THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    THIN-FILM TRANSISTOR, ARRAY SUBSTRATE HAVING THE SAME AND METHOD OF MANUFACTURING THE SAME 有权
    薄膜晶体管,具有该薄膜晶体管的阵列基板及其制造方法

    公开(公告)号:US20110284852A1

    公开(公告)日:2011-11-24

    申请号:US13049783

    申请日:2011-03-16

    IPC分类号: H01L29/786 H01L21/336

    摘要: A thin-film transistor includes a semiconductor pattern, a first gate electrode, a source electrode, a drain electrode and a second gate electrode. The semiconductor pattern is formed on a substrate. A first conductive layer has a pattern that includes the first gate electrode which is electrically insulated from the semiconductor pattern. A second conductive layer has a pattern that includes a source electrode electrically connected to the semiconductor pattern, a drain electrode spaced apart from the source electrode, and a second gate electrode electrically connected to the first gate electrode. The second gate electrode is electrically insulated from the semiconductor pattern, the source electrode and the drain electrode.

    摘要翻译: 薄膜晶体管包括半导体图案,第一栅电极,源电极,漏电极和第二栅电极。 半导体图案形成在基板上。 第一导电层具有包括与半导体图案电绝缘的第一栅电极的图案。 第二导电层具有图案,其包括电连接到半导体图案的源电极,与源电极间隔开的漏电极和与第一栅电极电连接的第二栅电极。 第二栅电极与半导体图案,源电极和漏电极电绝缘。

    THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF
    3.
    发明申请
    THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF 有权
    薄膜晶体管面板及其制作方法

    公开(公告)号:US20110272696A1

    公开(公告)日:2011-11-10

    申请号:US13092882

    申请日:2011-04-22

    摘要: A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line.

    摘要翻译: 薄膜晶体管面板包括基板,基板上的阻光层,遮光层上的第一保护膜,第一保护膜上的第一电极和第二电极,第一保护膜的一部分上的氧化物半导体层 在第一电极和第二电极之间暴露的保护膜,绝缘层,与氧化物半导体层重叠的绝缘层和绝缘层上的第四电极。 遮光层包括第一侧壁,并且第一保护膜包括第二侧壁。 第一和第二侧壁沿着基本相同的线设置。

    ELECTRO DEVICE EMBEDDED PRINTED CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    ELECTRO DEVICE EMBEDDED PRINTED CIRCUIT BOARD AND MANUFACTURING METHOD THEREOF 审中-公开
    电子设备嵌入式印刷电路板及其制造方法

    公开(公告)号:US20110216515A1

    公开(公告)日:2011-09-08

    申请号:US12852063

    申请日:2010-08-06

    IPC分类号: H05K1/18 B32B38/10 B32B38/04

    摘要: An electro device embedded printed circuit board and a manufacturing method thereof are disclosed. In accordance with an embodiment of the present invention, an electro device embedded printed circuit board is manufactured by: adhering a first electro device on a supporting body through a face-down method; adhering a second electro device on an upper surface of the first electro device through a face-up method; stacking a pure resin layer and a reinforcing layer on an upper side of the supporting body, wherein the first electro device and the second electro device are embedded in the pure resin layer; removing the supporting body; stacking an insulation layer on a lower side of the first electro device, a reinforcing material having been impregnated in the insulation layer; and patterning a circuit on each of the reinforcing layer and the insulation layer.

    摘要翻译: 公开了电子装置嵌入式印刷电路板及其制造方法。 根据本发明的实施例,通过以下方式制造电子装置嵌入式印刷电路板:通过面朝下方法将第一电子装置粘附在支撑体上; 通过面朝上方法将第二电子装置粘附在第一电子装置的上表面上; 在支撑体的上侧堆叠纯树脂层和增强层,其中第一电装置和第二电装置嵌入在纯树脂层中; 去除支撑体; 在第一电子装置的下侧堆叠绝缘层,浸渍在绝缘层中的增强材料; 并且在每个加强层和绝缘层上构图电路。

