摘要:
Provided are a memory device and a memory module, which perform both an ECC operation and a redundancy repair operation. The memory device repairs a single-bit error due to a ‘fail’ cell by using an error correction code (ECC) operation, and also repairs the ‘fail’ cell by using a redundancy repair operation when the ‘fail’ cell is not repairable by the ECC operation. The redundancy repair operation includes a data line repair and a block repair. The ECC operation may change a codeword corresponding to data per one unit of memory cells including the ‘fail’ cell, and may also change the size of parity bits regarding the changed codeword.
摘要:
For selecting anti-fuses in a semiconductor memory device, a decoder block may be enabled to receive selection information for selecting the anti-fuses. The selection information is decoded in the decoder block to select at least one of the anti-fuses. Target operation is performed on the selected anti-fuses. The decoder block is disabled.
摘要:
A method of operating a volatile memory device includes storing address information of weak cell rows. According to some examples, after writing to a weak cell row, a refresh operation is performed on the weak cell row within a predetermined time. According to some examples, the writing operation to a weak cell row may be performed with a longer write recovery time than a write recovery time to normal cell rows.
摘要:
A semiconductor memory device includes a first bit line to which a first memory cell is connected, and a second bit line to which a second memory cell is connected, the second bit line being complementary to the first bit line, a sense amplifier that includes a first transistor and a second transistor connected in series between the first bit line and the second bit line, the sense amplifier including a first node between the first transistor and the second transistor, a gate of the first transistor being connected to the second bit line, and a gate of the second transistor being connected to the first bit line, and a voltage providing unit that provides a first voltage to the first node during presensing, and provides a second voltage, different from the first voltage, to the first node during main sensing.
摘要:
A semiconductor memory device including an antifuse cell array and a spare antifuse cell array are provided. An antifuse cell array includes a first set of antifuse cells arranged in a first direction and each one of the first set of antifuse cells is connected to a corresponding one of first through nth word lines. The spare antifuse cell array includes a first spare set of antifuse cells arranged in the first direction and each one of the first spare set of antifuse cells is connected to a corresponding one of first through kth spare word lines. A first operation control circuit is configured to program antifuses of the antifuse cell array and the spare antifuse cell array, and to read a status of each of the antifuses. The first operation control circuit is commonly connected to the first set of antifuse cells and the first spare set of antifuse cells.
摘要:
A semiconductor memory device comprises a cell region including a plurality of unit memory cells, and a peripheral circuit region, the peripheral circuit region including a plurality of peripheral circuit devices for operating the plurality of memory cells and at least one operating capacitor formed adjacent to at least one peripheral circuit device at a pseudo circuit pattern region.
摘要:
The invention discloses a semiconductor memory device in which faulty cells causing standby current failure will be replaced with redundancy cells. The semiconductor memory device includes: a plurality of word lines, a plurality of bit lines, a plurality of cells connected between the word lines and bit lines for storing data and a memory cell array of a plurality of cell blocks having a plurality of cell power lines for providing supply voltage to the cells; a plurality of row decoder circuits for decoding external row addresses and generating selection signals for predetermined word lines included in the cell blocks; and a plurality of cell power repairing circuits for selectively blocking between cell power lines providing supply voltage to faulty cells and power source at an occurrence of faulty cells causing standby current failure. At this time, the cell power lines of the cell blocks are arranged in an identical direction to word lines; the row decoder circuits are respectively arranged between two neighboring cell blocks; and the cell power repairing circuits are respectively arranged between the cell blocks of the memory cell array, thereby reducing the size of a chip.
摘要:
A memory module includes a plurality of memory devices and a buffer chip. The buffer chip manages the memory devices. The buffer chip includes a refresh control circuit that groups a plurality of memory cell rows of the memory devices into a plurality of groups according to a data retention time of tire memory cell rows. The buffer chip selectively refreshes each of the plurality of groups in each of a plurality of refresh time regions that are periodically repeated and applies respective refresh periods to the plurality of groups, respectively.
摘要:
A memory system includes a memory device and a memory controller. The memory device includes a plurality of memory cells. The memory controller is configured to continuously perform a plurality of write commands on the memory device between an active command and a precharge command. In the memory system, when after a first write operation having a last write command of the plurality of write commands is performed and then the precharge command is issued, the last write command is issued for a second write operation after the precharge command. The first write operation and the second write operation write a same data to memory cells of plurality of memory cells having a same address.
摘要:
A fuse circuit includes a program unit, a sensing unit and a control unit. The program unit is programmed in response to a program signal, and outputs a program output signal in response to a sensing enable signal. The sensing unit includes a variable resistor unit that has a resistance that varies based on a control signal, and generates a sensing output signal based on the resistance of the variable resistor unit and the program output signal. The control unit generates the control signal having a value changed depending on operation modes, and performs a verification operation with respect to the program unit based on the sensing output signal to generate a verification result. The program unit may be re-programmed based on the verification result.