system and method including a power generator and a storage device. Specifically, the power supply method using a power supply system which includes a power generator, a storage device, a unidirectional converter, and a bidirectional interleaved converter, and in which the other side of the unidirectional converter is connected to the other side of the bidirectional interleaved converter and power is output from the other side of the unidirectional converter, the power supply method comprises measuring one or more of an amount of power generation of the power generator and an amount of power storage of the storage device; forming a power transfer path by analyzing one or more of the amount of power generation and the amount of power storage; and controlling activation of devices on the formed power transfer path.
摘要:
Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.
摘要:
A flat panel display device includes a display panel for displaying an image in a first direction and for displaying the image in a second direction, the display panel including an emissive diode, a first surface, and a second surface substantially parallel to and opposite the first surface, a light-irradiating unit facing the first surface for irradiating light overlapping the image displayed in the second direction, and a control unit for operating the light-irradiating unit, wherein the first direction is substantially perpendicular to the second surface and the second direction forms an inclination angle, with the second surface.
摘要:
The present invention relates to a power supply system and method including a power generator and a storage device. Specifically, the power supply method using a power supply system which includes a power generator, a storage device, a unidirectional converter, and a bidirectional interleaved converter, and in which the other side of the unidirectional converter is connected to the other side of the bidirectional interleaved converter and power is output from the other side of the unidirectional converter, the power supply method comprises measuring one or more of an amount of power generation of the power generator and an amount of power storage of the storage device; forming a power transfer path by analyzing one or more of the amount of power generation and the amount of power storage; and controlling activation of devices on the formed power transfer path.
摘要:
Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.
摘要:
A method and structure for a EEPROM memory device integrated with high performance logic or NVRAM. The EEPROM device includes a floating gate and program gate self-aligned with one another. During programming, electron tunneling occurs between the floating gate and the program gate.
摘要:
In integrated circuits having copper interconnect and low-k interlayer dielectrics, a problem of open circuits after heat treatment was discovered and solved by the use of a first liner layer of Ti, followed by a conformal liner layer of CVD TiN, followed in turn by a final liner layer of Ta or TaN, thus improving adhesion between the via and the underlying copper layer while reducing the increase in resistance caused by alloying between the Ti and the Copper to an acceptable amount.
摘要:
A conductive layer in a semiconductor device is protected against chemical attack by a photoresist developer by forming a protective film overlying the conductive layer. The protective film is formed using a chemical reaction that occurs through defects in a passivation layer that was previously formed overlying the conductive layer. The chemical reaction substantially occurs at the surface of the conductive layer and chemically converts portions thereof in forming the protective film. Preferably, the conductive layer is aluminum or an alloy thereof containing copper and/or silicon, and the protective film is aluminum oxide formed on the aluminum layer to protect it from corrosion by tetramethyl ammonium hydroxide (TMAH). The passivation layer is TiN, and the chemical reaction used is oxidation of the aluminum layer through defects in the overlying TiN layer by placing in an ozone asher.
摘要:
A flexible display panel includes a non-flexible first substrate in a first display area, a flexible second substrate in a second display area, a light emitting unit on a side of the first and second substrates, and a thin film encapsulation member on the light emitting unit.
摘要:
A flexible display panel includes a non-flexible first substrate in a first display area, a flexible second substrate in a second display area, a light emitting unit on a side of the first and second substrates, and a thin film encapsulation member on the light emitting unit.