    FOCAL PLANE SHUTTER AND CAMERA HAVING THE SAME
    5.
    发明申请
    FOCAL PLANE SHUTTER AND CAMERA HAVING THE SAME 有权
    具有相同功能的FOCAL PLANE SHUTTER和CAMERA

    公开(公告)号:US20110150457A1

    公开(公告)日:2011-06-23

    申请号:US12969227

    申请日:2010-12-15

    IPC分类号: G03B9/32

    CPC分类号: G03B9/32

    摘要: A focal plane shutter having a front film and a back film which expose a charge-coupled device to light as they move back and forth between a cover plate and a base plate, between a charging position and a discharging position at a certain time interval. The focal plane shutter includes at least one lever member which is connected to the front film and/or back film, and which amplifies an impact force generated during a charging and a discharging movement of the front film and/or back film using a lever action. An elevating member slides in a direction parallel with the movement of the front film and/or back film by the impact force amplified in the lever member. An impact absorbing unit regulates the sliding movement of the elevating member to absorb impact energy generated by the movement and stop of the front film and/or back film.

    摘要翻译: 具有前膜和背膜的焦平面快门,当电荷耦合器件在盖板和基板之间来回移动时,以一定的时间间隔在充电位置和放电位置之间曝光。 焦平面快门包括至少一个杠杆构件,其连接到前膜和/或后膜,并且利用杠杆动作放大在前膜和/或后膜的充电和排出运动期间产生的冲击力 。 升降构件通过在杆构件中放大的冲击力沿与前膜和/或后膜的移动平行的方向滑动。 冲击吸收单元调节升降构件的滑动运动,以吸收由前膜和/或后膜的运动和停止产生的冲击能。

    Semiconductor device and method of fabricating the same
    7.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号:US07833902B2

    公开(公告)日:2010-11-16

    申请号:US11903575

    申请日:2007-09-24

    申请人: Jin-won Lee

    发明人: Jin-won Lee

    IPC分类号: H01L23/52 H01L21/4763

    摘要: In a semiconductor device and a method of fabricating the same, the semiconductor device includes a contact pad in a first interlayer insulating layer on a semiconductor substrate, a contact hole in a second interlayer insulating layer on the first interlayer insulating layer, selectively exposing the contact pad, a contact spacer on internal walls of the contact hole, a first contact plug connected to the contact pad exposed by the contact hole having the contact spacer on the internal walls thereof, the first contact plug partially filling the contact hole, a metal silicide layer on a surface of the first contact plug, and a second contact plug on the metal silicide layer and partially filling the remaining portion of the contact hole.

    摘要翻译: 在半导体器件及其制造方法中,半导体器件包括在半导体衬底上的第一层间绝缘层中的接触焊盘,在第一层间绝缘层上的第二层间绝缘层中的接触孔,选择性地暴露接触 焊盘,接触孔的内壁上的接触间隔件,连接到接触垫的第一接触插塞,该接触焊盘由其内壁上具有接触间隔件的接触孔暴露,第一接触插塞部分地填充接触孔,金属硅化物 第一接触插塞的表面上的第二接触插塞和金属硅化物层上的第二接触插塞,并部分地填充接触孔的剩余部分。

    Side view type light emitting diode package
    10.
    发明申请
    Side view type light emitting diode package 审中-公开
    侧视型发光二极管封装

    公开(公告)号:US20090189175A1

    公开(公告)日:2009-07-30

    申请号:US12078117

    申请日:2008-03-27

    IPC分类号: H01L33/00

    摘要: Disclosed is a side view light emitting diode (LED) package whose light emitting surface has been relatively expanded. The LED package includes a housing and a lead frame extended externally through the housing and bent in a direction of the recessed space. The housing includes a reflecting housing having a cavity and a supporting housing.

    摘要翻译: 公开了一种其发光表面相对膨胀的侧视发光二极管(LED)封装。 LED封装包括壳体和引线框架,引线框架从外部延伸穿过壳体并在凹陷空间的方向上弯曲。 壳体包括具有空腔和支撑壳体的反射壳体。