摘要:
In integrated circuits having copper interconnect and low-k interlayer dielectrics, a problem of open circuits after heat treatment was discovered and solved by the use of a first liner layer of Ti, followed by a conformal liner layer of CVD TiN, followed in turn by a final liner layer of Ta or TaN, thus improving adhesion between the via and the underlying copper layer while reducing the increase in resistance caused by alloying between the Ti and the Copper to an acceptable amount.
摘要:
In integrated circuits having copper interconnect and low-k interlayer dielectrics, a problem of open circuits after heat treatment was discovered and solved by the use of a first liner layer of Cr, followed by a conformal liner layer of CVD TiN, followed in turn by a final liner layer of Ta or TaN, thus improving adhesion between the via and the underlying copper layer while maintaining low resistance.
摘要:
Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.
摘要:
Tungsten studs of a size comparable to vias are provided to integrate and interface between copper and aluminum metallization layers in an integrated circuit and/or package therefor by lining a via opening, preferably with layers of tantalum nitride and PVD tungsten as a barrier against the corrosive effects of tungsten fluoride on copper. The reduced size of the tungsten studs relative to known interface structures allows wiring and connection pads to be formed in a single aluminum layer, improving performance and reducing process time and cost.
摘要:
A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500.degree. C. to about 700.degree. C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions.
摘要:
A method for forming a conductive contact having an atomically flat interface is disclosed. A layer containing cobalt and titanium is deposited on a silicon substrate and the resulting structure annealed in a nitrogen containing atmosphere at about 500.degree. C. to about 700.degree. C. A conductive material is deposited on top of the structure formed on anneal. A flat interface, which prevents diffusion of conductive materials into the underlying silicon substrate is formed. The method can be used to form contacts for very small devices and shallow junctions, such as are required for ULSI shallow junctions.
摘要:
The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide phase that is in its lowest resistance phase. A metal silicide is provided whose thickness is self-limiting.
摘要:
In copper backend integrated circuit technology, advanced technology using low-k organic-based interlayer dielectrics have a problem of carbon contamination that dos not occur in circuits using oxide as dielectric. A composite liner layer for the copper lines uses Ti as the bottom layer, which has the property of gettering carbon and other contaminants. The known problem with Ti of reacting with copper to form a high resistivity compound is avoided by adding a layer of TiN, which isolates the Ti and the copper.
摘要:
A process for forming a conductive contact having a flat interface. A layer containing niobium and titanium is deposited on a silicon substrate and the resulting structure is annealed in a nitrogen-containing atmosphere at about 500° C. to about 700° C. By this process, a flatter interface between silicide and silicon, which is less likely to cause junction leakage, is formed on annealing. The step of annealing also produces a more uniform bilayer, which is a better barrier against tungsten encroachment during subsequent tungsten deposition. Larger silicide grains are also formed so that fewer grain boundaries are produced, reducing metal diffusion in grain boundaries. The process can be used to form contacts for very small devices and shallow junctions, such as are required for current and future semiconductor devices.
摘要:
The present invention provides a method for enhancing uni-directional diffusion of a metal during silicidation by using a metal-containing silicon alloy in conjunction with a first anneal in which two distinct thermal cycles are performed. The first thermal cycle of the first anneal is performed at a temperature that is capable of enhancing the uni-directional diffusion of metal, e.g., Co and/or Ni, into a Si-containing layer. The first thermal cycle causes an amorphous metal-containing silicide to form. The second thermal cycle is performed at a temperature that converts the amorphous metal-containing silicide into a crystallized metal rich silicide that is substantially non-etchable as compared to the metal-containing silicon alloy layer or a pure metal-containing layer. Following the first anneal, a selective etch is performed to remove any unreacted metal-containing alloy layer from the structure. A second anneal is performed to convert the metal rich silicide phase formed by the two thermal cycles of the first anneal into a metal silicide phase that is in its lowest resistance phase. A metal silicide is provided whose thickness is self-limiting.