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    BEOL Interconnect With Carbon Nanotubes
    3.
    发明申请
    BEOL Interconnect With Carbon Nanotubes 有权
    BEOL与碳纳米管互连

    公开(公告)号：US20130228933A1

    公开(公告)日：2013-09-05

    申请号：US13601963

    申请日：2012-08-31

    申请人： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

    发明人： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

    IPC分类号： H01L21/768 ,  H01L23/538

    CPC分类号： H01L21/76877 ,  A61K8/46 ,  A61K8/8182 ,  A61K2800/884 ,  A61Q9/04 ,  B82Y40/00 ,  H01L21/76843 ,  H01L23/5384 ,  H01L29/413 ,  H01L2924/0002 ,  Y10S977/742 ,  H01L2924/00

    摘要： An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

    摘要翻译： 具有BEOL互连的集成电路可以包括：包括半导体器件的衬底; 在所述衬底的表面上的第一层电介质，所述第一层电介质包括用于与所述半导体器件电接触的填充通孔; 以及在所述第一介电层上的第二电介质层，所述第二介电层包括垂直于所述填充通孔的纵向轴线延伸的沟槽，所述沟槽填充有互连线，所述互连线包含交联的碳纳米管 并且物理地和电连接到填充的通孔。 使用包括前体气体分压大于碳纳米管生长从平行碳纳米管生长模式转变为交联碳的过渡分压的生长条件，将交联的CNT生长在沟槽底部的催化剂颗粒上 纳米管生长模式。

    METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE
    6.
    发明申请
    METHODS FOR FORMING A PHOTOVOLTAIC DEVICE WITH LOW CONTACT RESISTANCE 审中-公开
    用于形成具有低接触电阻的光伏器件的方法

    公开(公告)号：US20080245414A1

    公开(公告)日：2008-10-09

    申请号：US11733184

    申请日：2007-04-09

    申请人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

    发明人： Shuran Sheng ,  Yong Kee Chae ,  Tae Kyung Won ,  Liwei Li ,  Soo Young Choi ,  Yanping Li ,  Joe Griffith Cruz

    IPC分类号： H01L31/00

    CPC分类号： H01L31/022425 ,  H01L31/0745 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1824 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： An improved PV solar cell structure and methods for manufacturing the same are provided. In one embodiment, a photovoltaic device includes a first photoelectric conversion unit, a first transparent conductive oxide layer and a first microcrystalline silicon layer disposed between and in contact with the photoelectric conversion unit and the transparent conductive oxide layer. In another embodiment, a method of forming a photovoltaic solar cell includes providing a substrate having a first transparent conductive oxide layer disposed thereon, depositing a first microcrystalline silicon layer on the transparent conductive oxide layer, and forming a first photoelectric conversion unit on the microcrystalline silicon layer.

    摘要翻译： 提供了一种改进的PV太阳能电池结构及其制造方法。 在一个实施例中，光伏器件包括第一光电转换单元，第一透明导电氧化物层和设置在光电转换单元和透明导电氧化物层之间并与之接触的第一微晶硅层。 在另一实施例中，形成光伏太阳能电池的方法包括提供一个其上设置有第一透明导电氧化物层的衬底，在透明导电氧化物层上沉积第一微晶硅层，以及在微晶硅上形成第一光电转换单元 层。